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At least 937 records · Page 52

All sources NASA NTRS DOE OSTI

NASA NTRS1957

Flight Investigation of the Effectiveness of an Automatic Aileron Trim Control Device for Personal Airplanes

A flight investigation to determine the effectiveness of an automatic aileron trim control device installed in a personal airplane to augment the apparent spiral stability has been conducted. The device utilizes a rate-gyro sensing element in order to switch an on-off type of control that operates the ailerons at a fixed rate through control centering springs. An analytical study using phase-plane and analog-computer methods has been carried out to determine a desirable method of operation for the automatic trim control.

Phillips, William H↗

NASA NTRS1948

Wind-tunnel Investigation of High-lift and Stall-control Devices on a 37 Degree Sweptback Wing of Aspect Ratio 6 at High Reynolds Numbers

Results are presented of an investigation in the Langley 19-foot pressure tunnel of the longitudinal characteristics of a semispan model wing having 37 degrees sweepback of the leading edge, an aspect ratio of 6, and NACA 641-212 airfoil section perpendicular to the 27-percent-chord line. Several types of stall-control devices including extensible round-nose leading-edge flaps, a leading-edge slat, and a drooped leading edge were investigated; partial- and full-span trailing-edge split and double slotted flaps were also tested. In addition, various combinations of the aforementioned leading- and trailing-edge flaps were investigated. The tests covered a range of Reynolds numbers between 2.00 x 10(6) and 9.35 x 10(6). The wing with or without trailing-edge splity of double slotted flap was longitudinally unstable near maximum lift due to tip stalling. The addition of an outboard half-span leading-edge flap or a leading-edge slat to the plain wing or wing with inboard half-span split flaps eliminated tip stalling and resulted in stable moment variations at the stall. The drooped leading edge, on the other hand, was only effective when used in conjunction with an upper-surface fence. The combination of an outboard leading-edge device and inboard half-span double slotted flap resulted in an undesirable loop in the pitching-moment curve near maximum lift in spite of an inboard stall. The loop is attributed to the section characteristics of the double slotted flap. Air-flow surveys behind the wing indicated that a suitably placed horizontal tail would eliminate the loop in the moment curve.

Koven, William↗

NASA NTRS1994

Metal-Film Hall-Effect Devices

Large positive and negative Hall coefficients achievable. Family of Hall-effect devices made from multilayer metal films instead of semiconductor materials. Metal films easier to fabricate; formed by deposition on variety of substrates, and leads readily attached to them. Fabricated with larger areas, potentially more reliable, and less affected by impurities. Also used to measure magnetic fields. Devices especially useful at low temperatures.

Peters, Palmer N.↗

NASA NTRS1994

Partial-Thickness Grooves In A VBL Memory Device

Bias magnetic fields tailored to match those needed elsewhere in device. Grooves through part of thickness of magnetic garnet storage layer of vertical-Bloch-line (VBL) memory device used to confine magnetic bubble and stripe domains in desired storage areas. VBL-memory concept described in "Vertical-Bloch-Line Memory" (NPO-18467).

Katti, Romney R.↗

NASA NTRS1994

Devices Relaminarize Turbulent Flows On Swept Wings

Drag reduced economically. Devices are small discontinuities built into surfaces of wings. Range from angled to straight, saw-toothed to square, and with and without concave steps. Saw-toothed configuration built into wings of future airplanes. Square devices machined separately and retrofitted to existing supersonic airplanes. Designed to reduce total airplane drag by changing high-drag turbulent wing-leading-edge flow to low-drag laminar wing-leading-edge flow. Used primarily on high-speed airplanes, but also useful in reducing drag in other applications.

Creel, Theodore R.↗

NASA NTRS1994

Underwing Compression Vortex-Attenuation Device

Underwing compression vortex-attenuation device designed to provide method for attenuating lift-induced vortex generated by wings of airplane. Includes compression panel attached to lower surface of wing, facing perpendicular to streamwise airflow. Concept effective on all types of aircraft. Causes increase in wing lift rather than reduction when deployed. Device of interest to aircraft designers and enhances air safety in general.

James C Patterson Jr.↗

NASA NTRS1993

Underwing compression vortex attenuation device

A vortex attenuation device is presented which dissipates a lift-induced vortex generated by a lifting aircraft wing. The device consists of a positive pressure gradient producing means in the form of a compression panel attached to the lower surface of the wing and facing perpendicular to the airflow across the wing. The panel is located between the midpoint of the local wing cord and the trailing edge in the chord-wise direction and at a point which is approximately 55 percent of the wing span as measured from the fuselage center line in the spanwise direction. When deployed in flight, this panel produces a positive pressure gradient aligned with the final roll-up of the total vortex system which interrupts the axial flow in the vortex core and causes the vortex to collapse.

Patterson, James C., Jr.↗

NASA NTRS1993

Automatic locking orthotic knee device

An articulated tang in clevis joint for incorporation in newly manufactured conventional strap-on orthotic knee devices or for replacing such joints in conventional strap-on orthotic knee devices is discussed. The instant tang in clevis joint allows the user the freedom to extend and bend the knee normally when no load (weight) is applied to the knee and to automatically lock the knee when the user transfers weight to the knee, thus preventing a damaged knee from bending uncontrollably when weight is applied to the knee. The tang in clevis joint of the present invention includes first and second clevis plates, a tang assembly and a spacer plate secured between the clevis plates. Each clevis plate includes a bevelled serrated upper section. A bevelled shoe is secured to the tank in close proximity to the bevelled serrated upper section of the clevis plates. A coiled spring mounted within an oblong bore of the tang normally urges the shoes secured to the tang out of engagement with the serrated upper section of each clevic plate to allow rotation of the tang relative to the clevis plate. When weight is applied to the joint, the load compresses the coiled spring, the serrations on each clevis plate dig into the bevelled shoes secured to the tang to prevent relative movement between the tang and clevis plates. A shoulder is provided on the tang and the spacer plate to prevent overextension of the joint.

Weddendorf, Bruce C.↗

NASA NTRS1994

Planar varactor frequency multiplier devices with blocking barrier

The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

Lieneweg, Udo↗

NASA NTRS1993

Conceptual design of a device to measure hand swelling in a micro-gravity environment

In the design of pressurized suits for use by astronauts in space, proper fit is an important consideration. One particularly difficult aspect of the suit design is the design of the gloves. If the gloves of the suit do not fit properly, the grip strength of the astronaut can be decreased by as much as fifty percent. These gloves are designed using an iterative process and can cost over 1.5 million dollars. Glove design is further complicated by the way the body behaves in a micro-gravity environment. In a micro-gravity setting, fluid from the lower body tends to move into the upper body. Some of this fluid collects in the hands and causes the hands to swell. Therefore, a pair of gloves that fit well on earth may not fit well when they are used in space. The conceptual design process for a device which can measure the swelling that occurs in the hands in a micro-gravity environment is described. This process involves developing a specifications list and function structure for the device and generating solution variants for each of the sub functions. The solution variants are then filtered, with the variants that violate any of the specifications being discarded. After acceptable solution variants are obtained, they are combined to form design concepts. These design concepts are evaluated against a set of criteria and the design concepts are ranked in order of preference. Through this process, the two most plausible design concepts were an ultrasonic imaging technique and a laser mapping technique. Both of these methods create a three dimensional model of the hand, from which the amount of swelling can be determined. In order to determine which of the two solutions will actually work best, a further analysis will need to be performed.

Hysinger, Christopher L.↗

NASA NTRS1994

Thermocapillary flow with evaporation and condensation and its effect on liquid retention in low-G fluid acquisition devices

The steady motion, thermal and free surface behavior of a volatile, wetting liquid in microgravity are studied using scaling and numerical techniques. The objective is to determine whether the thermocapillary and two-phase convection arising from thermodynamic nonequilibrium along the porous surfaces of spacecraft liquid acquisition devices could cause the retention failures observed with liquid hydrogen and heated vapor pressurant. Why these devices seem immune to retention loss when pressurized with heated helium or heated directly through the porous structure was also examined. Results show that highly wetting fluids exhibit large negative and positive dynamic pressure gradients towards the meniscus interline when superheated and subcooled, respectively. With superheating, the pressure variation and recoil force arising from liquid/vapor phase change exert the same influence on surface morphology and promote retention. With subcooling, however, the pressure distribution produces a suction that degrades mechanical equilibrium of the surface. This result indicates that thermocapillary-induced deformation arising from subcooling and condensation is the likely cause for retention loss. In addition, increasing the level of nonequilibrium by reducing accommodation coefficient suppresses deformation and explains why this failure mode does not occur in instances of direct screen heating or pressurization with a heated inert gas.

Schmidt, George R.↗

NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗

NASA NTRS1994

Tactile display device using an electrorheological fluid

A tactile display device utilizes an electrorheological fluid to activate a plurality of tactile dots. A voltage is selectively produced uniformly across an electrorheological fluid flowing between a common ground electrode and a plurality of conductive dot electrodes, thereby producing an increase in the fluid's viscosity to the extent that fluid flow between the two electrodes is restricted. The flow restriction produces a build-up of electrorheological fluid in a corresponding dot actuator chamber. The resulting pressure increase in the chamber displaces an elastic diaphragm fixed to a display surface to form a lump which can be perceived by the reader as one dot in a Braille character cell. A flow regulation system provides a continually pressurized flow system and provides for free flow of the electrorheological fluid through the plurality of dot actuator chambers when they are not activated. The device is adaptable to printed circuit techniques and can simultaneously display tactile dots representative of a full page of Braille characters stored on a medium such as a tape cassette or to display tactile dots representative of non-Braille data appearing on a computer monitor or contained on another data storage medium. In an alternate embodiment, the elastic diaphragm drives a plurality of spring-loaded pins provided with positive stops to maintain consistent displacements of the pins in both their actuated and nonactuated positions.

Garner, H. Douglas↗

NASA NTRS1994

Chemical beam epitaxy for high efficiency photovoltaic devices

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Bensaoula, A.↗

NASA NTRS1995

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

Bautista, J. J.↗

NASA NTRS1994

Performance issues for iterative solvers in device simulation

Due to memory limitations, iterative methods have become the method of choice for large scale semiconductor device simulation. However, it is well known that these methods still suffer from reliability problems. The linear systems which appear in numerical simulation of semiconductor devices are notoriously ill-conditioned. In order to produce robust algorithms for practical problems, careful attention must be given to many implementation issues. This paper concentrates on strategies for developing robust preconditioners. In addition, effective data structures and convergence check issues are also discussed. These algorithms are compared with a standard direct sparse matrix solver on a variety of problems.

Fan, Qing↗

NASA NTRS1992

Materials, structures, and devices for high-speed electronics

Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

Woollam, John A.↗

NASA NTRS1995

Device and method for screening crystallization conditions in solution crystal growth

A device and method for detecting optimum protein crystallization conditions and for growing protein crystals in either 1g or microgravity environments comprising a housing, defining at least one pair of chambers for containing crystallization solutions is presented. The housing further defines an orifice therein for providing fluid communication between the chambers. The orifice is adapted to receive a tube which contains a gelling substance for limiting the rate of diffusive mixing of the crystallization solutions. The solutions are diffusively mixed over a period of time defined by the quantity of gelling substance sufficient to achieve equilibration and to substantially reduce density driven convection disturbances therein. The device further includes endcaps to seal the first and second chambers. One of the endcaps includes a dialysis chamber which contains protein solution in which protein crystals are grown. Once the endcaps are in place, the protein solution is exposed to the crystallization solutions wherein the solubility of the protein solution is reduced at a rate responsive to the rate of diffusive mixing of the crystallization solutions. This allows for a controlled approach to supersaturation and allows for screening of crystal growth conditions at preselected intervals.

Carter, Daniel C.↗