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At least 109 records · Page 6

Efficient Probabilistic Computing with Stochastic Perovskite Nickelates

Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in electronic hardware. In this report we demonstrate intrinsic stochastic resistance switching controlled via electric fields in perovskite nickelates doped with hydrogen. The ability of hydrogen ions to reside in various metastable configurations in the lattice leads to a distribution of transport gaps. With experimentally characterized p-bits, a shared-synapse p-bit architecture demonstrates highly parallelized and energy-efficient solutions to optimization problems such as integer factorization and Boolean satisfiability. The results introduce perovskite nickelates as scalable potential candidates for probabilistic computing and showcase the potential of light-element dopants in next-generation correlated semiconductors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO 3 . By confining thin layers of BiFeO 3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

42 ENGINEERING↗

Physical Mechanisms and Electric-Bias Control of Phase Transitions in Quasi-2D Charge-Density-Wave Quantum Materials

The goals of this fundamental science project, aimed at understanding the physical mechanisms and developing methods for electric-bias control of phase transitions in quasi-2D CDW materials, have been achieved. We focused on 1T-TaS2, one of the most interesting materials of this type, and demonstrated electrical gating of the I-V characteristics and hysteresis in this material. The demonstration of electrical gating of CDW phases in quasi-2D material was performed at RT. We have conducted experiments to separate the electric-field CDW switching from Joule heating-induced switching. This was an important development for 2D CDW materials. The project has led to a better understanding of the physical mechanisms behind the phase transitions and CDW depinning in quasi-2D van der Waals materials. We established that the CDW domain depinning in 1T-TaS2 does not lead to a strong increase in the collective current and accompanying narrow-band noise. We developed a technique that utilized the low-frequency noise measurements in such materials for monitoring the CDW phase transitions. In the experiments where 1T-TaS2 flakes were used in polymeric matrices, we verified the robustness of the phase transitions between the nearly commensurate and incommensurate CDW phases.

36 MATERIALS SCIENCE↗

Energy efficient photonic memory based on electrically programmable embedded III-V/Si memristors: switches and filters

Abstract Over the past few years, extensive work on optical neural networks has been investigated in hopes of achieving orders of magnitude improvement in energy efficiency and compute density via all-optical matrix-vector multiplication. However, these solutions are limited by a lack of high-speed power power-efficient phase tuners, on-chip non-volatile memory, and a proper material platform that can heterogeneously integrate all the necessary components needed onto a single chip. We address these issues by demonstrating embedded multi-layer HfO 2 /Al 2 O 3 memristors with III-V/Si photonics which facilitate non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers, and (de-)interleaver filters. The Mach-Zehnder optical memristor exhibits non-volatile optical phase shifts > π with ~33 dB signal extinction while consuming 0 electrical power consumption. We demonstrate 6 non-volatile states each capable of 4 Gbps modulation. (De-) interleaver filters were demonstrated to exhibit memristive non-volatile passband transformation with full set/reset states. Time duration tests were performed on all devices and indicated non-volatility up to 24 hours and beyond. We demonstrate non-volatile III-V/Si optical memristors with large electric-field driven phase shifts and reconfigurable filters with true 0 static power consumption. As a result, co-integrated photonic memristors offer a pathway for in-memory optical computing and large-scale non-volatile photonic circuits.

Cheung, Stanley (ORCID:0000000248860013)↗

Operando Investigation of the Molecular Origins of Dipole Switching in P(VDF‐TrFE‐CFE) Terpolymer for Large Adiabatic Temperature Change

Abstract Relaxor ferroelectric polymers exhibiting a giant electrocaloric effect (ECE) can potentially be used to create next‐generation solid‐state coolers. Under an electric field, poly(vinylidene fluoride‐trifluoroethylene‐chlorofluoroethylene) terpolymer goes through a large dipolar entropy change producing a high adiabatic temperature change (Δ T ECE ). This work resolves the molecular origins of the large entropy change behind the electric field‐induced dipole switching. A Fourier transform infrared spectroscopy equipped with a high voltage source is used to operandoly observe the characteristic molecular vibrational modes. A short‐range trans (T) conformation of the CF 2 ‐CH 2 dyads interrupted by a gauche (G) conformation, e.g., TTTG in the terpolymer chain, undergoes a dynamic transformation that leads to a corresponding Δ T ECE whenever an electric field is applied. The molecular dynamics simulation also proves that the energy barrier that the transformation from TTTGs into a long T sequence overcomes is smaller than that for all other conformations. A mixed solvent system is used to obtain T3G‐enriched terpolymer films exhibiting a 4.02 K Δ T ECE at 60 MV m −1 and these films are employed to manufacture a 2‐layer‐cascaded cooling device that achieves a 6.7 K temperature lift, the highest reported value for a 2‐layer cascaded device made of fluoropolymers.

Zhu, Yuan↗

Thermal storage system with coupled tanks

Methods and apparatus are disclosed for high-efficiency thermal storage with a fluid-filled “battery” tank positioned within a fluid-filled “reservoir” tank. Fluid loops couple the tanks to a heat pump and a building. The heat pump can charge the battery tank or deliver thermal energy (cold or heat) to a building, using the reservoir tank or ambient air as a thermal energy source. The battery tank can discharge energy to the building jointly with the heat pump or, at periods of peak electricity usage, with the heat pump switched off. Operating modes allow significant savings in electricity usage and mitigate the “duck curve.” Low duty cycle usage of the reservoir enables efficient underground thermal storage with less digging than conventional geothermal technologies. Additional efficiency is achieved with phase change materials installed inside a tank or in a tank wall, providing temperature regulation. Control methods are disclosed.

15 GEOTHERMAL ENERGY↗

Optimal Gas-Electric Energy System Decarbonization Planning

As energy utilities implement climate change mitigation policies, system planners require strategies for achieving affordable emissions reductions. Coordinated planning of electric power and natural gas systems will allow synergistic investments to address cross-sector operational constraints, competing uses for net-zero emissions fuels, and shifts in energy demands across energy carriers. In this study, we develop a novel optimization program that finds the cost-minimizing mix of infrastructure expansion or reduction across gas and electric systems to satisfy sector-specific emissions constraints. Alongside energy supply resources, our framework allows for central-planning of end-use equipment stocks to allow switching between gas and electric appliances upon failure or premature replacement. The proposed model is used to simulate case study scenarios for a benchmark 24-pipe gas network coupled to a 24-node power system test network. We find that electrification of greater than 80% of core gas demands is a component of the least-cost solution for modeled energy systems. Despite this substitution, the gas system is maintained to service difficult-to-electrify customers and to deliver net-zero emissions gas to electricity generators in times of peak electricity demand. Restricting electrification of gas appliances increases reliance on power- to-gas technologies and increases annual costs by 15% in 2040. Neglecting constraints on pipeline blending of hydrogen can produce a misleading result that relies on hydrogen blend fractions of greater than 50%. In all cases, we find the average costs of delivered gas increase nearly 5-fold across the decarbonization transition, highlighting the importance of future work investigating cost-allocation strategies for ensuring an equitable energy transition.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗

Design of Auxiliary Circuit Elements for Achieving Zero Voltage Switching in a Wireless Power Transfer System

The auxiliary resonant commutated pole (ARCP) is being used to achieve zero voltage switching (ZVS) of power switches for improved efficiency and/or to reduce dv/dt at the switch node for better electromagnetic interference (EMI) performance and overall system reliability. This paper shows how an ARCP circuit can be used in a wireless power transfer system to achieve ZVS. Detailed analysis of ARCP circuit operation is presented to determine the requirements for achieving ZVS in the main switches of a wireless electric vehicle charging system. Based on this analysis, a design algorithm is developed to optimize the design of the ZVS assisting circuit components. The designed ARCP achieves soft switching of the MOSFETs in the primary inverter of an 85 kHz, 10 kW series-series compensated, stationary wireless power transfer system.

Saha, Tarak↗

Electric field control of chirality

Polar textures have attracted substantial attention in recent years as a promising analog to spin-based textures in ferromagnets. Here, using optical second-harmonic generation–based circular dichroism, we demonstrate deterministic and reversible control of chirality over mesoscale regions in ferroelectric vortices using an applied electric field. The microscopic origins of the chirality, the pathway during the switching, and the mechanism for electric field control are described theoretically via phase-field modeling and second-principles simulations, and experimentally by examination of the microscopic response of the vortices under an applied field. The emergence of chirality from the combination of nonchiral materials and subsequent control of the handedness with an electric field has far-reaching implications for new electronics based on chirality as a field-controllable order parameter.

36 MATERIALS SCIENCE↗

Giant Magnetoelectric Coupling and Magnetic-Field-Induced Permanent Switching in a Spin Crossover Mn(III) Complex

We investigate giant magnetoelectric coupling at a Mn 3+ spin crossover in [Mn III L]BPh 4 (L = (3,5-diBr-sal) 2 323) with a field-induced permanent switching of the structural, electric, and magnetic properties. An applied magnetic field induces a first-order phase transition from a high spin/low spin (HS-LS) ordered phase to a HS-only phase at 87.5 K that remains after the field is removed. We observe this unusual effect for DC magnetic fields as low as 8.7 T. The spin-state switching driven by the magnetic field in the bistable molecular material is accompanied by a change in electric polarization amplitude and direction due to a symmetry-breaking phase transition between polar space groups. The magnetoelectric coupling occurs due to a γη 2 coupling between the order parameter γ related to the spin-state bistability and the symmetry-breaking order parameter η responsible for the change of symmetry between polar structural phases. We also observe conductivity occurring during the spin crossover and evaluate the possibility that it results from conducting phase boundaries. We perform ab initio calculations to understand the origin of the electric polarization change as well as the conductivity during the spin crossover. Thus, in this work, we demonstrate a giant magnetoelectric effect with a field-induced electric polarization change that is 1/10 of the record for any material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.

36 MATERIALS SCIENCE↗

Resilient cooling through geothermal district energy system

Decarbonization and resilience to heat waves have recently become high priorities for building and district energy systems. Geothermal coupled district heating and cooling systems that operate a water loop near ground temperature gain increasing adoption to support decarbonization. In these systems, vapor-compression machines, distributed in the energy transfer stations, lift the temperature up or down to the needs of the particular building. In principle, these systems can provide low-power, free cooling from the geothermal bore field during heat waves when electricity is often scarce. However, the performance of such a resilience operation mode and its implication on the energy system configuration and the sizing of the bore field and HVAC equipment is not yet understood. Consequently, we are assessing their resilience, power use and design implications under a scenario of a heat wave on five working days during which chillers are switched off to reduce electrical consumption. Our analysis is based on high-fidelity, coupled dynamic models of district energy, building-side HVAC and actual control logic, with whole building energy simulation used to assess thermal conditions in a 2004 vintage multi-zone office building in Chicago, IL. The results show that relying only on waterside economizer cooling, the indoor thermal conditions can be maintained in a tolerable range for the majority of the building zones with half the electrical energy compared to standard chiller operation. Thermal comfort in the hottest zones can be further improved by oversizing the cooling coil. However, the waterside economizer has significant implications on the system configuration and sizing: The geothermal bore field needs to be sized about 30% larger than the upper limit of the range observed for conventional geothermal systems. Nevertheless, if a central chiller plant is added, the bore field can be downsized to the typical design range. The latter configuration still allows compressor-less cooling during the heat wave with peak power reduced by 60% compared to the standard design and chiller operation.

15 GEOTHERMAL ENERGY↗

Alignment of Polarization against an Electric Field in van der Waals Ferroelectrics

Polarization in ferroelectrics can be switched in the direction of an applied electric field by dipole reorientation, enabling numerous applications and fundamental phenomena. In this study, we demonstrate that, in the van der Waals (vdW) layered ferrielectric Cu In P 2 S 6 , a unique mechanism exists where polarization aligns against the direction of the applied electric field, seemingly in violation of the fundamental properties of a dipolar solid. The mechanism is the result of the electric field driving the Cu atoms unidirectionally across the vdW gaps, which is distinctively different from dipole reorientation. The crossing of Cu atoms is the fundamental process of ionic conductivity, yet it is compatible with the existence of polarization. These phenomena are confirmed by nanoscale imaging and spectroscopy of ferroelectric capacitors, coupled with dynamic density-functional-theory simulations. The symbiotic relationship of ferroelectric and ionic phenomena enables alternative approaches to control polarization and necessitates a change in perspective on nucleation, domain-wall dynamics, and other ferroelectric and electromechanical characteristics in material systems where ionic and ferroelectric phenomena manifest.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO 3 . Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The response of sub-surface domains is studied by FIB cross-sectioning, enabling imaging in the direction perpendicular to the applied electric field. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.

36 MATERIALS SCIENCE↗

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe 1–x S x ) alloys, obtained by vapor–liquid–solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe 1–x S x alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Here, our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Programmable heating and quenching for efficient thermochemical synthesis

Conventional thermochemical syntheses by continuous heating under near-equilibrium conditions face critical challenges in improving the synthesis rate, selectivity, catalyst stability and energy efficiency, owing to the lack of temporal control over the reaction temperature and time, and thus the reaction pathways. As an alternative, we present a non-equilibrium, continuous synthesis technique that uses pulsed heating and quenching (for example, 0.02 s on, 1.08 s off) using a programmable electric current to rapidly switch the reaction between high (for example, up to 2,400 K) and low temperatures. The rapid quenching ensures high selectivity and good catalyst stability, as well as lowers the average temperature to reduce the energy cost. Using CH4 pyrolysis as a model reaction, our programmable heating and quenching technique leads to high selectivity to value-added C2 products (>75% versus <35% by the conventional non-catalytic method and versus <60% by most conventional methods using optimized catalysts). Our technique can be extended to a range of thermochemical reactions, such as NH 3 synthesis, for which we achieve a stable and high synthesis rate of about 6,000 μmol g Fe –1 h –1 at ambient pressure for >100 h using a non-optimized catalyst. Furthermore, this study establishes a new model towards highly efficient non-equilibrium thermochemical synthesis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗