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Program for analyzing line replacement unit (LRU) voltages in shuttle orbiter predicts minimum voltage level of main power distribution bus needed to meet predetermined LRU voltage. Loads constant-power or resistive. In some cases fed from two or three sources through diodes.
An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.
When a small generator is connected to the distribution system, the voltage at the point of interconnection is determined largely by the system and not the generator. The effect on the generator, on the load voltage and on the distribution system of a number of different voltage control strategies in the generator is examined. Synchronous generators with three kinds of exciter control are considered, as well as induction generators and dc/ac inverters, with and without capacitor compensation. The effect of varying input power during operation (which may be experienced by generators based on renewable resources) is explored, as well as the effect of connecting and disconnecting the generator at ten percent of its rated power. Operation with a constant slightly lagging factor is shown to have some advantages.
A number of key electrical safety requirements for the high voltage arrays of central station photovoltaic power systems are explored. The suitability of representative industrial DC power switchgear for control and fault protection was evaluated. Included were AC/DC circuit breakers, electromechanical contactors and relays, load interruptors, cold disconnect devices, sectionalizing switches, and high voltage DC fuses. As appropriate, steady state and transient characteristics were analyzed. Failure modes impacting upon operation and maintenance safety were also identified, as were the voltage withstand and current interruption levels.
Current-voltage characteristics were determined for stainless steel in a laboratory with a simulated ionospheric environment of 5 x 10 to the 11th to 2.5 x 10 to the 12th electrons/cu m. Panels with areas differing by a factor of up to 100 were biased between 0 and -2300 V. Secondary emission was corrected for using experimental data. The results indicate that the current-voltage characteristics are almost linear and that for voltages above about -500 V the current scales with characteristic panel length as L exp 1.2. Comparison with some theoretical predictions is discussed. Because of orbital velocity associated ion ram effects, the results of this study must be used with caution when applied to an orbiting spacecraft.
Electronically programable read-only memory (EPROM) and digital-to-analog converter provide customized time-varying voltage for frequency modulation. Voltage used to modulate IMPATT oscillator that serves as microwave pump for solid-state maser in low-noise amplifier. EPROM simple to tailor voltage waveform to suit characteristics of given maser. Digital information for waveform programed into EPROM chip; digital-to-analog converter reads information and produces corresponding analog wave. Principle readily adapted to other applications.
Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.
The output current from a metastable ionization detector (MID) is applied to a modulation voltage circuit. An adjustment is made to balance out the background current, and an output current, above background, is applied to an input of a strip chart recorder. For low level concentrations, i.e., low detected output current, the ionization potential will be at a maximum and the metastable ionization detector will operate at its most sensitive level. When the detected current from the metastable ionization detector increases above a predetermined threshold level, a voltage control circuit is activated which turns on a high voltage transistor which acts to reduce the ionization potential. The ionization potential applied to the metastable ionization detector is then varied so as to maintain the detected signal level constant. The variation in ionization potential is now related to the concentration of the constituent and a representative amplitude is applied to another input of said strip chart recorder.
Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.
Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.
An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.
Two general types of remote power controllers (RPC's), which combine the functions of a circuit breaker and a switch, were developed for use in dc aerospace systems. Power-switching devices used in the designs are the gate-turnoff thyristor (GTO) and MOSFET. The RPC's can switch dc voltages to 1200 V and currents to 1000 A. Seven different units were constructed and subjected to laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times which limit surge currents and voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout proportional to I sq T and microsecond tripout for large overloads.
In the near future, Air Force mission payloads will require significant increases in power. Sophisticated sensing systems such as infrared focal plane detector arrays and radar will be employed by the Air Force to fulfill its strategic objectives. These payloads will demand that the power subsystem provide up to 50 kW at the end of mission life, more than an order of magnitude greater than is currently required. Some of these payloads must be flown in low-Earth polar orbits to satisfy mission objectives, and it is likely that large (500 to 600 sq m) solar photovoltaic arrays will operate in the low-Earth polar environment. The standard 28 volt power subsystem is not weight efficient for the array power levels being considered. The impact of the solar array operating voltage on the total weight of the array and the subsystem power conditioning and distribution components is illustrated. In the interest of reducing power subsystem weight, higher array operating voltages are considered. The problems which the higher array voltage present to the array designer are discussed. In order to provide a maximum return on the tremendous investment of resources required to develop and place these assets in orbit, they must be designed to operate effectively for extended periods of time. To achieve this, the system must be able to function in the threat-induced and natural space environment.
Series switching diodes triggered on by passing above threshold voltage. High-voltage switch made by connecting multitude of deep-impurity, double-injection devices in series with each other and with another, triggerable high-voltage device such as thyristor. Device operates near ground potential to avoid insulation problems in triggering circuit.
Space systems in the future will probably include high-voltage, high-power energy-storage and -production systems. Two such technologies are high-voltage ac and dc systems and high-power electrodynamic tethers. The working group identified several plasma interaction phenomena that will occur in the operation of these power systems. The working group felt that building an understanding of these critical interaction issues meant that several gaps in our knowledge had to be filled, and that certain aspects of dc power systems have become fairly well understood. Examples of these current collection are in quiescent plasmas and snap over effects. However, high-voltage dc and almost all ac phenomena are, at best, inadequately understood. In addition, there is major uncertainty in the knowledge of coupling between plasmas and large scale current flows in space plasmas. These gaps in the knowledge are addressed.
The resolution of available low-voltage SEM (LVSEM) models used in the characterization of interplanetary dust particles (IDPs) is limited by a number of factors including energy spread in the electron source, beam brightness, scanning electron detector geometry, and various lens aberrations. This paper describes an improved model of LVSEM which offers an increased resolution at low voltage. The improvements include a cold cathode FE source which has an extremely low inherent energy spread and high brightness, a second condenser lens to converge the beam and maintain an optimum aperture half-angle, and a detector optimized for low-voltage scanning-electron collection. To reduce lens aberrations, the specimen is immersed in the objective lens field. The features of several IDP samples observed using the images obtained with this LVSEM model are described.
A pulsed, high-voltage source, which is able to draw a current from the surrounding plasma, is seen to induce large changes in the potential of an ionospheric satellite (the Iowa Plasma Diagnostics Package flown on Space Shuttle flight STS-51F). This, in turn, may affect the operation of other instruments that use the chassis of the satellite as a ground for electrical circuits. The magnitude of the change in satellite potential is dependent upon both the orientation of the high-voltage source, relative to the plasma flow, and the characteristics of the high-voltage source. When the satellite is grounded to the Shuttle Orbiter, this effect is sufficient to change the potential of the Orbiter by a small, but noticeable, amount.
This report contains an accumulation of publications and analyses aimed at developing guidelines for improving both high voltage and low voltage power supplies for the U.S. Air Force systems command. It is the intent of the report to supply good design and manufacturing techniques for the packaging and the building of high quality, reliable, long-life power supplies. These data are based on the wealth of engineering practices established by design and manufacturing engineers. The contents are: Fundamentals of Insulation: Gases, Liquid Dielectrics, Solid Insulation; Environment: Pressure, Particulates, Environmental Interactions with Space Power Systems, Surface Charging, System Design Criteria; Configuration and Design Data: Designs, Transients, Grounding and Bonding, Thermal Control; Materials and Processes: Insulation, Processes, Process Variables; Manufacturing: Yield, Government and Industrial Survey, Analysis, Problem Areas and Suggested Solutions, Designs That Have Worked in High Voltage Equipment, Manufacturing Summary; and Tests: Performance, Insulation Tests, Materials Testing, Component and Equipment Tests, Performance Testing, Facility and Environment, Accelerated Life Test; Maintenance and Repair: Maintenance, Test Sets, Pilots and Crewmen, Air Logistic Centers, Design Problem Recommendations.