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At least 1,117 records · Page 62

Heat transfer device having an enclosure and a non-permeable barrier inside the enclosure

A heat transfer device includes a hollow spacer between opposed substrates, defining an enclosure, at least one of the substrates adapted to be secured to at least one heat source. A non-permeable barrier is in the enclosure between the substrates. A first chamber inside the enclosure is defined by the spacer, the substrates, and the barrier, the first chamber in fluid communication with at least one first inlet and first outlet. A second chamber inside the enclosure and outside the first chamber and is defined by the spacer, the substrates, and the barrier, the second chamber in fluid communication with at least one second outlet. A wick structure is secured to at least one substrate, a first portion of the wick structure in the first chamber, and a second portion of the wick structure in the second chamber and interconnecting in passive liquid communication with the first portion.

Shaeri, Mohammad Reza↗

Plasma-based edge terminations for gallium nitride power devices

A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.

Zhao, Yuji↗

Redox active polymer devices and methods of using and manufacturing the same

The disclosed technology relates generally to apparatus comprising conductive polymers and more particularly to tag and tag devices comprising a redox-active polymer film, and method of using and manufacturing the same. In one aspect, an apparatus includes a substrate and a conductive structure formed on the substrate which includes a layer of redox-active polymer film having mobile ions and electrons. The conductive structure further includes a first terminal and a second terminal configured to receive an electrical signal therebetween, where the layer of redox-active polymer is configured to conduct an electrical current generated by the mobile ions and the electrons in response to the electrical signal. The apparatus additionally includes a detection circuit operatively coupled to the conductive structure and configured to detect the electrical current flowing through the conductive structure.

Johnson, Paul B.↗

Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V Devices

In this work, we apply the morphology control of hydride vapor phase epitaxial (HVPE) growth to planarize faceted, non-planar substrates. Controlled spalling is a promising high-throughput substrate reuse technology that could reduce substrate costs for III-V devices; however, the spalling fracture for (100)-oriented GaAs substrates produces a regularly corrugated surface of facets that are 5-20 um in height. We discuss how to planarize these surfaces using only a few minutes of HVPE growth and how to minimize the impact on throughput when integrating faceted wafers into a potential manufacturing process at scale.

epitaxy↗

Multi-metal catalysts and devices and methods of use thereof

Novel multi-metal catalysts comprising abundant Earth metals are described herein. Devices comprising the catalysts of the invention are also described.Methods of producing the catalysts are also described herein.Methods of producing hydrogen using the catalysts of the invention are also described herein.

Strongin, Daniel R.↗

Optoelectronic devices and methods of making the same

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Palmstrom, Axel Finn↗

Open-top microfluidic devices and methods for simulating a function of a tissue

A device for simulating a function of a tissue includes a first structure, a second structure, and a membrane. The first structure defines a first chamber. The first chamber includes a matrix disposed therein and an opened region. The second structure defines a second chamber. The membrane is located at an interface region between the first chamber and the second chamber. The membrane includes a first side facing toward the first chamber and a second side facing toward the second chamber. The membrane separates the first chamber from the second chamber.

Varone, Antonio↗

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗

Orbiting scroll device lubrication

A scroll device includes a fixed scroll with an idler shaft bearing, an orbiting scroll with another idler shaft bearing; and an eccentric idler shaft having first and second arms extending in opposite directions and ending at first and second ends, the first and second arms supported by the fixed scroll idler shaft bearing and the orbiting scroll idler shaft bearing, respectively. The eccentric idler shaft has a hollow core extending from the first end to the second end, with at least one channel extending through the first arm and enabling fluid communication between the hollow core and the at least one first bearing, and at least one second channel extending through the second arm and enabling fluid communication between the hollow core and the least one second bearing.

Nicholas, Nathan D.↗

Device and method for improving specific energy requirement of plasma pyrolyzing or reforming systems

Devices and methods for reducing the specific energy required to reform or pyrolyze reactants in plasmas operating at high flow rates and high pressures are presented. These systems and methods include 1) introducing electrons and/or easily ionized materials to a plasma reactor, 2) increasing turbulence and swirl velocity of the flows of feed gases to have improved mixing in a plasma reactor, and 3) reducing slippage from a plasma reactor system. Such plasma systems may allow plasma reactors to operate at lower temperatures, higher pressure, with improved plasma ignition, increased throughput and improved energy efficiency. In preferred embodiments, the plasma reactors are used to produce hydrogen and carbon monoxide, hydrogen and carbon, or carbon monoxide through reforming and pyrolysis reactions. Preferred feedstocks include methane, carbon dioxide, and other hydrocarbons.

Bromberg, Leslie↗

Compositions and methods for energy storage device electrodes

An energy storage device can include a cathode, an anode, and a separator between the cathode and the anode, where the anode and/or electrode includes an electrode film having a super-fibrillized binder material and carbon. The electrode film can have a reduced quantity of the binder material while maintaining desired mechanical and/or electrical properties. A process for fabricating the electrode film may include a fibrillization process using reduced speed and/or increased process pressure such that fibrillization of the binder material can be increased. The electrode film may include an electrical conductivity promoting additive to facilitate decreased equivalent series resistance performance. Increasing fibrillization of the binder material may facilitate formation of thinner electrode films, such as dry electrode films.

Raman, Santhanam↗

One-way transfer device with secure reverse channel

A data diode provides a flexible device for collecting data from a data source and transmitting the data to a data destination using one-way data transmission across a main channel. On-board processing elements allow the data diode to identify automatically the type of connectivity provided to the data diode and configure the data diode to handle the identified type of connectivity. Either or both of the inbound and outbound side of the data diode may comprise one or both of wired and wireless communication interfaces. A secure reverse channel, separate from the main channel, allows carefully predetermined communications from the data destination to the data source.

Lee, Sang Cheon↗

One-way transfer device with secure reverse channel

A data diode provides a flexible device for collecting data from a data source and transmitting the data to a data destination using one-way data transmission across a main channel. On-board processing elements allow the data diode to identify automatically the type of connectivity provided to the data diode and configure the data diode to handle the identified type of connectivity. Either or both of the inbound and outbound side of the data diode may comprise one or both of wired and wireless communication interfaces. A secure reverse channel, separate from the main channel, allows carefully predetermined communications from the data destination to the data source.

Lee, Sang Cheon↗