NASA NTRS · 19790011145
Ge:Ga testing at Cornell
Abstract
The spiking and memory behavior of a number of Ge:Ga detectors was studied. The detectors were manufactured at a number of locations using several different contacting techniques. Two detectors manufactured for the IRAS program by Rockwell International were studied more extensively than the others. These detectors IRD 1981 and IRD 1982 were 'witness sample' detectors for the IRAS bands 4 and 3, respectively. During the testing period both the apparatus and the test procedures were changed numerous times. At each change consistency checks were made. The data are believed to be internally consistent from end to end.
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Briotta, D. A., Jr., Houck, J. R.. 1979-01-01. Ge:Ga testing at Cornell. https://ntrs.nasa.gov/citations/19790011145
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