JANTX/N746A diode
Samples manufactured by Siemens and Motorola were tested. Both lots did well in groups 1 and 3 testing. Failure analysis was done for group 2 tests because of excessive reverse-leakage-current failure mode.
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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JANTX/N972B zener diode
Tested Zeners were manufactured by Siemens and Motorola. Devices tested in groups 1 and 2 did quite well. Notable damage to both manufacturer lots occurred in group 2 testing.
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JANTX1N5420 diode
Testing of sample lots from Unitrode and Micro Semiconductor had to be stopped in group 1 test because 50% failure rate limit was reached. Failure analysis was performed only for group 2 testing because of apparent failure mode.
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Diode step stress program for JANTX1N649-1
The effect of power/temperature step stress when applied to a variety of semiconductor devices is evaluated. A total of 48 samples were submitted to be processed. Control sample units were maintained for verification of the electrical parametric testing. The test circuit was used to power all of the test devices during the power/temperature stress conditions.
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The MOM tunneling diode - Theoretical estimate of its performance at microwave and infrared frequencies
A theoretical analysis of the metal-oxide-metal (MOM) antenna/diode as a detector of microwave and infrared radiation is presented with the experimental verification conducted in the far infrared. It is shown that the detectivity at room temperature can be as high as 10 to the 10th per W Hz exp 1/2 at frequencies of 10 to the 14th Hz in the infrared. As a result, design guidelines are obtained for the lithographic fabrication of thin-film MOM structures that are to operate in the 10-micron region of the infrared spectrum.
Sanchez, A.↗
Diode laser-CO2 laser heterodyne spectrometer - Measurement of 2sQ/1,1/ in 2 nu 2-nu 2 of NH3
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Hillman, J. J.↗
Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
The paper presents an analytical treatment of transparent-emitter devices, particularly solar cells, that is more complete than previously available treatments. The proposed approach includes the effects of bandgap narrowing, Fermi-Dirac statistics, built-in field due to impurity profile, and a finite surface recombination velocity at the emitter surface. It is demonstrated that the transparent-emitter model can predict experimental values of Voc observed on n(plus)-p thin diffused junction silicon solar cells made on low-resistivity (0.1 ohm-cm) substrates. A test is included for the self-consistent validity of the transparent-emitter model. This test compares the calculated transit time of minority carriers across the emitter with the Auger-impact minority-carrier lifetime within the emitter region.
Shibib, M. A.↗
Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors
A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.
Shibib, M. A.↗
Intercomparison of CO2 and HCN wave numbers at 800-600 kaysers with a diode laser spectrometer
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Devi, V. M.↗
JANTX1N2970B zener diode
Report evaluates effects of power and temperature overstress on General Semi-conductor and Siemens devices. Excessive failure rates limited testing. Failure modes are described.
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JANTX1N2989B zener diode
Report evaluates effects of power and temperature overstress on General Semiconductor and Siemens devices. Mechanical disruption is prominent failure mode. Other failures are described.
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JANTX1N3016B zener diode
Report evaluates effects of power and temperature overstress on Motorola and Siemens devices. Reverse bias leakage maximum limit failure and Zener-breakdown maximum limit failure were common. Other failures are described.
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Far-field radiation pattern of tunable diode lasers
Technique rapidly determines far-field spatial energy distribution. Method takes about 3 minutes. It is optically simple and is economical, using standard laboratory parts and equipment. It records automatically without operator control and is easily adaptable to computer control of input instructions and computer treatment of output data. Degree of data resolution is limted only by width of recorder pen, and data are repeatable.
Lash, T. J.↗
Advances in tunable diode laser technology
The improvement of long-term reliability, the purification of mode properties, and the achievement of higher-temperature operation were examined. In reliability studies a slow increase in contact resistance during room temperature storage for lasers fabricated with In-Au or In-Pt contacts was observed. This increase is actually caused by the diffusion of In into the surface layer of laser crystals. By using a three layered structure of In-Au-Pt or In-Pt-Au, this mode of degradation was reduced. In characterizing the mode properties, it was found that the lasers emit in a highly localized, filamentary manner. For widestripe lasers the emission occurs near the corners of the junction. In order to achieve single-mode operation, stripe widths on the order of 8-10 micrometers are needed. Also, it was found that room temperature electroluminescence is possible near 4.6 micrometers.
Lo, W.↗
Heterodyne frequency measurements with a tunable diode laser-CO2 laser spectrometer - Spectroscopic reference frequencies in the 9.5-micron band of carbonyl sulfide
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Wells, J. S.↗
Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range
Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.
Hsieh, H.-H.↗
Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers
Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.
Botez, D.↗
Line intensities from band and diode laser measurements: Neutrino 4 of CH4
The experimental data and theoretical work on the 7.7 micron band of methane are reviewed. This band is particularly relevant in studies of the atmospheres of Jupiter, Saturn and the other outer planets. Methane spectra taken from the infrared spectrometer (IRIS) aboard Voyager, and a temperature profile derived by inverting those data, both for hydrogen and methane are presented.
Fox, K.↗