NASA NTRS · 19730049419
The light-sensitive MNOS memory transistor.
Abstract
The behavior theory of the light-sensitive MNOS memory transistor is developed and supported by presented experimental evidence. It is shown that the nitride, oxide, and silicon space-charge current-field relationships necessary for comparison of theory and experiment can be obtained from steady-state current-voltage measurements on the MNOS device.
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Sewell, F. A., Jr.. 1973-06-01. The light-sensitive MNOS memory transistor.. https://ntrs.nasa.gov/citations/19730049419
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