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NASA NTRS · 20210004325

Cryogenic GaAS JFETS

Abstract

Gallium arsenide junction field-effect transistors (GaAS JFETS) are promising for deep cryogenic (<10k) readout electonics applications.

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BibTeXRIS

Fossum, E., Cunningham, T.. 1994-04-05. Cryogenic GaAS JFETS. https://ntrs.nasa.gov/citations/20210004325

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