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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Analysis of native oxides grown on single-crystal CdTe and MgCdTe

Over the course of CdTe photovoltaics development, many refinements to the device stack have been made. One area of current interest is the back contact interface, where surface passivation is critical to prevent recombination at the interface. One candidate material for achieving strong passivation is TeO 2 . Using scanning transmission electron microscopy, we investigate native oxide formations on CdTe and Mg x Cd 1−x Te substrates to better understand the oxides' chemical composition and the interface they form with the material they are grown on. We find that substoichiometric TeO x forms as a native oxide on CdTe, and on Mg x Cd 1−x Te, we found a MgO native oxide. Some TeO x appeared atop the MgO layer, though it was not consistently present. As a result, the native oxides had preferential interface terminations, with Cd terminations at the CdTe/TeO x interface and Te terminations at the Mg x Cd 1−x Te/MgO interface.

14 SOLAR ENERGY↗
DOE OSTI2025

Optimization of simulated high-field side lower hybrid current drive coupling using machine learning predictions of scrape-off layer density

Lower hybrid current drive (LHCD) is a potential source of non-inductive off-axis current drive (CD) for tokamaks. Although LHCD has been successfully deployed on a number of tokamaks, it is highly sensitive to the scrape-off layer (SOL) conditions local to the LHCD launcher. Large gaps between the launcher and plasma core, SOL turbulence, or edge density perturbations due to edge-localized modes can hamper CD or cause large reflected power. These coupling issues in part motivated the installation of an LHCD launcher on the high-field side (HFS) of DIII-D. On the HFS, the SOL is less turbulent and more controllable compared to the low-field side. This quiescence may result in more predictable edge conditions and thus a more predictable CD. Here, in this work, HFS SOL reflectometry measurements are predicted from global plasma parameters using machine learning models. The SOL predictions coupled with the full-wave simulation of the LHCD launcher allow for the prediction of reflected power, directivity, and arcing risk before the discharge. Launcher performance is then optimized using multi-objective Bayesian optimization, finding the shot parameters that result in an optimal SOL density that maximizes CD while minimizing the risk of arcing. The predictions and optimizations of LHCD performance are then accelerated using a surrogate model of the full-wave LHCD simulation.

Bayesian optimization↗
DOE OSTI2025

Dependence of ion-cyclotron range of frequencies instabilities on species mix and fast-ion distribution: III. Novel sub-cyclotron modes

Dedicated DIII-D experiments studied instabilities above and below the ion cyclotron frequency by injecting thirteen different neutral beam populations into L-mode plasmas with different thermal compositions of H, D, and 3 He at five different values of toroidal field. Two companion papers describe the results of these experiments in detail. This paper focuses on data and analysis of two instabilities that occur at ${\sim}0.6$ of the deuterium and hydrogen cyclotron frequencies $f_\mathrm {cD}$ and $f_\mathrm {cH}$ in mixed hydrogen and deuterium plasmas. The modes below $f_\mathrm {cD}$ are often driven unstable by deuterium beams but are rarely destabilized by hydrogen beams. The modes below $f_\mathrm {CD}$ are reported here for the first time in a fusion plasma. These $\mathrm{sub-}f_\mathrm {cH}$ modes are only driven by deuterium beams but, unlike the $\mathrm{sub-}f_\mathrm {cD}$ modes, they are only unstable in plasmas with deuterium concentrations that are ${\lesssim}20\%$; they also have a smaller amplitude than the sub-deuterium modes. Addition of fully-ionized 3 He to the plasma has little effect on the sub-cyclotron deuterium modes but is stabilizing for the sub-cyclotron hydrogen modes. The modes are excited in the core and have toroidal mode numbers around 20. These trends are compared with calculations of the growth rate in a simplified model. The theory successfully predicts global Alfvén eigenmode instability with frequencies and mode numbers close to experimental values, the stronger amplitude of the sub-deuterium modes, and the species-mix dependence of the sub-hydrogen modes. Increased damping associated with the ion-ion hybrid, cutoff, and crossover frequencies plausibly accounts for the stabilization of the $\mathrm{sub-}f_\mathrm {cH}$ modes when 3 He is puffed. However, the relative stability of $\mathrm{sub-}f_\mathrm {cH}$ modes during hydrogen injection remains unexplained.

electromagnetic ion cyclotron instability↗
DOE OSTI2026

Lyapunov controlled counterdiabatic quantum optimization

We introduce a quantum algorithm that integrates counterdiabatic (CD) protocols with quantum Lyapunov control (QLC) to address combinatorial optimization problems. This approach offers versatility, allowing implementation as either a digital-analog or purely digital algorithm based on selected control strategies. By examining spin-glass Hamiltonians, we illustrate how the algorithm can explore alternative paths to enhance solution outcomes compared to conventional CD techniques. This method reduces dependence on extensive higher-order CD terms and on classical optimization techniques, making it more suitable for existing quantum computing platforms. The combination of digital compression via CD protocols and the adaptable nature of QLC methods positions this approach as a promising candidate for near-term quantum devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

𝐷-meson semileptonic decays to pseudoscalars from four-flavor lattice QCD

We present lattice-QCD calculations of the hadronic form factors for the semileptonic decays D → πℓν, D → Kℓν, and D s → Kℓν. Our calculation uses the highly improved staggered quark (HISQ) action for all valence and sea quarks and includes N f = 2 + 1 + 1 MILC ensembles with lattice spacings ranging from a ≈ 0.12 fm down to 0.042 fm. At most lattice spacings, an ensemble with physical-mass light quarks is included. The HISQ action allows all the quarks to be treated with the same relativistic light-quark action, allowing for nonperturbative renormalization using partial conservation of the vector current. We combine our results with experimental measurements of the differential decay rates to determine |V cd | D → π = 0.2238(11) Expt (15) QCD (04) EW (02) SIB [22] QED and |V cs | D → K = 0.9589 (23) Expt (40) QCD (15) EW (05) SIB [95] QED . This result for |V cd | is the most precise to date, with a lattice-QCD error that is, for the first time for the semileptonic extraction, at the same level as the experimental error. Using recent measurements from BES III, we also give the first-ever determination of |V cd | D s → K = 0.258(15) Expt (01) QCD [03] QED from D s → Klν. Our results also furnish new Standard Model calculations of the lepton flavor universality ratios $R$$^{D → π}_{μ/e}$ = 0.98671(17) QCD [500] QED , $R$$^{D → π}_{μ/e}$ = 0.97606(16) QCD [500] QED , and $R$$^{D → π}_{μ/e}$ = 0.98099(10) QCD [500] QED , which are consistent within 2σ with experimental measurements. Our extractions of |V cd | and |V cs |, when combined with a value for |V cb |, provide the most precise test of second-row Cabibbo-Kobayashi-Maskawa unitarity, finding agreement with unitarity at the level of one standard deviation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1.52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.

Silicon Carbide, Bidirectional Switch, Switching P↗
DOE OSTI2020

WIPP Safety Significant Confinement Ventilation System (SSCVS) Quality Assurance Program - 20237

Construction and major equipment fabrication are underway for a new ventilation exhaust system at the Waste Isolation Pilot Plant (WIPP). The new system will provide continuous HEPA filtration of the exhaust from the WIPP underground while meeting the ventilation demands for expanded waste emplacement and mining operations over the next 40 years. The SSCVS project has proceeded with the awarding of CD-3A for Long Lead Procurements followed by CD-2/3 approval for the construction of the facilities. The SSCVS project team made the decision to increase the quality oversight throughout the complete project per the Project Quality Assurance Plan (PQAP) such that it can ensure the final products meet applicable NQA-1 requirements and general quality requirements, and that the project will proceed to operations without significant delays due to post installation quality concerns. The PQAP was established prior to approval of the project at the CD-2/3 milestone. The SSCVS project has 2 major long lead procurements which commenced with the awarding of CD-3A. These procurements include the HEPA filter housing assemblies and the Exhaust Fans. There are 22 HEPA filter assemblies for the SSCVS, which are designated Safety Significant for pressure boundary confinement, per the approved PDSA. The exhaust fans also have Safety Significant components to maintain the pressure confinement boundary. NWP made the decision to install resident Quality Inspectors at the fabrication facilities to ensure the documentation for each fabricated unit meets all the QA requirements as defined in the respective contract documents. For the construction of the SSCVS Salt Reduction Building (SRB) and New Filter Building (NFB), dedicated, on-site quality inspectors have been utilized to ensure that all work being performed will comply with quality requirements and the Special Inspections as defined in IBC-2015. At each stage of inspection, hold points are placed into the work packages to ensure NWP QA personnel are present to inspect and verify the installations are in accordance with the design specifications, codes and standards. With this level of oversight, NWP anticipates that the level of quality related issues, as seen on multiple other DOE complex site projects, will be avoided and that the commissioning, start-up and hot operations will progress in a timely fashion, as all documentation will be in place and approved prior to initiation of these activities. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2025

Defect levels and self-compensation in iodine-doped CdTe single crystals

This study systematically documents defect levels in n-type iodine-doped cadmium telluride (CdTe:I) crystals as measured by thermoelectric effect spectroscopy, Hall-effect measurements, and photoluminescence and calculated by density functional theory. The primary donor, I Te , was identified with an activation energy of ∼0.05 eV (measured)/∼0.13 eV (calculated). Deep acceptor states, V Cd and I Te –V Cd complex, exhibited activation energies of ∼0.1 eV (measured)/∼0.19 eV (calculated) and ∼0.12 eV (measured)/∼0.24 eV (calculated), respectively. Self-compensation and Fermi level pinning were observed at ∼0.7 eV (measured)/∼1.08 eV (calculated), contributing to high resistivity in as-grown samples. Post-growth Cd annealing effectively removes compensation centers, releases iodine donors, and significantly reduces resistivity, resulting in an ideal n-type solar cell material.

Cd annealing↗
DOE OSTI2020

Materials Data on CdO2 by Materials Project

CdO2 crystallizes in the cubic Pa-3 space group. The structure is three-dimensional. Cd is bonded to six equivalent O atoms to form CdO6 octahedra that share corners with twelve equivalent CdO6 octahedra and corners with six equivalent OCd3O tetrahedra. The corner-sharing octahedral tilt angles are 71°. All Cd–O bond lengths are 2.35 Å. O is bonded to three equivalent Cd and one O atom to form OCd3O tetrahedra that share corners with three equivalent CdO6 octahedra and corners with fifteen equivalent OCd3O tetrahedra. The corner-sharing octahedral tilt angles are 70°. The O–O bond length is 1.50 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on KCd3H8Cl7O4 by Materials Project

KCd3H6O3Cl7H2O crystallizes in the monoclinic P2_1/m space group. The structure is two-dimensional and consists of two water molecules and one KCd3H6O3Cl7 sheet oriented in the (0, 0, 1) direction. In the KCd3H6O3Cl7 sheet, K1+ is bonded in a 8-coordinate geometry to three O2- and five Cl1- atoms. There are one shorter (2.80 Å) and two longer (2.93 Å) K–O bond lengths. There are a spread of K–Cl bond distances ranging from 3.12–3.61 Å. There are two inequivalent Cd2+ sites. In the first Cd2+ site, Cd2+ is bonded to one O2- and five Cl1- atoms to form a mixture of corner and edge-sharing CdCl5O octahedra. The corner-sharing octahedral tilt angles are 37°. The Cd–O bond length is 2.38 Å. There are a spread of Cd–Cl bond distances ranging from 2.61–2.72 Å. In the second Cd2+ site, Cd2+ is bonded to six Cl1- atoms to form edge-sharing CdCl6 octahedra. There are two shorter (2.60 Å) and four longer (2.71 Å) Cd–Cl bond lengths. There are three inequivalent H1+ sites. In the first H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 0.99 Å. In the second H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 1.00 Å. In the third H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 0.98 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a water-like geometry to one K1+ and two equivalent H1+ atoms. In the second O2- site, O2- is bonded in a distorted water-like geometry to one K1+, one Cd2+, and two H1+ atoms. There are four inequivalent Cl1- sites. In the first Cl1- site, Cl1- is bonded in a 3-coordinate geometry to one K1+ and two Cd2+ atoms. In the second Cl1- site, Cl1- is bonded in a distorted trigonal non-coplanar geometry to one K1+ and two equivalent Cd2+ atoms. In the third Cl1- site, Cl1- is bonded in a distorted L-shaped geometry to one K1+ and two Cd2+ atoms. In the fourth Cl1- site, Cl1- is bonded in a distorted T-shaped geometry to three Cd2+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ba4Nd2Cd3Se10 by Materials Project

Ba4Nd2Cd3Se10 crystallizes in the orthorhombic Cmc2_1 space group. The structure is three-dimensional. there are four inequivalent Ba2+ sites. In the first Ba2+ site, Ba2+ is bonded in a 8-coordinate geometry to eight Se2- atoms. There are a spread of Ba–Se bond distances ranging from 3.31–3.78 Å. In the second Ba2+ site, Ba2+ is bonded to seven Se2- atoms to form distorted BaSe7 pentagonal bipyramids that share corners with two equivalent NdSe6 octahedra, corners with two equivalent BaSe7 pentagonal bipyramids, edges with three NdSe6 octahedra, edges with three equivalent BaSe7 pentagonal bipyramids, edges with four CdSe4 tetrahedra, and faces with two equivalent BaSe7 pentagonal bipyramids. The corner-sharing octahedral tilt angles are 17°. There are a spread of Ba–Se bond distances ranging from 3.29–3.45 Å. In the third Ba2+ site, Ba2+ is bonded to seven Se2- atoms to form distorted BaSe7 pentagonal bipyramids that share corners with two equivalent NdSe6 octahedra, corners with two equivalent BaSe7 pentagonal bipyramids, corners with five CdSe4 tetrahedra, corners with two equivalent CdSe4 trigonal pyramids, edges with three NdSe6 octahedra, edges with three equivalent BaSe7 pentagonal bipyramids, an edgeedge with one CdSe4 trigonal pyramid, and faces with two equivalent BaSe7 pentagonal bipyramids. The corner-sharing octahedral tilt angles are 22°. There are a spread of Ba–Se bond distances ranging from 3.30–3.51 Å. In the fourth Ba2+ site, Ba2+ is bonded in a 8-coordinate geometry to eight Se2- atoms. There are a spread of Ba–Se bond distances ranging from 3.28–3.71 Å. There are two inequivalent Nd3+ sites. In the first Nd3+ site, Nd3+ is bonded to six Se2- atoms to form NdSe6 octahedra that share corners with two equivalent BaSe7 pentagonal bipyramids, edges with two equivalent NdSe6 octahedra, edges with three BaSe7 pentagonal bipyramids, edges with two equivalent CdSe4 tetrahedra, and edges with two equivalent CdSe4 trigonal pyramids. There are a spread of Nd–Se bond distances ranging from 2.96–3.04 Å. In the second Nd3+ site, Nd3+ is bonded to six Se2- atoms to form NdSe6 octahedra that share corners with two equivalent BaSe7 pentagonal bipyramids, corners with three equivalent CdSe4 tetrahedra, edges with two equivalent NdSe6 octahedra, and edges with three BaSe7 pentagonal bipyramids. There are three shorter (2.97 Å) and three longer (3.00 Å) Nd–Se bond lengths. There are three inequivalent Cd2+ sites. In the first Cd2+ site, Cd2+ is bonded to four Se2- atoms to form CdSe4 tetrahedra that share corners with three equivalent NdSe6 octahedra, corners with two equivalent BaSe7 pentagonal bipyramids, corners with three CdSe4 tetrahedra, and edges with two equivalent BaSe7 pentagonal bipyramids. The corner-sharing octahedra tilt angles range from 6–73°. There are a spread of Cd–Se bond distances ranging from 2.61–2.81 Å. In the second Cd2+ site, Cd2+ is bonded to four Se2- atoms to form distorted CdSe4 trigonal pyramids that share corners with two equivalent BaSe7 pentagonal bipyramids, corners with two equivalent CdSe4 trigonal pyramids, edges with two equivalent NdSe6 octahedra, and an edgeedge with one BaSe7 pentagonal bipyramid. There are a spread of Cd–Se bond distances ranging from 2.58–2.84 Å. In the third Cd2+ site, Cd2+ is bonded to four Se2- atoms to form CdSe4 tetrahedra that share corners with three equivalent BaSe7 pentagonal bipyramids, corners with three CdSe4 tetrahedra, edges with two equivalent NdSe6 octahedra, and edges with two equivalent BaSe7 pentagonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.67–2.78 Å. There are ten inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to three Ba2+ and two equivalent Nd3+ atoms to form distorted SeBa3Nd2 trigonal bipyramids that share corners with six SeBa4Cd square pyramids, corners with two equivalent SeBa3Nd2 trigonal bipyramids, edges with two equivalent SeBa4NdCd octahedra, edges with two SeBa2NdCd2 square pyramids, and edges with three SeBa3Nd2 trigonal bipyramids. In the second Se2- site, Se2- is bonded to three Ba2+ and two equivalent Nd3+ atoms to form distorted SeBa3Nd2 trigonal bipyramids that share corners with four equivalent SeBa4Cd2 octahedra, corners with two equivalent SeBa2NdCd2 square pyramids, corners with two equivalent SeBa3Nd2 trigonal bipyramids, edges with five SeBa4Cd2 octahedra, an edgeedge with one SeBa2NdCd2 square pyramid, and edges with three SeBa3Nd2 trigonal bipyramids. The corner-sharing octahedra tilt angles range from 40–50°. In the third Se2- site, Se2- is bonded to two equivalent Ba2+, one Nd3+, and two equivalent Cd2+ atoms to form distorted SeBa2NdCd2 square pyramids that share corners with two equivalent SeBa4Cd2 octahedra, corners with three SeBa2NdCd2 square pyramids, corners with two equivalent SeBa3Nd2 trigonal bipyramids, edges with two equivalent SeBa3Nd2Cd octahedra, edges with three SeBa2NdCd2 square pyramids, and an edgeedge with one SeBa3Nd2 trigonal bipyramid. The corner-sharing octahedral tilt angles are 60°. In the fourth Se2- site, Se2- is bonded to two equivalent Ba2+, one Nd3+, and two equivalent Cd2+ atoms to form distorted SeBa2NdCd2 square pyramids that share corners with two equivalent SeBa4Cd2 octahedra, corners with three SeBa2NdCd2 square pyramids, corners with two equivalent SeBa3Nd2 trigonal bipyramids, edges with three SeBa4Cd2 octahedra, edges with two equivalent SeBa2NdCd2 square pyramids, and an edgeedge with one SeBa3Nd2 trigonal bipyramid. The corner-sharing octahedral tilt angles are 53°. In the fifth Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to two Ba2+, one Nd3+, and two equivalent Cd2+ atoms. In the sixth Se2- site, Se2- is bonded to four Ba2+ and one Cd2+ atom to form distorted SeBa4Cd square pyramids that share corners with two equivalent SeBa4NdCd octahedra, corners with four SeBa2NdCd2 square pyramids, corners with four equivalent SeBa3Nd2 trigonal bipyramids, an edgeedge with one SeBa4NdCd octahedra, edges with three SeBa2NdCd2 square pyramids, and an edgeedge with one SeBa3Nd2 trigonal bipyramid. The corner-sharing octahedral tilt angles are 41°. In the seventh Se2- site, Se2- is bonded to four Ba2+ and two Cd2+ atoms to form distorted SeBa4Cd2 octahedra that share corners with six SeBa4NdCd octahedra, corners with four SeBa2NdCd2 square pyramids, corners with four equivalent SeBa3Nd2 trigonal bipyramids, edges with two equivalent SeBa4Cd2 octahedra, an edgeedge with one SeBa2NdCd2 square pyramid, an edgeedge with one SeBa3Nd2 trigonal bipyramid, and faces with two SeBa4NdCd octahedra. The corner-sharing octahedra tilt angles range from 41–58°. In the eighth Se2- site, Se2- is bonded to four Ba2+, one Nd3+, and one Cd2+ atom to form SeBa4NdCd octahedra that share corners with four SeBa4Cd2 octahedra, corners with two equivalent SeBa4Cd square pyramids, edges with three SeBa4NdCd octahedra, an edgeedge with one SeBa4Cd square pyramid, edges with four SeBa3Nd2 trigonal bipyramids, and a faceface with one SeBa4Cd2 octahedra. The corner-sharing octahedra tilt angles range from 22–53°. In the ninth Se2- site, Se2- is bonded in a 6-coordinate geometry to three Ba2+, two equivalent Nd3+, and one Cd2+ atom. In the tenth Se2- site, Se2- is bonded to three Ba2+, two equivalent Nd3+, and one Cd2+ atom to form distorted SeBa3Nd2Cd octahedra that share corners with six SeBa4Cd2 octahedra, edges with three SeBa4NdCd octahedra, edges with four SeBa2NdCd2 square pyramids, edges with two equivalent SeBa3Nd2 trigonal bipyramids, and a faceface with one SeBa4Cd2 octahedra. The corner-sharing octahedra tilt angles range from 22–58°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ba4Sm2Cd3S10 by Materials Project

Ba4Sm2Cd3S10 crystallizes in the orthorhombic Cmc2_1 space group. The structure is three-dimensional. there are four inequivalent Ba2+ sites. In the first Ba2+ site, Ba2+ is bonded in a 8-coordinate geometry to eight S2- atoms. There are a spread of Ba–S bond distances ranging from 3.17–3.68 Å. In the second Ba2+ site, Ba2+ is bonded to seven S2- atoms to form distorted BaS7 pentagonal bipyramids that share corners with two equivalent SmS6 octahedra, corners with two equivalent BaS7 pentagonal bipyramids, edges with three SmS6 octahedra, edges with three equivalent BaS7 pentagonal bipyramids, edges with two equivalent CdS4 tetrahedra, edges with two equivalent CdS4 trigonal pyramids, and faces with two equivalent BaS7 pentagonal bipyramids. The corner-sharing octahedral tilt angles are 16°. There are a spread of Ba–S bond distances ranging from 3.13–3.33 Å. In the third Ba2+ site, Ba2+ is bonded to seven S2- atoms to form distorted BaS7 pentagonal bipyramids that share corners with two equivalent SmS6 octahedra, corners with two equivalent BaS7 pentagonal bipyramids, corners with two equivalent CdS4 tetrahedra, corners with five CdS4 trigonal pyramids, edges with three SmS6 octahedra, edges with three equivalent BaS7 pentagonal bipyramids, an edgeedge with one CdS4 trigonal pyramid, and faces with two equivalent BaS7 pentagonal bipyramids. The corner-sharing octahedral tilt angles are 21°. There are a spread of Ba–S bond distances ranging from 3.18–3.38 Å. In the fourth Ba2+ site, Ba2+ is bonded in a 8-coordinate geometry to eight S2- atoms. There are a spread of Ba–S bond distances ranging from 3.15–3.59 Å. There are two inequivalent Sm3+ sites. In the first Sm3+ site, Sm3+ is bonded to six S2- atoms to form SmS6 octahedra that share corners with two equivalent BaS7 pentagonal bipyramids, edges with two equivalent SmS6 octahedra, edges with three BaS7 pentagonal bipyramids, and edges with four CdS4 trigonal pyramids. There are a spread of Sm–S bond distances ranging from 2.80–2.88 Å. In the second Sm3+ site, Sm3+ is bonded to six S2- atoms to form SmS6 octahedra that share corners with two equivalent BaS7 pentagonal bipyramids, corners with three equivalent CdS4 tetrahedra, edges with two equivalent SmS6 octahedra, and edges with three BaS7 pentagonal bipyramids. There are a spread of Sm–S bond distances ranging from 2.81–2.85 Å. There are three inequivalent Cd2+ sites. In the first Cd2+ site, Cd2+ is bonded to four S2- atoms to form CdS4 tetrahedra that share corners with three equivalent SmS6 octahedra, corners with two equivalent BaS7 pentagonal bipyramids, corners with two equivalent CdS4 tetrahedra, a cornercorner with one CdS4 trigonal pyramid, and edges with two equivalent BaS7 pentagonal bipyramids. The corner-sharing octahedra tilt angles range from 5–72°. There are a spread of Cd–S bond distances ranging from 2.49–2.71 Å. In the second Cd2+ site, Cd2+ is bonded to four S2- atoms to form distorted CdS4 trigonal pyramids that share corners with two equivalent BaS7 pentagonal bipyramids, corners with two equivalent CdS4 trigonal pyramids, edges with two equivalent SmS6 octahedra, and an edgeedge with one BaS7 pentagonal bipyramid. There are a spread of Cd–S bond distances ranging from 2.46–2.74 Å. In the third Cd2+ site, Cd2+ is bonded to four S2- atoms to form distorted CdS4 trigonal pyramids that share corners with three equivalent BaS7 pentagonal bipyramids, a cornercorner with one CdS4 tetrahedra, corners with two equivalent CdS4 trigonal pyramids, edges with two equivalent SmS6 octahedra, and edges with two equivalent BaS7 pentagonal bipyramids. There are a spread of Cd–S bond distances ranging from 2.55–2.70 Å. There are ten inequivalent S2- sites. In the first S2- site, S2- is bonded to three Ba2+ and two equivalent Sm3+ atoms to form distorted SBa3Sm2 trigonal bipyramids that share corners with six SBa4Cd square pyramids, edges with two equivalent SBa4SmCd octahedra, edges with two SBa3Sm2 square pyramids, and edges with two equivalent SBa3Sm2 trigonal bipyramids. In the second S2- site, S2- is bonded to three Ba2+ and two equivalent Sm3+ atoms to form distorted SBa3Sm2 square pyramids that share corners with four equivalent SBa4Cd2 octahedra, corners with two equivalent SBa2SmCd2 square pyramids, corners with two equivalent SBa3Sm2 trigonal bipyramids, edges with five SBa4Cd2 octahedra, edges with three SBa3Sm2 square pyramids, and an edgeedge with one SBa3Sm2 trigonal bipyramid. The corner-sharing octahedra tilt angles range from 40–51°. In the third S2- site, S2- is bonded in a 5-coordinate geometry to two equivalent Ba2+, one Sm3+, and two equivalent Cd2+ atoms. In the fourth S2- site, S2- is bonded to two equivalent Ba2+, one Sm3+, and two equivalent Cd2+ atoms to form distorted SBa2SmCd2 square pyramids that share corners with two equivalent SBa4Cd2 octahedra, corners with four SBa3Sm2 square pyramids, edges with three SBa4Cd2 octahedra, and edges with three SBa3Sm2 square pyramids. The corner-sharing octahedral tilt angles are 54°. In the fifth S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to two Ba2+, one Sm3+, and two equivalent Cd2+ atoms. In the sixth S2- site, S2- is bonded to four Ba2+ and one Cd2+ atom to form distorted SBa4Cd square pyramids that share corners with two equivalent SBa4SmCd octahedra, corners with two equivalent SBa2SmCd2 square pyramids, corners with four equivalent SBa3Sm2 trigonal bipyramids, an edgeedge with one SBa4SmCd octahedra, edges with two equivalent SBa4Cd square pyramids, and an edgeedge with one SBa3Sm2 trigonal bipyramid. The corner-sharing octahedral tilt angles are 40°. In the seventh S2- site, S2- is bonded to four Ba2+ and two Cd2+ atoms to form distorted SBa4Cd2 octahedra that share corners with six SBa4SmCd octahedra, corners with six SBa3Sm2 square pyramids, edges with two equivalent SBa4Cd2 octahedra, edges with two SBa2SmCd2 square pyramids, and faces with two SBa4SmCd octahedra. The corner-sharing octahedra tilt angles range from 41–58°. In the eighth S2- site, S2- is bonded to four Ba2+, one Sm3+, and one Cd2+ atom to form SBa4SmCd octahedra that share corners with four SBa4Cd2 octahedra, corners with two equivalent SBa4Cd square pyramids, edges with three SBa4SmCd octahedra, edges with three SBa3Sm2 square pyramids, edges with two equivalent SBa3Sm2 trigonal bipyramids, and a faceface with one SBa4Cd2 octahedra. The corner-sharing octahedra tilt angles range from 21–54°. In the ninth S2- site, S2- is bonded in a 6-coordinate geometry to three Ba2+, two equivalent Sm3+, and one Cd2+ atom. In the tenth S2- site, S2- is bonded to three Ba2+, two equivalent Sm3+, and one Cd2+ atom to form SBa3Sm2Cd octahedra that share corners with six SBa4Cd2 octahedra, edges with three SBa4SmCd octahedra, edges with four SBa3Sm2 square pyramids, and a faceface with one SBa4Cd2 octahedra. The corner-sharing octahedra tilt angles range from 21–58°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Li2CdGe by Materials Project

Li2CdGe is Heusler structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Li is bonded in a body-centered cubic geometry to four equivalent Cd and four equivalent Ge atoms. All Li–Cd bond lengths are 2.79 Å. All Li–Ge bond lengths are 2.79 Å. Cd is bonded in a body-centered cubic geometry to eight equivalent Li atoms. Ge is bonded in a body-centered cubic geometry to eight equivalent Li atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CaCd by Materials Project

CdCa is Tetraauricupride structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Ca is bonded in a body-centered cubic geometry to eight equivalent Cd atoms. All Ca–Cd bond lengths are 3.34 Å. Cd is bonded in a body-centered cubic geometry to eight equivalent Ca atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on EuCdAu by Materials Project

EuAuCd crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. Eu is bonded in a 5-coordinate geometry to five equivalent Au atoms. There are a spread of Eu–Au bond distances ranging from 3.21–3.25 Å. Au is bonded in a 9-coordinate geometry to five equivalent Eu and four equivalent Cd atoms. There are a spread of Au–Cd bond distances ranging from 2.92–3.01 Å. Cd is bonded in a 4-coordinate geometry to four equivalent Au atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on YbCdAu by Materials Project

YbAuCd crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. Yb is bonded in a 5-coordinate geometry to five equivalent Au atoms. There are a spread of Yb–Au bond distances ranging from 3.08–3.16 Å. Au is bonded in a 9-coordinate geometry to five equivalent Yb and four equivalent Cd atoms. There are a spread of Au–Cd bond distances ranging from 2.85–2.98 Å. Cd is bonded in a 12-coordinate geometry to four equivalent Au atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on EuCdPd by Materials Project

EuPdCd crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. Eu is bonded in a 5-coordinate geometry to five equivalent Pd atoms. There are a spread of Eu–Pd bond distances ranging from 3.15–3.20 Å. Pd is bonded in a 9-coordinate geometry to five equivalent Eu and four equivalent Cd atoms. There are three shorter (2.86 Å) and one longer (2.91 Å) Pd–Cd bond lengths. Cd is bonded in a 4-coordinate geometry to four equivalent Pd atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CeCd by Materials Project

CeCd is Tetraauricupride structured and crystallizes in the tetragonal P4/mmm space group. The structure is three-dimensional. Ce is bonded in a body-centered cubic geometry to eight equivalent Cd atoms. All Ce–Cd bond lengths are 3.34 Å. Cd is bonded in a body-centered cubic geometry to eight equivalent Ce atoms.

36 MATERIALS SCIENCE↗