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DOE OSTI · 2969111

Tunable high Néel temperature and large anomalous Hall response in antiferromagnetic Weyl semimetal Mn 3 Sn 1− x Ga x thin films

Raju, M. [Johns Hopkins University, Baltimore, MD (United States)] (ORCID:000000015847176X)·Matsuo, Takumi [Johns Hopkins University, Baltimore, MD (United States); University of Tokyo (Japan)]·Balkew, Mikias B. [Johns Hopkins University, Baltimore, MD (United States)]·Nishio-Hamane, Daisuke [University of Tokyo, Chiba (Japan)] (ORCID:0009000795302130)·Higo, Tomoya [University of Tokyo (Japan); University of Tokyo, Chiba (Japan)] (ORCID:0000000333086536)·Broholm, Collin [Johns Hopkins University, Baltimore, MD (United States)] (ORCID:0000000215699892)·Nakatsuji, Satoru [Johns Hopkins University, Baltimore, MD (United States); University of Tokyo (Japan); University of Tokyo, Chiba (Japan); Canadian Institute for Advanced Research (CIFAR), Toronto, ON (Canada)] (ORCID:000000019134659X)
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Abstract

Antiferromagnetic Weyl semimetals based on Mn 3 X(X = Ge, Sn, Ga) kagome compounds exhibit the same ferromagnetic-like responses, including anomalous Hall, Nernst, and magneto-optical effects, as recently discussed for altermagnets. Driven by the Berry curvature due to Weyl fermions, these materials show a disproportionately large magnitude of electromagnetic effects even in the absence of large magnetization. For applications it is crucial to realize these responses in a wide range of temperatures both below and above 300 K. While stoichiometric Mn 3 X materials do not offer optimal performance, we show that Mn 3 Sn 1−x Ga x sputtered films with a variable composition offers a tunable Néel temperature, T N ≈ 425 ± 6–500 ± 15 K, which is crucial for device applications, together with a large tunable anomalous Hall effect. Our thin film growth method enables continuous and precise control over the film composition between x = 0 and x = 1. Through a detailed magnetization and Hall transport, we establish the magnetic phase diagram for the hexagonal Mn 3 Sn 1−x Ga x . Our results reveal an enhanced T N and antichiral magnetic phase in Ga-doped Mn 3 Sn and an enhanced anomalous Hall magnitude in Sn-doped Mn 3 Ga compared to their stoichiometric undoped forms. Our work demonstrates a route to optimize the technologically relevant antiferromagnets for various applications.

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Raju, M. [Johns Hopkins University, Baltimore, MD (United States)] (ORCID:000000015847176X), Matsuo, Takumi [Johns Hopkins University, Baltimore, MD (United States); University of Tokyo (Japan)], Balkew, Mikias B. [Johns Hopkins University, Baltimore, MD (United States)], Nishio-Hamane, Daisuke [University of Tokyo, Chiba (Japan)] (ORCID:0009000795302130), Higo, Tomoya [University of Tokyo (Japan); University of Tokyo, Chiba (Japan)] (ORCID:0000000333086536), Broholm, Collin [Johns Hopkins University, Baltimore, MD (United States)] (ORCID:0000000215699892), Nakatsuji, Satoru [Johns Hopkins University, Baltimore, MD (United States); University of Tokyo (Japan); University of Tokyo, Chiba (Japan); Canadian Institute for Advanced Research (CIFAR), Toronto, ON (Canada)] (ORCID:000000019134659X). 2025-09-24. Tunable high Néel temperature and large anomalous Hall response in antiferromagnetic Weyl semimetal Mn 3 Sn 1− x Ga x thin films. https://doi.org/10.1038/s43246-025-00912-1

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