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At least 127 records · Page 7

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NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis

The standard solar cells (2x2 cm) from the cast silicon (HEM) showed a maximum AMO efficiency of 10.1%. Cells from the low resistivity material (0.5 ohm-cm) showed lower performance than those of the high resistivity cast silicon (3 ohm-cm), an average efficiency 9.5% versus 7.6%. Maximum AMO efficiency of the standard solar cells from the EFG (RH) ribbons was about 7.5%. The solar cells from the controlled SiC, using the displaced die, showed more consistent and better performance than those of the uncontrolled SiC ribbons, an average efficiency of 6.6% versus 5.4%. The average AMO efficiency of the standard SOC solar cells were about 6%. These were large area solar cells (an average area of 15 sq cm). A maximum efficiency of 7.3% was obtained. The SOC solar cells showed both leakage and series resistance problems, leading to an average curve fill factor of about 60%.

Yoo, H. I.↗

NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis

The standard solar cells (2x2 cm) from the cast silicon heatexchanger method) showed a maximum AMO efficiency of 10.1%. Cells from low resistivity material (0.5 ohm-cm) showed lower performance than those of the high resistivity cast silicon (3 ohm-cm), an average efficiency 9.5% versus 7.6% Maximum AMO efficiency of the standard solar cells (2x2 cm) from the EFG (RH) ribbons was about 7.5%. The solar cells from controlled SiC, using the displaced die, showed more consistent and better performance than those of the uncontrolled SiC ribbons, an average efficiency of 6.6% versus 5.4% The average AMO efficiency of the standard silicon ceramic (soc) solar calls were about 6%. These were large area solar cells (an average area of 15 sq cm). A maximum efficiency of 7.3% was obtained. The SOC solar cells showed both leakage and series resistance problems, leading to an average curve fill factor of about 60%.

Yoo, H. I.↗

NASA NTRS1980

Analysis of the effects of impurities in silicon

A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. It was found that certain impurities such as titanium, tantalum, and vanadium were bad, even in very small concentrations. Cell performance appeared relatively tolerable to impurities such as copper, carbon, calcium, chromium, iron and nickel (in the concentration levels which were considered).

Wohlgemuth, J.↗

NASA NTRS1980

Silicon web process development

A barrier crucible design which consistently maintains melt stability over long periods of time was successfully tested and used in long growth runs. The pellet feeder for melt replenishment was operated continuously for growth runs of up to 17 hours. The liquid level sensor comprising a laser/sensor system was operated, performed well, and meets the requirements for maintaining liquid level height during growth and melt replenishment. An automated feedback loop connecting the feed mechanism and the liquid level sensing system was designed and constructed and operated successfully for 3.5 hours demonstrating the feasibility of semi-automated dendritic web growth. The sensitivity of the cost of sheet, to variations in capital equipment cost and recycling dendrites was calculated and it was shown that these factors have relatively little impact on sheet cost. Dendrites from web which had gone all the way through the solar cell fabrication process, when melted and grown into web, produce crystals which show no degradation in cell efficiency. Material quality remains high and cells made from web grown at the start, during, and the end of a run from a replenished melt show comparable efficiencies.

Duncan, C. S.↗

NASA NTRS1980

Mutiple Czochralski growth of silicon crystals from a single crucible

An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.

Lane, R. L.↗

NASA NTRS1981

High resolution, low cost solar cell contact development

The MIDFILM cell fabrication and encapsulation processes were demonstrated as a means of applying low-cost solar cell collector metallization. The average cell efficiency of 12.0 percent (AM1, 28 C) was achieved with fritted silver metallization with a demonstration run of 500 starting wafers. A 98 percent mechanical yield and 80 percent electrical yield were achieved through the MIDFILM process. High series resistance was responsible for over 90 percent of the electrical failures and was the major factor causing the low average cell efficiency. Environmental evaluations suggest that the MIDFILM cells do not degrade. A slight degradation in power was experienced in the MIDFILM minimodules when the AMP Solarlok connector delaminated during the environmental testing.

Mardesich, N.↗

NASA NTRS1971

Design and development of solid state detector for SCADS

Solid state detector technology was applied to the fabrication and testing of cadmium sulfide and silicon narrow slit detector/preamplifier subassemblies. Fabrication of the silicon detector and the cadmium sulfide detectors was accomplished by utilizing cadmium sulfide cells and silicon cells. Fabrication of the preamplifiers for both silicon and cadmium sulfide slit type detectors was also carried out. The design of these preamplifiers was adjusted to ascertain that the limiting noise source of the detector/preamplifier subassembly is the detector and the input cable.

Source record↗

NASA NTRS1977

Advanced high efficiency wraparound contact solar cell

A significant advancement in the development of thin high efficiency wraparound contact silicon solar cells has been made by coupling space and terrestrial processing procedures. Although this new method for fabricating cells has not been completely reduced to practice, some of the initial cells have delivered over 20 mW/sq cm when tested at 25 C under AMO intensity. This approach not only yields high efficiency devices, but shows promise of allowing complete freedom of choice in both the location and size of the wraparound contact pad area

Scott-Monck, J. A.↗

NASA NTRS1977

Advanced high efficiency wraparound contact solar cell

Scott-Monck, J. A.↗

NASA NTRS1980

Contact integrity testing of stress-tested silicon terrestrial solar cells

A test procedure was developed and applied to terrestrial silicon solar cells in order to determine the effect of accelerated environmental and time-temperature aging on metal contact integrity. Quantities of cells of four different manufacturers were given the contact integrity test after being subjected to accelerated stress tests that included forward bias-temperature, thermal cycle and thermal shock, power cycle, and bias-temperature humidity tests at two temperature-humidity levels. Significant effects due to certain stress tests were found for some cell types. It is concluded that cells fabricated using plated nickel/solder metallization showed significantly more serious contact integrity degradation than silver-metallized cells.

Prince, J. L.↗

NASA NTRS1996

Review of recent thermophotovoltaic (TPV) research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV cells and rare earth yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to .7) within the emission bands. The .75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 13% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗

NASA NTRS1995

Review of Recent Thermophotovoltaic (TPV) Research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV calls and rare earth - yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to 0.7) within the emission bands. The 0.75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 130% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗

NASA NTRS1980

Radiation damage in lithium-counterdoped n/p silicon solar cells

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

Hermann, A. M.↗

NASA NTRS1980

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

Salama, A. M.↗

NASA NTRS1985

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

Culik, J. S.↗

NASA NTRS1966

Advancement of the state-of-the-art in the production of drift field solar cells Final project report, 23 Jun. 1965 - 23 Jan. 1966

Drift-field solar cell fabrication with space environment radiation resistance capabilities

RADIATION RESISTANCE↗

NASA NTRS1986

Safety considerations of lithium-thionyl chloride cells

The use of spirally wound lithium-thionyl chloride (Li-SOCl2) cells is currently limited because of their hazardous behavior. Safety hazards have ranged from mild venting of toxic materials to violent explosions and fires. These incidents may be related to both user- and manufacturer-induced causes. Many explanations have been offered to explain the unsafe behavior of the cells under operating and abuse conditions. Explanations fall into two categories: (1) thermal mechanisms, and (2) chemical mechanisms. However, it is quite difficult to separate the two. Both may be responsible for cell venting or explosion. Some safety problems encountered with these cells also may be due to design deficiencies and ineffective quality control during cell fabrication. A well-coordinated basic and applied research program is needed to develop safe Li-SOCl2 cells. Recommendations include: (1) learnig more about Li-SOL2 cell chemistry; (2) modeling cell and battery behavior; (3) optimizing cell design for safety and performance, (4) implementing quality control procedures; and (5) educating users.

Subbarao, Surampudi↗

NASA NTRS1991

GaAs solar cells for laser power beaming

Efforts to develop GaAs solar cells for coupling to laser beams in the wavelength range of 800 to 840 nm are described. This work was motivated primarily by interests in space-tp-space power beaming applications. In particular, the Battelle Pacific Northwest Laboratories is conducting studies of the utilization of power beaming for several future space missions. Modeling calculations of GaAs cell performance were carried out using PC-1D to determine an appropriate design for a p/n cell structure. Epitaxial wafers were grown by MOCVD and cells fabricated at WSU Tri-Cities. Under simulated conditions, an efficiency of 53 percent was achieved for a cell coupled to 806 nm light at 400 mW/sq cm.

Olsen, Larry C.↗