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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,099 records · Page 61
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Piecewise simulaton proton test of gallium arsenide and thin silicon solar cells

Gallium Arsenide (GaAs) solar cells are viewed as a potential primary power source on certain future Earth orbiting satellites. However, the relative merits of gallium arsenide over silicon in a space radiation environment are largely unknown because a general degradation model for gallium arsenide does not exist. The results of a test simulating the proton radiation environment existing in a polar orbit and the concomitant effects on GaAs and thin silicon (Si) solar cells are presented. The objectives and methodology of the simulation test were discussed. The electrical characteristics of GaAs and Si solar cells are given in graph form. It was concluded that GaAs cells are viable for use on satellites in low Earth orbit.

Peterson, D. G.↗
NASA NTRS1983

Preliminary study of a radiantly heated fluidized bed for the production of high purity silicon

The preparation of very pure silicon from silane (SIH4) using radiant heating of the hot silicon particles of a fluidized bed is discussed. The fraction of electrical energy supplied to the heater which is actually absorbed by the particles and the heat transfer coefficient between the hot bed and the cool distributor plate were investigated. The experimental design is presented and the results of the study are summarized.

Levenspiel, O.↗
NASA NTRS1984

Process research of non-CZ silicon material

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Campbell, R. B.↗
NASA NTRS1983

Process research of non-CZ silicon material

High risk, high payoff research areas associated with the Westinghouse process for producing photovoltaic modules using non- CZ sheet material were investigated. All work was performed using dendritic web silicon. The following tasks are discussed and associated technical results are given: (1) determining the technical feasibility of forming front and back junctions in non-CT silicon using dopant techniques; (2) determining the feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask; (3) determining the feasibility of applying liquid anti-reflective solutions using meniscus coating equipment; (4) studying the production of uniform, high efficiency solar cells using ion implanation junction formation techniques; and (5) quantifying cost improvements associated with process improvements.

Source record↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1984

New electron trap in p-type Czochralski silicon

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Mao, B.-Y.↗
NASA NTRS1982

Towards a 700 mV silicon solar cell

The key to improved silicon solar cell performance lies in increasing cell open circuit voltage. Not only does improved voltage direclty increase cell efficiency, but it also increases the limiting value of fill factor and decreases the temperature sensitivity of the cell. Limits on attainable open circuit voltage are not well defined. A thermodynamic limit of 850 mV exists for black body silicon cells, with 700 mV long regarded as a practical limit. This paper describes experimental work which has resulted in experimental devices with open circuit voltages approaching 700 mV. Values up to 694 (AM0, 25 C) have been demonstrated. The cells are similar in structure to conventional p-n junction cells, but particular attention is paid to passivating the entire top surface of the cell, including regions under the top contact.

Green, M. A.↗
NASA NTRS1983

Ion implanted junctions for silicon space solar cells

This paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.

Spitzer, M. B.↗
NASA NTRS1984

Increased radiation resistance in lithium-counterdoped silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

Weinberg, I.↗
NASA NTRS1984

18-percent efficient terrestrial silicon solar cells

Silicon solar cells are described which operate at energy conversion efficiencies in excess of 18 percent under standard terrestrial test conditions (AM1.5, 100 mW/sq cm, 28 C). These are believed to be the most efficient silicon cells reported to date. The high efficiency is a result of the combination of high open-circuit voltage due to the careful attention paid to passivation of the top surface of the cell; high fill factors due to the high open-circuit voltage and low parasitic resistance losses; and high short-circuit current due to the use of shallow diffusions, a low grid coverage, and an optimized double-layer antireflection coating.

Blakers, A. W.↗
NASA NTRS1985

Filament Guides for Silicon-Ribbon Growth

Contamination reduced in modified growth system. In Silicon-ribbongrowth apparatus, capillary filament guides are integral parts of crucible, extending from bottom to top of melt. Addition of guides expected to result in better thermal control of growth process and higher silicon purity.

Morrison, A. D.↗
NASA NTRS1985

Silicone-Rubber Stitching Seal

Fabric products protected from raveling by coating threads and filling stitching holes with silicone rubber. Uncored silicone rubber applied to stitching lines with air-pressurized sealant gun. Next, plastic release film placed on coated side, and blanket flipped over so release film lies underneath. Blanket then bagged and adhesive cured under partial vacuum of about 3.5 psi or under pressure. Applications include balloons, parachutes, ultralight aircraft, sails, rescue harnesses, tents, or other fabric products highly stressed in use.

Wang, D. S.↗
NASA NTRS1986

Improved Jet-Mill Silicon Grinder

Proposed refinement in jet-mill grinding of silicon reduces proportion of unusable, overly ground particles. Particles serve as seeds for growth of silicon from vapor. In new grinding apparatus, particle separator distinct from collision chamber. Particle collides only once before sorted for size. If proper size, extracted; if not, returned to chamber for another collision.

Collins, Earl R., Jr.↗
NASA NTRS1984

Silicon nitride sintered body

The sintering of silicon carbide and it production are described. The method of production is by calcination in which molding is followed by sintering without compression. The invention improves the composition of the silicon carbide ceramic. Six examples of the invention are illustrated and discussed.

Suzuki, K.↗
NASA NTRS1984

Silicon carbide ceramic production

A method to produce sintered silicon carbide ceramics in which powdery carbonaceous components with a dispersant are mixed with silicon carbide powder, shaped as required with or without drying, and fired in nonoxidation atmosphere is described. Carbon black is used as the carbonaceous component.

Suzuki, K.↗
NASA NTRS1984

Fatigue behavior of continuous fiber silicon-carbide-aluminum composites

Four lay-ups of continuous fiber silicon carbide (SCS2) fiber/aluminum matrix composites were tested to assess fatigue mechanisms including stiffness loss when cycled below their respective fatigue limits. The lay-ups were 0 (sub 8), 0(sub 2)/ + or - 45 (sub 2s), 0/90 (sub 2s),and 0/ + or 45/90 (subs). The data were compared with predictions from the author's previously published shakedown model which predicts fatigue-induced stiffness loss in metal matrix composites. A fifth lay-up, + or - 45 (sub 2s), was tested to compare shakedown and fatigue limits. The particular batch of silicon-carbide fibers tested in this program had a somewhat lower modulus (340 GPa) than expected and displayed poor bonding to the aluminum matrix. Good agreement was obtained between the stiffness loss model and the test data. The fatigue damage below the fatigue limit was primarily in the form of matrix cracking. The fatigue limit corresponded to the laminate shakedown for the + or - 45 (sub 2s) laminate.

Johnson, W. S.↗
NASA NTRS1984

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Mesch, H. G.↗
NASA NTRS1983

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Moriarty, J. A.↗