Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Semiconductor compounds”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

BaCu 4/3 Si 2/3 P 2 and BaCu 2–( x + y ) Zn x Si y P 2 : Expanding the Semiconducting Landscape in the ThCr 2 Si 2 -Type Family

ThCr 2 Si 2 -type layered materials are a large family of compounds with applications ranging from thermoelectricity to magnetism, with the vast majority of the members exhibiting metallic behavior. Here, in this study, we synthesized a new group of materials with Cu-Si and Cu-Zn-Si square nets with the general formula BaCu 1.33 Si 0.67 P 2 and BaCu 2–(x+y) Zn x Si y P 2 (0 ≤ x ≤ 0.9; 0.3 ≤ y ≤ 0.7). Several synthesized compounds are charge-balanced semiconductors, which are rare in the ThCr 2 Si 2 family. All the reported compounds crystallize in the ThCr 2 Si 2 -type tetragonal I4/mmm space group, with Cu/Zn/Si jointly occupying the same 4d crystallographic site. In the Zn-free composition, BaCu 1.33 Si 0.67 P 2 , Ba, and P each occupy a single crystallographic site. The introduction of Zn results in the expansion of the unit cell and splitting the Ba atomic sites along the [001] direction. Such structural displacement of the Ba atoms was confirmed by the heat capacity measurements. Band structure and density-of-states calculations on ordered hypothetical structural models reveal either a small bandgap (∼0.2 eV) or semimetallic band structures. The compounds reported here exhibit high Seebeck coefficients and ultralow thermal conductivity, making them promising candidates for the development of thermoelectric materials.

crystal structure↗
DOE OSTI2023

Ratiometric vapor sensor

A ratiometric vapor sensor is described that includes a first sensor and a second sensor. The first sensor includes a first semiconductor component comprising a vapor-sensitive semiconducting organic compound, while the second sensor includes a second semiconductor component comprising a modified vapor-sensitive semiconducting organic compound including a modifying organic group. The ratiometric vapor sensor can be used to detect the presence of a vapor such as nitrogen dioxide, and determine the concentration of the vapor by comparing the outputs of electrodes connected to the first and second sensor.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Review of Direct Neutron Conversion and Detection Processes

Commercial and laboratory neutron detection systems use indirect neutron response of materials like pressurized helium-3 (via nuclear reaction 3He(n, p)3H) to measure and count neutrons emanating from a source. Recently a host of semiconductors, especially a ternary semiconductor of lithium indium diselenide (6LiInSe2) and a quaternary alloy of enriched lithium-6, indium, phosphorous, and selenium (6LiInP2Se6), have shown promising neutron counting possibilities by directly converting neutrons into charge-carrying elements within the body of the semiconductor. These semiconductors have high thermal neutron capture cross sections, suitable energy bandgaps (~2.0 electron volts) for room-temperature operations, and a favorable electronic band structure for efficient electron charge transport. The article examines the semiconductor properties of these compounds in terms of their neutron counting capabilities and possible ways to extract neutron energy information from them. Lithium-6 and boron-10 (with thermal neutron absorption cross sections of 938 ± 6 and 3855 ± 26 barns, respectively) produce charged particles to be measured via indirect neutron interactions. The efficiency of indirect conversion neutron detectors is limited because of the inefficiencies in conversion mechanism. In case of direct conversion, the neutrons create charged particles in a single material for neutron capture and charge collection, increasing detection efficiency. Unlike 3He proportional counters, which provide no neutron energy information, the semiconductors can be used as neutron energy spectrometer. Fully resolved neutron energy by 6LiInP2Se6 from a plutonium-beryllium source has been reported in the literature. We will discuss the influence of these multilayered semiconductors’ crystallographic structures and growth techniques on neutron energy determination.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2025

Multimodal characterization of Te inclusions in Cd 1−x Zn x Te and Cd 1−x Zn x Te 1−y Se y for gamma and X-ray detectors

While CdZnTe (CZT) and CdZnTeSe (CZTS) semiconductors have emerged as compounds for room-temperature gamma and X-ray detection materials, they continue to be constrained by the formation of Te-inclusion defects generated during the growth and post-growth phases of the material, which adversely affect the detector performance. We demonstrate the utility of multimodal microscopic imaging and analysis for the characterization of the optical and electronic properties of Te inclusions in CZT and CZTS crystals at both micron and nanometer length scales. Having first identified regions with micron-scale Te inclusions using confocal Raman microscopy techniques, optically coupled infrared scattering near-field optical microscopic mapping was performed to map the distribution of these inclusions with nanometer spatial resolution and correlate the presence of Te inclusions in the matrix with other properties. Kelvin probe force microscopy was then utilized to characterize the variations of the work function associated with the presence of Te inclusions. Here, we observe an increase of ~ 240 mV in the work function associated with Te inclusions compared to the bulk CZT/CZTS crystals. Additionally, we observe that individual bulk grains in CZT can exhibit slight potential variations. Our findings develop a portrait of the charge trapping mechanisms in CZT and CZTS that act to degrade detector performance, while the demonstration of these combined microscopy techniques provides a new analytical tool that can be utilized for further optimization of the detector performance for these semiconducting compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Sustainable lead management in halide perovskite solar cells

Despite the rapid development of perovskite solar cells (PSCs) toward commercialization, the toxic lead (Pb) ions in PSCs pose a potential threat to the environment, health and safety. Managing Pb via recycling represents a promising approach to mitigating its toxicity. However, managing Pb from commonly used organic solvents has been challenging due to the lack of suitable Pb adsorbents. Here, we report a new adsorbent for both separation and recovery of Pb from PSC pollutants. The synthesized iron-incorporated hydroxyapatite possesses a strongly negatively charged surface that improves electrostatic interaction through surface-charge delocalization, thus leading to enhanced Pb adsorption. Finally, we demonstrate the feasibility of a complete Pb management process, including the purification of Pb-containing non-aqueous solvents below 15 parts per 10 9 , a level compliant with the standards of the US Environmental Protection Agency, as well as recycling of 99.97% of Pb ions by forming lead iodide.

14 SOLAR ENERGY↗
DOE OSTI2020

In Situ Transmission Electron Microscopy Study of Conductive Filament Formation in Copper Oxides

The structural and electrical property changes of two types of copper oxides (CuO and Cu 2 O) under voltage bias are studied with in situ transmission electron microscopy (TEM). The phases of different materials are confirmed with electron diffraction. In both types of oxides, dynamic conductive path formation and dissolution are observed. The decrease in resistance of CuO film is found to be accompanied with the formation of Cu 4 O 3 phase where the electric field strength is highest. We also find that the decrease in resistivity of Cu 2 O film is more extensive and occurs in an area depending on the level of current compliance. In conclusion, the physical mechanisms responsible for the observations and their implications for the formation of conducting regions in copper oxide-based memristors are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Three-Dimensional Lead Iodide Perovskitoid Hybrids with High X-ray Photoresponse

Large organic A cations cannot stabilize the 3D perovskite AMX 3 structure because they cannot be accommodated in the cubo-octhedral cage (do not follow the Goldschmidt tolerance factor rule), and they generally template low-dimensional structures. In this paper, we report that the large dication aminomethylpyridinium (AMPY) can template novel 3D structures which resemble conventional perovskites. They have the formula (xAMPY)M 2 I 6 (x = 3 or 4, M = Sn 2+ or Pb 2+ ) which is double of the AMX3 formula. However, because of the steric requirement of the Goldschmidt tolerance factor rule, it is impossible for (xAMPY)M 2 I 6 to form proper perovskite structures. Instead, a combination of corner-sharing and edge-sharing connectivity is adopted in these compounds leading to the new 3D structures. DFT calculations reveal that the compounds are indirect band gap semiconductors with direct band gaps presenting at slightly higher energies and dispersive electronic bands. The indirect band gaps of the Sn and Pb compounds are ~1.7 and 2.0 eV, respectively, which is slightly higher than the corresponding AMI 3 3D perovskites. The Raman spectra for the compounds are diffuse, with a broad rising central peak at very low frequencies around 0 cm –1 , a feature that is characteristic of dynamical lattices, high anharmonicity, and dissipative vibrations very similar to the 3D AMX 3 perovskites. Devices of (3AMPY)Pb 2 I 6 crystals exhibit clear photoresponse under ambient light without applied bias, reflecting a high carrier mobility (μ) and long carrier lifetime (τ). The devices also exhibit sizable X-ray generated photocurrent with a high μτ product of ~1.2×10 -4 cm 2 /V and a X-ray sensitivity of 207 μC∙Gy -1 ∙cm -2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Semiconductor suitable for use in photoanode

A composition of matter includes an n-type semiconductor. At least a portion of the semiconductor has the crystal structure of the chemical compound represented by FeWO 4 . The portion of the semiconductor having the crystal structure of FeWO 4 includes iron and tungsten. A photoanode can have a light-absorbing layer that includes or consists of the semiconductor. A solar fuels generator can include the photoanode.

Gregoire, John M.↗
DOE OSTI2020

Synthesis, Crystal and Electronic Structure of Layered AM Sb Compounds ( A = Rb, Cs; M = Zn, Cd): Synthesis, Crystal and Electronic Structure of Layered AM Sb Compounds ( A = Rb, Cs; M = Zn, Cd)

Synthesis, crystal structure, thermal stability, and electronic band structure of four new metal antimonides AMSb (A = Rb, Cs; M = Zn, Cd) are reported. CsZnSb and RbZnSb crystallize in the hexagonal ZrBeSi structure type, in a P6 3 /mmc space group (no. 194, Z = 2) and unit cell dimensions of a = 4.5588(2)/4.5466(4) Å and c = 11.9246(6)/11.0999(10) Å. CsCdSb and RbCdSb crystallize in the tetragonal PbFCl structure type in a P4/nmm space group (no. 129; Z = 2) and unit cell parameters of a = 4.8884(5)/4.8227(3) Å and c = 8.8897(9)/8.5492(7) Å. All four compounds are air- and water-sensitive and are shown through DSC measurements to decompose between 975 K and 1060 K. Analysis of the calculated electronic band structure shows that the Zn-containing antimonides are topologically trivial narrow bandgap semiconductors, whereas Cd-containing compounds exhibit a band inversion along Γ-Z direction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Pressure effect on band inversion in AE Cd 2 As 2 ( AE =Ca, Sr, Ba)

Recent studies have predicted that magnetic EuCd 2 As 2 can host several different topological states depending on its magnetic order, including a single pair of Weyl points. Here we report on the bulk properties and band inversion induced by pressure in the nonmagnetic analogs AECd 2 As 2 (AE = Ca, Sr, Ba) as studied with density functional theory calculations. Under ambient pressure we find that these compounds are narrow band gap semiconductors, in agreement with experiment. In this work, the size of the band gap is dictated by both the increasing ionicity across the AE series which tends to increase the band gap, as well as the larger nearest neighbor Cd-As distance from increasing atomic size which can decrease the band gap because the conduction band edge is an antibonding state derived mostly from Cd 5s orbitals. The combination of these two competing effects results in a nonmonotonic change of the band gap size across the AE series with SrCd 2 As 2 having the smallest band gap among the three compounds. The application of negative pressure reduces this band gap and causes the band inversion between the Cd 5s and As 4p orbitals along the Γ-A direction to induce a pair of Dirac points. The topological nature of the Dirac points is then confirmed by finding the closed Fermi arcs on the ($10\bar{1}0$) surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Epitaxial Electrodeposition of Wide Bandgap Semiconductors for Energy Conversion and Storage

The focus of this project was to electrodeposit epitaxial films and nanostructures of inorganic materials. Although electrodeposition is normally associated with the electroplating of metals, the emphasis in this work was the deposition of compound materials such as metal oxides, semiconductors, catalysts, and magnetic materials. An electrochemical/chemical approach was used, in which an electrochemical redox reaction was followed by a chemical reaction to produce the product. The materials were deposited as epitaxial thin films or nanostructures onto a single-crystal substrate that determined their in-plane and out-of-plane orientation. Epitaxial films can have enhanced properties due to the lack of grain boundaries. They can also produce catalytic materials which have enhanced reactivity due to the exposure of the most catalytically active surface. A method was developed to produce inexpensive single-crystal-like metal foils that could be used as the substrate to deposit materials for applications such as flexible electronics. It was also demonstrated that epitaxial films of inorganic materials could be produced by a simple spin-coating technique.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Exploration, Prediction, and Experimental Verification of Structure and Optoelectronic Properties in I 2 -Eu-IV-X 4 (I = Li, Cu, Ag; IV = Si, Ge, Sn; X = S, Se) Chalcogenide Semiconductors

Recently, there has been extensive research into photovoltaic, thermoelectric, and nonlinear optical applications of chalcogenide semiconductors within the large set of defect-resistant I 2 -II-IV-X4 (I = Li, Cu, Ag; II = Ba, Sr, Eu, Pb; IV = Si, Ge, Sn; X = S, Se) compounds. Five Eu-including compounds have previously been reported within this family, but a comparative study of possible structures and electronic properties of all 18 Eu-based combinations is still absent. Herein, we use hybrid density functional theory to study rare-earth-including I 2 -II-IV-X 4 semiconductors with Eu on the II site, in order to further understand this family and test the geometric tolerance factor approach (reported in our previous work) as a tool for predicting potential stable structures. We investigate how the exchange mixing parameter of the HSE06 density functional, α, affects the energetic positions of electronic levels, especially of the localized f-electron orbitals near the band edges of the extended semiconductor structures, using literature photoemission and band gap data of EuS for comparison. Lowest-energy quaternary structure candidates, energy band structures, and densities of states are computationally predicted for all 18 materials. Based on its predicted photovoltaics-relevant band gap, the previously unknown compound Cu 2 EuSnSe 4 was selected and synthesized. Furthermore, the experimental structure, lattice parameters, and band gap of Cu 2 EuSnSe 4 are consistent with the computational predictions, confirming a 1.55 eV band gap.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Assessing the accuracy of compound formation energies with quantum Monte Carlo

Accurately predicting the formation energy of a compound, which describes its thermodynamic stability, is a key challenge in materials physics. Here, we employ a many-body quantum Monte Carlo (QMC) with single-reference trial functions to compute the formation energy of two electronically disparate compounds, the intermetallic VPt2 and the semiconductor CuI, for which standard density functional theory (DFT) predictions using both the Perdew-Burke-Ernzerhof (PBE) and the strongly constrained and appropriately normed (SCAN) density functional approximations deviate markedly from available experimental values. For VPt2, we find an agreement between QMC, SCAN, and PBE0 estimates, which therefore remain in disagreement with the much less exothermic experimental value. For CuI, the QMC result agrees with neither SCAN nor PBE pointing towards DFT exchange-correlation biases, likely related to the localized Cu 3d electrons. Compared to the behavior of some density functional approximations within DFT, spin-averaged QMC exhibits a smaller but still appreciable deviation when compared to experiment. The QMC result is slightly improved by incorporating spin-orbit corrections for CuI and solid I 2 , so that experiment and theory are brought into imperfect but reasonable agreement within about 120 meV/atom.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Lattice dynamics and thermoelectric properties of diamondoid materials

Abstract The diamondoid compounds are a large family of important semiconductors, which possess various unique transport properties and had been widely investigated in the fields of photoelectricity and nonlinear optics. For a significantly long period of time, diamondoid materials were not given much attention in the field of thermoelectricity. However, this changed when a series of diamondoid compounds showed a thermoelectric figure of merit ( ZT ) greater than 1.0. This discovery sparked considerable interest in further exploring the thermoelectric properties of diamondoid materials. This review aims to provide a comprehensive view of our current understanding of thermal and electronic transport in diamondoid materials and stimulate their development in thermoelectric applications. We present a collection of recent discoveries concerning the lattice dynamics and electronic structure of diamondoid materials. We review the underlying physics responsible for their unique electrical and phonon transport behaviors. Moreover, we provide insights into the advancements made in the field of thermoelectricity for diamondoid materials and the corresponding strategies employed to optimize their performance. Lastly, we emphasize the challenges that lie ahead and outline potential avenues for future research in the domain of diamondoid thermoelectric materials.

Xie, Hongyao↗
DOE OSTI2024

Giant Apparent Optical Circular Dichroism in Thin Films of Bismuth-Based Hybrid Organic-Inorganic Metal Halide Semiconductor Through Preferred Orientation

Introducing chirality into organic/inorganic hybrid materials can impart chiroptical properties such as circular dichroism. The ability to tune chiroptical properties in self-assembled materials can have important implications for spintronic and optoelectronic applications. Here, a chiral organic cation, (R/S)-4-methoxy-a-methylbenzylammonium, is incorporated to synthesize the bismuth-based hybrid organic-inorganic metal halide semiconductor, (R/S-MeOMePMA)BiI4. Thin films of this Bi-based compound demonstrate large chiroptical responses, with circular dichroism anisotropy (gCD) values up to ˜0.1, close to the highest value observed in another chiral metal-halide semiconductor, (R-MBA2CuCl4). Detailed investigation reveals that this large gCD in (R/S-MeOMePMA)BiI4 is caused by the apparent CD effect. Careful selection of deposition conditions and the concomitant thin-film orientation enables the control of gCD, with maximum value observed when its thin film has a well-crystallized preferred (001) orientation parallel to the substrate. The results support a growing body of evidence that low symmetry plays an important role in achieving unusually large gCD in these chiral metal-halide materials and provides design rules for achieving large chiroptical response via morphology control.

chiroptic response↗
DOE OSTI2020

Synthesis and structural characterization of the new Zintl phases Ba 3 Cd 2 P 4 and Ba 2 Cd 2 P 3 . Rare example of small gap semiconducting behavior with negative thermopower within the range 300 K-700 K

The new Zintl phases Ba 3 Cd 2 P 4 and Ba 2 Cd 2 P 3 have been synthesized using Pb flux, which allowed for the growth of 4-5 mm large crystals. The structures were determined utilizing single-crystal X-ray diffraction methods. Both compounds crystalize in the monoclinic crystal system (space group C2/m (No. 12)) and their structures are closely related. The structure of Ba 3 Cd 2 P 4 can be seen as being comprised of divalent Ba atoms and conjoined CdP 4 tetrahedra in the form of [Cd 2 P 4 ] 6- layers. Within the layers, homoatomic P–P bonds are present, which if cleaved, leave two infinite [CdP 3 ] 7- chains running along the crystallographic b-axis. The other structure, that of Ba 2 Cd 2 P 3 , can be rationalized as also having divalent Ba atoms and conjoined CdP4 tetrahedra in the form of [Cd 2 P 3 ] 6- layers. These layers, again, can be visualized as chains that run down the crystallographic b-axis, which are further connected by P-P dimers. Electronic band structure calculations show that each structure has an optimal number of valence electrons, and therefore conform to the Zintl-Klemm concept. Accordingly, the two compounds can be considered small band gap semiconductors, with band gaps of ca. 0.1 eV and 0.6 eV for Ba3Cd2P4 and Ba 2 Cd 2 P 3 , respectively. Electrical resistivity measurements show that Ba3Cd2P4 displays a large resistivity value at room temperature and an experimental band gap of ca. 0.05 eV, which fits reasonably well with the theoretical predictions. Thermopower measurements show that throughout the temperature range 300 K-700 K, Ba 3 Cd 2 P 4 displays a negative Seebeck coefficient. Here, the extremum value of -84 μV is reached at 630 K, suggestive of an n-type semiconductor, a rarity among Zintl phases.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗