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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253. Here, we demonstrate electrical control by drift transport in a system with two subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. Furthermore, the measured relaxation time presents strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along [110], the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along [$1\bara{1}0$], the data shows spin lifetime that was gate dependent and longer than in the [110] direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Logical Majorana zero modes in a nanowire network

We present a scheme to use physical Majorana quasizero modes at each junction of a two-dimensional nanowire network to build a logical Majorana zero mode, the location of which is controllable through gate voltages. The wire network is a way to realize a recent proposal to imprint a Kekulé vortex pattern on a honeycomb lattice via gate voltages. We show that a specific type of junction, other than a naive Y or T junction, is needed to realize, without breaking time-reversal symmetry, an artificial “graphene” system with Majorana fermions instead of complex ones at each site. The junction we propose (i) traps exactly one physical Majorana (quasi)zero mode at each site of either a brick wall or honeycomb lattice and (ii) allows this mode to hybridize with all three neighboring sites. Using a lattice of these junctions and starting from an electronic, tight-binding model for the wires, we imprint the voltage patterns corresponding to the Kekulé vortex and observe the emergence of the logical Majorana zero mode at the vortex core. By suitable adiabatic modulations of gate voltages as a function of time, the positions of individual Kekulé vortices can be moved, and in this manner, non-Abelian braiding of the logical Majoranas bound to the vortex cores can be performed. We provide the range of parameters where these excitations could be realized experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Variational approaches to constructing the many-body nuclear ground state for quantum computing

Here, we explore the preparation of specific nuclear states on gate-based quantum hardware using variational algorithms. Large-scale classical diagonalizations of the nuclear shell model have reached sizes of 10 9 –10 10 basis states but are still severely limited by computational resources. Quantum computing can, in principle, solve such systems exactly with exponentially fewer resources than classical computing. Exact solutions for large systems require many qubits and large gate depth, but variational approaches can effectively limit the required gate depth. We use the unitary coupled cluster approach to construct approximations of the ground-state vectors, later to be used in dynamics calculations. The testing ground is the phenomenological shell model space, which allows us to mimic the complexity of the internucleon interactions. We find that often one needs to minimize over a large number of parameters, using a large number of entanglements that makes the application on existing hardware challenging. Prospects for rapid improvements with more capable hardware are, however, very encouraging.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Negative magnetoresistances (NMRs) have been widely observed in two-dimensional electron gases (2DEGs). However, their origins are under debate. Here, we report on NMRs in the 2DEG in AlGaN/GaN heterostructures, aiming to uncover their origins by utilizing electric field gating. We systematically measured the magnetoresistances in magnetic fields up to 12 T and at temperatures between 3 and 260 K and observed NMRs over a wide range of temperatures from 3 to 170 K, which become more pronounced with decreasing temperature. We conducted electric field gating experiments to correlate the occurrence of NMRs with the relationship between electron mobility and density. The latter is governed by defect scattering sources in the sample and can be theoretically modeled. Comparison of the measured electron mobility and electron density relationship with theory reveals that interface roughness scattering plays a crucial role in obtaining large NMRs. Our work demonstrates that electric field gating provides a means not only to tune the values of NMRs but also to uncover their mechanisms.

2-dimensional systems↗
DOE OSTI2024

Theory of quantum circuits with Abelian symmetries

Quantum circuits with gates (local unitaries) respecting a global symmetry have broad applications in quantum information science and related fields, such as condensed-matter theory and quantum thermodynamics. However, despite their widespread use, fundamental properties of such circuits are not well understood. Recently, it was found that generic unitaries respecting a global symmetry cannot be realized, even approximately, using gates that respect the same symmetry. This observation raises important open questions: What unitary transformations can be realized with k -local gates that respect a global symmetry? In other words, in the presence of a global symmetry, how does the locality of interactions constrain the possible time evolution of a composite system? In this work, we address these questions for the case of Abelian (commutative) symmetries and develop constructive methods for synthesizing circuits with such symmetries. Remarkably, as a corollary, we find that, while the locality of interactions still imposes additional constraints on realizable unitaries, certain restrictions observed in the case of non-Abelian symmetries do not apply to circuits with Abelian symmetries. For instance, in circuits with a general non-Abelian symmetry such as SU ( d ) , the unitary realized in a subspace with one irreducible representation (charge) of the symmetry dictates the realized unitaries in multiple other sectors with inequivalent representations of the symmetry. Furthermore, in certain sectors, rather than all unitaries respecting the symmetry, the realizable unitaries are the symplectic or orthogonal subgroups of this group. We prove that none of these restrictions appears in the case of Abelian symmetries. This result suggests that global non-Abelian symmetries may affect the thermalization of quantum systems in ways not possible under Abelian symmetries. Published by the American Physical Society 2024

Marvian, Iman↗
DOE OSTI2025

Computational Power of Random Quantum Circuits in Arbitrary Geometries

Empirical evidence for a gap between the computational powers of classical and quantum computers has been provided by experiments that sample the output distributions of two-dimensional quantum circuits. Many attempts to close this gap have utilized classical simulations based on tensor network techniques, and their limitations shed light on the improvements to quantum hardware required to frustrate classical simulability. In particular, quantum computers having in excess of approximately 50 qubits are primarily vulnerable to classical simulation due to restrictions on their gate fidelity and their connectivity, the latter determining how many gates are required (and, therefore, how much infidelity is suffered) in generating highly entangled states. Here, we describe recent hardware upgrades to Quantinuum’s H2 quantum computer, enabling it to operate on up to 56 qubits with arbitrary connectivity and 99.843(5)% two-qubit gate fidelity. We define a class of circuits with random geometries that become hard to classically simulate in very low depth and implement them utilizing the flexible connectivity of H2. A careful analysis demonstrating the fast saturation of classical simulation complexity with depth indicates that H2 can yield data well beyond the reach of state-of-the art classical simulation methods at unprecedented fidelities. We find that the considerable difficulty of classically simulating H2 is likely limited only by qubit number, demonstrating the promise and scalability of the quantum charge-coupled device architecture as continued progress is made toward building larger machines. Published by the American Physical Society 2025

DeCross, M.↗
DOE OSTI2020

SQUARE: Strategic Quantum Ancilla Reuse for Modular Quantum Programs via Cost-Effective Uncomputation

Compiling high-level quantum programs to machines that are size constrained (i.e. limited number of quantum bits) and time constrained (i.e. limited number of quantum operations) is challenging. In this paper, we present SQUARE (Strategic QUantum Ancilla REuse), a compilation infrastructure that tackles allocation and reclamation of scratch qubits (called ancilla) in modular quantum programs. At its core, SQUARE strategically performs uncomputation to create opportunities for qubit reuse. Current Noisy Intermediate-Scale Quantum (NISQ) computers and forward-looking Fault-Tolerant (FT) quantum computers have fundamentally different constraints such as data locality, instruction parallelism, and communication overhead. Our heuristic-based ancilla-reuse algorithm balances these considerations and fits computations into resource-constrained NISQ or FT quantum machines, throttling parallelism when necessary. To precisely capture the workload of a program, we propose an improved metric, the "active quantum volume," and use this metric to evaluate the effectiveness of our algorithm. Furthermore, our results show that SQUARE improves the average success rate of NISQ applications by 1.47X. Surprisingly, the additional gates for uncomputation create ancilla with better locality, and result in substantially fewer swap gates and less gate noise overall. SQUARE also achieves an average reduction of 1.5X (and up to 9.6X) in active quantum volume for FT machines.

compiler optimization↗
DOE OSTI2020

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

4-Quadrant switch↗
DOE OSTI2020

Optimized Quantum Compilation for Near-Term Algorithms with OpenPulse

Quantum computers are traditionally operated by programmers at the granularity of a gate-based instruction set. However, the actual device-level control of a quantum computer is performed via analog pulses. Here, we introduce a compiler that exploits direct control at this microarchitectural level to achieve significant improvements for quantum programs. Unlike quantum optimal control, our approach is bootstrapped from existing gate calibrations and the resulting pulses are simple. Our techniques are applicable to any quantum computer and realizable on current devices. We validate our techniques with millions of experimental shots on IBM quantum computers, controlled via the OpenPulse control interface. For representative benchmarks, our pulse control techniques achieve both 1.6x lower error rates and 2x faster execution time, relative to standard gate-based compilation. These improvements are critical in the near-term era of quantum computing, which is bottlenecked by error rates and qubit lifetimes.

Gokhale, Pranav↗
DOE OSTI2026

Temperature-Dependent Transport Characteristics of 2D MoS2 Channel FETs Grown Using Salt-Based Precursors

D Transition Metal Dichalcogenides (TMDs), particularly MoS2, are promising candidates for sub-10 nm Gate All Around (GAA) CMOS FETs. Salt-assisted Chemical Vapor Deposition (CVD) enable lateral MoS2 growth at atmospheric pressure and low temperatures. This work analyzes salt-based precursor-driven CVD-grown MoS2 FETs at various temperatures. MoS2 was grown using Ammonium Molybdate salt, sulfurized at 750∘C, and transferred onto p−Si3/SiO2 substrates. At room temperature, threshold voltage (VT) ranged from -35 V to -25 V, with a peak drain current of 1.2μA/μm. As temperature increased above 325K, VT shifted exponentially, and carrier mobility dropped significantly. At 400 K, the gate lost channel control, though gate leakage current remained low. These results are compared with non-salt-based MoS2 growth to assess salt precursor effects.Notice: This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://www.energy.gov/doe-public-access-plan).

Jones, Andrew [ORNL] (ORCID:0009000233849687)↗
DOE OSTI2023

Two Circuits for Directing and Controlling Ballistic Fluxons

Reversible logic schemes using flux solitons (fluxons) on long Josephson junctions (LJJs) have recently been proposed. The attraction of the fluxon is that it propagates ballistically along an LJJ until it encounters a change in the character of the LJJ, often a designed circuit element. Logic gates involve fluxons interacting with circuit elements and with other fluxons. However, testing of ballistic fluxon circuits requires other circuits outside the logic family to direct and control fluxon motion. Here we discuss two such non-reversible fluxon control circuits. First, the polarity filter gate is a simple non-reversible gate that allows one polarity of fluxon to pass, while reflecting the other polarity. In the off state both polarities reflect. Second, the polarity separator generalizes on the polarity filter concept and allows separation of the two fluxon polarities into different LJJs. We discuss simulations of these structures and possible applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

ARETE: Accurate Error Assessment via Machine Learning-Guided Dynamic-Timing Analysis

Nanometer circuits are increasingly prone to timing errors, escalating the need for fault injection frameworks to accurately evaluate their impact on applications. Here in this paper, we propose ARETE, a novel cross-layer, fault-injection framework that combines dynamic-binary instrumentation with machine learning-guided dynamic-timing analysis. ARETE enables accurate fault-injection into any application by estimating the location of the injecting errors via dynamic-timing analysis. To accelerate fault-injection, we develop a novel, data-aware, machine learning-based mechanism that dynamically pre-selects the error-prone instructions and limits the application of the costly dynamic-timing analysis only to them. To evaluate ARETE's accuracy, our fully automated toolflow is configured to support fault-injection based on detailed post-layout gate-level simulations as well as via existing workload-agnostic error models. Our results for various workloads, including an autonomous-driving library, show that the location and time of injected errors performed by ARETE, is 89.9% consistent with fault-injection based on full gate-level simulation. On average, ARETE executes 84.6x faster than gate-level simulation and at a cost of 3.4% loss in the program output quality estimation. When compared to the existing statistical fault-injection tools that are based on workload-agnostic error models, ARETE improves the accuracy of fault-injection rate and output quality estimation by 143.9% and 40.4% on average, respectively.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

A PCB-Embedded 1.2 kV SiC MOSFET Half-Bridge Package for a 22 kW AC–DC Converter

This article presents the design and analysis of a double-side-cooled printed circuit board (PCB) embedded silicon carbide (SiC) MOSFET half-bridge package with low loop inductances and an integrated gate driver. The 1.2 kV SiC MOSFET dies used in the half-bridge package are embedded in the PCB using AT&S's patented technique. The dies are cooled and electrically connected to traces in the PCB through copper-filled microvias. The design methodology accounts for both electrical and thermal performance, limiting the power-loop inductance to 2.3 nH and the maximum package temperature to less than the 175 °C limit. The integration of the gate drive circuitry allows for a high power density and 2.2 nH gate-loop inductances. At 0.12 K/W, the measured junction-to-case thermal resistance with double-sided cooling is 57% lower than that of a TO-247 package. Under similar operating conditions, the PCB-embedded half-bridge package also achieves a 5.6 times lower voltage overshoot and a 0.5% higher peak efficiency than a TO-247-based half-bridge. This article reports the first demonstration of PCB-embedded 1.2 kV SiC MOSFET packages in buck, boost, and ac–dc converters. Furthermore, the prototype three-phase ac–dc converter for an electric vehicle on-board charger is composed of six PCB-embedded half-bridge packages and achieves an efficiency of 98.2% and a power density of 182 W/in 3 .

42 ENGINEERING↗
DOE OSTI2020

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 10 9 and 6 × 10 3 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
DOE OSTI2021

Quantized critical supercurrent in SrTiO 3 -based quantum point contacts

Superconductivity in SrTiO 3 occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here, we demonstrate nanoscale weak links connecting superconducting leads, all within a single material, SrTiO 3 . Ionic liquid gating accumulates carriers in the leads, and local electrostatic gates are tuned to open the weak link. These devices behave as superconducting quantum point contacts with a quantized critical supercurrent. This is a milestone toward establishing SrTiO 3 as a single-material platform for mesoscopic superconducting transport experiments that also intrinsically contains the necessary ingredients to engineer topological superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Activation mechanism of the mouse cold-sensing TRPM8 channel by cooling agonist and PIP 2

The transient receptor potential melastatin 8 (TRPM8) channel is the primary molecular transducer responsible for the cool sensation elicited by menthol and cold in mammals. TRPM8 activation is controlled by cooling compounds together with the membrane lipid phosphatidylinositol 4,5-bisphosphate (PIP 2 ). Our knowledge of cold sensation and the therapeutic potential of TRPM8 for neuroinflammatory diseases and pain will be enhanced by understanding the structural basis of cooling agonist- and PIP 2 -dependent TRPM8 activation. We present cryo–electron microscopy structures of mouse TRPM8 in closed, intermediate, and open states along the ligand- and PIP 2 -dependent gating pathway. Our results uncover two discrete agonist sites, state-dependent rearrangements in the gate positions, and a disordered-to-ordered transition of the gate-forming S6—elucidating the molecular basis of chemically induced cool sensation in mammals.

Science & Technology - Other Topics↗