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Zener diodes manufactured by Motorola and Siemens were tested. Apparent failure mode in all three groups was B (sub) V (Zener-breakdown-voltage) minimum failure. Both manufacturers had apporximately same amount of failure in each testing.
Tested diodes were manufactured aby Motorola and Siemens. Both sample lots performed well in groups 1 and 3 testing. Group 2 testing was most detrimental of three groups. Extreme heat was big factor in failure mode.
General Electric and International Rectifier switching diodes were tested. Group 2 testing proved to be most damaging to both lots. In group 2 testing many visual failures were seen in samples from both manufacturers.
Siemens and Motorola diodes were tested. Of three stress groups, group 2 prove to be most detrimental to both sample lots.
Tested diodes were manufactured by Micro Semiconductor and Semtech. Significant damage occurred only in group 1 testing.
Tested devices were manufactured by Semtech and Micro Semiconductor. Failure rate of Semtech diodes exceeded 50% in all three test groups. Failure mode could not be precisely determined.
Switching diodes manufactured by Micro Semidonductor and Semtech were tested. In groups 2 and 3 there were no Micro Semiconductor catastrophic failures. Testing of both lots was stopped in group 1 test because of 50% failure rate.
Micro Semiconductor and Semtech diodes were tested. In group 1 tests Micro Semiconductor and Semtech lot testing was stopped because of excess failure rate. Failure analysis was performed on group 1 and 3 because of apparent failure mode.
Diodes manufactured by Semtech and Micro Semiconductor were tested. Both sample lots exceeded 50% fail-rate in all groups. Failure analysis was performed for groups 2 and 3.
Diodes tested were manufactured by Semtech and Micro Semiconductor. Semtech sample lots completed all three testings with only one catastrophic failure. All three Micro Semiconductor lots had several failure that were submitted for failure analysis.
Tested diodes were manufactured by Semtech and Micro Semiconductor. Failures were experienced in groups 1 and 2 testing.
Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device was determined. Control units were maintained for verification of the electrical parametric testing. Results are reported.
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices. The switching diode JANTX1N5554 is examined.
The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.
The effect was studied of power/temperature step stress when applied to the zener diode JANTX1N972B manufactured by Siemens and Motorola. The power/temperature stress tests are presented, and failure analyses are included.
The effect was studied of power/temperature step stress when applied to the diode JANTX1N5622 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are included.
The effect of power/temperature step stress was studied when applied to the Diode JANTX1N5619 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are presented.