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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Diode step stress testing program for JANTX1N5550

The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N937b

The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N972B

The effect was studied of power/temperature step stress when applied to the zener diode JANTX1N972B manufactured by Siemens and Motorola. The power/temperature stress tests are presented, and failure analyses are included.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N3016B

The effect of power/temperature step stress when applied to a variety the zener diode JANTX2N3016B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress program for JANTX1N4570A

The effect of power/temperature step stress when applied to a variety of semiconductor devices was evaluated. Performance of the zener diode JANTX1N4570A manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined in Table 1. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1992

Frequency multipliers for millimeter and submillimeter wavelengths

All-solid-state local oscillators in the terahertz frequency range are especially needed for space-borne radio astronomy and remote sensing of the atmosphere. Because solid-state oscillators cannot yet produce the necessary local oscillator power at submillimeter wavelengths, frequency multipliers are needed. So far, submillimeter-wave frequency multipliers are mainly based on a whisker-contacted Schottky diode as the nonlinear element. This paper discusses the multiplier theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor, the barrier-intrinsic n(+) diode, the barrier-n-n(+) diode, the quantum well diode, and the single barrier varactor are discussed, with attention also given to their potential as submillimeter frequency multipliers.

Raisanen, Antti V.↗
NASA NTRS1979

Diode step stress testing program for JANTX1N759A

The effect of power/temperature step stress when applied to a variety of voltage regulating diodes manufactured by Texas Instruments and Siemens was investigated. Test requirements are described and results are tabulated. Failure modes are discussed.

Source record↗
NASA NTRS1979

Diode step stress program for JANTX1N3893

Data for the purpose of evaluating the effect of power/temperature step stress on the diode JANTX1N3893 manufactured by Siemens and Motorola is presented. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1983

Solid State Circuits for Cryogenic Operation

Tests confirm operation of five commercial semiconductor devices at cryogenic temperatures. The five devices - one tunnel diode, one field-effect transistor, and three CMOS integrated circuits - all perform well in circuits immersed in liquid-helium bath. For some tests, bath temperature was reduced to 1,25K by pumping.

Petrac, D.↗
NASA NTRS1984

Radiation-Hardness Data For Semiconductor Devices

Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

Price, W. E.↗
NASA NTRS1997

Ion-Atom Cold Collisions and Atomic Clocks

Collisions between ultracold neutral atoms have for some time been the subject of investigation, initially with hydrogen and more recently with laser cooled alkali atoms. Advances in laser cooling and trapping of neutral atoms in a Magneto-Optic Trap (MOT) have made cold atoms available as the starting point for many laser cooled atomic physics investigations. The most spectacularly successful of these, the observation of Bose-Einstein Condensation (BEC) in a dilute ultra-cold spin polarized atomic vapor, has accelerated the study of cold collisions. Experimental and theoretical studies of BEC and the long range interaction between cold alkali atoms is at the boundary of atomic and low temperature physics. Such studies have been difficult and would not have been possible without the development and advancement of laser cooling and trapping of neutral atoms. By contrast, ion-atom interactions at low temperature, also very difficult to study prior to modern day laser cooling, have remained largely unexplored. But now, many laboratories worldwide have almost routine access to cold neutral atoms. The combined technologies of ion trapping, together with laser cooling of neutrals has made these studies experimentally feasible and several very important, novel applications might come out of such investigations . This paper is an investigation of ion-atom interactions in the cold and ultra-cold temperature regime. Some of the collisional ion-atom interactions present at room temperature are very much reduced in the low temperature regime. Reaction rates for charge transfer between unlike atoms, A + B(+) approaches A(+) + B, are expected to fall rapidly with temperature, approximately as T(sup 5/2). Thus, cold mixtures of atoms and ions are expected to coexist for very long times, unlike room temperature mixtures of the same ion-atom combination. Thus, it seems feasible to cool ions via collisions with laser cooled atoms. Many of the conventional collisional interactions, exploited as a useful tool at room temperature and higher, are greatly enhanced at low energy. For example, collisional spin transfer from one species of polarized atoms to another has long been a useful method for polarizing a sample of atoms where no other means was available. Because optical pumping cannot be used to polarize the nuclear spin of Xe-129 or He-3 (for use in nmr imaging of the lungs), the nuclear spins are polarized via collisions with an optically pumped Rb vapor in a cell containing both gases. In another case, a spin polarized thermal Cs beam was used to polarize the hyperfine states of trapped He(+)-3 ions in order to measure their hyperfine clock transition frequency. The absence of an x-ray light source to optically pump the ground state of the He(+)-3 ion necessitated this alternative state preparation. Similarly, Cd(+) and Sr(+) ions were spin-oriented via collisions in a cell with optically pumped Rb vapor. Resonant RF spin changing transitions in the ground state of the ions were detected by changes in the Rb resonance light absorption. Because cold collision spin exchange rates scale with temperature as T(sup -1/2) this technique is expected to be a far more powerful tool than the room temperature counterpart. This factor of 100 or more enhancement in spin exchange reaction rates at low temperatures is the basis for a novel trapped ion clock where laser cooled neutrals will cool, state select and monitor the ion clock transition. The advantage over conventional direct laser cooling of trapped ions is that the very expensive and cumbersome UV laser light sources, required to excite the ionic cooling transition, are effectively replaced by simple diode lasers.

Prestage, John D.↗