NASA NTRS · 19860055711
A new very high voltage semiconductor switch
Abstract
A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.
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Sundberg, G. R.. 1985-01-01. A new very high voltage semiconductor switch. https://ntrs.nasa.gov/citations/19860055711
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