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Characterization of electron spin polarization from positive electron affinity GaAs photocathodes

Levenson, S. J. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000234452289)·Andorf, M. B. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000251090777)·Reamon, M. A. [Cornell University, Ithaca, NY (United States)] (ORCID:000900050718154X)·Vareskic, B. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000308899770)·Galdi, A. [University of Salerno, Fisciano (Italy)] (ORCID:0000000328635393)·Chubenko, O. [Northern Illinois University, DeKalb, IL (United States)] (ORCID:0000000280321482)·Callahan, J. [Northern Illinois University, DeKalb, IL (United States)] (ORCID:0000000295635222)·Maxson, J. M. [Cornell University, Ithaca, NY (United States)] (ORCID:0009000464798848)·Bazarov, I. V. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000316929642)
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Abstract

Negative Electron Affinity (NEA) GaAs photocathodes are widely used to generate spin-polarized electron beams, typically achieving Electron Spin Polarizations (ESPs) in the range of 35%–40%. However, when operated in a Positive Electron Affinity (PEA) state, where a potential barrier inhibits low-energy electrons from escaping into vacuum, measured ESPs can exceed 50%. This effect can occur naturally during photocathode operation, as the NEA surface activation layers can degrade easily over time, increasing the electron affinity. In this work, we investigate and characterize the behavior of enhanced ESPs under PEA conditions. We present experimental measurements of ESP using a retarding-field Mott polarimeter on GaAs photocathodes with controlled and varying electron affinities. These results are complemented by theoretical explanations considering the material band structure, the light excitation profile, and spin depolarization mechanisms.

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Electronic band structureElectronic transportPhotocathodesPolarimetersPotential energy barrierSemiconductorsSpin-orbit interactionsSpintronicsUltra-high vacuumVacuum energy

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Levenson, S. J. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000234452289), Andorf, M. B. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000251090777), Reamon, M. A. [Cornell University, Ithaca, NY (United States)] (ORCID:000900050718154X), Vareskic, B. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000308899770), Galdi, A. [University of Salerno, Fisciano (Italy)] (ORCID:0000000328635393), Chubenko, O. [Northern Illinois University, DeKalb, IL (United States)] (ORCID:0000000280321482), Callahan, J. [Northern Illinois University, DeKalb, IL (United States)] (ORCID:0000000295635222), Maxson, J. M. [Cornell University, Ithaca, NY (United States)] (ORCID:0009000464798848), Bazarov, I. V. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000316929642). 2025-09-08. Characterization of electron spin polarization from positive electron affinity GaAs photocathodes. https://doi.org/10.1063/5.0286753

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