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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Electrical Characterization of 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA's on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 degC. In particular, these measurements provide quantitative parameter ranges for use in JFET IC design and simulation. Larger than expected parameter variations were observed both as a function of position across the wafer as well as a function of ambient testing temperature from 23 degC to 500 degC.

Microelectronics↗
NASA NTRS2016

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

Advanced ACTPol (AdvACT) is a third-generation cosmic microwave background receiver to be deployed in 2016 on the Atacama Cosmology Telescope (ACT). Spanning five frequency bands from 25 to 280 GHz and having just over 5600 transition-edge sensor (TES) bolometers, this receiver will exhibit increased sensitivity and mapping speed compared to previously fielded ACT instruments. This paper presents the fabrication processes developed by NIST to scale to large arrays of feedhorn-coupled multichroic AlMn-based TES polarimeters on 150-mm diameter wafers. In addition to describing the streamlined fabrication process which enables high yields of densely packed detectors across larger wafers, we report the details of process improvements for sensor (AlMn) and insulator (SiN(sub x)) materials and microwave structures, and the resulting performance improvements.

Atacama Cosmology Telescope(ACT)↗
DOE OSTI2024

Wafer-Scale MgB 2 Superconducting Devices

Progress in superconducting device and detector technologies over the past decade has realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin-film materials, however, have remained largely unchanged, with aluminum still being the material of choice for superconducting qubits and niobium compounds for high-frequency/high kinetic inductance devices. Magnesium diboride (MgB 2 ), known for its highest transition temperature (T c = 39 K) among metallic superconductors, is a viable material for elevated temperature and higher frequency superconducting devices moving toward THz frequencies. However, difficulty in synthesizing wafer-scale thin films has prevented implementation of MgB 2 devices into the application base of superconducting electronics. Here, we report ultrasmooth (<0.5 nm root-mean-square roughness) and uniform MgB 2 thin (<100 nm) films over 100 mm in diameter and present prototype devices fabricated with these films demonstrating key superconducting properties including an internal quality factor over 10 4 at 4.5 K and high tunable kinetic inductance in the order of tens of pH/sq in a 40 nm thick film. This advancement will enable development of elevated temperature, high-frequency superconducting quantum circuits, and devices.

Boron↗
DOE OSTI2025

Record acceleration of the two-dimensional Ising model using a high-performance wafer-scale engine

The versatility and wide-ranging applicability of the Ising model, originally introduced to study phase transitions in magnetic materials, have made it a cornerstone in statistical physics and a valuable tool for evaluating the performance of emerging computer hardware. Here, we present a novel implementation of the two-dimensional Ising model on Cerebras Wafer-Scale Engine (WSE) – a revolutionary processor that is opening new frontiers in computing. In our deployment of the checkerboard algorithm, we optimized the Ising model to take advantage of the unique WSE architecture. Specifically, we employed a compressed bit representation storing 16 spins on each int16 word, and efficiently distributed the spins over the processing units enabling seamless weak scaling and limiting communications to only immediate neighboring units. Our implementation can handle up to 754 simulations in parallel, achieving an aggregate of over 61.8 trillion flip attempts per second for Ising models with up to 200 million spins. This represents a gain of up to 148 times over previously reported single-devices with a highly optimized implementation on NVIDIA V100 and up to 88 times in productivity compared to NVIDIA H100. Our findings highlight the significant potential of the WSE in scientific computing, particularly in the field of materials modeling.

Ising model↗
DOE OSTI2024

Electric-Field-Driven Localization of Molecular Nanowires in Wafer-Scale Nanogap Electrodes

As integrated circuits continue to scale toward the atomic limit, bottom-up processes, such as epitaxial growth, have come to feature prominently in their fabrication. At the same time, chemistry has developed highly tunable molecular semiconductors that can perform the functions of ultimately scaled circuit components. Hybrid techniques that integrate programmable structures comprising molecular components into devices however are sorely lacking. Here we demonstrate a wafer-scale process that directs the localization of a conductive polymer, M w = 20 kg mol –1 polyaniline, from dilute solutions into 50 nm vertical nanogap device architectures using electric-field-driven self-assembly. The resulting metal–polymer–metal junctions were characterized by electron microscopy, Raman spectroscopy and transport measurements demonstrating that our technique is highly selective, assembling conductive polymers only in electrically activated nanogaps. Our results represent a step toward scalable hybrid nanoelectronics that seamlessly integrate established lithographic top-down fabrication with bottom-up synthesized molecular functional circuit components.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2001

A Wafer Transfer Technology for MEMS Adaptive Optics

Adaptive optics systems require the combination of several advanced technologies such as precision optics, wavefront sensors, deformable mirrors, and lasers with high-speed control systems. The deformable mirror with a continuous membrane is a key component of these systems. This paper describes a new technique for transferring an entire wafer-level silicon membrane from one substrate to another. This technology is developed for the fabrication of a compact deformable mirror with a continuous facet. A 1 (mu)m thick silicon membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers (i.e. wax, epoxy, or photoresist). Smaller or larger diameter membranes can also be transferred using this technique. The fabricated actuator membrane with an electrode gap of 1.5 (mu)m shows a vertical deflection of 0.37 (mu)m at 55 V.

Micro Electro Mechanical Systems (MEMS)↗
NASA NTRS2002

A Piezoelectric Unimorph Deformable Mirror Concept by Wafer Transfer for Ultra Large Space Telescopes

Future concepts of ultra large space telescopes include segmented silicon mirrors and inflatable polymer mirrors. Primary mirrors for these systems cannot meet optical surface figure requirements and are likely to generate over several microns of wavefront errors. In order to correct for these large wavefront errors, high stroke optical quality deformable mirrors are required. JPL has recently developed a new technology for transferring an entire wafer-level mirror membrane from one substrate to another. A thin membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers. The measured peak-to-valley surface error of a transferred and patterned membrane (1 mm x 1 mm x 0.016 mm) is only 9 nm. The mirror element actuation principle is based on a piezoelectric unimorph. A voltage applied to the piezoelectric layer induces stress in the longitudinal direction causing the film to deform and pull on the mirror connected to it. The advantage of this approach is that the small longitudinal strains obtainable from a piezoelectric material at modest voltages are thus translated into large vertical displacements. Modeling is performed for a unimorph membrane consisting of clamped rectangular membrane with a PZT layer with variable dimensions. The membrane transfer technology is combined with the piezoelectric bimorph actuator concept to constitute a compact deformable mirror device with a large stroke actuation of a continuous mirror membrane, resulting in a compact A0 systems for use in ultra large space telescopes.

continuous mirror↗
DOE OSTI2025

Spectra-Orthogonal Optical Anisotropy in Wafer-Scale Molecular Crystal Monolayers

Controlling the spectral and polarization response of two-dimensional (2D) crystals is vital for developing ultrathin platforms for compact optoelectronic devices. However, independently tuning optical anisotropy and spectral response remains challenging in conventional semiconductors due to the intertwined nature of their lattice and electronic structures. Here, we report spectra-orthogonal optical anisotropy─where polarization anisotropy is tuned independently of spectral response─in wafer-scale, one-atom-thick 2D molecular crystal (2DMC) monolayers synthesized on monolayer transition-metal dichalcogenide (TMD) crystals. Utilizing the concomitant spectral consistency and structural tunability of perylene derivatives, we demonstrate tunable optical polarization anisotropy in 2DMCs with similar spectral profiles, as confirmed by room-temperature scanning tunneling microscopy and cross-polarized reflectance microscopy. Additional angle-dependent analysis of the single-crystal and polycrystalline molecular domains reveals an epitaxial relationship between the 2DMC and TMD. In conclusion, our results establish a scalable, molecule-based 2D crystalline platform for unique and tunable functionalities unattainable in covalent 2D solids.

2D materials↗
DOE OSTI2025

Overcoming Secondary Nucleation of Misoriented Domains during Wafer-Scale Epitaxy of Single-Crystal Graphene on Ge(110)

The wafer-scale synthesis of single-crystal graphene on technologically important substrates is a major challenge inhibiting the development of next-generation devices that harness the exceptional electronic, thermal, and mechanical properties of single-crystal graphene. Here, in this work, the factors controlling the domain orientation of graphene grown epitaxially on Ge(110) are elucidated, and this insight is utilized to produce graphene with minimal polycrystallinity. In the early stages of growth, most graphene islands have unidirectionally aligned lattices. However, we discover a secondary nucleation phenomenon in which misoriented graphene domains nucleate near/from the island edges, introducing defective grain boundaries and significantly increasing polycrystallinity throughout growth. We find that secondary nucleation occurs when islands grow over Ge steps, which form because of an interplay between the island growth and Ge surface topography evolution. Strategies for suppressing secondary nucleation are developed, enabling the synthesis of graphene in which the predominant crystal orientation has high coverage >99% and low rotational spread <0.6°. This work overcomes the irreproducibility of graphene epitaxy on Ge(110) reported in the literature, providing a route toward the large-area synthesis of single-crystal graphene on technologically useful semiconductors.

chemical vapor deposition↗
DOE OSTI2025

Development of an Energy-Efficient and High-Productivity Ammonia Recovery and Removal Process Using Resin-Wafer Electrodeionization

As efforts to develop various energy resources, ammonia energy is emerging as a promising carbon-free fuel alternative. Recovering high-concentration ammonia and ammonium from wastewater potentially offers significant environmental and economic benefits. However, research on recovery technologies for industries such as semiconductors remains limited. This study develops an efficient, energy-saving ammonia recovery technology using Resin Wafer Electrodeionization (RW-EDI), specifically for the semiconductor industry. RW-EDI shows promise for recovering ammonia from high-concentration wastewater. By optimizing parameters, such as voltage and initial concentration, a balance between productivity and energy consumption is achieved. Results indicate that ammonium and fluoride ion transport kinetics are similar, with minimal competition and selectivity values between 0.95 and 1.08. As the initial ammonia/ammonium concentration increases from 500 to 8000 ppm, reaction rate constants and the overall mass transfer coefficient decrease. Increasing the voltage can enhance mass transfer and eliminate barriers. Ion transport primarily occurs in the RW solid phase, accounting for 93.89% of the total current. Additionally, RW-EDI shows superior specific energy consumption within a concentration range of 500 ppm to 8000 ppm, outperforming technologies like electrodialysis by reducing specific energy consumption from 8−15 kWh/kg-NH 4 + to 1.2−2.5 kWh/kg-NH 4 + . This study highlights RW-EDI’s potential for ammonia recovery, providing valuable insights for future applications in wastewater treatment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping

This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.

42 ENGINEERING↗
DOE OSTI2024

Optical contrast analysis of α -RuCl 3 nanoflakes on oxidized silicon wafers

α-RuCl 3 , a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl 3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl 3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl 3 nanoflakes with thicknesses below 100 nm on SiO 2 /Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl 3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of –0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl 3 thickness.

2D materials↗
DOE OSTI2026

Low power on-chip data transmission for wafer-scale monolithic active pixel sensors

Here, this paper details the implementation of the digital pulse shaping subsystem within the Backbone Transmission Line Encoding (BTLE) driver, a low-power, long-distance on-chip data transmission solution designed in a 65 nm CMOS process. Digital pulse shaping is critical for minimizing inter-symbol interference (ISI) caused by bandwidth limitations of on-chip interconnects, especially in wafer-scale monolithic active pixel sensors (MAPS). A duobinary encoder coupled with a parallelized polyphase finite impulse response (FIR) filter is used for efficient shaping of the transmitted signal spectrum. This reconfigurable architecture achieves reliable 160 Mb/s data transfer over a 10 cm on-chip link, as validated by simulations demonstrating low power consumption (FoM 37.3 fJ/bit/mm of transmission line length) and effective ISI mitigation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Wafer-scale high-k SrTiO 3 dielectrics with rational barrier-layer design for low leakage and high charge density

High-k oxides such as SrTiO 3 promise large capacitance, but their dielectric response is often limited by leakage currents due to reduced bandgaps. We show that introducing a thin barrier layer beneath SrTiO 3 is a simple and effective way to suppress leakage and increase charge density. Using hybrid molecular beam epitaxy, we grew uniform SrTiO 3 films on Nb:SrTiO 3 , CaSnO 3 /Nb:SrTiO 3 , and 2-in. SiO 2 /p-Si stacks to directly compare how different barrier layers influence device behavior. Both CaSnO 3 and SiO 2 reduce leakage, but the ultra-wide-bandgap SiO 2 layer enables much higher operating voltages, yielding charge densities exceeding 5 × 10 13 cm −2 at room temperature—more than a fivefold enhancement compared to devices without a barrier layer. This improvement comes with a predictable trade-off: the lower dielectric constant of SiO 2 reduces overall capacitance, making its thickness an important design parameter. Together, these results demonstrate that rational barrier-layer engineering—including wafer-scale integration on Si—provides a clear pathway to achieving higher charge densities in SrTiO 3 -based dielectric devices.

36 MATERIALS SCIENCE↗