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At least 109 records · Page 6

High-resolution electron microscope observation of voids in amorphous Ge.

Electron micrographs have been obtained which clearly show the existence of a void network in amorphous Ge films formed at substrate temperatures of 25 and 150 C, and the absence of a void network in films formed at higher substrate temperatures of 200 and 250 C. These results correlate quite well with density measurements and predictions of void densities by indirect methods.

Donovan, T. M.↗

Steady-state inlet temperature distortion effects on the stall limits of a J85-Ge-13 turbojet engine

The effects of circumferential and radial temperature distortions and combined temperature and pressure distortion on the performance of a J85-GE-13 turbojet engine were investigated. In terms of loss of compressor pressure ratio at stall, the most severe pattern of temperature distortion was hub radial while a circumferential pattern of diametrically opposed sectors was least severe. The effect of combined temperature and pressure distortion was dependent on the location of the high temperature and low pressure regions. The most serious stall pressure ratio losses occurred when these regions coincided.

Mehalic, C. M.↗

Thermoelectric properties of 80 a/o Si-20 a/o Ge alloy

This paper discusses the time and temperature dependence of the thermoelectric properties of n- and p-type 80 at. % Si-20 at. % Ge alloy. It is shown that the time-temperature behavior of the properties of both polarity types of this alloy can be described by means of a diffusion-limited dopant precipitation model due to Lifshitz and Slyozov (1961). An experimental program for the determination of the long-term behavior of the properties of the alloy is described in terms of the Lifshitz-Slyozov model, and the thermoelectric properties of the alloy are given for temperatures in the range from room temperature to 1000 C as a function of time up to and including twelve years. The data given for the p-type alloy represent the first time-dependent thermoelectric property data ever published for the p-type silicon-germanium alloys.

Raag, V.↗

Proton and deuteron double differential cross sections at angles from 10 deg to 60 deg from Be, C, Al, Fe, Cu, Ge, W, and Pb under 558-MeV-proton irradiation

The double differential cross sections for the production of protons and deuterons from targets of Be, C, Al, Fe, Cu, Ge, W, and Pb were obtained at laboratory angles of scatter of 10, 20, 30, 40, 50, and 60 degrees for 558-MeV incident protons. The position of the quasi-elastic peak, discernible in the cross sections up to approximately 40 degrees, corresponded closely to the theoretical predictions for proton-proton elastic scattering at 558 MeV. The mean ratio of deuteron to proton energy-integrated cross sections was 0.056 + or - 0.008. The dependence of energy-integrated cross sections for both protons and deuterons on target mass number A varied from A to the 1/3 power at 10 degrees to A to the 2/3 power above approximately 30 degrees. The ratio of energy-integrated deuteron cross sections for quasielastic processes to that for reactions yielding a deuteron-pi-meson pair was approximately 10 percent.

Beck, S. M.↗

Explanation for the very low Ga and Ge concentrations in some iron meteorite groups

Parallels between the abundance patterns of moderately volatile elements in iron meteorites and ordinary chondrites are pointed out and discussed in relation to condensation processes in the solar nebula. The discussion is centered around a graph in which As, Cu, Ga, Ge to Ni ratios, normalized to CI chondrites, are compared for IVB, IVA, IVB, and IIIAB irons and H-group ordinary chondrites. The patterns suggest that the same volatile loss mechanism was at work for both IVB irons and ordinary chondrites, but was more efficient in the IVB process. A picture for the process at the IVB location is proposed, according to which condensation occurred when temperature decreased rapidly and trace metals condensed as a fine aerosol that was later blown away by a T-Tauri solar storm. Condensation at the H-group location was more complete because of a less rapid temperature decrease, allowing trace metals to diffuse deeper into Fe-Ni grains. Possible ways in which IVA conditions may have differed from IIIAB or H conditions are also proposed and discussed.

Wasson, J. T.↗

Background of a shielded Ge(Li) spectrometer at balloon altitudes

The background data obtained from an actively shielded Ge(Li) spectrometer flown on a balloon were analyzed and a preliminary model was developed to explain background features including the intensity and time profile of line emission. These features can be explained by a combination of secondary radiation originating in the CsI shield and atmospheric secondary radiation leaking through it.

Mahoney, W. A.↗

Ge:Ga testing at Cornell

The spiking and memory behavior of a number of Ge:Ga detectors was studied. The detectors were manufactured at a number of locations using several different contacting techniques. Two detectors manufactured for the IRAS program by Rockwell International were studied more extensively than the others. These detectors IRD 1981 and IRD 1982 were 'witness sample' detectors for the IRAS bands 4 and 3, respectively. During the testing period both the apparatus and the test procedures were changed numerous times. At each change consistency checks were made. The data are believed to be internally consistent from end to end.

Briotta, D. A., Jr.↗

Comprehensive thermoelectric properties of n- and p-type 78a/o Si - 22a/o Ge alloy

The time and temperature dependence of the thermoelectric properties on n- and p-type 78 a/o Si - 22 a/o Ge alloy are presented in detail for the range of temperatures of zero to 1000 C and operating times up to twelve years. The mechanisms responsible for the time dependence of the properties are discussed and mathematical models used in the derivation of the property values from experimental data are presented. The thermoelectric properties for each polarity type of the alloy are presented as a function of temperature for various operating times.

Raag, V.↗

Ge photocapacitive MIS infrared detectors

An undoped Ge photocapacitive detector is reported which has peak normalized detectivities at wavelengh 1.4 microns and chopping frequencies 13-1000 Hz of 9 x 10 to the 12th, 4 x 10 to the 9th cm Hz to the 1/2th/W operating respectively at temperatures 77, 195, and 295 K. The observed temperature, spectral, and frequency response of the signal and noise are explained in terms of the measured space charge and interface state properties of the device.

Binari, S. C.↗

Susceptibility measurements on the superconducting properties of Nb-Ge alloys

A susceptibility apparatus to measure superconducting properties of samples made in the MSFC Drop Tube was used to measure the transition temperature (Tc) and susceptibilities of Nb and Nb Ge Alloys prepared in bulk spherical (2-4 mm diameter) form using a 32 m drop tube in which containerless low gravity solidification could take place. Results indicate that a drop tube processing environment was beneficial for increasing the Tc of the superconducting phase of the material over that of arc melted material. The increase in Tc is found to be related to the amount of solidification of the total sample that took place before reaching the bottom of the drop tube. In phase and quadrature phase measurements of the specimen's susceptibility indicated that some improvement in homogeneity takes place in drop tube processing. These phase measurements also indicated little or no shielding of a lower Tc phase by a higher Tc filamentary structure.

Rathz, T. J.↗

Prototype Ge:Ga detectors for the NASA-Ames cooled grating spectrometer

The detectors were fabricated from a Ge:Ga wafer from Eagle-Pitcher with a room temperature resistivity of approx. 12ohms cm. The wafer is approximately 2 inches in diameter and 0.061 inches thick. The contact material was ion implanted with Boron using 10 to the 14th power ions/sq cm at 25 Kev and 2 x10 to the 14th power ions/sq cm at 50 Kev. The crystal was then sputter-cleaned and metallized first with sputtered Ti and then sputter Au. In addition to the usual infrared measurements of responsivity and noise, measurements were made of the detectors' response to ionizing radiation.

Houck, J. R.↗

Solidification studies of Nb-Ge alloys at large degrees of supercooling

A 32 meter evacuated drop tube has been used to investigate the solidification of Nb-Ge alloys after deep undercooling. Samples have been supercooled as much as 500 K below the liquidus by using free-fall conditions to eliminate crucible induced nucleation. Final microstructures are dependent on the quenching rates at the bottom of the drop tube with a striking extension of the beta phase solubility limit at the higher quenching rates.

Lacy, L. L.↗

Development of dynamic simulation of TF34-GE-100 turbofan engine with post-stall capability

This paper describes the development of a hybrid computer simulation of a TF34-GE-100 turbofan engine with post-stall capability. The simulation operates in real-time and will be used to test and evaluate stall recovery control modes for this engine. The simulation calculations are performed by an analog computer with a peripheral multivariable function generation unit used for computing bivariate functions. Tabular listings of a simulation variables are obtained by interfacing to a digital computer and using a custom software package for data collection and display.

Krosel, S. M.↗

Conceptual design of a hybrid Ge:Ga detector array

For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

Parry, C. M.↗

Free-standing thin film Ge single crystals grown by plasma-enhanced chemical vapor deposition

The films, which are approximately 10 microns in thickness, are grown epitaxially on polished (100) NaCl substrates at 450 C by plasma enhanced chemical vapor deposition. Upon cooling, the films are separated from the substrate by differential shear stress, leaving free-standing films of Ge which can be handled. Growths are attained by nucleating at minimum plasma power for very brief intervals and then raising the power to 65 W to increase the growth rate to approximately 10 microns/h. It is found that substrate exposure to the plasma at too high a power for too long a time sputters and erodes the surface, thereby substantially degrading the nucleation process and the ultimate growths. It is noted that the free-standing films are visually specular and exhibit a high degree of crystalline order when examined by X-ray diffraction. Auger electron spectroscopy and energy dispersive analysis of X-rays reveal no detectable bulk contamination.

Outlaw, R. A.↗

Development of dynamic simulation of TF34-GE-100 turbofan engine with post-stall capability

This paper describes the development of a hybrid computer simulation of a TF34-GE-100 turbofan engine with post-stall capability. The simulation operates in real-time and will be used to test and evaluate stall recovery control modes for this engine. The simulation calculations are performed by an analog computer with a peripheral multivariable function generation unit used for computing bivariate functions. Tabular listings of simulation variables are obtained by interfacing to a digital computer and using a custom software package for data collection and display.

Krosel, S. M.↗

Coordination of Fe, Ga and Ge in high pressure glasses by Moessbauer, Raman and X-ray absorption spectroscopy, and geological implications

For some time, it has been recognized that the structure of silicate liquids has a great bearing on such magma properties as viscosity, diffusivity, and thermal expansion and on the extrapolation of thermodynamic quantities outside of the experimentally measurable range. In this connection it is vital to know if pressure imposes changes in melt structure similar to the pressure-induced reconstructive transformations in crystals. In the present study on 1 bar and high pressure glasses, an investigation is conducted regarding the coordination of Fe(3+) in Fe silicate glasses by Moessbauer spectroscopy. Raman spectroscopy is employed to explore the coordinations of Ge(4+) in GeO2 glasses and of Ga(3+) in NaGa silicate glasses, while the coordination of Ga(3+) in NaGaSiO4 glasses is studied with the aid of methods of X-ray absorption spectroscopy.

Fleet, M. E.↗

New adatom model for Si(11) 7X7 and Si(111)Ge 5X5 reconstructed surfaces

A new adatom model differing from the conventional model by a reconstruction of the substrate is proposed. The new adatom structure provides an explanation for the 7x7 and 5x5 size of the unit cells seen on annealed Si(111) and Si(111)-Ge surfaces, respectively. The model is consistent with structural information from vacuum-tunneling microscopy. It also provides simple explanations for stacking-fault-type features expected from Rutherford backscattering experiments and for similarities in the LEED and photoemission spectra of 2x1 and 7x7 surfaces.

Chadi, D. J.↗