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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

THz Hot-Electron Photon Counter

We present a concept for the hot-electron transition-edge sensor capable of counting THz photons. The main need for such a sensor is a spectroscopy on future space telescopes where a background limited NEP approx. 10(exp -20) W/H(exp 1/2) is expected at around 1 THz. Under these conditions, the rate of photon arrival is very low and any currently imaginable detector with sufficient sensitivity will operate in the photon counting mode. The Hot-Electron Photon Counter based on a submicron-size Ti bridge has a very low heat capacity which provides a high enough energy resolution (approx.140 GHz) at 0.3 K. With the sensor time constant of a few microseconds, the dynamic range would be approx. 30 dB. The sensor couples to radiation via a planar antenna and is read by a SQUID amplifier or by a 1-bit RSFQ ADC. A compact array of the antenna-coupled counters can be fabricated on a silicon wafer without membranes.

radiation detectors↗
DOE OSTI2021

Calibration of the underground muon detector of the Pierre Auger Observatory

To obtain direct measurements of the muon content of extensive air showers with energy above 10 16.5 eV, the Pierre Auger Observatory is currently being equipped with an underground muon detector (UMD), consisting of 219 10 m 2 -modules, each segmented into 64 scintillators coupled to silicon photomultipliers (SiPMs). Direct access to the shower muon content allows for the study of both of the composition of primary cosmic rays and of high-energy hadronic interactions in the forward direction. As the muon density can vary between tens of muons per m 2 close to the intersection of the shower axis with the ground to much less than one per m 2 when far away, the necessary broad dynamic range is achieved by the simultaneous implementation of two acquisition modes in the read-out electronics: the binary mode, tuned to count single muons, and the ADC mode, suited to measure a high number of them. In this work, we present the end-to-end calibration of the muon detector modules: first, the SiPMs are calibrated by means of the binary channel, and then, the ADC channel is calibrated using atmospheric muons, detected in parallel to the shower data acquisition. The laboratory and field measurements performed to develop the implementation of the full calibration chain of both binary and ADC channels are presented and discussed. The calibration procedure is reliable to work with the high amount of channels in the UMD, which will be operated continuously, in changing environmental conditions, for several years.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1982

Bolometer and photosensitive detector systems for IR

In order to achieve the full sensitivity required for future space astronomy applications, IR detector systems will have to be cooled to 0.1 K or less. The feasibility of such cryocooling has been demonstrated for the established laboratory technique of adiabatic demagnetization, and it has been shown that bolometers made from compensated silicon, with ion-implanted contacts, come close to calculated ultimate performance limits. Unlike bolometers, silicon and germanium photoconductors are highly wavelength-dependent. Useful wavelengths are presented for the most promising photodetectors based on these materials. It is noted that, as the relevant microelectronic technology advances, array detectors in the near-IR may be expected to approach the size and performance of large, intrinsic silicon CCD arrays now available for optical wavelengths.

Low, F. J.↗
NASA NTRS2016

Ground Calibration of the Astro-H (Hitomi) Soft X-Ray Spectrometer

The Astro-H (Hitomi) Soft X-ray Spectrometer (SXS) was a pioneering imaging x-ray spectrometer with 5 eV energy resolution at 6 keV. The instrument used a microcalorimeter array at the focus of a high-throughput soft x-ray telescope to enable high-resolution non-dispersive spectroscopy in the soft x-ray waveband (0.3-12 keV). We present the suite of ground calibration measurements acquired from 2012-2015, including characterization of the detector system, anti-coincidence detector, optical blocking filters, and filter-wheel filters. The calibration of the 36-pixel silicon thermistor microcalorimeter array includes parameterizations of the energy gain scale and line spread function for each event grade over a range of instrument operating conditions, as well as quantum efficiency measurements. The x-ray transmission of the set of five Al/polyimide thin-film optical blocking filters mounted inside the SXS dewar has been modeled based on measurements at synchrotron beamlines, including with high spectral resolution at the C, N, O, and Al K-edges. In addition, we present the x-ray transmission of the dewar gate valve and of the filters mounted on the SXS filter wheel (external to the dewar), including beryllium, polyimide, and neutral density filters.

detectors↗
DOE OSTI2022

Argonne Pixel Tracking Telescope at the Fermilab Test Beam Facility

The Argonne Pixel Tracking Telescope is installed at the Fermilab Test Beam Facility. The telescope consists of six planar n + -in-n silicon sensors with a pixel size of 250 × 50 μm 2 . The instrumentation of the telescope is described including the electrical and mechanical setups. A 120 GeV proton beam is used to evaluate the telescope performance using criteria such as cluster size, pixel tracking efficiency, and spatial resolution. The spatial resolution of the telescope is measured to be 72 μm × 13 μm and is consistent with the resolution determined from the simulation. In conclusion, this telescope will be used to test the performance of the various silicon pixel technology as well as to study the effects and the performance of the detectors after being irradiated.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1979

Electronic pictures from charged-coupled devices

Imaging system uses charge-coupled devices (CCD's) to generate TV-like pictures with high resolution, sensitivity, and signal-to-noise ratio. It combines detectors for five spectral bands as well as processing and control circuitry all on single silicon chip.

Mccann, D. H.↗
NASA NTRS1983

Si:Bi switched photoconducttor infrared detector array

A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.

Eakin, C. E.↗
NASA NTRS1989

Hybrid Infrared Imager

Experimental device has low noise and high uniformity. Infrared imaging device combines array of InSb photodetectors with array of silicon field-effect-transistor switches. InSb chip forms roof over Si chip, each InSb detector cell engaging indium bump on corresponding Si switch cell below it. FET switches in 128-by-128 array turn on in sequence, read out charges on 128-by-128 array of photodetectors and multiplex them in serial output that represents pattern of light on array of photodetectors. Useful in sensitive infrared cameras for astronomy, medicine, inspection, and military surveillance. Reads out image data at rates up to 10 MHz and expands to 256-by-256 array.

Bailey, Gary C.↗
NASA NTRS2006

Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current

Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.

Orion↗
NASA NTRS2021

Ambient Performance Testing of the CubeSat Infrared Atmospheric Sounder (CIRAS)

Hyperspectral infrared measurements of Earth’s atmosphere from space have proven their value for weather forecasting, climate science and atmospheric composition. The CubeSat Infrared Atmospheric Sounder (CIRAS) instrument will demonstrate a fully functional infrared temperature, water vapor and carbon monoxide sounder in a CubeSat sized volume for at least an order of magnitude lower cost than legacy systems. Design for a CubeSat significantly reduces cost of access to space and enables flight in a constellation to reduce revisit time and enable new measurements including 3D winds. A technology demonstration of CIRAS is currently under development at JPL. The effort has completed integration and ambient testing of a high fidelity brassboard, complete with the flight configured optics assembly developed by Ball Aerospace with a JPL Immersion Grating and Black Silicon Entrance Slit. The brassboard includes a flight-configured High Operating Temperature Barrier Infrared Detector (HOT-BIRD) mounted in an Integrated Dewar Cryocooler Assembly (IDCA), enabling testing in the ambient environment. Ambient testing included radiometric testing of the system to characterize the instrument operability and NEdT. Spatial testing was performed to characterize the system line spread function (LSF) in two axes and report FWHM of the LSF. Spectral testing involved an air path test to characterize the spectral/spatial transformation matrix, and an etalon was used to measure the Spectral Response Functions (SRFs). Results of the testing show the CIRAS performs exceptionally well and meets the key performance required of the system. The end result of testing is the CIRAS instrument now meets TRL 4 with confidence in a brassboard configuration ready for thermal vacuum (TVac) testing necessary to achieve TRL 5 for the system.

Wilson, Robert C.↗
NASA NTRS2002

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC 'Pop-up' Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Voellmer, George M.↗
DOE OSTI2022

Front-End Design for SiPM-Based Monolithic Neutron Double Scatter Imagers

Neutron double scatter imaging exploits the kinematics of neutron elastic scattering to enable emission imaging of neutron sources. Due to the relatively low coincidence detection efficiency of fast neutrons in organic scintillator arrays, imaging efficiency for double scatter cameras can also be low. One method to realize significant gains in neutron coincidence detection efficiency is to develop neutron double scatter detectors which employ monolithic blocks of organic scintillator, instrumented with photosensor arrays on multiple faces to enable 3D position and multi-interaction time pickoff. Silicon photomultipliers (SiPMs) have several advantageous characteristics for this approach, including high photon detection efficiency (PDE), good single photon time resolution (SPTR), high gain that translates to single photon counting capabilities, and ability to be tiled into large arrays with high packing fraction and photosensitive area fill factor. However, they also have a tradeoff in high uncorrelated and correlated noise rates (dark counts from thermionic emissions and optical photon crosstalk generated during avalanche) which may complicate event positioning algorithms. We have evaluated the noise characteristics and SPTR of Hamamatsu S13360-6075 SiPMs with low noise, fast electronic readout for integration into a monolithic neutron scatter camera prototype. The sensors and electronic readout were implemented in a small-scale prototype detector in order to estimate expected noise performance for a monolithic neutron scatter camera and perform proof-of-concept measurements for scintillation photon counting and three-dimensional event positioning.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel $1 mm^2$ superconducting microwire single photon detectors (SMSPDs) with $1\,\mathrm{\mu m}$-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all 8 pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity published to date, and the first report of an SMSPD array. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with $cm^2$-scale active area and beyond.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1990

LWIR HgCdTe: Innovative detectors in an incumbent technology

HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

Tennant, William E.↗
NASA NTRS2002

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC 11) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC "Pop-Up" Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(Registered Trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the CalTech Submillimeter Observatory (CSO) are presented.

Voellmer, George M.↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗