Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “interconnection application”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Reliability Assessment of Advanced Flip-clip Interconnect Electronic Package Assemblies under Extreme Cold Temperatures (-190 and -120 C)

Flip-chip interconnect electronic package boards have been assembled, underfilled, non-destructively evaluated and subsequently subjected to extreme temperature thermal cycling to assess the reliability of this advanced packaging interconnect technology for future deep space, long-term, extreme temperature missions. In this very preliminary study, the employed temperature range covers military specifications (-55 C to 100 C), extreme cold Martian (-120 C to 115 C) and asteroid Nereus (-180 C to 25 C) environments. The resistance of daisy-chained, flip-chip interconnects were measured at room temperature and at various intervals as a function of extreme temperature thermal cycling. Electrical resistance measurements are reported and the tests to date have not shown significant change in resistance as a function of extreme temperature thermal cycling. However, the change in interconnect resistance becomes more noticeable with increasing number of thermal cycles. Further research work has been carried out to understand the reliability of flip-chip interconnect packages under extreme temperature applications (-190 C to 85 C) via continuously monitoring the daisy chain resistance. Adaptation of suitable diagnostic techniques to identify the failure mechanisms is in progress. This presentation will describe the experimental test results of flip-chip testing under extreme temperatures.

thermal cycling↗
NASA NTRS2000

IsoWAN: A NASA Science and Engineering Information and Services Framework

We believe that the next evolutionary step in supporting wide-area application and services delivery to customers is a network framework that provides for collocation of applications and services at distinct sites in the network, an interconnection between these sites that is performance optimized for these applications, and value-added services for applications.

IsoWAN↗
DOE OSTI2022

Room Temperature Lasing from Semiconducting Single-Walled Carbon Nanotubes

Miniaturized near-infrared semiconductor lasers that are able to generate coherent light with low energy consumption have widespread applications in fields such as optical interconnects, neuromorphic computing, and deep-tissue optogenetics. With optical transitions at near-infrared wavelengths, diameter-tunable electronic structures, and superlative optoelectronic properties, semiconducting single-walled carbon nanotubes (SWCNTs) are promising candidates for nanolaser applications. However, despite significant efforts in this direction and recent progress toward enhancing spontaneous emission from SWCNTs through Purcell effects, SWCNT-based excitonic lasers have not yet been demonstrated. Leveraging an optimized cavity-emitter integration scheme enabled by a self-assembly process, here we couple SWCNT emission to the whispering gallery modes supported by polymer microspheres, resulting in room temperature excitonic lasing with an average lasing threshold of 4.5 kW/cm 2 . The high photostability of SWCNTs allows stable lasing for prolonged duration with minimal degradation. Finally, this experimental realization of excitonic lasing from SWCNTs, combined with their versatile electronic and optical properties that can be further controlled by chemical modification, offers far-reaching opportunities for tunable near-infrared nanolasers that are applicable for optical signal processing, in vivo biosensing, and optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Factorization Machine Learning for Disaggregation of Transmission Load Profiles with High Penetration of Behind-the-Meter Solar

The ever-growing high penetration of ubiquitously distributed energy resources, especially behind-the-meter solar (BTM) generations, has significant impacts on nodal load (i.e., net injection) profiles and consequently caused imperative operational challenges to system operators such as regional transmission organizations (RTOs). Illustrated by real-world nodal data and examples at PJM Interconnection, this paper first discusses the application and necessity of effectively extracting daily nodal load profiles in a non-intrusive manner. More importantly, a novel bi-level architecture, including Factorization Machines (FM) learning procedure has been proposed to effectively disaggregate not only one node but every node in an RTO service territory. Specifically, FM leaning is adopted to capture the interconnections between related features to better utilize the correlation between buses in the same region and between a single bus and the zonal load. The proposed bi-level technique is numerically validated using real-world, minute-level, normalized, and anonymized nodal data at PJM service territory.

behind the meter solar, load disaggregation, load ↗
NASA NTRS1995

InP tunnel junction for InGaAs/InP tandem solar cells

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

Vilela, M. F.↗
NASA NTRS1992

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

Packaging schemes were developed that provide low-loss, hermetic enclosure for advanced monolithic microwave and millimeter-wave integrated circuits (MMICs). The package designs are based on a fused quartz substrate material that offers improved radio frequency (RF) performance through 44 gigahertz (GHz). The small size and weight of the packages make them appropriate for a variety of applications, including phased array antenna systems. Packages were designed in two forms; one for housing a single MMIC chip, the second in the form of a multi-chip phased array module. The single chip array module was developed in three separate sizes, for chips of different geometry and frequency requirements. The phased array module was developed to address packaging directly for antenna applications, and includes transmission line and interconnect structures to support multi-element operation. All packages are fabricated using fused quartz substrate materials. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices. The package and test fixture designs were both developed in a generic sense, optimizing performance for a wide range of possible applications and devices.

Shalkhauser, K. A.↗
DOE OSTI2020

Platinum nanometal interconnection of copper–carbon nanotube hybrid electrical conductors

This study demonstrates the versatility of Joule heating driven chemical vapor deposition to deposit nanometal interconnections into porous CNT roving with application in the production of high electrical conductivity copper-carbon nanotube (Cu-CNT) hybrids. Modifications of vapor deposition parameters allow for deposited nanometal masses from less than 5% w/w to over 85% w/w and distributions that can be controlled towards either hot-spot site-specificity or overall uniformity. Here, depositions of copper, platinum, nickel, palladium, ruthenium, rhodium, and iridium are demonstrated from acetylacetonate precursors. In particular, platinum acetylacetonate [Pt(acac) 2 ] deposits nanometal seeds that adhere tightly to the CNT roving, producing improvements in resistance and specific conductivity. The properties of the platinum deposition compared to the copper deposition motivate an investigation into its use as an interfacial layer for Cu-CNT hybrids. CNT conductors with ~30% w/w platinum are electroplated with copper, densified, and annealed to produce Cu-CNT hybrid conductors with specific conductivities as high as 5772 S m 2 /kg and TCR (from 300 to 600 K) as low as 3.12 × 10 –3 K –1 , indicating good interconnection of the metal and CNT portions. Room temperature conductivities of 29.8 MS/m are achieved, comparable to metallic conductors. Thus, Pt(acac) 2 seeded Cu-CNT hybrids offer abundant promise in high conductivity applications.

42 ENGINEERING↗
DOE OSTI2021

A Polymer-Assisted Spinodal Decomposition Strategy toward Interconnected Porous Sodium Super Ionic Conductor-Structured Polyanion-Type Materials and Their Application as a High-Power Sodium-Ion Battery Cathode

A general polymer-assisted spinodal decomposition strategy is used to prepare hierarchically porous sodium super ionic conductor (NASICON)-structured polyanion-type materials (e.g., Na 3 V 2 (PO 4 ) 3 , Li 3 V 2 (PO 4 ) 3 , K 3 V 2 (PO 4 ) 3 , Na 4 MnV(PO 4 ) 3 , and Na 2 TiV(PO 4 ) 3 ) in a tetrahydrofuran/ethanol/H 2 O synthesis system. Depending on the boiling point of solvents, the selective evaporation of the solvents induces both macrophase separation via spinodal decomposition and mesophase separation via self-assembly of inorganic precursors and amphiphilic block copolymers, leading to the formation of hierarchically porous structures. We find that the resulting hierarchically porous Na 3 V 2 (PO 4 ) 3 possessing large specific surface area (≈77 m 2 g -1 ) and pore volume (≈0.272 cm 3 g -1 ) shows a high specific capacity of 117.6 mAh g -1 at 0.1 C achieving the theoretical value and a long cycling life with 77% capacity retention over 1000 cycles at 5 C. This method presented here can open a facile avenue to synthesize other hierarchically porous polyanion-type materials.

36 MATERIALS SCIENCE↗
NASA NTRS1970

Applications of gap welding

Gap welding of electronic interconnections yields high strength joints, is easy to use, and allows visual inspection of the welding process. It is easily adaptable to automated circuit assembly.

Adams, G. D.↗
NASA NTRS1999

Nanoporous Silica Thermal Insulation for Space Shuttle Cryogenic Tanks: A Case Study

Nanoporous silica (with typical 10-50 nm porous radii) has been benchmarked for thermal insulators capable of maintaining a 150 K/cm temperature gradient. For cryogenic use in aerospace applications, the combined features for low-density, high thermal insulation factors, and low temperature compatibility are demonstrated in a prototype sandwich structure between two propulsion tanks. Theoretical modelling based on a nanoscale fractal structure suggest that the thermal conductivity scales proportionally (exponent, 1.7) with the material density-lower density increases the thermal insulation rating. Computer simulations, however, support the optimization tradeoff between material strength (Young moduli, proportional to density with exponent, 3.7), the characteristic (colloidal silica, less than 5 nm) particle size, and the thermal rating. The results of these simulations indicate that as nanosized particles are incorporated into the silica backbone, the resulting physical properties will be tailored by the smallest characteristic length and their fractal interconnections (dimension and fractal size). The application specifies a prototype panel which takes advantage of the processing flexibility inherent in sol-gel chemistry.

Noever, David A.↗
NASA NTRS1997

Novel Highly Parallel and Systolic Architectures Using Quantum Dot-Based Hardware

VLSI technology has made possible the integration of massive number of components (processors, memory, etc.) into a single chip. In VLSI design, memory and processing power are relatively cheap and the main emphasis of the design is on reducing the overall interconnection complexity since data routing costs dominate the power, time, and area required to implement a computation. Communication is costly because wires occupy the most space on a circuit and it can also degrade clock time. In fact, much of the complexity (and hence the cost) of VLSI design results from minimization of data routing. The main difficulty in VLSI routing is due to the fact that crossing of the lines carrying data, instruction, control, etc. is not possible in a plane. Thus, in order to meet this constraint, the VLSI design aims at keeping the architecture highly regular with local and short interconnection. As a result, while the high level of integration has opened the way for massively parallel computation, practical and full exploitation of such a capability in many applications of interest has been hindered by the constraints on interconnection pattern. More precisely. the use of only localized communication significantly simplifies the design of interconnection architecture but at the expense of somewhat restricted class of applications. For example, there are currently commercially available products integrating; hundreds of simple processor elements within a single chip. However, the lack of adequate interconnection pattern among these processing elements make them inefficient for exploiting a large degree of parallelism in many applications.

Fijany, Amir↗
DOE OSTI2024

Robustness and printed sensor qualification

A limiting factor of additive manufactured (AM) sensors for in-pile applications is the development of appropriate interconnection and packaging strategies that can maintain reliable performance in extreme environments. Failure mechanisms in these harsh conditions could include, but not limited to, materials interaction (i.e., intermetallic formation) and coefficient of thermal expansion (CTE) mismatch between the individual components of the sensors. To mitigate premature failure and enable the successful sustained operation of AM sensors, non-destructive qualification tests are used as an intermediate process control step used for verifying robustness and reliability of the sensor before they are deployed. A materials system of interest is the use of barium strontium titanium oxide (BST) films on stainless steel 316L (SS316L) substrate. Due to BST’s high dielectric constant and tunable dielectric properties, there is an interest for its application as an insulation/encapsulation layer for capacitive strain gauges when printed on structural materials. Previous work on the BST/SS316L material system, however, showed that the BST cracks when exposed to temperatures up to 600 °C due to CTE mismatch between the printed BST film and the metallic substrate. When comparing different fabrication techniques, less surface cracking was observed in the samples that deposited thinner (i.e., 2-20 μm) than samples that were thicker (i.e., 135 µm – 300 µm). The objective of this report is to establish a qualification process that will determine and address any challenges (i.e., mechanical failure of thick prints) of the AM sensor prior to its application in experimental tests. To demonstrate the qualification process in this report, laser spallation and uniaxial tensile tests using dynamic and quasi-static loading, respectively, will be discussed.

36 - MATERIALS SCIENCE↗
NASA NTRS1971

Ceramic wiring board increases packaging density of electronic modules

Ceramic multilayer wiring board interconnects large scale integration /LSI/ modules which dissipate nearly 2W/cc. Extremely high packaging density is possible by application of alumina cover hermetically sealed to board. Signal interconnections are completely dependent on transfer heat between layers.

Hamley, L. D.↗
NASA NTRS2003

Using SPEEDES to simulate the blue gene interconnect network

JPL and the Center for Advanced Computer Architecture (CACR) is conducting application and simulation analyses of BG/L in order to establish a range of effectiveness for the Blue Gene/L MPP architecture in performing important classes of computations and to determine the design sensitivity of the global interconnect network in support of real world ASCI application execution.

SPEEDES BlueGene/L BG/L system-on-a-chip↗
NASA NTRS1979

High temperature - low mass solar blanket

Interconnect materials and designs for use with ultrathin silicon solar cells are discussed, as well as the results of an investigation of the applicability of parallel-gap resistance welding for interconnecting these cells. Data relating contact pull strength and cell electrical degradation to variations in welding parameters such as time, voltage and pressure are presented. Methods for bonding ultrathin cells to flexible substances and for bonding thin (75 micrometers) covers to these cells are described. Also, factors influencing fabrication yield and approaches for increasing yield are discussed. The results of vacuum thermal cycling and thermal soak tests on prototype ultrathin cell test coupons and one solar module blanket are presented.

Mesch, H. G.↗
DOE OSTI2024

Engineering Anomalously Large Electron Transport in Topological Semimetals

Abstract Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single‐particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon‐electron dominating over phonon–phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas ‐ van Alphen (dHvA), electron transport, Raman scattering, and first‐principles calculations in the topological semimetals MX 2 (M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first‐principles calculations establish phonon–electron dominated scattering only in the MGe 2 compounds. Thus, this study proves that phonon‐drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Holistic Microstructure Control Strategies in Photopolymerization‐Induced Phase Separation of Acrylate Systems

Open porous materials, known for their large surface area and interconnected structures, are essential in various applications, including batteries, ion exchange, catalysis, filtration, and electronic waste recycling. A critical aspect of the functionality of porous membranes is the precise control of pore size and morphology. Photopolymerization-induced phase separation (photo-PIPS) offers a convenient and versatile methods for creating porous structures. However, controlling the porous morphology remains challenging due to the complex interplay between thermodynamics, polymerization kinetics, and monomer structures, which makes it difficult to establish the relationship between processing conditions and resulting morphology in photo-PIPS. Herein, a physics-based phase-field model capable of generating and characterizing the microstructures of porous materials based on both average and localized features is developed. Using the phase-field simulations as test bed, the effects of polarity, light intensity, and curing temperature, as well as the previously unexplored roles of chain transfer agents and substrates, on the morphology of the resulting porous microstructure are investigated. Experiments are performed to verify the results predicted by the simulations. This work lays out a comprehensive guide for designing PIPS-derived porous microstructures and offers practical engineering strategies for tailoring microstructure-level topology and size of pores for application-specific needs.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Multiscale study of helium diffusion in Ni-Cr alloys: Short-range trapping versus long-range channeling

Ni-Cr alloys are widely employed as structural materials in fast nuclear reactors but are vulnerable to high-temperature helium (He) embrittlement (HTHE) under fast neutron irradiation. A comprehensive understanding of He diffusion in Ni-Cr alloys, which governs the kinetics of HTHE, is therefore essential for developing resilient materials and preventing failure. In this work, we reveal the underlying mechanisms of He diffusion in pure Ni and Ni-Cr alloys by integrating density functional theory (DFT) with atomic kinetic Monte Carlo (AKMC) simulations. Our findings uncover a non-monotonic dependence of He diffusivity on Cr concentration, contradicting the monotonic trends predicted by DFT-parameterized theories. At low Cr concentrations, He diffusion is dominated by short-range trapping, characterized by multiple trapping sites and a distinct mechanism within the first nearest neighbor of Cr, differing from that in pure Ni. At high Cr concentrations, these local traps become interconnected, forming long-range fast diffusion channels that enhance He mobility. The competition between localized trapping and extended channeling results in a diffusivity that first decreases, then increases with rising Cr content. These atomic-scale insights offer critical guidance for the design of radiation-tolerant Ni-based alloys. Moreover, the combined DFT-AKMC methodology and the concept of random walker diffusion through interconnected energy basins present a broadly applicable framework for studying transport phenomena in disordered systems.

36 - MATERIALS SCIENCE↗