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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The market share of silicon heterojunction (SHJ) modules are expected to increase in the following years. The presentation discusses field performance of SHJ and compares it to other high-efficiency modules. In-depth materials characterization is used to understand the origins of degradation in these type of modules.
Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III-V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al 0.18 Ga 0.33 In 0.49 P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. Furthermore, the electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.
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Tessolar module technology was developed to allow the incorporation of 5 incremental module material innovations. Combined, these innovations may improve the efficiency and durability of the standard silicon cell module. The innovations evaluated are: electrically conductive adhesive (ECA) replacing soldering of tabbing ribbons, light-capturing ribbon (LCR), silicone encapsulant, 2 mm front glass with backsheet, and a polymer-composite module frame. Tessolar-constructed individually encapsulated cells incorporating the material innovations are used to assemble 60-cell modules. 2 x 2 cell mini-modules of the same materials were produced for combined-accelerated stress testing (C-AST). C-AST results demonstrate that the 2 x 2 cell mini-module of Tessolar construction out-performed mini-modules using both ECA with EVA and standard solder with EVA constructions in power production over 108 cycles of testing.
The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.
We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ~870 nm to 930 nm and results in >2 mA/cm 2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m 2.
Shallow acceptors in single crystal CdTe induced by Group V (P, As, and Sb) doping are identified by thermoelectric effect spectroscopy (TEES). Understanding defects in Group V doped CdTe is critical to improving and controlling the acceptor density and lifetime in the absorber material which is an important factor determining the open circuit voltage and efficiency in CdTe solar cells.
Precise band alignment at the front interface of CdTe-based solar cells is necessary to reduce photoexcited charge carrier recombination and to enable higher energy conversion efficiencies. Magnesium zinc oxide is not only transparent but also offers the ability to tune the conduction band offset with CdTe at the front of the device stack. In this work, we describe reactive sputtering of Mg 1-x Zn x O using metal targets and its application in CdTe photovoltaics. Combinatorial libraries of Mg 1-x Zn x O were created to tune the conduction band alignment for the optimal performance of CdTe solar cells. Band gap variation of more than 0.4 eV is achieved across a 3-inch substrate. Kelvin probe measurements demonstrate variance of work function across the substrate. Device performance is optimized at band gaps of 3.5 eV for the CdTe device processing conditions employed in this study.
Cracking of polyamide (PA)-based photovoltaic (PV) backsheet materials has been widely reported for field-aged modules. Failure was not detected by conventional accelerated stress tests (ASTs), which lacked the necessary combination of stress factors and/or factor sequences. PA-based AAA backsheet cracking has since been reproduced through combined and sequential stress testing. Planar- and cross-sectional-optical microscopy as well as Fourier-transform Infrared Spectroscopy (FTIR), have been used to elucidate the mechanical and chemical changes which lead to failure of the backsheet. Field-aged backsheet samples demonstrating failure in various climates (including locations in China and Italy) are also analyzed. Through the analysis, a comparison is made between the different stress testing protocols and the field-aged samples to validate relevance of the advanced stress tests. It is shown that the changes induced through combined-accelerated stress testing (C-AST) were most representative of changes induced by the field, supporting the relevance of C-AST and providing validity for the test protocol.
Several studies have found indications that PV degradation may increase in hotter climates. We show in this paper that degradation does correlate to higher module temperatures, but that these temperatures are significantly affected by the module mounting and. The mechanisms of degradation vary with module technology and quality. Using data from different HIT module installations we were able to extract an activation energy that is consistent with hydrogen passivation layer degradation. In addition, we show that low degradation in hot climates can be achieved for Al-BSF technology if properly installed to reduce heat transfer in order to thermally decouple the modules from the roof. We also found that monofacial and bifacial PERC module degradation is in line with historical degradation rates of Al-BSF.
Here, we report doping of cadmium telluride (CdTe) thin film solar cells using copper (II) chloride (CuCl 2 ) solution in deionized water. The CdTe thin films were immersed in 0.1 mmol CuCl 2 solution in water and annealed in the temperature range of 180-240 degrees C for various time durations. The devices were completed using thermally evaporated gold (Au) and measured under simulated AM1.5G spectrum. The average device efficiency of CuCl 2 treated CdTe devices increased to 13.7 % (best cell reaching 14.0%) with significant improvement on open-circuit voltage (VOC ) as compared with 12.4% (best cell 12.7%) for thermally evaporated Cu doped CdTe devices. For CuCl 2 treated CdTe devices, we found higher photoluminescence (PL) intensity and longer carrier life time at room temperature indicating solution based doping offers better control of Cu doping density as compared with evaporated Cu.
One of the ways to reduce the cost of solar electricity to 3/kWh, thus reaching parity with fossil-fuel-based generation, is to reduce the degradation rate of solar modules and extend their lifetime well beyond 30 years. The extended module lifetime in turn can positively influence the financial model and the bankability of utility-scale PV projects. Today, the highest-riskpriority solar module degradation mechanism is what is known as hot spots, often induced by cell cracks. In order to address this degradation mechanism, we make use of low-cost, multi-walled carbon nanotubes embedded in commercial screen-printable silver pastes. When the carbon nanotubes are properly functionalized and appropriately incorporated into commercial silver pastes, the resulting metal contacts on solar cells, after screen-printing and firing, show exceptional fracture toughness. These composite metal contacts possess increased ductility, electrical gap-bridging capability up to 50 um, and 'self-healing' to regain electrical continuity even after cycles of complete electrical failure under extreme strain.
Understanding the causes of photovoltaic module failure in the field can be achieved using spatially-resolved imaging tools in combination with current-voltage (IV) characterization. We evaluate 23 field-degraded modules by comparing their IV characteristics with module images obtained by electroluminescence, photoluminescence, UV-fluorescence, and dark lock-in thermography. We identify primarily metallization failures (metallization series resistance, solder point heating, broken fingers, disrupted interconnects) in these modules that has led to a severe drop in the fill factor and up to 35% power loss over only 2 years of deployment.
We develop a model showing how reflection from both the front and back contacts of thermophotovoltaic (TPV) cells affects the system efficiency. From this foundation we determine the design rules for front grids for TPV cells, and assess the consequences of those rules on cell design and system performance. We show that these design rules are different and more complex than the corresponding design rules for solar photovoltaic (PV) cells, and can lead to substantially different grid design and system performance than if the simpler solar PV design rules were used.
Monolithic two-terminal (2-T) all-perovskite tandem solar cells are a promising candidate for the next generation solar cells with ultrahigh efficiency and low fabrication cost. Here, we report on the fabrication of 2-T all-perovskite tandem solar cells consisting of solution-processed wide-bandgap and low-bandgap perovskite subcells connected by a vacuum processed interconnection layer. We employed a bulk-passivation strategy to enlarge the grain size, increase carrier mobilities, reduce electronic disorder, and suppress trap-assisted recombination in the low bandgap mixed Sn-Pb perovskite films, which leads to improved performance of low bandgap perovskite solar cells with an absorber thickness over 750 nm. This advance in high-quality low-bandgap perovskite layers enables the fabrication of efficient 2-T all-perovskite solar cells with power conversion efficiencies of more than 21% and decent stability. Our approach provides a suitable pathway to realize ultra-high efficiency 2-T all-perovskite tandem solar cells.
The 'Framing' (local discoloration along cell edges) was induced by a simple sequential accelerated stress test (consisting of hygrothermal- and UV-stressors) applied to the PV modules with high OTR (oxygen transmission rate) backsheet, irrespective of the inclusion of UV-absorber in poly(ethylene-co-vinyl acetate) (EVA) encapsulant. UV-fluorescence imaging of the PV modules suggests that the spatially-inhomogeneous degradation of EVA material under UV-irradiating conditions is correlated to this 'Framing' indicating an underlying common mechanism. These findings would contribute to the development of test procedures to broadly mimic the actual failures observed in fielded PV.
Cracks in crystalline silicon solar cells can lead to substantial power loss. While the cells' metal contacts can initially bridge these cracks and maintain electrical connections, the bridges are damaged by mechanical loads, including those due to temperature changes. We investigated the metallization bridges that form over cracks in encapsulated silicon solar cells. Microscopic characterization showed that the crack in the silicon can immediately propagate through the metal grid, but the grid can maintain electrical contact once the load is removed. We also quantified the movement of the cell fragments separated by a crack as a function of temperature. Cell fragments are free to move diagonally and to rotate, so the change in gap across the crack during a temperature change varies along the length of the crack. In one sample, we showed that a 10 degrees C temperature change, causing a 2 um increase in the separation of cell fragments, was sufficient to cause a reversible electrical disconnection of metallization bridging a crack.