DOE OSTI · 1885227
Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering
Abstract
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO 3 . By confining thin layers of BiFeO 3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.
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Mundy, Julia A., Grosso, Bastien F., Heikes, Colin A., Ferenc Segedin, Dan, Wang, Zhe, Shao, Yu-Tsun, Dai, Cheng, Goodge, Berit H., Meier, Quintin N., Nelson, Christopher T., Prasad, Bhagwati, Xue, Fei, Ganschow, Steffen, Muller, David A., Kourkoutis, Lena F., Chen, Long-Qing, Ratcliff, William D., Spaldin, Nicola A., Ramesh, Ramamoorthy, Schlom, Darrell G.. 2022-02-04. Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering. https://doi.org/10.1126/sciadv.abg5860
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