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At least 109 records · Page 6

Physical patterning of high-Q superconducting niobium resonators via ion beam etching

The development of superconducting quantum circuits increasingly involves the exploration of chemically distinct materials and complex multilayered structures. Accelerating this trend may benefit from low-damage, materials-agnostic patterning techniques that are compatible with a broad range of materials. Here, in this work, we investigate the utility of low-energy ion beam etching (IBE), a physical patterning technique, as an alternative to reactive ion etching for fabricating low-loss superconducting resonators. We use niobium (Nb) resonators as a test platform, leveraging their well-characterized performance metrics for benchmarking. To address IBE-induced surface redeposition, we introduce an in situ aluminum capping layer combined with targeted post-fabrication chemical treatment. This strategy yields resonators with internal quality factors as high as 6 × 10 5 in the single-photon regime at 50 mK. These results establish low-energy IBE as a promising patterning technique for superconducting devices, with the potential to accelerate development across chemically diverse and multilayered material platforms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-energy ion beams generated with high efficiency using laser-driven 3D microstructures

Laser-driven ion acceleration in plasma is being proposed as a source of ion beams with a high peak current that can be useful in many fields of science and medicine. Using this method, high proton energies have been achieved by increasing the laser power and by using ultrathin (≤ 200 nm) foils. However, this approach is limited by survivability of the nanotargets to laser prepulses and by difficulty in controlling the plasma acceleration properties. Here, we introduce a new target platform using two-photon polymerization, 3D laser-printed “clone” microstructures with average densities lower than solid that are relatively insensitive to the laser prepulse. Two types of microstructured targets consisting of either a multilayered log-pile or a stochastic arrangement of one micron diameter wires are used. Both demonstrate a higher energy and higher yield proton acceleration compared to thin solid-density foil targets by the robust target normal sheath acceleration (TNSA) mechanism. We find that when such 10–20 μm thick structures are irradiated with a petawatt laser, protons with energies up to 110 MeV and a laser-to-proton conversion efficiency of ~ 10% are obtained. Our work suggests that such microstructures optimized for 60–200 MeV compact proton accelerators are promising for future radiotherapy and other applications.

Physics - Plasma physics↗

Novel Focused Ion Beam Liftouts for Spatial Characterization of Spherical Biominerals With Transmission Electron Microscopy

Abstract Focused ion beam (FIB) is frequently used to prepare electron- and X-ray-beam-transparent thin sections of samples, called lamellae. Typically, lamellae are prepared from only a subregion of a sample. In this paper, we present a novel approach for FIB lamella preparation of microscopic samples, wherein the entire cross-section of the whole sample can be investigated. The approach was demonstrated using spherical, porous, and often hollow microprecipitates of biologically precipitated calcium carbonate. The microprecipitate morphology made these biogenic samples more fragile and challenging than materials commonly investigated using FIB lamellae. Our method enables the appropriate orientation of the lamellae required for further electron/X-ray analyses after attachment to the transmission electron microscopy (TEM) grid post and facilitates more secure adhesion onto the grid post. We present evidence of autofluorescence in bacterially precipitated vaterite using this lamella preparation method coupled with TEM selected area diffraction. This innovative approach allows studying biomineralization at the micro to nano scales, which can provide novel insights into bacterial responses to microenvironmental conditions.

47 OTHER INSTRUMENTATION↗

Impacts of Focused Ion Beam Processing on the Fabrication of Nanoscale Functionalized Probes

Herein, we examine the impact of Ga + ion kinetic energy and the target material type on the extent of ion implantation and structural damage in atomic force microscopy probes made of Al 2 O 3 and ZnO manufactured by focused ion beam (FIB) using scanning transmission electron microscopy and energy-dispersive X-ray mapping. Penetration of Ga into the Al 2 O 3 lattice induced structural distortions and amorphization. For ZnO probes, Ga is uniformly dispersed across the surface, resulting in the formation of distinct clusters. Atom probe tomography further validates the Ga distributions in Al 2 O 3 and ZnO nanoprobes. Complementary Monte Carlo simulations with the transport of ions in the matter program indicated that the introduction of Ga + prompts the generation of cation and anion vacancies, an occurrence more pronounced in Al 2 O 3 compared to ZnO. In conclusion, this study not only enriches the knowledge of ion-matter interactions, but also serves as a practical guide for the fabrication of nanoscale functionalized AFM probes.

Al2O3↗

Conceptual design of a heavy ion beam probe diagnostic for the Wendelstein 7-X Stellarator

This article describes the current state of the design of the heavy ion beam probe (HIBP) for Wendelstein 7-X (W7-X). It will be the first HIBP diagnostic on an optimized stellarator and is designed to study electric fields and ion scale turbulence in all W7-X reference magnetic configurations. The use of an existing 2 MV accelerator, located outside of the torus hall, results in the need for a circuitous primary beamline. This increases the complexity of the ion optics design to deliver a focused beam to the plasma. To access most of the magnetic configuration space of W7-X, the secondary beamline and an energy analyzer are designed to pivot, thereby redirecting a wider range of secondary beam trajectories. Signal level estimates indicate that the equilibrium potential can be measured at all radii and that the radial coverage for potential and density fluctuations measurements depends on the plasma density.

47 OTHER INSTRUMENTATION↗

Ion-beam-assisted growth of cesium-antimonide photocathodes

We report on the novel use of a Cs+ ion gun for an ion-beam-assisted molecular-beam-epitaxy (IBA-MBE) method to sequentially deposit Cs-Sb cathodes on room temperature substrates as opposed to the standard technique of thermal evaporation on elevated-temperature substrates. The details of the ultrahigh-vacuum chamber, the Cs+ ion source, and the growth technique are elaborated. The final quantum efficiency (QE) is reasonably good for Cs-Sb cathodes grown on two different substrates—Si (100) and strontium titanate—and is comparable to the QE of cathodes grown using thermal sources. This suggests that IBA-MBE could be a viable alternative to grow alkali-antimonides without substrate heating, paving the way for the growth of epitaxial alkali-antimonides in a more reproducible fashion, which may help improve the efficiency of photon detectors and accelerator applications that use alkali-antimonides as electron sources.

Engineering↗

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗

Activation of CO 2 by Actinide Cations (Th + , U + , Pu + , and Am + ) as Studied by Guided Ion Beam and Triple Quadrupole Mass Spectrometry

Reactions of CO 2 with Th+ have been studied using guided ion beam tandem mass spectrometry (GIBMS) and with An + (An + = Th + , U + , Pu + , and Am + ) using triple quadrupole inductively coupled plasma mass spectrometry (QQQ-ICP-MS). Additionally, the reactions ThO + + CO and ThO + + CO 2 were examined using GIBMS. Modeling the kinetic energy dependent GIBMS data allowed determination of bond dissociation energies (BDEs) for D o (Th + -O) and D o (OTh + -O) that are in reasonable agreement with previous GIBMS measurements. The QQQ-ICP-MS reactions were studied at higher pressures where multiple collisions between An + and the neutral CO 2 occur. As a consequence, both AnO + and AnO 2 + products were observed for all An + except Am + , where only AmO + was observed. Here, the relative abundances of the observed monoxides compared to the dioxides are consistent with previous reports of the AnO n + (n = 1, 2) BDEs. Comparison of the periodic trends of the group 4 transition metal, lanthanide (Ln), and actinide atomic cations in reactions with CO 2 (a formally spin-forbidden reaction for most M + ground states), and O 2 (a spin unrestricted reaction) indicate that spin conservation plays a minor role, if any, for the heavier An + metals. Further correlation of Ln + and An + + CO 2 reaction efficiencies with the promotion energy (E p ) to the first electronic state with two valence d-electrons (E p (5d 2 ) for Ln + and E p (6d 2 ) for An + ) indicates that the primary limitation in the activation of CO 2 is the energetic cost to promote from the electronic ground state of the atomic metal ion to a reactive state.

bond activation↗

Annealing of focused ion beam damage in gold microcrystals: an in situ Bragg coherent X-ray diffraction imaging study

Focused ion beam (FIB) techniques are commonly used to machine, analyse and image materials at the micro- and nanoscale. However, FIB modifies the integrity of the sample by creating defects that cause lattice distortions. Methods have been developed to reduce FIB-induced strain; however, these protocols need to be evaluated for their effectiveness. Here, non-destructive Bragg coherent X-ray diffraction imaging is used to study the in situ annealing of FIB-milled gold microcrystals. Two non-collinear reflections are simultaneously measured for two different crystals during a single annealing cycle, demonstrating the ability to reliably track the location of multiple Bragg peaks during thermal annealing. The thermal lattice expansion of each crystal is used to calculate the local temperature. This is compared with thermocouple readings, which are shown to be substantially affected by thermal resistance. To evaluate the annealing process, each reflection is analysed by considering facet area evolution, cross-correlation maps of the displacement field and binarized morphology, and average strain plots. The crystal's strain and morphology evolve with increasing temperature, which is likely to be caused by the diffusion of gallium in gold below ~280°C and the self-diffusion of gold above ~280°C. The majority of FIB-induced strains are removed by 380–410°C, depending on which reflection is being considered. These observations highlight the importance of measuring multiple reflections to unambiguously interpret material behaviour.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Bond Energies of UO + and UC + : Guided Ion Beam and Quantum Chemical Studies of the Reactions of Uranium Cation with O 2 and CO

Here, guided ion beam tandem mass spectrometry was used to examine the kinetic energy dependent reactions of U + with O 2 and CO. In the reaction of U + with O 2 , the UO + product is formed in a barrierless and exothermic process with a reaction efficiency at low energies of k/k col =1.1±0.2, but increases at higher collision energies. Formation of both UO + and UC + in the reaction of U + with CO is endothermic. 0 K bond dissociation energies (BDEs) of D 0 (U + -O)=7.88±0.09 eV and D 0 (U + -C)=4.03±0.13 eV were determined by analyzing the kinetic energy dependent cross sections in the latter endothermic reactions. These values are within experimental uncertainty of previously reported experimental values. Additionally, the electronic states of UO + and UC + and the potential energy surfaces for the reactions were explored by quantum chemical calculations. The former include a full Feller-Peterson-Dixon composite approach with correlation contributions up to CCSDT(Q) for UO and UO + , yielding D 0 (U-O)=7.82 eV and D 0 (U + -O)=7.99 eV, as well as more approximate CCSD(T) calculations where a semi-empirical model was used to estimate spin-orbit energy contributions, which are generally found to improve the agreement with experiment. Both experimental BDEs are observed to be close to those of their transition metal congeners, ScL + , YL + , and GdL + (L=O and C).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Plasma Focused Ion Beam Nanothermometry

In this report we detail demonstration of temperature dependent effects on grayscale intensity imaged in Focused Ion Beam (FIB) microscope, as well as secondary electron (SE) dependence on temperature in the Auger Electron Spectroscopy (AES) and a Scanning Electron Microscope (SEM). In each instrument an intrinsic silicon sample is imaged at multiple temperatures over the course of each experiment. The grayscale intensity is shown to scale with sample temperature. Sample preparation procedures are discussed, along with hypothesized explanations for unsuccessful trials. Anticipated outcomes and future directions for these measurements are also detailed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Method for fabricating superconducting devices using a focused ion beam

Nano-scale junctions, wires, and junction arrays are created by using a focused high-energy ion beam to direct-write insulating or poorly conducting barriers into thin films of materials that are sensitive to disorder, including superconductors, ferromagnetic materials and semiconductors.

Cybart, Shane A.↗

Linear Theory of Electromagnetic Ion Beam Instabilities in the Earth’s Forshock: Peter Gary’s Contributions (1981–1991)

We discuss Peter Gary’s contributions to the understanding of the origin and properties of ultra-low frequency (ULF) waves in the Earth’s foreshock during the period when the International Sun Earth Explorer spacecraft (ISEE-1 and -2) provided unique data about the plasma and wave environment in this region. Peter’s work concerning the linear theory of electromagnetic ion beam instabilities is contained in five journal articles and then summarized in a review article, all of which are discussed here. Brief summaries of observations and theory prior to ISEE as well as to later work are also included.

79 ASTRONOMY AND ASTROPHYSICS↗

Ion Beam Figuring System for Synchrotron X-Ray Mirrors Achieving Sub-0.2-µrad and Sub-0.5-nm Root Mean Square

Abstract Optics with high-precision height and slope are increasingly desired in numerous industrial fields. For instance, Kirkpatrick–Baez (KB) mirrors play an important role in synchrotron X-ray applications. A KB system is composed of two aspherical, grazing-incidence mirrors used to focus an X-ray beam. The fabrication of KB mirrors is challenging due to the aspherical departure of the mirror surfaces from base geometries and the high-quality requirements for slope and height residuals. In this paper, we present the process of manufacturing an elliptical cylinder KB mirror using our in-house-developed ion beam figuring (IBF) and metrology technologies. First, the key aspects of figuring and finishing processes with IBF are illustrated in detail. The effect of positioning error on the convergence of the residual slope error is highlighted and compensated. Finally, inspection and cross-validation using different metrology instruments are performed and used as the final validation of the mirror. Results confirm that relative to the requested off-axis ellipse, the mirror has achieved 0.15-µrad root mean square (RMS) and 0.36-nm RMS residual slope and height errors, respectively, while maintaining the initial 0.3-nm RMS microroughness.

36 MATERIALS SCIENCE↗

In situ transmission electron microscopy with dual ion beam irradiation and implantation

To study the helium effects and their interactions with displacement damage in irradiated materials, an in situ dual-ion beam irradiation capability with transmission electron microscopy was recently established at the IVEM-Tandem Facility at Argonne National Laboratory. Pure nickel was irradiated in situ individually with 1 MeV Kr ions for displacement damage study, 16 keV He ions for helium implantation, and simultaneously with 1 MeV Kr ions and 16 keV He ions at the rate of 1 at.% He/dpa to study the interaction of helium and displacement damage at 500 degrees C. Helium bubbles were formed and segregated within dislocation loops during the He implantation experiment and no bubbles were observed outside the loops. The loop size increased with increasing helium concentration. In contrast, helium bubbles were formed uniformly in the matrix when nickel was irradiated simultaneously with 1 MeV Kr ions and 16 keV He ions. Overall, it is suggested that the uniformly-distributed defect clusters formed under 1 MeV Kr ion irradiation serve as trapping sites of helium atoms resulting in homogeneous nucleation of helium bubbles under the dualion beam irradiation in nickel.

36 MATERIALS SCIENCE↗

Improving the laser performance of ion beam sputtered dielectric thin films through the suppression of nanoscale defects by employing a xenon sputtering gas

Laser damage-prone precursors in high index materials such as hafnia are believed to be the primary limiter in the performance of dielectric multilayer films to advance ultra-high power and energy laser applications. Removing or suppressing these precursors is the key to fabricating laser damage resistant thin films for the enabling technologies. Early work has revealed that nanobubbles formed by entrapped argon (Ar) working gas in ion beam sputtering (IBS) produced hafnia films are primarily responsible for the onset of laser damage upon exposure to UV, ns-laser pulses. In this study, we demonstrate that the UV ns-laser damage onset of IBS produced hafnia films can be improved to 3.1 +/- 0.2 J/cm 2 by substituting the conventional Ar working gas with xenon (Xe), a nearly 1 J/cm 2 increase from that of the Ar produced hafnia films. In addition to the suppression of the overall point-defect density of the hafnia films, the reduction of the Xe entrapment eliminates the nanobubbles and the generation of plasmas that initiates the laser damage. The defect suppression and its correlation to the increase in laser damage threshold is revealed by the combined analysis of Rutherford backscattering spectroscopy, electron paramagnetic resonance spectroscopy, transmission electron microscopy, and laser damage testing. Monte Carlo simulations suggest a much smaller entrapment of Xe gas by comparison to Ar, which is attributed to the significant difference in the energy of the reflected neutrals (3X) which are likely to be implanted. These results provide an effective process route with a fundamental understanding for producing high laser damage resistant dielectric films for high power and high energy laser applications.

36 MATERIALS SCIENCE↗

Excitation of long electrostatic solitary waves in ion beam neutralization process

Unusually long electrostatic solitary waves (ESWs) are discovered in a particle-in-cell simulation study of the process of ion beam neutralization by electron emission from a filament. These ESWs are long because the density perturbation responses to the potential wells created by the ESWs are very small. Notably, the density perturbation is small because the trapped (positive) and untrapped (negative) electron density perturbations nearly compensate each other because of a non-Maxwellian electron velocity distribution in the beam.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗