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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 991 records · Page 55
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Spectralon BRDF and DHR Measurements in Support of Satellite Instruments Operating Through Shortwave Infrared

Satellite instruments operating in the reflective solar wavelength region require accurate and precise determination of the Bidirectional Reflectance Distribution Functions (BRDFs) of the laboratory and flight diffusers used in their pre-flight and on-orbit calibrations. This paper advances that initial work and presents a comparison of spectral Bidirectional Reflectance Distribution Function (BRDF) and Directional Hemispherical Reflectance (DHR) of Spectralon*, a common material for laboratory and onorbit flight diffusers. A new measurement setup for BRDF measurements from 900 nm to 2500 nm located at NASA Goddard Space Flight Center (GSFC) is described. The GSFC setup employs an extended indium gallium arsenide detector, bandpass filters, and a supercontinuum light source. Comparisons of the GSFC BRDF measurements in the ShortWave InfraRed (SWIR) with those made by the NIST Spectral Trifunction Automated Reference Reflectometer (STARR) are presented. The Spectralon sample used in this study was 2 inch diameter, 99% white pressed and sintered Polytetrafluoroethylene (PTFE) target. The NASA/NIST BRDF comparison measurements were made at an incident angle of 0 deg and viewing angle of 45 deg. Additional BRDF data not compared to NIST were measured at additional incident and viewing angle geometries and are not presented here The total combined uncertainty for the measurement of BRDF in the SWIR range made by the GSFC scatterometer is less than 1% (k=1). This study is in support of the calibration of the Joint Polar Satellite System (JPSS) Radiation Budget Instrument (RBI) and Visible Infrared Imaging Radiometer Suite (VIIRS) of and other current and future NASA remote sensing missions operating across the reflected solar wavelength region.

Georgiev, Georgi T.↗
NASA NTRS1994

Cryogenic GaAS JFETS

Gallium arsenide junction field-effect transistors (GaAS JFETS) are promising for deep cryogenic (<10k) readout electonics applications.

structure↗
NASA NTRSDate not supplied

6 um Pulsed OP-GaAs OPO Laser for Unambiguous Water Ice Detection on the Moon and Other Planetary Bodies

NASA demands a laser transmitter for planetary remote sensing to detect water-ice on the Moon and other planetary bodies. Based on the measurement of the Moon Mineralogy Mapper (M3) instrument, the discovery of water ice on the Moon was acclaimed, but the measurement is disputed because OH- and/or H2O-bearing materials share the absorption line around 3 μm wavelength. Lunar Flashlight, another mission project exploring the surface of Moon which will be launched later this year, enables to map the minerals on dark area of the Moon, but could not resolve the above-mentioned ambiguity. The absorption of 6.08 μm light is uniquely associated with the bending resonance of H2O since there is no comparable vibration in confounding OH-bearing materials. 6.08 μm laser between the atmospheric windows: middle-wave infrared (3-5 μm) and long-wave infrared (8-12 μm) has not been commercially available. Our approach is a Q-switched Ho:YLF laser pumped the orientation-pattern Gallium Arsenide optical parametric oscillator (OP-GaAs OPO) for generating high-energy laser pulses at the wavelength of 6.08 μm. In the current design, a 1.94 μm Tm:fiber is used as the pump source. In the compact design, a 1.94 μm laser diode will replace the Tm:fiber laser as the pump source. We will combine this proposed mid-infrared laser with the latest HgCdTe avalanche photodiode (APD) array to design a lidar for detecting water ice on the Moon and Mars from their respective orbits, enabling novel science and in-situ resource utilization. Our instrument is an enabling technology aboard the Artemis program and others.

mid-infrared laser↗
NASA NTRS2021

An evolutionary system of mineralogy, Part V: Aqueous and thermal alteration of planetesimals (~4565 to 4550 Ma)

Part V of the evolutionary system of mineralogy explores phases produced by aqueous alteration, metasomatism, and/or thermal metamorphism—relicts of ancient processes that affected virtually all asteroids and that are preserved in the secondary mineralogy of meteorites. We catalog 166 historical natural kinds of minerals that formed by alteration in the parent bodies of chondritic and non-chondritic meteorites within the first 20 Ma of the solar system. Secondary processes saw a dramatic increase in the chemical and structural diversity of minerals. These phases incorporate 41 different mineral-forming elements, including the earliest known appearances of species with essential Co, Ge, As, Nb, Ag, Sn, Te, Au, Hg, Pb, and Bi. Among the varied secondary meteorite minerals are the earliest known examples of halides, arsenides, tellurides, sulfates, carbonates, hydroxides, and a wide range of phyllosilicates.

Robert M. Hazen↗
DOE OSTI2017

Actinide oxide photodiode and nuclear battery

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

25 ENERGY STORAGE↗
DOE OSTI2018

A High Current, Short Pulse, RF Synchronized Electron Gun for the Stanford Linear Accelerator

For the generation of intense single and multiple bunches of electrons (>8 nc per bunch) for accelerator studies at SLAC, a high peak current photoemission electron gun has been developed. A gallium arsenide photocathode is illuminated by the optical beam from a frequency doubled, actively mode-locked and Q-switched Nd:YAG laser. The mode-locked optical pulses are of variable, sub-nanosecond width and occur with a spacing of 8.4 nsec, synchronized with the 2856 MHz accelerator rf. The gun is designed to be space charge limited at 15 A and 200 kV, although emission of 60 A was obtained with a 57 kV test structure, corresponding to a current density of 180 A/cm 2 . With the proper choice of laser wavelength, the electron beam may be 40% longitudinally polarized.

Sinclair, C.↗
DOE OSTI2018

High thermal conductivity materials for thermal management applications

High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Emergent phases in iron pnictides: Double-Q antiferromagnetism, charge order and enhanced nematic correlations

Electron correlations produce a rich phase diagram in the iron pnictides. Earlier theoretical studies on the correlation effect demonstrated how quantum fluctuations weaken and concurrently suppress a $C_2$-symmetric single-Q antiferromagnetic order and a nematic order. Here we examine the emergent phases near the quantum phase transition. For a $C_4$-symmetric collinear double-Q antiferromagnetic order, we show that it is accompanied by both a charge order and an enhanced nematic susceptibility. Our results provide understanding for several intriguing recent experiments in hole-doped iron arsenides, and bring out common physics that underlies the different magnetic phases of various iron-based superconductors.

Yu, R↗
DOE OSTI2020

Higher-order phonon scattering: advancing the quantum theory of phonon linewidth, thermal conductivity and thermal radiative properties

Phonon scattering plays a central role in the quantum theory of phonon linewidth, which in turn governs important properties including infrared spectra, Raman spectra, lattice thermal conductivity, thermal radiative properties, and also signifi- cantly affects other important processes such as hot electron relaxation. Since Maradudin and Fein’s classic work in 1962, three-phonon scattering had been considered as the dominant intrinsic phonon scattering mechanism and has seen tremendous advances. However, the role of the higher-order four-phonon scattering had been persistently unclear and so was ignored. The tremendous complexity of the formalism and computational challenges stood in the way, prohibiting the direct and quantitative treatment of four-phonon scattering. In 2016, a rigorous four-phonon scattering formalism was developed, and the prediction was realized using empirical potentials. In 2017, the method was extended using first-principles calculated force constants, and the thermal conductivities of boron arsenides (BAs), Si and diamond were predicted. The predictions for BAs were later confirmed by several independent experiments. Four-phonon scattering has since been investigated in a range of materials and established as an important intrinsic scattering mechanism for thermal transport and radiative properties. Specifically, four-phonon scattering is important when the fourth-order scattering potential or phase space becomes relatively large. The former scenario includes: (i) nearly all materials when the temperature is high; (ii) strongly anharmonic (low thermal conductivity) materials, including most rocksalt compounds, halides, hydrides, chalcogenides and oxides. The latter scenario includes: (iii) materials with large acoustic–optical phonon band gaps, such as XY compounds with a large atomic mass ratio between X and Y; (iv) two- dimensional materials with reflection symmetry, such as single-layer graphene, single-layer boron nitride and carbon nanotubes; and (v) phonons with a large density of states, such as optical phonons, which are important for Raman, infrared and thermal radiative properties. Four-phonon scattering is expected to gain broad interest in various technologically important materials for thermoelectrics, thermal barrier coatings, thermal energy storage, phase change, nuclear power, ultra-high temperature ceramics, infrared spectra, Raman spectra, radiative transport, hot electron relaxation and radiative cooling. Four-phonon scattering has been, and will continue to be, established as an important intrinsic phonon scattering mechanism beyond three-phonon scattering. The prediction of four-phonon scattering will transition from a breakthrough to a new routine in the next decade.

Feng, Tianli↗
DOE OSTI2022

Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021

Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Photoconductive metasurface-based ultrafast device

A theoretically perfectly absorbing photoconductive all-dielectric metasurface is provided. This metasurface can improve the efficiency and performance of ultrafast photoconductive switches and detectors. In an embodiment, the metasurface is incorporated in photoconductive THz switches or detectors. In embodiments, the metasurface is constituted by a network of gallium arsenide resonators. Each resonator supports two degenerate and critically coupled magnetic dipole modes. Simultaneous excitation of these two modes leads to theoretically close-to-perfect optical absorption near the resonant wavelength.

Brener, Igal↗
DOE OSTI2024

Edge majorana quasiparticles and qubits

Various embodiments described herein provide for a topological quantum computer that uses edge Majorana quasi-particles to form qubits. An inverted Indium Arsenide (InAs) and Gallium Antimonide (GaSb) heterostructure is disclosed that is a quantum spin Hall insulator. A layer of aluminum can be deposited over a nanotube that is placed across the layers of the heterostructure. Once the nanotube is removed, and a gate is formed on the heterostructure and the heterostructure is cooled so that the aluminum becomes superconducting, helical edge states are formed at the junction of the super conducting aluminum, the InAs, and the GaSb which creates a Majorana zero modes (MZMs) at zero magnetic field. The MZMs can be used to construct a topological qubit for fault-resistant topological quantum computation.

Pan, Wei↗
DOE OSTI2010

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Efficient GaInNAs Gain Mirrors for Semiconductor Disk Lasers at 1.18 {mu}m and 1.22 {mu}m

We report two GaInNAs/GaAs semiconductor disk lasers emitting at the wavelengths of 1180 nm and 1220 nm. The lasers generated 5 W and 7 W output powers, respectively, at a mount temperature of 15 deg. C. Both the gain mirrors were grown by molecular beam epitaxy and consisted of a GaAs/AlAs distributed Bragg reflector and an active region with 10 GaInNAs/GaNAs/GaAs QWs.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors

We have examined the responses of GaAs, InP, InAs, and AlAs to 30 keV focused ion beam (FIB) irradiation and applied a unified model that consistently explains the observed effects. Nanodots were observed to form on GaAs, InP, and InAs under irradiation at normal incidence, while nanodots are not observed on AlAs. The FIB response and nanodot formation behavior of each material is discussed with regard to a few basic material properties and a model for nanodot creation and growth by the action of preferential sputtering and Ostwald ripening. The model predicts the development of a stable average nanodot size with increasing ion dose, with the average nanodot size depending on the excess group III adatom yield, adatom surface diffusion rate, and surface tension. These predictions qualitatively agree with the experimentally observed trends for GaAs and InP. They also agree for the initial nanodot formation on InAs, but this material system exhibits a sudden transition in the nanodot size distribution. The model predicts that nanodots will have difficulty forming and growing on AlAs, which is also in agreement with our experimental results.

77 NANOSCIENCE AND NANOTECHNOLOGY↗