A semiconductor-ferroelectric memory device
Monolithic optically written and electrically read semiconductor-ferroelectric memory device employing single crystal barium titanate
Sandstrom, D. B.↗
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Results for “out of memory”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Effect of composition and composition inhomogeneity on the strain sensitivity of plated wire memory elements
Composition and composition inhomogeneity effects on plated wire memory elements strain sensitivity, considering tension and torsion sensitivities
Holmen, J. O.↗
Extraretinal correction and memory for target position
Extraretinal correction and memory for target position, suggesting corrective tendency of eye movements in dark
Skavenski, A. A.↗
Pupillary responses during a short-term memory task - Cognitive processing, arousal, or both
Eye pupil response during short term memory task, noting postsignal cycle of dilation-constriction
Johnson, D. A.↗
Manganese bismuth thin film for large capacity digital memories
Material and system research defines accurate memory characteristics in regard to write, read, erase and data operations of manganese bismuth materials.
Chen, D.↗
Redundancy approaches in bubble domain memories
Fabrication of integrated circuit chips to compensate for faulty memory elements is discussed. Procedure for testing chips to determine extent of redundancy and faults is described. Mathematical model to define operation is presented. Schematic circuit diagram of test equipment is provided.
Almasi, G. S.↗
Effects of noise on the performance of a memory decision response task
An investigation has been made to determine the effects of noise on human performance. Fourteen subjects performed a memory-decision-response task in relative quiet and while listening to tape recorded noises. Analysis of the data obtained indicates that performance was degraded in the presence of noise. Significant increases in problem solution times were found for impulsive noise conditions as compared with times found for the no-noise condition. Performance accuracy was also degraded. Significantly more error responses occurred at higher noise levels; a direct or positive relation was found between error responses and noise level experienced by the subjects.
Lawton, B. W.↗
Annealing effects in plated-wire memory elements. I - Interdiffusion of copper and Permalloy.
Results of investigations using X-ray diffraction and electron-beam microprobe techniques have shown that copper and Permalloy platings interdiffuse at low temperatures when plated-wire memory elements are annealed for times as short as 50 hr. Measurable interdiffusion between Permalloy platings and gold substrates does not occur in similar conditions. Both magnetic and compositional changes during aging are found to occur by a thermally activated process with activation energies around 38 kcal/mol. It is shown, however, that copper-diffusion and magnetic-dispersion changes during aging are merely concurrent processes, neither being the other's cause.
Knudson, C. I.↗
Strain-biased PLZT input devices /page composers/ for holographic memories and optical data processing.
The features of a new class of transparent ferroelectric ceramic materials, called PLZT, are described. PLZT are shown to have very strong electrooptic properties and memory, and are switched through transparent electrodes when mechanically strained. Because of these properties, they can be used to fabricate two-dimensional page composers for coherent optical systems. Techniques for fabricating such devices are outlined along with preliminary test results. Applications in displays are shown to be also feasible.
Roberts, H. N.↗
Fabrication of magnetic bubble memory overlay
Self-contained magnetic bubble memory overlay is fabricated by process that employs epitaxial deposition to form multi-layered complex of magnetically active components on single chip. Overlay fabrication comprises three metal deposition steps followed by subtractive etch.
Source record↗
Guidance system operations plan for manned CSM earth orbital and lunar missions using program COLOSSUS 3. Section 7: Erasable memory programs
Erasable-memory programs designed for guidance computers used in command and lunar modules are presented. The purpose, functional description, assumptions, restrictions, and imitations are given for each program.
Hamilton, M. H.↗
Optical memory development. Volume 3: The membrane light value page composer
The feasibility of producing a page composer for optical memory systems using thin, deformable, membrane-mirror elements as light valves was investigated. The electromechanical and optical performances of such elements were determined both analytically and experimentally. It was found that fast switching (approximately 10 microseconds), high-contrast (10 or greater), fatigue-free operation over missions of cycles, and efficient utilization of input light could be obtained with membrane light valves. Several arrays of 64 elements were made on substrates with feedthroughs, allowing access to individual elements from the backside of the substrate. Single light valves on such arrays were successfully operated with the transistors designed and produced for selection and storage at each bit location. This simulated the operation of a prototype page composer with semiconductor chips beam-lead bonded to the back of the substrate.
Cosentino, L. S.↗
Updated optical read/write memory system components
The fabrication of an updated block data composer and holographic storage array for a breadboard holographic read/write memory system is described. System considerations such as transform optics and controlled aberration lens design are described along with the block data composer, photoplastic recording materials, and material development.
Source record↗
The light-sensitive MNOS memory transistor.
The behavior theory of the light-sensitive MNOS memory transistor is developed and supported by presented experimental evidence. It is shown that the nitride, oxide, and silicon space-charge current-field relationships necessary for comparison of theory and experiment can be obtained from steady-state current-voltage measurements on the MNOS device.
Sewell, F. A., Jr.↗
Intermediate memory devices
Several methods of transfer and processing of data whose practical implementation requires operational memory devices are described. Devices incorporating multistable elements are proposed and their main parameters are given. The possibility of using the proposed devices for storing information for transmission in space radio communications channels is examined.
Basalayev, G. V.↗
Measurement of irregularities in angular velocities of rotating assemblies in memory devices on magnetic carriers
Problems in measurement of irregularities in angular velocity of rotating assemblies in memory devices with rigid and flexible magnetic data carriers are discussed. A device and method for determination of change in angular velocities in various frequency and rotation rate ranges are examined. A schematic diagram of a photoelectric sensor for recording the signal pulses is provided. Mathematical models are developed to show the amount of error which can result from misalignment of the test equipment.
Virakas, G. I.↗
Heterodyne readout for read-write holographic memories
A heterodyne readout technique for read-write holographic memory systems that reconstruct a virtual image wavefront is described and demonstrated. The conventionally recorded hologram is illuminated simultaneously with a suitable combination of temporally modulated reference and modified object waves for readout. Best performance is obtained for temporal phase modulation. The coupling of the illuminating wavefronts by the hologram is analyzed.
Mezrich, R. S.↗
Unique properties of SBN and their use in a layered optical memory
Holographic storage experiments using crystal Sr(0.75)Ba(0.25)Nb2O6 (SBN 75/25) as a volume-phase holographic medium show that this material is the most sensitive crystalline storage medium yet discovered. An exposure level of 0.003 J/sq cm at 0.488 micron produces a 1% diffraction efficiency in a 5-mm length of crystal. In addition to high recording sensitivity, SBN 75/25 exhibits interesting electric-field induced effects that include electric-field enhanced recording sensitivity and voltage-switchable latent-to-active holographic reconstruction efficiency. These effects are explained in terms of drift and diffusion of photoionized carriers coupled with the nonlinear electrooptic behavior characteristic of this low Curie temperature ferroelectric crystal. A mechanism is proposed that correlates the observed electrically controlled holographic response with the dielectric behavior of the crystal. These interesting effects are used to implement a novel, layered optical memory having no moving parts and having electrical access for writing or reading selected layers.
Thaxter, J. B.↗