A semiconductor-ferroelectric memory device
Monolithic optically written and electrically read semiconductor-ferroelectric memory device employing single crystal barium titanate
Sandstrom, D. B.↗
SEARCH · Engineering Papers
Results for “Semiconductor”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Heterojunctions involving II-VI compound semiconductors
Heterojunctions with II-VI compound semiconductors, evaluating electro-optical performance
Milnes, A. G.↗
Integrated circuits and semiconductor devices- Theory and application
Book on integrated circuits and semiconductor devices covering MOSFET, optoelectronic devices, silicon controlled rectifiers and thyristors
Burrous, C. N.↗
Interaction of electrons with impurities and the k equals approximately zero longitudinal optical phonon in metal-insulator-semiconductor tunnel junctions
Electrons interaction with impurities and longitudinal optical phonon in metal-insulator- semiconductor tunnel junctions
Compton, W. D.↗
Resonant Raman scattering by Raman-active infrared-inactive phonons in II-IV semiconductors
Mg compounds family of antifluorite structured small-gap semiconductors, investigating surface light scattering properties by Raman scattering techniques
Anastassakis, E.↗
Vapor-phase growth of several III-V compound semiconductors
Crystal growth of III-V compound semiconductors from vapor phase, studying deposition processes chemistry by mass spectrometry
Ban, V. S.↗
Metallization systems for semiconductor devices
Metals and systems for semiconductor devices metallization, evaluating conductivity, adhesion, contact resistance, deposition ease, electrochemical corrosion, reliability and stability
Terry, L. E.↗
Statistical mechanics of charged traps in an amorphous semiconductor
Coulomb interaction effect between charged traps in amorphous semiconductor, noting state density reduction at Fermi energy
Srinivasan, G.↗
An approach to real-time process control of semiconductor wire-bonding
Thermal probe using infrared-transparent optical fiber attached to tip of collet with resin to prevent movement during bonding is used to accurately measure temperature during wire bonding on semiconductors for use in large scale integrated circuits.
Source record↗
Methods of measurement for semiconductor materials, process control, and devices
The development of methods of measurement for semiconductor materials, process control, and devices is discussed. The following subjects are also presented: (1) demonstration of the high sensitivity of the infrared response technique by the identification of gold in a germanium diode, (2) verification that transient thermal response is significantly more sensitive to the presence of voids in die attachment than steady-state thermal resistance, and (3) development of equipment for determining susceptibility of transistors to hot spot formation by the current-gain technique.
Bullis, W. M.↗
Vapor phase growth system and its use in the preparation of several III-V compound semiconductors
Vapor phase growth and properties of semiconductor materials
Enstrom, R. E.↗
Methods of measurement for semiconductor materials, process control, and devices
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.
Bullis, W. M.↗
Using the scanning electron microscope on the production line to assure quality semiconductors
The use of the scanning electron microscope to detect metallization defects introduced during batch processing of semiconductor devices is discussed. A method of determining metallization integrity was developed which culminates in a procurement specification using the scanning microscope on the production line as a quality control tool. Batch process control of the metallization operation is monitored early in the manufacturing cycle.
Adolphsen, J. W.↗
Photovoltage inversion effect and its application to semiconductor surface studies: CdS.
Experimental results on the surface states of the basal plane of CdS are presented and discussed in the light of a model of the photovoltage inversion effect. It is found that the surface states associated with this effect are in poor communication with the bulk and under normal conditions may require long periods of time to reach equilibrium. A combination of photovoltage inversion, photovoltage quenching, and photovoltage spectroscopy is believed to constitute a very effective tool for the study of surfaces of wide energy gap semiconductors.
Lagowski, J.↗
Glass encapsulation provides extra protection for IC semiconductor devices
Oxide-passivated semiconductor chip is given protective glass coating by means of vapor deposition over metallic substrate of integrated circuit (IC). Method provides more reliable oxide-passivation and hermetic sealing in current use. Chips and scratches incurred during dicing, testing, and assembly are markedly reduced.
Doelp, W. L., Jr.↗
An improved method for obtaining a normalized junction temperature for semiconductors: A concept
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining corresponding failure rate from graph.
Trivedi, S. N.↗
Laser scanner for testing semiconductor chips
Individual ''fingerprint'' signals are produced when system photoexcites chips. ''Fingerprints'' are analyzed for characteristics associated with defects, including many not visible to the naked eye. Electromagnetic radiation photogenerates free electrons and holes in semiconductor chip. These carriers produce electrical signals at terminals. Signals vary depending on what defects are present.
Hall, T. C.↗
Improvement of screening methods for silicon planar semiconductor devices
The results of the program for the development of a more sensitive method for selecting silicon planar semiconductor devices for long life applications are reported. The manufacturing technologies (MOS and Bipolar) are discussed along with the screening procedures developed as a result of the tests and evaluations, and the effectiveness of the MOS and Bilayer screening procedures are evaluated.
Berger, W. M.↗