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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Diffusants were applied onto semiconductor solar cell substrates, using screen printing techniques. The method was applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.
Directionally solidified Mo alloys are evaluated to determine the shear rupture strength and to possibly improve it by microstructural and heat treatment variations. Bars of the alloy containing nominally 5.7% Al and 33.5% Mo by weight with balance Ni were directionally solidified at rates between 10 and 100 mm per hour in furnaces with thermal gradients at the liquid-solid interface of 250 or 100 C per cm. A limited number of longitudinal shear rupture tests were conducted at 760 C and 207 MPa in the as - solidified and in several heat treated conditions. It is shown that shear rupture failures are partly transgranular and that resistance to failure is prompted by good fiber alignment and a matrix structure consisting mainly of gamma prime. Well aligned as - solidified specimens sustained the shear stress for an average of 81 hours. A simulated coating heat treatment appeared to increase the transformation of gamma to gamma prime and raised the average shear life of aligned specimens to 111 hours. However, heat treatments at 1245 C and especially at 1190 C appeared to be detrimental by causing partial solutioning of the gamma prime, and reducing lives to 47 and 10 hours, respectively.
Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.
A collation of documents and drawings are presented that describe a prototype solar heating and hot water system using liquid flat plate collectors and a gas or electric furnace energy subsystem. The system was designed for installation into a single-family dwelling. The description, performance specification, subsystem drawings, verification plan/procedure, and hazard analysis of the system are packaged for evaluation of the system with information sufficient to assemble a similar system.
Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that substantial cost reductions can be realized from technical advancements which fall into four categories: an increase in furnace productivity; the reduction of crucible cost through use of the crucible for the equivalent of multiple state-of-the-art crystals; the combined effect of several smaller technical improvements; and a carry over effect of the expected availability of semiconductor grade polysilicon at greatly reduced prices. A format for techno-economic analysis of solar cell production processes was developed, called the University of Pennsylvania Process Characterization (UPPC) format. The accumulated Cz process data are presented.
A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.
Progress made in the development of EFG ribbon growth is discussed. Specific areas covered include: (1) demonstration of multiple growth for ribbons 5 cm wide in runs of 12 and 20 hours duration; (2) a single cartridge crystal growth station was built expanding observational capacity by virtue of an anamorphic optical-video system which allows close observation of the meniscus over 7.5 cm wide, as well as video taping of the ribbon growth process; (3) growth station no.1 achieved reproducible and reliable growth of 7.5 cm wide ribbon at speeds up to 4 cm/min; (4) introduction of the 'mini cold shoe'; (5) increases in cell efficiency due to interface shaping using the 'displaced die' concept; and (6) clarification of the role of gaseous impurities in cartridge furnaces and stabilization of their destabilizing influence on growth.
A thermal analysis of a cylindrical HgCdTe sample in a Bridgman-Stockbarger crystal growth configuration was conducted with emphasis on the thermal profile, interface shape and position, and the thermal gradients at the liquid-solid interface. Alloys of HgTe and CdTe with compositions approximating 20 percent CdTe, 80 percent HgTe were used. This composition results in a bandgap suited for the detection of 10.6 micron CO2 radiation. The sensitivity of the sample thermal characteristics to important growth parameters, such as thermal diffusivities, thermal conductivities, furnace temperature profile, ampoule dimensions, and growth velocity was assessed. Numerical techniques and associated computational models necessary to analyze the heat transfer process within the sample and the Bridgman-Stockbarger boundary conditions were developed. This thermal analysis mode was programmed in FORTRAN V, and is currently operational on the MSFC Univac 1100 system.
Displaced die concepts were explored along with some initial work on buckle characterization. Convective impurity redistribution was further studied. Growth from single cartridges was continued to create a quality baseline to allow comparison of the results with those in the upcoming multiple run and to choose the most appropriate die design. Fabrication and assembly work on the actual five ribbon furnace continued. Progress was made toward the development of the video optical system for edge position and meniscus height control. In preparation for a detailed program, designed to explore the buckling problem, ribbon guidance in the machine was improved. Buckle free, full width ribbon was grown under stable conditions without a cold shoe, an achievement essential to finally arrive at quantitative correlations between growth conditions and buckle formation.
The development status of the process based upon ion implantation for the introduction of junctions and back surface fields is described. A process sequence is presented employing ion implantation and pulse processing. Efforts to improve throughout and descrease process element costs for furnace annealing are described. Design studies for a modular 3,000 wafer per hour pulse processor are discussed.
A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.
During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.
A combustion technology that permits the burning of low quality coal, and other fuels, while maintaining stack emissions within State and Federal EPA limits is discussed. Low quality fuels can be burned directly in fluidized beds while taking advantage of low furnace temperatures and chemical activity within the bed to limit SO2 and NOx emissions. The excellent heat transfer characteristics of the fluidized beds also result in a reduction of total heat transfer surface requirements. Tests on beds operating at pressures of one to ten atmospheres, at temperatures as high as 1600 F, and with gas velocities in the vicinity of four to twelve feet per second, have proven the concept. The progress that has been made in the development of fluidized bed combustion technology and work currently underway are discussed.
The Apollo Soyuz Test Program is described. A modification of the Skylab furnace was developed for the ASTP mission that had a maximum temperature of 1200 C, a programmed cool down to give more uniform growth rates, and a He quench system to shorten the time required to reach allowable touch temperature. The Space Processing Applications Rocket (SPAR) program was initiated to provide some continuity in flight experimentation. Liquid mixing, immiscible alloy solidification, composite materials, bubbles and dispersed particles during solidification, and containerless processing techniques were studied in the SPAR program.
A cyclic furnace study was conducted between 990 - 280 C and 1095 - 280 C to evaluate the effects of yttrium, chromium, and aluminum concentrations in nickel base alloy bond coatings and also the effect of the bond coating thickness on the performance of yttria-stabilized zirconia thermal barrier coatings. The presence and the concentration of yttrium is very critical. Without yttrium, rapid oxidation of Ni-Al, Ni-Cr, and Ni-Cr-Al bond coatings causes zirconia thermal barrier coatings to fail very rapidly. Concentrations of chrominum and aluminum in Ni-Cr-Al-Y bond coating have a very significant effect on the thermal barrier coating life. This effect, however, is not as great as that due to yttrium. Furthermore, the thickness and the thickness uniformity also have a very significant effect on the life of the thermal barrier system.
Low-melting phosphate and borate glasses were screen printed on silicon wafers and heated to form n and p junctions. Data on surface appearance, sheet resistance and junction depth are presented. Similar data are reported for vapor phase transport from sintered aluminum metaphosphate and boron-containing glass-ceramic solid sources. Simultaneous diffusion of an N(+) layer with screen-printed glass and a p(+) layer with screen-printed Al alloy paste was attempted. No p(+) back surface field formation was achieved. Some good cells were produced but the heating in an endless-belt furnace caused a large scatter in sheet resistance and junction depth for three separate lots of wafers.
The relative toxicity in rats resulting from a 30 minute exposure to the combustion products of two materials, Tedlar and fluorenone-polyester film was assessed. The combustion products were generated into a static exposure system using a laboratory-scale furnace. The toxicity was assessed using the primary measurements employed in a more detailed overall toxicity evaluation. The toxicological events observed during the 30 minute exposure are reported.
The effects of various machine design parameters on the growth of web dendritic silicon ribbon were investigated. Ribbons were grown up to lengths of one meter, with widths increasing linearly up to one cm at the point of termination of growth. Thermal data were collected and evaluated for actual seeding and growth with variations in parameters affecting heat loss. It was found that for suitable growth, the mechanical system should be very rigid and stable, and the tolerances and specifications of the quartz crucibles must be far tighter than normal quartz tolerances. The widening rates of the ribbons were found to be a function of the temperature gradient rather than the temperature differences alone. A twin spacing in the seed of 3 microns to 2 microns was found to be unfavorable for growth; whereas spacing of 0.9 microns to 2 microns and 8 microns to 2 microns were favorable. Thermal modeling studies of the effects of furnace design parameters on the temperature distributions in melt and the growth of the dendritic web ribbon showed that the pull rate of the ribbon is strongly dependent on the temperature of the top thermal shield, the spacing between this shield and the melt, and the thickness of the growing web.