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Results for “HALL EFFECT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,225 records · Page 68
All sourcesNASA NTRSDOE OSTI
NASA NTRS1967

Hall Mobility in SrTio (sub 3)

Conductivity and Hall coefficient measurements for electron mobilities in strontium titanate, discussing electron-phonon coupling and cryogenic experiments

ELECTRON MOBILITY↗
NASA NTRS1971

Electrical properties of tellurium thin films

Evaporated tellurium thin films electric properties, discussing fabrication techniques, temperature dependence, field effect and Hall mobilities, threshold voltage and stability

Dutton, R. W.↗
NASA NTRS1993

Ru(sub 2)Ge(sub 3): Crystal Growth and Come Properties

Large samples of Ru(sub 2)Ge(sub 3) were grown from Ge-rich off-stoichiometric melts at a temperature close to 1460 C by a vertical gradient freeze method in graphite and glassy carbon crucibles.

off-stoichiometric melt twinning crack formation h↗
NASA NTRSDate not supplied

A Facility Effect Characterization Test of the BHT-6000 Hall Thruster

During the development of the BHT-6000 Hall thruster for flight on NASA’s Power and Propulsion Element, a facility effect test campaign was performed on an engineering unit of the thruster. Testing occurred in Vacuum Facility 5 at NASA Glenn Research Center. The goal of the test campaign was to characterize the behavior of the BHT-6000 Hall thruster as functions of facility effects such that the thruster’s in-flight behavior can be reasonably bounded. In particular, the behavior of the thruster with regard to the background pressure and electrical environment was tested. The background pressure was controlled by injecting supplemental propellant flow into the environment, while the electrical environment was controlled by biasing the facility beam dump. Thrust was found to remain constant over the tested range of pressures while specific impulse was found to increase slightly (1 to 1.5% over a range of up to 20 μTorr, depending on operating point). Plasma plume properties, particularly of ions exiting the side of the thruster, were found to be highly sensitive to pressure and may require pressures of less than a few μTorr for accurate measurements. The thruster was found to operate identically with changing beam dump bias voltage to within measurement uncertainties.

Electric propulsion↗
DOE OSTI2022

Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides

Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T' phase of transition metal dichalcogenides (MX 2 , M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Furthermore, our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX2 undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX 2 undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall effect and into trivial phases with increasing light intensity. From a general perspective, this theoretical work brings further insight into non-equilibrium topological systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of surface disorder on the chiral surface states of a three-dimensional quantum Hall system

We investigate the effect of surface disorder on the chiral surface states of a three-dimensional quantum Hall system. Utilizing a transfer-matrix method, we find that the localization length of the surface state along the magnetic field decreases with the surface disorder strength in the weak disorder regime but increases anomalously in the strong disorder regime. In the strong disorder regime, the surface states mainly locate at the first inward layer to avoid the strong disorder in the outmost layer. The anomalous increase of the localization length can be explained by an effective model, which maps the strong disorder on the surface layer to the weak disorder on the first inward layer. Our work demonstrates that surface disorder can be an effective way to control the transport behavior of the surface states along the magnetic field. We also investigate the effect of surface disorder on the full distribution of conductances P(g) of the surface states in the quasi-one-dimensional (1D) regime for various surface disorder strengths. In particular, we find that P(g) is Gaussian in the quasi-1D metal regime and log-normal in the quasi-1D insulator regime. In the crossover regime, P(g) exhibits highly nontrivial forms, whose shapes coincide with the results obtained from the Dorokhov-Mello-Pereyra-Kumar equation of a weakly disordered quasi-1D wire in the absence of time-reversal symmetry. Our results suggest that P(g) is fully determined by the average conductance, independent of the details of the system, in agreement with the single-parameter scaling hypothesis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Quantitative study of the effect of grain boundary parameters on the slip system level Hall-Petch slope for basal slip system in Mg-4Al

Several theoretical studies have reported that the geometry and structure of grain boundaries in polycrystalline materials could impose a significant effect on the Hall-Petch slope. However, experimental observations are primarily limited by the ability of the techniques to accurately quantify the grain boundary strength and validate these theoretical models. Using high-resolution electron backscatter diffraction (HR-EBSD), the local stress tensor ahead of a slip band blocked by a grain boundary was quantified and coupled with a continuum dislocation pile-up model to assess the barrier strength of specific grain boundaries to specific slip systems, referred to as micro-Hall-Petch coefficient. For basal slip system in a deformed Mg-4Al alloy, the micro-Hall-Petch coefficient ($k^{basal}_{μ}$) varied significantly, from 0.054 to 0.184 MPa - m 1/2 for nine different grain boundaries. These results were correlated with geometric descriptors of the respective grain boundaries, with three-dimensional GB profile additionally measured via focused ion beam milling. It was found that the angle between the two slip plane traces on the grain boundary plane was the most sensitive parameter affecting $k^{basal}_{μ}$, followed by the angle between the slip directions. A functional form for calculation of $k^{basal}_{μ}$ depending on these two angles is proposed to augment crystal plasticity constitutive models with slip resistance dependent on some measure of the grain size. The method allows a new pathway to calibrate grain size strengthening parameters in crystal plasticity models, allowing further computational investigations of the interrelationship between texture, grain morphology, and the Hall Petch effect.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Testing the Effectiveness of Integrated Plume Shield for a Hall Thruster

Hall thrusters have been shown to exhibit side plumes with varying degree of erosive power. This article presents the concept of the integrated plume shield for the purpose of mitigating the erosive power of said side plume. A test was conducted on a low-power Hall thruster with and without integrated plume shield and the effect on thruster performance and plume characteristics were measured. Collected data shows that the thruster performed identically to within uncertainty in terms of thrust, specific impulse, and discharge oscillation characteristics. Plume measurements showed up to a 48% reduction in ion current density when averaging over 80° to 105° from the firing axis. A brief analytical study was performed to determine the advantages and disadvantages of using integrated plume shield as opposed to using spacecraft surface covering and placing thrusters on booms. The integrated plume shield was found to provide varying level of advantages in mass, design restrictions, and complexity, which are likely to lead to major cost savings in the long term.

Electric Propulsion↗
NASA NTRS2013

The Effectiveness of Magnetic Shielding in High-Isp Hall Thrusters

A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300-700 V (Isp 2000-2700 s) at 6 kW, and 800 V (Isp 3000) at 9 kW. In this paper we report on the simulation results and their validation with experimental measurements. At 6 kW the magnetic field topology with which we recently demonstrated highly effective magnetic shielding at 300 V was retained for all other discharge voltages; only the magnitude of the field was changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. Maximum erosion rates that remain fairly constant across the range of 300-700 V are computed, with values not exceeding 10-2 mm/kh. Such rates are ~3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300 V. At 9 kW and 800 V, saturation of the magnetic circuit did not permit us to attain precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be ~1 order of magnitude higher (~10-1 mm/kh) than that at the 6-kW level. At the outer wall the ion energy is below the sputtering yield threshold so no measurable erosion is expected. The reasons behind the effectiveness of magnetic shielding at higher discharge voltages are discussed.

magnetic-field-aligned-mesh (MFAM) code↗
DOE OSTI2025

Tunable high Néel temperature and large anomalous Hall response in antiferromagnetic Weyl semimetal Mn 3 Sn 1− x Ga x thin films

Antiferromagnetic Weyl semimetals based on Mn 3 X(X = Ge, Sn, Ga) kagome compounds exhibit the same ferromagnetic-like responses, including anomalous Hall, Nernst, and magneto-optical effects, as recently discussed for altermagnets. Driven by the Berry curvature due to Weyl fermions, these materials show a disproportionately large magnitude of electromagnetic effects even in the absence of large magnetization. For applications it is crucial to realize these responses in a wide range of temperatures both below and above 300 K. While stoichiometric Mn 3 X materials do not offer optimal performance, we show that Mn 3 Sn 1−x Ga x sputtered films with a variable composition offers a tunable Néel temperature, T N ≈ 425 ± 6–500 ± 15 K, which is crucial for device applications, together with a large tunable anomalous Hall effect. Our thin film growth method enables continuous and precise control over the film composition between x = 0 and x = 1. Through a detailed magnetization and Hall transport, we establish the magnetic phase diagram for the hexagonal Mn 3 Sn 1−x Ga x . Our results reveal an enhanced T N and antichiral magnetic phase in Ga-doped Mn 3 Sn and an enhanced anomalous Hall magnitude in Sn-doped Mn 3 Ga compared to their stoichiometric undoped forms. Our work demonstrates a route to optimize the technologically relevant antiferromagnets for various applications.

Magnetic properties and materials↗
DOE OSTI2023

Confinement-Induced Chiral Edge Channel Interaction in Quantum Anomalous Hall Insulators

In quantum anomalous Hall (QAH) insulators, the interior is insulating but electrons can travel with zero resistance along one-dimensional (1D) conducting paths known as chiral edge channels (CECs). These CECs have been predicted to be confined to the 1D edges and exponentially decay in the two-dimensional (2D) bulk. Here, in this Letter, we present the results of a systematic study of QAH devices fashioned in a Hall bar geometry of different widths under gate voltages. At the charge neutral point, the QAH effect persists in a Hall bar device with a width of only ~7⁢2 nm, implying the intrinsic decaying length of CECs is less than ~3⁢6 nm. In the electron-doped regime, we find that the Hall resistance deviates quickly from the quantized value when the sample width is less than 1 μ⁢m. Our theoretical calculations suggest that the wave function of CEC first decays exponentially and then shows a long tail due to disorder-induced bulk states. Therefore, the deviation from the quantized Hall resistance in narrow QAH samples originates from the interaction between two opposite CECs mediated by disorder-induced bulk states in QAH insulators, consistent with our experimental observations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗