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The design and operation of a switched phase modulation system for the Urbana Radar System are discussed. The system is implemented and demonstrated using a simple procedure. The radar system and circuits are described and analyzed.
Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.
A novel pipeline digital-to-analog converter configuration, based on switched-capacitor techniques, is described. An n-bit D/A conversion can be implemented by cascading n + 1 unit cells. The device count of the circuit increases linearly, not exponentially, with the conversion accuracy. The new configuration can be pipelined. Hence, the conversion rate can be increased without requiring a higher clock rate. An experimental 10-bit DAC prototype has been fabricated using a 3-micron CMOS process. The results show that high-speed, high-accuracy, and low-power operation can be achieved without special process or postprocess trimming.
A brief discussion of short circuit protection for lithium D cells is given in viewgraph format. The following topics are presented: (1) historical need; (2) program objectives; (3) composite thermal switch (CTS) development; (4) laboratory cells with CTS; and (5) the incorporation of CTS into lithium D cells.
Further improvements in the performance of integrated electronics will eventually halt due to practical fundamental limits on our ability to downsize transistors and interconnect wiring. Avoiding these limits requires a revolutionary approach to switching device technology and computing architecture. Nanoelectronics, the technology of exploiting physics on the nanometer scale for computation and communication, attempts to avoid conventional limits by developing new approaches to switching, circuitry, and system integration. This presentation overviews the basic principles that operate on the nanometer scale that can be assembled into practical devices and circuits. Quantum resonant tunneling (RT) is used as the center-piece of the overview since RT devices already operate at high temperature (120 degrees C) and can be scaled, in principle, to a few nanometers in semiconductors. Near- and long-term applications of GaAs and silicon quantum devices are suggested for signal and information processing, memory, optoelectronics, and radio frequency (RF) communication.
Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.
Integration of phase change material (PCM) with photonic integrated circuits can transform large-scale photonic systems by providing non-volatile control over phase and amplitude. The next generation of commercial silicon photonic processes can benefit from the addition of PCM to enable ultra-low power, highly reconfigurable, and compact photonic integrated circuits for large-scale applications. Despite all the advantages of PCM-based photonics, today’s commercial foundries do not provide them in their silicon photonic processes yet. We demonstrate the first-ever electrically programmable PCM device that is monolithically post-processed in a commercial foundry silicon photonics process using a few fabrication steps and coarse-resolution photolithography. These devices achieved 1.4 dB/μm of amplitude switching contrast using a thin layer of 12.5 nm GeSbTe in this work. We have also characterized the reconfiguration speed as well as repeatability of these devices over 20,000 switching cycles. Our solution enables non-volatile photonic VLSI systems that can be fabricated at low cost and high reliability in a commercial foundry process, paving the way for the development of non-volatile programmable photonic integrated circuits for a variety of emerging applications.
This article presents a tri-port current-source soft-switching medium-voltage string inverter (TMVSI) to reduce the Levelized cost of energy (LCOE) of large-scale solar-plus-storage (SPS) farms. Throughout this work, the topology, operating principle, circuit simulation, control, and hardware design of the TMVSI are introduced. In addition, three key challenges compromising the performance of the TMVSI are addressed in this article. First, a new feed-forward compensation for model predictive control of the TMVSI is proposed to compensate for sampling and computational delay and high dc-link ripple with low computational cost and high scalability. Second, the use of laminated permanent magnets is proposed to reduce the losses of the MV medium-frequency transformer (MFT) in the TMVSI while increasing its saturation current. Finally, an improved U-shape winding pattern is proposed to decrease the leakage inductance of the MV MFT and reduce the voltage stress across semiconductor switches without adding cost or complexity. Here, the effectiveness of the TMVSI is validated by experiments at up to 20kW/500V in different test cases with custom-built prototypes. The contributions of this work make the TMVSI a viable solution to SPS farms and unleash its potential for LCOE reduction.
Here, this article introduces a unified trapezoidal wave (UTW) modulation scheme for the isolated modular multilevel dc–dc (IM2dc) converter, which consolidates multiple existing modulation strategies for the IM2dc converter, including the quasi-square wave (QSW) modulation, trapezoidal wave modulation, and sinusoidal wave modulation, into a unified framework. Furthermore, this article introduces the harmonic state-space (HSS) equations to model the IM2dc converter based on the UTW modulation method. The HSS model operates in the frequency domain, enabling it to circumvent the complexities associated with time-domain analysis and seamlessly integrate with the UTW modulation. This article proceeds to analyze the real and reactive power transfer characteristics of the IM2dc converter, as well as the power factor, considering the influence of multiple modulation parameters. Subsequently, it delves into the examination of zero voltage switching (ZVS) conditions for the IM2dc converter based on the UTW modulation and the HSS model. The complete ZVS boundaries of the IM2dc converter, taking various voltage ratios into account, are derived. This article also illustrates the effects of including harmonic orders in the modeling process, modulation parameters, and internal harmonic ripples on the ZVS boundaries. Finally, experimental validation of the analyses is conducted on a down-scaled prototype.
Topological method uses the eye as pattern detector to trace path of transmission on truth table. Pathway selection is continually supervised by logician, allowing him to seek planar iterative solution desirable for fabrication of monolithic circuits. Method applies to parity generators, multiple output functions, full adders, and bit comparators.
This paper presents a generic and multifunctional electromagnetic transient (EMT) dynamic model of grid-following (GFL) inverter-based resources (IBRs) using the PSCAD software platform. The features of the model include flexibility in selecting various types and combinations of DC sources covering photovoltaic modules, battery modules, and ideal DC-source modules as well as flexibility in selecting either switching or averaged models of the inverter. This model also covers exhaustive lists of controller algorithm, including open-loop/closed-loop PQ dispatch control, DC voltage and AC terminal voltage control, and conventional current control designed in the dq-domain, the ..alpha....beta.. -domain, and the positive-/negative-sequence domain. Moreover, this model is equipped with flexibility in selecting various types of current-limiting schemes, including saturation-based and latching-based current limiters, and anti-windup protection. Also, the EMT model is agnostic to the MVA rating and is suitable for interfacing transmission systems by complying with IEEE Std. 2800. The generality in the power circuits and the multifunctional options in the operation and control of the developed EMT model make it suitable for both academia and industry to study various power system aspects, including, but not limited to, the fault behavior of GFL IBRs, the impacts on the protection system, and the transient stability of a system interfaced with large numbers of GFL IBRs.
We propose a scheme to realize all-optical temporal differentiation calculation to input pulse in an inverse Y-type four-level atomic system driven by a strong standing-wave. Two optical blockades are created at individual wavelengths of two probe fields in presence of one single strong standing-wave field. On one hand, ultra-narrow transmission windows are produced for probe pulse field 1 when probe field 2 is so strong as a controlling field in EIT configuration. The system can be designed as a phase-reverter of weak probe field 1 and can perform temporal differentiation calculation to it because aπ phase shift is created. On the other hand, the blockade at probe field 2 can be burst in two-photon resonance configuration when probe field 1 becomes strong and saturated absorption takes effect. So a two-photon switching is also expected in this standing-wave-dressed atomic system. The scheme has a potential for an all-optical transistor in quantum logical circuits.
The switching rate of gas-discharge devices “kivotrons” based on the open discharge with counter-propagating electron beams has been experimentally studied. Structures with 2-cm{sup 2} overall cathode area were examined. The switching time was found to show a monotonic decrease with increasing the working-gas helium pressure and with increasing the voltage across the discharge gap at breakdown. The minimum switching time was found to be ∼240 ps at 17 kV voltage, and the maximum rate of electric-current rise limited by the discharge-circuit inductance was 3 × 10{sup 12 }A/s.
Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics. From materials and devices to modules and circuits to application-ready systems integration, ARPA-E projects have demonstrated the potential of WBG semiconductors to lower the cost of high-efficiency power electronics to enable broad adoption in energy applications.
Seven integrated circuits incorporated at very low cost into frequency counters and digital voltmeters performing a voltage-to-frequency conversion permit automatic range changing. Extra decades are switched into and out of the counting chain as a function of the counter during the previous counting period.
The magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.
Three digital simulation techniques for MOS integrated circuit faults were examined. These techniques embody a hierarchy of complexity bracketing the range of simulation levels. The digital approaches are: transistor-level, connector-switch-attenuator level, and gate level. The advantages and disadvantages are discussed. Failure characteristics are also described.
The design and testing of a small inductive pulsed plasma thruster (IPPT) is described. The device was built as a test-bed for the pulsed gas-valves and solid-state switches required for a thruster of this kind, and was designed to be modular to facilitate modification. The thruster in its present configuration consists of a multi-turn, spiral-wound acceleration coil (270 millimeters outer diameter, 100 millimeters inner diameter) driven by a 10 microfarad capacitor and switched with a high-voltage thyristor, a propellant delivery system including a fast pulsed gas-valve, and a glow-discharge pre-ionizer circuit. The acceleration coil circuit may be operated at voltages up to 4 kilovolts (the thyristor limit is 4.5 kilovolts) and the thruster operated at cyclic-rates up to 30 Herz. Initial testing of the thruster, both bench-top and in-vacuum, has been performed. Cyclic operation of the complete device was demonstrated (at 2 Herz), and a number of valuable insights pertaining to the design of these devices have been gained.