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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.
A semiconductor vacuum chemical vapor deposition facility (totally automatic) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to the track, and sent on to the next operation. The entire process was controlled by a computer.
A semiconductor diffusion and oxidation facility (totally automated) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to track, and sent on to the next process. The entire process was controlled by a computer.
The operational principles and a possible device configuration of one dimensional monolithically integrated semiconductor laser arrays are described. The output beam of the array can be electronically steered. Devices of the type can find applications in optical communication systems where the power levels needed are above the capability of a single laser device.
Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.
The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.
Techniques to generate picosecond optical pulses from semiconductor lasers are reviewed. Experimental methods and results of theoretical analysis of active modelocking are presented. It is shown that modelocking will achieve the shortest pulses; but the use of a cumbersome external cavity will probably limit its practical use. Short pulses produced by direct modulation such as gain switching are considerably broader than those obtained by passive modelocking. However, no external cavity is needed; and the simplicity of this method makes it important to be explored further. Recent experimental results are discussed where picosecond pulses from a buried heterostructure laser diode with ultrashort current pulses obtained from a comb generator are generated. Also, 28 ps pulses were obtained at 2.5 GHz repetition frequency, using the gain switching method. An analytical analysis based on the rate equations shows qualitative agreement with our experimental results.
A small-signal model of a semiconductor laser is extended to include the effects of intrinsic noise by adding current and voltage noise sources. The current noise source represents the shot noise of carrier recombination, while the voltage noise source represents the random process of simulated emission. The usefulness of the noise equivalent circuit is demonstrated by calculating the modulation and noise characteristics of a current-driven diode as a function of bias current and frequency.
A semiconductor laser diode was mode locked in an external cavity when synchronously pumped with 90-ps current pulses. Transform-limited optical pulses with a 10-ps pulse width and a peak power of 160 mW were produced. Operating characteristics of such a system are described.
The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.
Copper systems equivalent in performance to silver or gold systems. Titanium layer and palladium layer deposited on semiconductor device by electron beam evaporation. Desired pattern etched using photoresist. Thin layer of copper plated on contact pattern from cyanide solution. Copper layer then built up to 4 to 8 microns by electroplatng from acid solution.
Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.
A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments.
The effectiveness of powdered semiconductor materials in photocatalyzing candidate redox reactions was investigated. The rate of the photocatalyzed oxidation of cyanide at platinized TiO2 was studied. The extent of the cyanide reaction was followed directly using an electroanalytical method (i.e. differential pulse polarography). Experiments were performed in natural or artificial light. A comparison was made of kinetic data obtained for photocatalysis at platinized powders with rate data for nonplatinized powders.
Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.
Against a background of an extensive survey of the present state of the art in the field of III-V semiconductors for operation at microwave frequencies (or gigabit rate speeds), likely requirements of future space communications systems are identified, competing technologies and physical device limitations are discussed, and difficulties in implementing emerging technologies are projected. On the basis of these analyses, specific research and development programs required for the development of future systems components are recommended.
The quality of semiconductor crystals grown by the vertical Bridgman technique is strongly influenced by the axial and radial variations of temperature within the charge. The relationship between the thermal parameters of the vertical Bridgman system and the thermal behavior of the charge are examined. Thermal models are developed which are capable of producing results expressable in analytical form and which can be used without recourse to extensive computer work for the preliminary thermal design of vertical Bridgman crystal growth systems. These models include the effects of thermal coupling between the furnace and the charge, charge translation rate, charge diameter, thickness and thermal conductivity of the confining crucible, thermal conductivity change and liberation of latent heat at the growth interface, and infinite charge length. The hot and cold zone regions, considered to be at spatially uniform temperatures, are separated by a gradient control region which provides added thermal design flexibility for controlling the temperature variations near the growth interface.
The nonlinear parabolic equation describing the propagation of the electromagnetic wave in a semiconductor with the superlattice is analyzed. The possibility of the existence of the solitary waves is proved both for a small amplitude of the electrical field and the latter moderate values.