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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Beam patterns of light-emitting diodes

IR-sensitive film, placed at various source-to-detector distances, records output beam pattern of LED. Information is then used to determine optimum position of detector surface for maximum radiation interception.

Thomas, E. F., Jr.↗
NASA NTRS1976

"Thermal-diode" heat pipe

Device transfers heat in one direction and blocks heat transfer in opposite direction.

Kirkpatrick, J. P.↗
NASA NTRS1975

Silicon Schottky photovoltaic diodes for solar energy conversion

Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

Anderson, W. A.↗
NASA NTRS1978

The 1.1 micrometer and visible emission semiconductor diode lasers

In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

Ladany, I.↗
NASA NTRS1977

Design curves for double-heterojunction laser diodes

This paper reviews theoretical double-heterojunction laser design curves relating the structure with the transverse mode order able to propagate, the degree of radiation confinement to the active region, the maximum field intensity within the device, and the radiated beam shape. The curves presented are general and applicable to any double-heterojunction structure where the spacing of the heterojunctions and the refractive index in the relevant regions are known.

Butler, J. K.↗
NASA NTRS1978

Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes

Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease

Kressel, H.↗
NASA NTRS1980

JANTX1N645-1 diode

Samples manufactured by Semtech were tested. Devices showed excessine reverse leakage currents during each of three test phases. Results of testing suggest that failures occurred because of static charge on surface of encapsulant, caused by thermal decomposition of paint.

Source record↗
NASA NTRS1980

JANTX1N649-1 diode

Samples mamufactured by Semtech and Micro Semiconductor were tested. Both lots did quite well in tests. Plot showing cumulative failure distribution for group 2 was drawn for both lots. Graphs for groups 1 and 3 failures could not be drawn because of extremely low occurence.

Source record↗