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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Ultrasonic/Sonic Drill for High Temperature Application

Venus is one of the many significant scientific targets for NASA. New rock sampling tools with the ability to be operated at high temperatures of the order of 460 deg C are required for surface in-situ sampling/analysis missions. Piezoelectric materials such as LiNbO? crystals and Bismuth Titanate are potentially operational at the temperature range found on the surface of Venus. A study of the feasibility of producing piezoelectric drills for a temperature up to 500 deg C was conducted. The study includes investigation of the high temperature properties of piezoelectric crystals and ceramics with different formulas and doping. Several prototypes of Ultrasonic/Sonic Drill/Corers (USDC) driven by transducers using the high temperate piezoelectric ceramics and single LiNbO? crystal were fabricated. The transducers were analyzed by scanning the impedance at room temperature and 500 deg C under both low and high voltages. The drilling performances were tested at temperature up to 500 deg C. Preliminary results were previously reported [Bao et al, 2009]. In this paper, the progress is presented and the future works for performance improvements are discussed.

Piezoelectric Drill↗
NASA NTRS2020

Popcorning Failures in Polymer and MnO2 Tantalum Capacitors

Popcorning is a well-known effect in plastic encapsulated microcircuits (PEM) and it occurs in chip tantalum capacitors. The sensitivity of components to the presence of moisture during soldering is characterized by the moisture sensitivity level (MSL); however, contrary to PEMs, there is no standard procedure for establishing MSL for tantalum capacitors.The effect of absorbed moisture on soldering related degradation and failures in tantalum capacitors have not been studied properly yet, and there is no sufficient information regarding the difference in the sensitivity to soldering between polymer and MnO2 capacitors. In this work, 16 types of polymer and 9 types of MnO2 tantalum capacitors with different moisture content have been tested before and after reflow soldering. The level of moisture release during soldering has been estimated and thermo-mechanical analysis used to assess deformation of capacitorsduring soldering simulations. Results show that moisture uptake in similar parts is approximately two times greater in polymer than in MnO2 capacitors. Cracking of the case and degradation of parameters can occur in both types of parts, but MnO2 capacitors are much more likely to fail catastrophically with a short circuit and possible ignition during the first power-on cycle. This type of failure in MnO2 capacitors is lot-related, can occur even at derated voltages and relatively low levels of moisture sorption that corresponds to room conditions. Baking before soldering is an effective measure to prevent failures even in lots susceptible to popcorning damage.

Capacitor↗
NASA NTRS2021

Effect of Soldering on Polymer and MnO2 Tantalum Capacitors

Soldering might have a strong effect on performance and reliability of most surface mount technology components, including tantalum capacitors. High quality tantalum capacitors are likely the only type of components where soldering simulation is the first step during screening. Nevertheless, post-soldering failures of tantalum capacitors happen and require additional analysis. Popcorning is a well-known effect in plastic encapsulated microcircuits (PEM) and it occurs also in chip tantalum capacitors. The sensitivity of parts to the presence of moisture during soldering is characterized by the moisture sensitivity level (MSL); however, contrary to PEMs, there is no standard procedure for establishing MSL for tantalum capacitors. The effect of absorbed moisture on soldering related degradation and failures in tantalum capacitors have not been studied properly yet, and there is no sufficient information regarding the difference in the sensitivity to soldering between polymer and MnO2 tantalum capacitors. In this work, 16 types of polymer and 9 types of MnO2 cathodes tantalum capacitors with different moisture content have been tested before and after reflow soldering. The level of moisture release after soldering has been estimated and thermo-mechanical analysis used to assess deformation of capacitors during soldering simulations. Results show that moisture uptake in similar parts is approximately two times greater in polymer than in MnO2 capacitors. Cracking of the case and degradation of parameters can occur in both types of parts, but MnO2 capacitors are much more likely to fail catastrophically with a short circuit and possible ignition during the first power-on cycle. This type of failure in MnO2 capacitors is lot-related, can occur even at derated voltages and relatively low levels of moisture sorption corresponding to room conditions. Baking before soldering is an effective measure to prevent failures even in lots susceptible to popcorning damage. Recommendations for baking and testing to establish MSL are suggested.

Alexander Teverovsky↗
NASA NTRS2021

Effect of Preconditioning on Post-Soldering Failures in Tantalum Capacitors

Soldering have a strong effect on performance and reliability of most surface mount technology components, including tantalum capacitors. High quality tantalum capacitors are likely the only type of components where soldering simulation is the first step during screening. Nevertheless, post-soldering failures of tantalum capacitors do happen and require additional analysis. Popcorning is a well-known effect in plastic encapsulated microcircuits (PEM) and it occurs also in chip tantalum capacitors. The sensitivity of parts to the presence of moisture during soldering is characterized by the moisture sensitivity level (MSL); however, contrary to PEMs, there is no standard procedure for establishing MSL for tantalum capacitors, and standard J-STD-020 is applicable partially only. In this work, the effect of absorbed moisture on soldering related degradation and failures in tantalum capacitors have been studied using 22 types of polymer and 11 types of MnO2 cathodes tantalum capacitors including single and multianode parts. The amount of moisture released during soldering has been estimated by measurements of mass and capacitance variations. Results show that moisture uptake in similar parts is approximately two times greater in polymer than in MnO2 capacitors. Cracking of the case and degradation of parameters can occur in both types of parts, but MnO2 capacitors are much more susceptible to catastrophic short circuit failures and their ignition is possible during the first power-on cycle. This type of failure in MnO2 capacitors is lot-related, can occur even at derated voltages and relatively low levels of moisture sorption corresponding to room conditions. Baking before soldering is an effective measure to prevent failures even in lots susceptible to popcorning damage. Recommendations for testing to establish MSL and for baking to reduce the probability of failures are suggested.

tantalum polymer capacitors↗
DOE OSTI2025

Characterization and Damping Control of Mechanical Connections to Improve Performance of Horn Stripline

Magnetic focusing horns are critical components for creating a stable beam of neutrinos for neutrino facilities, such as the Long Baseline Neutrino Facility (LBNF) and the Neutrinos and Main Injector (NuMI) beam lines at Fermilab. The pulsed magnetic horns are powered by high current electricity through long striplines. In addition to requirements for low inductance and voltage standoff, the striplines must survive in a harsh radiation environment for the operational life of the component, specified as the 100 million pulses requirement for LBNF. Each stripline assembly consists of four (eight layers that splits off to 2 pairs of four layers at the horn interface) layers of Al 6101-T6. As an electromechanical system, the stripline layers are bolted together with ceramic isolators for electrical insulation and connections must facilitate passive cooling and mechanical stability. The striplines experience vibrational force in addition to clamping force, repetitive thermal and electro-magnetic loading. The holes of stripline plates for ceramic joints represent one of the weak links for potential failure [1,2]. By characterizing the contact behavior of these joints and optimizing their damping properties through finite element analysis and experimental modal analysis, stripline performance and longevity can be improved. This study not only helps predict the behavior of the striplines but also improves their performance to meet the required operational lifetime.

Liu, Zunping [Fermilab]↗
NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2021

Advanced Low‐Flammable Electrolytes for Stable Operation of High‐Voltage Lithium‐Ion Batteries

Abstract Despite being an effective flame retardant, trimethyl phosphate (TMP a ) is generally considered as an unqualified solvent for fabricating electrolytes used in graphite (Gr)‐based lithium‐ion batteries as it readily leads to Gr exfoliation and cell failure. In this work, by adopting the unique solvation structure of localized high‐concentration electrolyte (LHCE) to TMP a and tuning the composition of the solvation sheaths via electrolyte additives, excellent electrochemical performance can be achieved with TMP a ‐based electrolytes in Gr∥LiNi 0.8 Mn 0.1 Co 0.1 O 2 cells. After 500 charge/discharge cycles within the voltage range of 2.5–4.4 V, the batteries containing the TMP a ‐based LHCE with a proper additive can achieve a capacity retention of 85.4 %, being significantly higher than cells using a LiPF 6 ‐organocarbonates baseline electrolyte (75.2 %). Meanwhile, due to the flame retarding effect of TMP a , TMP a ‐based LHCEs exhibit significantly reduced flammability compared with the conventional LiPF 6 ‐organocarbonates electrolyte.

Jia, Hao↗
NASA NTRS1969

Fuse protects circuit from voltage and current overloads

Low-melting resistor connected in series with the load protects the circuit against current overloads. It protects test subjects and patients being monitored by electronic instrumentation from inadvertant overloads of current, and sensitive electronic equipment against high-voltage damage.

Casey, L. O.↗
NASA NTRS2003

The Series Connected Buck Boost Regulator Concept for High Efficiency Light Weight DC Voltage Regulation

Improvements in the efficiency and size of DC-DC converters have resulted from advances in components, primarily semiconductors, and improved topologies. One topology, which has shown very high potential in limited applications, is the Series Connected Boost Unit (SCBU), wherein a small DC-DC converter output is connected in series with the input bus to provide an output voltage equal to or greater than the input voltage. Since the DC-DC converter switches only a fraction of the power throughput, the overall system efficiency is very high. But this technique is limited to applications where the output is always greater than the input. The Series Connected Buck Boost Regulator (SCBBR) concept extends partial power processing technique used in the SCBU to operation when the desired output voltage is higher or lower than the input voltage, and the implementation described can even operate as a conventional buck converter to operate at very low output to input voltage ratios. This paper describes the operation and performance of an SCBBR configured as a bus voltage regulator providing 50 percent voltage regulation range, bus switching, and overload limiting, operating above 98 percent efficiency. The technique does not provide input-output isolation.

Birchenough, Arthur G.↗
NASA NTRS1992

Low energy CMOS for space applications

The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

Panwar, Ramesh↗
NASA NTRS2006

Improved Control of Charging Voltage for Li-Ion Battery

The protocol for charging a lithium-ion battery would be modified, according to a proposal, to compensate for the internal voltage drop (charging current internal resistance of the battery). The essence of the modification is to provide for measurement of the internal voltage drop and to increase the terminal-voltage setting by the amount of the internal voltage drop. Ordinarily, a lithium-ion battery is charged at constant current until its terminal voltage attains a set value equal to the nominal full-charge potential. The set value is chosen carefully so as not to exceed the lithium-plating potential, because plated lithium in metallic form constitutes a hazard. When the battery is charged at low temperature, the internal voltage drop is considerable because the electrical conductivity of the battery electrolyte is low at low temperature. Charging the battery at high current at any temperature also gives rise to a high internal voltage drop. In some cases, the internal voltage drop can be as high as 1 volt per cell. Because the voltage available for charging is less than the terminal voltage by the amount of the internal voltage drop, the battery is not fully charged (see figure), even when the terminal voltage reaches the set value. In the modified protocol, the charging current would be periodically interrupted so that the zero-current battery-terminal voltage indicative of the state of charge could be measured. The terminal voltage would also be measured at full charging current. The difference between the full-current and zero-current voltages would equal the internal voltage drop. The set value of terminal voltage would then be increased beyond the nominal full-charge potential by the amount of the internal voltage drop. This adjustment would be performed repeatedly, in real time, so that the voltage setting would track variations in the internal voltage drop to afford full charge without risk of lithium plating. If the charging current and voltage settings were controlled by a computer, then this method of charge control could readily be implemented in software.

Timmerman, Paul↗
NASA NTRS1985

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗
NASA NTRS1985

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗
DOE OSTI2020

Analytical Voltage Sensitivity Analysis for Unbalanced Power Distribution System

Large scale integration of distributed energy resources and electric vehicles in a transactive energy environment present new challenges in terms of voltage stability and fluctuations in a power distribution system. The impact of different level of DER/EV penetration on the voltages across the network is typically quantified through voltage sensitivity analyses. Existing methods of voltage sensitivity analysis are computationally expensive and prior efforts to develop analytical approximation lacks generality and have not been effectively validated. The objective of this work is to provide a new analytical method of voltage sensitivity analysis that has low computational cost and also allows for stochastic analysis of voltage change. This paper first derives an analytical approximation of change in voltage at a particular bus due to change in power consumption at other bus in a radial three phase unbalanced power distribution system. Then, the proposed method is shown to be valid for different load configurations, which demonstrates its generality. The results from our analytical approach is validated via classical load flow simulation of the test system based on IEEE 37 bus network. The proposed method is shown to have good accuracy, and computation complexity is of order O(1), compared to O(n3) in classical sensitivity analysis approaches.

Munikoti, Sai↗