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At least 955 records · Page 53

High-speed tunable generation of random number distributions using actuated perpendicular magnetic tunnel junctions

Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we demonstrate the tunability and quality of random number distributions generated by pMTJs operating at a frequency of 104 MHz. First, changing the pulse amplitude is used to systematically vary the probability bias. The variance of the resulting bitstreams closely matches the expected binomial distribution, demonstrating consistency with an underlying sequence of Bernoulli trials. Second, the quality of uniform distributions of 8-bit random numbers generated with a probability bias of 0.5 is considered. A reduced chi-square analysis of these data shows that only two XOR operations are sufficient to achieve this distribution with p-values greater than 0.05. Finally, we show that there is a correlation between long-term probability bias variations and pMTJ resistance. These findings suggest that variations in the characteristics of the pMTJ underlie the observed variation of probability bias. In conclusion, our results highlight the potential of stochastically actuated pMTJs for high-speed, tunable TRNG applications, showing the importance of the stability of pMTJ device characteristics in achieving reliable, long-term performance.

Magnetic tunnel junctions↗

Single layer graphene protective layer on GaAs photocathodes for spin-polarized electron source

GaAs-based photocathodes are the primary choice for polarized electron sources, commonly used in polarized electron microscopes and polarized positron sources. GaAs photocathodes are typically activated with cesium and oxygen, which are highly reactive and require an ultra-high vacuum (⁠~ 10 -11 Torr or lower) to operate reliably, resulting in substantial operational difficulties. A short exposure to a mediocre vacuum results in an instantaneous loss of cathode quantum efficiency (QE) due to the chemical reaction of the active layer with residual gas molecules or back-bombardment ions during operation. Covering the GaAs cathode with a 2D material, such as monolayer graphene, could provide protection against such damage due to the inhibition of chemical reactions with residual gas molecules. In this paper, we have incorporated a method known as intercalation to pass the active material underneath the graphene and activate the superlattice GaAs/GaAsP (SL-GaAs) photocathode. X-ray photoelectron spectroscopy, low-energy electron microscopy, and Mott scattering measurements were performed to evaluate the formation of the photocathode under graphene, as well as its spectral response and electron spin polarization. Our results demonstrate that the successful activation of the SL-GaAs photocathode with a graphene protection layer is achieved with a moderate QE. Furthermore, we found that the electron spin polarization of the cathode with a surface protection layer is higher than the conventional cathode without a protection layer.

2D materials↗

Characterization of electron spin polarization from positive electron affinity GaAs photocathodes

Negative Electron Affinity (NEA) GaAs photocathodes are widely used to generate spin-polarized electron beams, typically achieving Electron Spin Polarizations (ESPs) in the range of 35%–40%. However, when operated in a Positive Electron Affinity (PEA) state, where a potential barrier inhibits low-energy electrons from escaping into vacuum, measured ESPs can exceed 50%. This effect can occur naturally during photocathode operation, as the NEA surface activation layers can degrade easily over time, increasing the electron affinity. In this work, we investigate and characterize the behavior of enhanced ESPs under PEA conditions. We present experimental measurements of ESP using a retarding-field Mott polarimeter on GaAs photocathodes with controlled and varying electron affinities. These results are complemented by theoretical explanations considering the material band structure, the light excitation profile, and spin depolarization mechanisms.

Electronic band structure↗

Modeling strain and quantum confinement in GaAs/Ga x In 1−x P superlattices for spin-polarized electron sources

In this study, we systematically design and simulate a series of GaAs-based superlattice configurations aimed at enhancing heavy-hole–light-hole band splitting while simultaneously optimizing band alignment to reduce the conduction band barrier, thereby facilitating efficient electron transport. These combined effects are crucial for achieving high electron spin polarization and high quantum efficiency, the two key performance metrics of next-generation spin-polarized electron sources. We investigated three types of superlattice architectures: (1) compressively strained GaAs wells on GaInP barriers, yielding a maximum band splitting of 140 meV, (2) lattice-matched GaAs/GaInP structures, resulting in the maximum band splitting of 75 meV, and (3) tensile strained GaAs wells on GaInP barriers, with a maximum band splitting of 40 meV. The results demonstrate the tunability of heavy-hole–light-hole band splitting and establish a design framework for high-performance spin-polarized photocathodes based on a combination of strain engineering, quantum confinement, and optimized heterostructure design.

Electron sources↗

Impact of superlattice size on quantum efficiency and polarization in MOCVD-grown strained GaAs/GaAsP photocathodes

Strained superlattice GaAs photocathodes are crucial for providing high photocurrent beams of spin-polarized electrons at several accelerator facilities including the Continuous Electron Beam Accelerator Facility at Thomas Jefferson National Accelerator Facility and the future Electron–Ion Collider at Brookhaven National Laboratory. Here, in this work, we study the effects of varying the number of superlattice pairs on the polarization and photocurrent of the photocathodes. We observe a saturation in quantum efficiency beyond 30 pairs, with additional layers yielding minimal photocurrent improvement while noticeably reducing the polarization of the beam.

Chemical vapor deposition↗

Electronic band structure and magnetism of CoFeV 0.5 Mn 0.5 Si

Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices.

36 MATERIALS SCIENCE↗

Large-field magnetoresistance of nanometer scale nickel films grown on molybdenum disulfide

The magnetoresistance of thin nickel films grown on molybdenum disulfide was measured in perpendicular magnetic fields as high as 90 kOe. Films with thicknesses of 20 nm provided continuous surfaces for measurement. The magnetoresistance was found to be linear with respect to the applied magnetic field with no sign of saturation. There was also no evidence of hysteresis or temperature dependence between 100 to 300 K. STM measurement showed the deposited Ni forms a continuous film of extremely small nanoclusters. However, the field dependence of magnetoresistance was found to be significantly larger than bulk Ni, which is in turn larger than Ni with nanoscale grains. We expect the unusual magnetoresistance behavior to arise from some property of the Ni-MoS 2 interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural, electronic, and magnetic properties of CoFeVGe-based compounds: Experiment and theory

We have carried out a combined theoretical and experimental investigation of both stoichiometric and nonstoichiometric CoFeVGe alloys. In particular, we have investigated CoFeVGe, Co 1.25 Fe 0.75 VGe, Co 0.75 Fe 1.25 VGe, and CoFe 0.75 VGe bulk alloys. Our first principles calculations suggest that all four alloys show ferromagnetic order, where CoFeVGe, Co 1.25 Fe 0.75 VGe, and Co 0.75 Fe 1.25 VGe are highly spin polarized with spin polarization values of over 80%. However, the spin polarization value of CoFe 0.75 VGe is only about 60%. We have synthesized all four samples using arc melting and high-vacuum annealing at 600 °C for 48 hours. The room temperature x-ray diffraction of these samples exhibits a cubic crystal structure with disorder. All the samples show single magnetic transitions at their Curie temperatures, where the Curie temperature and high field (3T) magnetization are 288 K and 42 emu/g; 305 K and 1.5 emu/g; 238 K and 39 emu/g; and 306 K and 35 emu/g for CoFeVGe, Co 1.25 Fe 0.75 VGe, Co 0.75 Fe 1.25 VGe, and CoFe 0.75 VGe, respectively.

36 MATERIALS SCIENCE↗

Synthesis, crystal structure, and magnetic properties of CoMoFeAl and related compounds

We have carried out joint theoretical and experimental investigations of three Heusler compounds CoMoFeAl, CoMo 0.5 Fe 1.5 Al, and Co 1.5 Mo 0.5 FeAl. Our first-principle calculations show that all three compounds show either ferro- or ferrimagnetic order with CoMoFeAl and CoMo 0.5 Fe 1.5 Al exhibiting high spin polarization of almost 80%. The investigated samples were prepared using arc melting and high vacuum annealing. All the samples show cubic crystal structure with disorder. The parent compound CoMoFeAl shows a small saturation magnetization of 12 emu/g, and a Curie temperature of 440 K. The other two compounds, namely, Co 1.5 Mo 0.5 FeAl and CoMo 0.5 Fe 1.5 Al, show much higher saturation magnetizations of 62 emu/g and 59 emu/g, and substantially higher Curie temperatures of 950 K and 780 K, respectively.

36 MATERIALS SCIENCE↗

Spin–orbit torque in a three-fold-symmetric bilayer and its effect on magnetization dynamics

Field-free switching of perpendicular magnetization has previously been observed in an epitaxial L1 1 -ordered CoPt/CuPt bilayer and attributed to spin–orbit torque (SOT) arising from the crystallographic 3m point group of the interface. Using a first-principles nonequilibrium Green's function formalism combined with the Anderson disorder model, we calculate the angular dependence of the SOT in a CoPt/CuPt bilayer and find that the magnitude of the 3m SOT is about 20% of the conventional dampinglike SOT. We further study the magnetization dynamics in perpendicularly magnetized films in the presence of 3m SOT and Dzyaloshinskii–Moriya interaction, using the equations of motion for domain wall dynamics and micromagnetic simulations. For systems where strong interfacial DMI results in the Néel character of domain walls, we find that a very large current density is required to achieve deterministic switching, because reorientation of the magnetization inside the domain wall is necessary to induce the switching asymmetry. For thicker films with relatively weak interfacial DMI and the Bloch character of domain walls, deterministic switching is possible at much smaller current densities, which may explain the recent experimental findings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnon-magnon coupling in an all-oxide insulator garnet Y 3 ⁢Fe 5 ⁢O 12 /Tm 3 ⁢Fe 5⁢ O 12 heterostructure

Hybrid magnonic systems have recently attracted significant attention due to their intriguing physics and potential applications in coherent information processing. In this regard, we have investigated magnon-magnon coupling in the all-oxide insulator garnet Y 3⁢ Fe 5⁢ O 12 (YIG)/Tm 3 ⁢Fe 5 ⁢O 12 (TmIG) heterostructure. The presence of an avoided mode crossing region between the ferromagnetic resonance modes of YIG and TmIG indicates interfacial exchange coupling. This all-insulator system enables interfacial coupling via magnon-magnon interactions. The mode crossing occurs at 𝑓 𝑐 = 6.88 GHz, corresponding to the minimal resonance separation between the two hybrid modes. The coupling strength is determined to be 78 MHz (or 2.8 mT), providing clear evidence of magnon-magnon coupling between the two Kittel modes in the YIG/TmIG insulator system at 200 K. As a result, these findings pave the way for engineering magnonic band structures, tunable coherent magnonic interactions, and nonreciprocal spin transport, which are crucial for advancing ultralow-power magnonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Space-Charge-Limited van der Waals Spin Transistor

Integrating semiconducting and magnetic materials could combine transistorlike operation with nonvolatility and enable architectures such as logic in memory. Here, in this work, we employ correlated electrical transport and scanning nitrogen-vacancy center magnetic imaging to elucidate a spin transistor concept that amalgamates vertical and lateral hopping transport inside a 2D antiferromagnetic semiconductor, mechanistically distinct from vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. Our layer-dependent space charge mechanism for convergent electrical and magnetic control opens opportunities to address limitations in contemporary computing.

2-dimensional systems↗

Enhancement of microwave to optical spin-based quantum transduction via a magnon mode

We propose a method for converting single microwave photons to single optical sideband photons based on spinful impurities in magnetic materials. This hybrid system is advantageous over previous proposals because (i) the implementation allows much higher transduction rates (10 3 times faster at the same optical pump Rabi frequency) than state-of-the-art devices, (ii) high-efficiency transduction is found to happen in a significantly larger space of device parameters (in particular, over 1 GHz microwave detuning), and (iii) it does not require mode volume matching between optical and microwave resonators. We identify the needed magnetic interactions as well as potential materials systems to enable this speed up using erbium dopants for telecom compatibility. This is an important step towards realizing high-fidelity entangling operations between remote qubits and will provide additional control of the transduction through perturbation of the magnet.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Prototypes of Nonrelativistic Spin Splitting and Polarization in Symmetry Broken Antiferromagnets

Antiferromagnets that break both space-time reversal and translation-spin-rotation symmetries were recently predicted [L.-D. Yuan, Z. Wang, J.-W. Luo, E. I. Rashba, and A. Zunger, Phys. Rev. B 102, 014422 (2020)] to possess splitting between the otherwise spin-degenerate energy bands even without the relativistic spin-orbit coupling (SOC). Here, we point out that such nonrelativistic spin splitting (NRSS)—in particular, “spin splitting type 4” (SST-4) symmetry-broken antiferromagnets—can be divided into subgroups having distinct patterns of spin splitting and spin textures, depending on additional auxiliary symmetries of spin interconversion and polarity. These SST-4 subgroups include the 𝛼-type (no spin-interconverting symmetry) having spin splitting at the Brillouin zone center, as well as the 𝛽 subgroup in which a rotation symmetry is applied and determines the alternating spin texture and the 𝛾 subgroup having exclusively reflection spin-interconverting symmetry. Unlike ferrimagnets, the 𝛼-type compounds are shown to have tiny net magnetization at finite temperature and thus avoid the adverse effect of the stray field. The 𝛼 and 𝛽 subgroups can be either polar or nonpolar, whereas the 𝛾 subgroup is polar only, providing a basis for possible switching by external fields. The combination of NRSS-enabling and auxiliary symmetries is used here as a filter for identifying previously synthesized compounds as specific prototypes. Their characteristic splitting and spin polarization are calculated by density functional theory to the benefit of potential future experimental testing. Interesting results are as follows: (i) SOC-independent NRSS can exceed the magnitude of the SOC-induced Rashba and Dresselhaus spin splitting in semiconductors. (ii) Examples of predicted 𝛼-type insulating compounds include BiCrO 3 (nonpolar) and Mn 2 ⁢ScSbO 6 (polar), the latter having spin splitting of 158 meV and 160 meV in the valence and conduction bands, respectively. (iii) The 𝛽-type (Cu 2 ⁢Y 2 ⁢O 5 and FeF 2 ) and 𝛾-type compounds (Mn 4 ⁢Nb 2 ⁢O 9 and FeScO 3 ) are distinguished both by their auxiliary symmetries and polarity. The spin textures of 𝛾-type compounds are mirror reflected with spin degeneracy of the wave vectors on that mirror. These observations will likely broaden the experimental playing field of NRSS physics significantly.

antiferromagnets↗

Spontaneous magnon decays from nonrelativistic time-reversal symmetry breaking in altermagnets

Quasiparticles are central to condensed matter physics, but their stability can be undermined by quantum many-body interactions. Magnons, i.e., quasiparticles in quantum magnets, are particularly intriguing because their properties are governed by both real and spin space. While crystal symmetries may be low, spin interactions often remain approximately isotropic, limiting spontaneous magnon decay. Textbook wisdom holds that collinear Heisenberg magnets follow a dichotomy: ferromagnets host stable magnons, while antiferromagnetic magnons may decay depending on dispersion curvature. Up to now, relativistic spin-orbit coupling and noncollinear order that connect spin space to real space were shown to introduce more complex magnon instability mechanisms. Here, we show that even in nonrelativistic isotropic collinear systems, this conventional dichotomy is disrupted in altermagnets. Altermagnets, a newly identified class of collinear magnets, exhibit compensated spin order with nonrelativistic time-reversal symmetry breaking and even-parity band splitting. Using kinematic analysis, nonlinear spin-wave theory, and quantum simulations, we reveal that even weak band splitting opens a decay phase space, driving quasiparticle breakdown. Additionally, 𝑑-wave altermagnets form a rare “island of stability” at the Brillouin-zone center. Furthermore, our findings establish a quasiparticle stability trichotomy in collinear Heisenberg magnets and position altermagnets as a promising platform for unconventional spin dynamics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Tailoring Spin-Wave Channels in a Reconfigurable Artificial Spin Ice

Artificial spin ices are ensembles of geometrically arranged interacting nanomagnets that have shown promising potential for the realization of reconfigurable magnonic crystals. Such systems allow for the manipulation of spin waves on the nanoscale and their potential use as information carriers. However, there are presently two general obstacles to the realization of artificial spin-ice-based magnonic crystals: the magnetic state of artificial spin ices is difficult to reconfigure and the magnetostatic interactions between the nanoislands are often weak, preventing mode coupling. We demonstrate, using micromagnetic modeling, that coupling a reconfigurable artificial spin-ice geometry made of weakly interacting nanomagnets to a soft magnetic underlayer creates a complex system exhibiting dynamically coupled modes. These give rise to spin-wave channels in the underlayer at well-defined frequencies, based on the artificial spin-ice magnetic state, which can be reconfigured. Finally, these findings open the door to the realization of reconfigurable magnonic crystals with potential applications for data transport and processing in magnonic-based logic architectures.

25 ENERGY STORAGE↗

Phonon Transport Controlled by Ferromagnetic Resonance

The resonant coupling of phonons and magnons is important for the interconversion of phononic and spin degrees of freedom. We study the phonon transmission in LiNbO 3 manipulated by the dynamic magnetization in a Ni thin film. It is observed that the phonons can be absorbed strongly through resonant magnon-phonon coupling, which is realized by our modifying the magnon-phonon coupling within the Ni itself as well as our optimizing the interfacial coupling between Ni and LiNbO 3 . The line shapes of phonon transmission are further investigated considering the magnon-phonon interconversion in the elastically driven ferromagnetic resonance process. The results promote unique routes for phonon manipulation and detection in the presence of magnetization dynamics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin Rectification and Electrically Controlled Spin Transport in Molecular-Ferroelectrics-Based Spin Valves

We report a spin-rectification effect in a spin-valve structure consisting of ferroelectric croconic acid (C 5 H 2 O 5 ) sandwiched between ferromagnetic electrodes La 0.7 Sr 0.3 MnO 3 and Co, which can be switched between a high-resistance (off ) and a low-resistance (on) state by a poling voltage. In the off state, the magnetoresistance (MR) sign reverses with the measurement voltage with a 0.1-V offset, suggesting a spin-rectification behavior, while in the on state the MR remains negative. These observations can be understood in terms of electrically controlled interfacial energy-band alignment either from the electrostatic effect or from the interfacial redox process. In conclusion, the observed spin-rectification effect suggests thepossibility of diodelike devices for spin-polarized current.

36 MATERIALS SCIENCE↗