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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

The Cascade Effectiveness of 3-Terminal Tandem Photocathode Architectures as Applied to CO 2 Reduction

Cascade catalysis for photoelectrochemical CO 2 reduction (CO 2 R) decouples the overall reaction into sequential steps occurring on separately optimized catalysts (for example, Ag and Cu) between which an intermediate species such as CO is transferred. A 3-terminal tandem (3TT) photovoltaic architecture advantageously holds two different catalytic regions at different potentials under a single illumination source, but its overall efficiency is low. Using a stochastic reaction-diffusion model, we have examined 3TT photocathode design principles, focusing on the coupling of surface chemistry and transport of CO both inside the boundary layer and outward, into the bulk electrolyte. We find that ensuring that the lateral diffusion distance within the boundary layer is short compared to the boundary layer thickness and controlling bulk flow are key, with interdigitated designs showing an overall conversion efficiency improvement by 2 orders of magnitude compared to the side-by-side case without flow. These findings can be adapted for other cascaded architectures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Codesign of an integrated metal–insulator–semiconductor photocathode for photoelectrochemical reduction of CO 2 to ethylene

Photoelectrochemical carbon-dioxide reduction (PEC CO 2 R) is a potentially attractive means for producing chemicals and fuels using sunlight, water, and carbon dioxide; however, this technology is in its infancy. To date, most studies of PEC CO 2 R have reported products containing one carbon atom (C 1 products) but the production of valuable products containing two or more carbons (C 2+ products), such as ethylene, ethanol, etc., is rarely demonstrated. Metal–semiconductor–insulator (MIS) photocathode/catalyst structures offer a promising approach for this purpose, since they integrate the functions of light absorption, charge separation, and catalysis. In this study, we have investigated a Cu/TiO 2 /p-Si photocathode/catalyst structure with the aim of establishing the effects of semiconductor–insulator interactions on the performance of the photocathode and the influence of the direction of illumination of the MIS structure on the total current density and the distribution of products formed by on the Cu catalyst. Here, we have also examined the influence of ionomer coatings deposited on the Cu surface on the total current density and the distribution of products formed. A major finding is that for a fixed Cu potential the distribution of products formed by PEC CO 2 R are the same, irrespective of the direction of illumination, and are identical to those obtained by electrochemical reduction of CO 2 (EC CO 2 R). Another important finding is that the total current density and the faradaic efficiency to ethylene are enhanced significantly by deposition of a thin bilayer of Sustainion/Nafion onto the surface of the Cu.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Power conversion in SnS photocathodes made by electrochemical growth is limited by recombination at (002) buried facets

Herzenbergite α-SnS is a promising p-type semiconductor for photovoltaic and solar fuel applications, but current devices are plagued by substantial photovoltage losses. Here we use vibrating Kelvin probe surface photovoltage for the first time to study the recombination losses in microcrystalline SnS photoelectrodes. α-SnS films of varied crystal orientation, size, and shape are obtained by electrochemical growth from aqueous tin( II ) chloride and sodium thiosulfate solutions near room temperature. After application of a CdS passivation layer, the films function as photocathodes for the methylviologen reduction reaction. Photoelectrochemical and surface photovoltage measurements reveal that the performance of these devices is sensitively controlled by mainly the SnS crystal orientation and to a lesser extent by the grain size. For example, the highest charge recombination rates of 8.97 × 10 14 s −1 cm −2 and lowest photocurrent (0.73 mA cm −2 ) and lowest photovoltage (0.12 V) occur for SnS films containing 500 nm crystals with irregular shapes and SnS lattices tilted away from the (001) orientation. On the other hand, the best performance (1.62 mA cm −2 , 0.16 V, 3.32 × 10 12 s −1 cm −2 ) is seen for 1100 nm fully (001) oriented SnS nanoplates. Furthermore, these findings agree with improved charge carrier mobility in the 001 direction and they also show that charge recombination in SnS films occurs mainly at dangling Sn–S bonds at buried (002) facets. Such buried interfaces need to be suppressed for optimized solar energy conversion with SnS.

Najaf, Zainab [University of California, Davis, CA↗
DOE OSTI2026

Photovoltage behaviour of p-Sb 2 S 3 photocathodes for hydrogen evolution: effect of n-In 2 S 3 passivation layers

The 1.76 eV band gap of antimony(iii) sulphide (Sb 2 S 3 ) makes this semiconductor material a promising light absorber for photoelectrochemical water splitting, but scalable fabrication approaches to efficient devices are still lacking. Here we show that compact Sb 2 S 3 films on FTO can be obtained by electrochemical growth from aqueous colloidal sulphur and antimony trichloride solutions, followed by mild annealing. These films can be converted into hydrogen evolution photocathodes after coating with In 2 S 3 passivation layers and the addition of Pt proton reduction co-catalysts. For the first time, vibrating Kelvin probe surface photovoltage (VKP-SPV) spectroscopy is used to observe the carrier dynamics in such photoelectrodes. While the bare Sb 2 S 3 films suffer from high surface recombination rates and poor electron extraction, the In 2 S 3 overlayer is found to raise the photovoltage and cathodic photocurrent density, due to passivation of surface defects and formation of a p–n heterojunction. In thick In 2 S 3 films, these benefits are offset by shading and slow electron transfer. Also, we find that O 2 strongly affects the band bending in the Sb 2 S 3 –air and In 2 S 3 –air junctions and their photovoltage. The optimised devices evolve H 2 at 77.5% Faradaic efficiency and with 0.084% applied bias photon-to-current efficiency (ABPE) at 0.12 V vs. RHE. The low ABPE value is attributed to Sb 2 S 3 sub-bandgap defects visible in SPV spectra, the random orientation of Sb 2 S 3 crystallites in the films, which inhibits charge transport, the absence of crystal facets of Sb 2 S 3 , and a detrimental Schottky junction at the FTO|Sb 2 S 3 interface.

de Araújo, Moisés A. [University of California, Da↗
DOE OSTI2022

A kiloelectron-volt ultrafast electron micro-diffraction apparatus using low emittance semiconductor photocathodes

We report the design and performance of a time-resolved electron diffraction apparatus capable of producing intense bunches with simultaneously single digit micrometer probe size, long coherence length, and 200 fs rms time resolution. We measure the 5d (peak) beam brightness at the sample location in micro-diffraction mode to be 7×1013 A/m2 rad2. To generate high brightness electron bunches, the system employs high efficiency, low emittance semiconductor photocathodes driven with a wavelength near the photoemission threshold at a repetition rate up to 250 kHz. We characterize spatial, temporal, and reciprocal space resolution of the apparatus. We perform proof-of-principle measurements of ultrafast heating in single crystal Au samples and compare experimental results with simulations that account for the effects of multiple scattering.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Photoemission characterization of N-polar III-nitride photocathodes as candidate bright electron beam sources for accelerator applications

We report on the growth and characterization of a new class of photocathode structures for use as electron sources to produce high brightness electron beams for accelerator applications. The sources are realized using III-nitride materials and are designed to leverage the strong polarization field, which is characteristic of this class of materials when grown in their wurtzite crystal structure, to produce a negative electron affinity condition without the use of Cs, possibly allowing these materials to be operated in radio frequency guns. A Quantum Efficiency (QE) of about 1×10−3 and an emitted electrons’ Mean Transverse Energy (MTE) of about 100 meV are measured at a wavelength of 265 nm. In a vacuum level of 3×10−10 Torr, the QE does not decrease after more than 24 h of continuous operation. The lowest MTE of about 50 meV is measured at 300 nm along with a QE of 1.5×10−5. Surface characterizations reveal a possible contribution to the MTE from surface morphology, calling for more detailed studies.

Cultrera, L. (ORCID:0000000235606059)↗
DOE OSTI2026

Intrinsic emittance properties of an Fe-doped β-Ga 2 O 3 (010) photocathode: Ultracold electron emission at 300 K and the polaron self-energy

Measurements of the spectral emission properties of an iron-doped a β-Ga 2 O 3 (010) photocathode at 300 K reveal the presence of an ultracold contribution to the total electron beam emission with a 6 meV mean transverse energy (MTE) in the 3.5–4.4 eV photon energy range (282–354 nm). This extreme sub-thermal photoemission signal is consistent with direct emission of electrons photoexcited from the Fe dopant states into the low effective mass and positive electron affinity primary conduction band, and it is superimposed on a stronger signal with a larger MTE associated with an (optical)phonon-mediated momentum-resonant Franck–Condon (FC) emission process from a thermally populated and negative electron affinity upper conduction band. For photon energies above 4.5 eV, a transition from a long to a short transport regime is forced by an absorption depth reduction to below 100 nm and both MTE signals exhibit spectral trends consistent with phonon-mediated FC emission if the polaron formation self-energy is included in the temperature of the initial thermalized photoexcited electron distribution.

Angeloni, Louis A. [University of Illinois, Chicag↗
DOE OSTI2026

Enhanced quantum efficiency from optical interference in alkali antimonide photocathodes: Modeling and experimental results

We present measurements of enhanced quantum efficiency (QE) in thin film alkali antimonide photocathodes from optical interference in the cathode-substrate multilayer. Modulations in the spectral response are observed over a range of visible wavelengths and are shown to increase the QE by more than a factor of two at specific wavelengths. We present a model describing the QE modulations based on the three step photoemission process incorporating cases of both constant density of states and density functional theory-derived density of states and show that the calculated results are in good agreement with the measurements. Model predictions demonstrate that QE can be enhanced by more than a factor of 5 by optimization of cathode and substrate layer thicknesses. Additionally, these calculations reveal that optical interference can yield higher quantum efficiencies in thin films compared to thick, optically dense films. We model the QE vs excitation wavelength of multiple alkali antimonide compounds at different thicknesses. We then discuss the advantages of this interference effect for electron accelerators.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the range of hundreds of MHz. Here, in this study, we report on our first design and operational results on a Hybrid Photon Detector (HPD) that combines the high quantum efficiency of a Gallium Nitride (GaN) photocathode and the low noise characteristics of a Si-based Low-Gain Avalanche Diode (LGAD). This hybrid detection scheme has the potential to reach single-photon detection sensitivity with high quantum efficiency, low noise levels and capable of operating at hundreds of MHz repetition rates.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Two-color x-ray free-electron laser by photocathode laser emittance spoiler

Multispectral x-ray pump-probe experiments call for synchronized two-color free-electron lasers (FEL). This mode often implies a laborious setup or an inefficient use of the undulator. We report on a simple and noninvasive approach tested at SwissFEL for a two-color x-ray delivering almost 60% of the pulse energy compared with a single color. In this new method, a ps UV pulse is overlapped to the photocathode drive laser increasing the beam emittance, which locally inhibits the FEL process. This scheme permits high-stability in energy and spectrum and the control of the two-color duration and intensity ratio. It enables shot-to-shot switching between one and two-color FEL and, since not associate to beam losses, it is compatible with high repetition-rate and high average-power FELs.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

High-efficiency, single-stage tunable optical parametric amplifier for visible photocathode applications

In this work we present a single-stage optical parametric amplifier (OPA) with an average conversion efficiency up to 38%, tunable between 1.01 and 1.18 µm. The OPA seed is produced by a gain-managed nonlinear fiber amplifier. Numerical modeling of the seed pulse generation shows a linear chirp, a smoothly broadened redshifted spectrum, and a high spectral energy density. When up-converted to the visible through second-harmonic generation, the signal pulses are suitable for visible photocathode excitation.

14 SOLAR ENERGY↗
DOE OSTI2025

High polarization InAlGaAs/AlGaAs photocathodes grown using MBE

Strained superlattices of GaAs/GaAsP grown using molecular beam epitaxy (MBE) have been used for more than 20 years to generate high polarization electron beams for nuclear physics. GaAs/GaAsP superlattices have several manufacturing challenges, including the thick graded layer required for the virtual GaAsP substrate, the significant difference in optimal growth temperatures for GaAs and GaAsP, and the scarcity of MBE systems using phosphorus. InAlGaAs/AlGaAs strained superlattice photocathode are an alternative structure that eliminates many of hurdles to growing GaAs/GaAsP in MBE systems. Measurements of quantum efficiency and polarization from InAlGaAs/AlGaAs will be presented. These include studies on a variety of growth parameters to optimize performance, including digital alloys, growth temperature variations, and variation in structure.

Stutzman, Marcy L↗
DOE OSTI2021

Ultraviolet (UV) light emitting device (LED) driven photocathode

An apparatus includes an electromechanical x-ray generator (MEXRAY) configured to charged capacitors using a small, high-voltage direct current. The apparatus also includes an ultraviolet (UV) light emitting diode (LED) driven photocathode device configured to control/modulate an electron dose rate of the MEXRAY or other vacuum DC, source.

Watson, Scott Avery↗
DOE OSTI2023

Demonstration of thermal limit mean transverse energy from cesium antimonide photocathodes

The mean transverse energy (MTE) of electrons emitted from cathodes is a critical parameter that determines the brightness of electron beams for applications, such as x-ray free electron lasers, particle colliders, and ultrafast electron scattering experiments. Achieving a MTE close to the thermal limit is a key step toward realizing the full potential of electron sources in these applications. Cesium antimonide (Cs 3 Sb) is a technologically important material with a long history of use in photon detection and electron sources. The smallest MTE of electrons photoemitted from Cs 3 Sb has always been appreciably greater than the thermal limit and was attributed to surface non-uniformities. In this work, we present comprehensive measurements of the photoemission electron energy spectra (PEES), quantum efficiency, and MTE from Cs 3 Sb in a wide photoexcitation energy range from 1.5 to 2.3 eV. Our PEES measurements demonstrate a notably low photoemission threshold of around 1.5 eV, which is in contrast with the previously perceived threshold of 1.8–2.0 eV. Moreover, we show that the MTE at this threshold of 1.5 eV nearly converges to the thermal limit at 300 K. At 1.8 eV, the MTE measured is 40 meV, which is comparable to the previously reported value. Here, we conclude that this MTE value at 1.8 eV photon energy is not due to surface roughness effects as previously believed, but is a direct consequence of the excess energy.

43 PARTICLE ACCELERATORS↗