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At least 955 records · Page 53

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NASA NTRS1979

Silicon ingot casting: Heat exchanger method. Multi-wire slicing: Fixed abrasive slicing technique, phase 3

In the area of ingot casting the proof of concept of heat exchanger method (HEM) was established. It was also established that HEM cast silicon yielded solar cell performance comparable to Czochralski grown material. Solar cells with conversion efficiencies of up to 15% were fabricated. It was shown that square cross-section ingots can be cast. In the area of crystal slicing, it was established that silicon can be sliced efficiently with the fixed abrasive slicing technique approach. This concept was carried forward to 10 cm diameter workpiece.

Schmid, F.↗

NASA NTRS1979

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Fiegl, G.↗

NASA NTRS1979

The Production of Solar Cell Grade Silicon from Bromosilanes

A continuous Flow Reactor (CFR) process based on the hydrogen reduction of the bromosilanes SiBr4 and SiHBr3 was proposed. Initial experiments carried and directed at obtaining overall yield data for bromosilane reduction in the CFR, indicated the need for increased reactor residence time and deposition substrate particle packing density to fully characterize the kinetics (rate) and thermodynamics (yield) of observed silicon production. Fluidized bed experiments were therefore initiated to overcome these experimental difficulties, which showed both thermal decomposition and hydrogen reduction of SiHBr3 in a fluid bed reactor to present attractive closed-loop processes for producing solar cell grade polycrystalline silicon. No process selection could be made however due to the fact that preliminary optimization of 2 of 3 process stages in each case during the course of the experimental program showed comparable attainment of cost element objectives.

Schumacher, J. C.↗

NASA NTRS1979

Wear of aluminum and hypoeutectic aluminum-silicon alloys in boundary-lubricated pin-on disk sliding

The friction and wear of pure aluminum and a number of hypoeutectic aluminum-silicon alloys (with 3 to 12 wt %Si) were studied with a pin-on-disk apparatus. The contacts were lubricated with mineral oil and sliding was in the boundary-lubrication regime at 2.6 cm/sec. Surfaces were analyzed with photomicrographs, scanning electron microscopy, X-ray dispersive analysis, and diamond pyramid hardness measurements. There were two wear regimes for the alloys - high and low - whereas pure aluminum exhibited a high wear rate throughout the test period. Wear rate decreased and the transition stress from high to low wear increased with increasing hardness. There was no correlation between friction coefficient and hardness. A least squares curve fit indicated a wear-rate dependence greater than the inverse first power of hardness. The lower wear rates of the alloys may be due to the composites of silicon platelets in aluminum resulting in increased hardness and thus impairing the shear of the aluminum.

Ferrante, J.↗

NASA NTRS1979

Process Feasibility Study in Support of Silicon Material, Task 1

During this reporting period, major activies were devoted to process system properties, chemical engineering and economic analyses. Analyses of process system properties was continued for materials involved in the alternate processes under consideration for solar cell grade silicon. The following property data are reported for silicon tetrafluoride: critical constants, vapor pressure, heat of varporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analysis of the BCL process was continued with primary efforts being devoted to the preliminary process design. Status and progress are reported for base case conditions; process flow diagram; reaction chemistry; material and energy balances; and major process equipment design.

Li, K. Y.↗

NASA NTRS1978

Metallization of Large Silicon Wafers

A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

Pryor, R. A.↗

NASA NTRS1979

A New Method of Metallization for Silicon Solar Cells

A low cost ohmic contact on silicon solar cells based on molybdenum-tin metal systems was developed. The approach is based on the formulation of a screenable ink composed from molybdenum oxide and tin mixture. The reduction of Mo03 into Mo and the establishment of Mo 03:Sn ratio is studied. Both tasks were done in an experimental station constructed for this purpose. The results show that molybdenum was formed from its oxide at 800 C. and improved in bonding to silicon at 900 C. A 20% Mo03-80%Sn mixture was converted into metallic coating within this temperature range.

Macha, M.↗

NASA NTRS1979

Novel duplex vapor-electrochemical method for silicon solar cells

Optimization studies were carried out for the SiF4-Na reaction with solid Na feed. The goals of the study were the consistent production of high purity reaction products and the gathering of relevant information needed to scale-up the reactor. Parameters studied include: (1) effect of surface to volume ratio of Na slices on the extent of reaction; (2) effect of Na surface oxidation on the extent of reaction; (3) effect of external heating on the extent of SiF4-Na reaction; (4) effect of Na slice addition rate on extent of the reaction; and (5) SiF4-Na reaction - high pressure experiments. An investigation was also made of the possible role played by NaF as a fluxing agent during the separation of silicon by melting of the reaction product (Si + NaF) mixture. Since silicon can be produced by the thermite reaction between Na2SiF6 and Na, studies were initiated to gather information on parameters which control the efficiency of the thermite reaction.

Nanis, L.↗

NASA NTRS1979

Analysis of the Effects of Impurities in Silicon

A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. The program employed flight quality technologies and quality assurance to assure that variations in cell performance were due to the impurities incorporated in the silicon. The initial verification runs have resulted in an average AM0 cell efficiency of 12.8% at 25 C.

Wohlgemuth, J. H.↗

NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis

The standard solar cells (2x2 cm) from the cast silicon (HEM) showed a maximum AMO efficiency of 10.1%. Cells from the low resistivity material (0.5 ohm-cm) showed lower performance than those of the high resistivity cast silicon (3 ohm-cm), an average efficiency 9.5% versus 7.6%. Maximum AMO efficiency of the standard solar cells from the EFG (RH) ribbons was about 7.5%. The solar cells from the controlled SiC, using the displaced die, showed more consistent and better performance than those of the uncontrolled SiC ribbons, an average efficiency of 6.6% versus 5.4%. The average AMO efficiency of the standard SOC solar cells were about 6%. These were large area solar cells (an average area of 15 sq cm). A maximum efficiency of 7.3% was obtained. The SOC solar cells showed both leakage and series resistance problems, leading to an average curve fill factor of about 60%.

Yoo, H. I.↗

NASA NTRS1979

Evaluation of silicon carbide fiber/titanium composites

Izod impact, tensile, and modulus of elasticity were determined for silicon carbide fiber/titanium composites to evaluate their potential usefulness as substitutes for titanium alloys or stainless steel in stiffness critical applications for aircraft turbine engines. Variations in processing conditions and matrix ductility were examined to produce composites having good impact strength in both the as-fabricated condition and after air exposure at elevated temperature. The impact strengths of composites containing 36 volume percent silicon carbide (SiC) fiber in an unalloyed (A-40) titanium matrix were found to be equal to unreinforced titanium-6 aluminum-4 vanadium alloy; the tensile strengths of the composites were marginally better than the unreinforced unalloyed (A-70) matrix at elevated temperature, though not at room temperature. At room temperature the modulus of elasticity of the composites was 48 percent higher than titanium or its alloys and 40 percent higher than that of stainless steel.

Jech, R. W.↗

NASA NTRS1979

Evaluation of Selected Chemical Processes for Production of Low-cost Silicon, Phase 3

The construction and operation of an experimental process system development unit (EPSDU) for the production of granular semiconductor grade silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles is presented. The construction of the process development unit (PDU) is reported. The PDU consists of four critical units of the EPSDU: the fluidized bed reactor, the reactor by product condenser, the zinc vaporizer, and the electrolytic cell. An experimental wetted wall condenser and its operation are described. Procedures are established for safe handling of SiCl4 leaks and spills from the EPSDU and PDU.

Blocher, J. M., Jr.↗

NASA NTRS1979

Development of an Improved High Efficiency Thin Silicon Solar Cell

Breakage and front contact failure in high efficiency, textured ultrathin cells was reduced as a consequence of the introduction of process modifications. In a small production run, over one hundred ultrathin cells, having an average AMO efficiency of 13%, were fabricated from 10-25 ohm cm silicon. An in-house aluminum paste for back surface field formation was developed that resulted in cell efficiencies equivalent to those from commercial pastes. The quality of the back surface field was found to be dependent on the orientation of the silicon slice during alloying.

Storti, G.↗

NASA NTRS1979

Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

A low cost wafer surface texturizing process was studied. An investigation of low cost cleaning operations to clean residual wax and organics from the surface of silicon wafers was made. The feasibility of replacing dry nitrogen with clean dry air for drying silicon wafers was examined. The two stage texturizing process was studied for the purpose of characterizing relevant parameters in large volume applications. The effect of gettering solar cells on photovoltaic energy conversion efficiency is described.

Jones, G. T.↗

NASA NTRS1979

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

Peters, J. W.↗

NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗

NASA NTRS1979

Analysis of the Effects of Impurities in Silicon

A solar cell fabrication and analysis program to determine the effects on the resultant solar cell efficiency of impurities incorporated into silicon is conducted. Flight quality technologies and quality assurance are employed to assure that variations in cell performance are due to the impurities incorporated in the silicon. The type and level of impurity doping in each test lot is given and the mechanism responsible for the degradation of cell performance is identified and correlated to the doped impurities.

Wohlgemuth, J. H.↗

NASA NTRS1978

Ultra-thin silicon solar cells for high performance panel applications

Solar cells have been fabricated which achieved the highest power to mass ratios and radiation stability yet reported for silicon devices. The thinnest cells (.04 mm) had initial efficiencies in excess of 2 watts per gram (AMO) and 1.7 watts per gram after an irradiation of 1 x 10 to the 15th equivalent 1 MeV electrons per square centimeter. The cells have been successfully interconnected by welding and filtered using a FEP bonded, ceria-doped microsheet of six mil thickness. Handling losses during cell manufacture and panel assembly may be minimized through the use of an integral reinforcing perimeter or ribs which remove almost all restrictions on cell thickness and area. Such a cell is typically composed of a main section which can be as thin as 0.015 mm and is supported at the edge by a thicker border (0.20 mm) of silicon.

Gay, C. F.↗