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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

High-Voltage 1-kW dc/dc Converter Developed for Low-Temperature Operation

Recently, Lewis developed and demonstrated a high-voltage, 1-kW dc/dc converter that operates from room temperature to -184 C. A power supply designed for use in a NASA ion beam propulsion system was utilized as a starting point for the design of a low- (wide-) temperature dc/dc converter. For safety, we decided to halve the output voltage and power level, so the converter was designed for an 80-Vdc input and a 550-Vdc output at 1 kW.

Patterson, Richard L.↗
DOE OSTI2022

III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop

We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient tunnel junctions. Due to the polarization field alignment in the (In,Ga)N/GaN interface with the p-down orientation, the electrostatic depletion barrier for electron and hole injection is reduced when compared with the conventional p-up LEDs. A single (In,Ga)N/GaN heterostructure quantum well active region with a GaN homojunction tunnel junction exhibited very low forward operating voltage of 2.42 V at 20 A/cm 2 with a peak electroluminescence emission wavelength of 520 nm for current densities above 100 A/cm 2 . Furthermore, the bottom tunnel junction with minimal voltage drop enabled excellent hole injection into the bottom p-GaN layer.

36 MATERIALS SCIENCE↗
NASA NTRS1974

A high voltage power supply for the AE-C and D low energy electron experiment

A description is given of the electrical and mechanical design and operation of high voltage power supplies for space flight use. The supply was used to generate the spiraltron high voltage for low energy electron experiment on AE-C and D. Two versions of the supply were designed and built; one design is referred to as the low power version (AE-C) and the other as the high power version (AE-D). Performance is discussed under all operating conditions.

Gillis, J. A.↗
DOE OSTI2025

Optimization of catholyte for halide-based all-solid-state batteries

Halide solid electrolytes gain significant attention due to their high ionic conductivity, low processing temperature, dry air compatibility, and high-voltage stability. However, low cathode active material (CAM) loading in the composite cathode constrains the realization of high energy density for halide-based all-solid-state batteries. In this study, three halide materials, raw Li 3 YBrCl 5 (LYBC-R, <30μm), milled LYBC (LYBC-M, <5 μm) and freeze-dried Li 3 InCl 6 (LIC, <500 nm), were used as catholytes, combined with LYBC-M as the electrolyte and LiIn alloy as the anode. The CAM:catholyte ratio was investigated as well as stack pressure and operating temperature. Our study demonstrates that particle size of the catholyte plays an important role only for high CAM loading or high C-rate cycling. At moderate CAM loading (65 and 70wt% LiNi 0.83 Mn 0.06 Co 0.11 O 2 ) and 0.1 C-rate, all the three catholytes perform well, providing initial discharge capacities >177 mAh/g. At high CAM loading (85wt%) and 0.1 C-rate, a cathode with the nano-scale LIC catholyte provides discharge capacity of 175 mAh/g, while the larger particle size catholytes suffer significantly reduced capacity. Both LYBC and LIC catholytes provided capacity retention >80% after 200 cycles at 0.5C. These results imply that cathode particle size is critically important for performance at high CAM loading. Furthermore, both electrolyte and cathode were tape cast to scale up size and prepare realistic layer thicknesses. A small amount of binder was used in both layers, to balance the electrochemical performance and mechanical properties. Further, the discharge capacity of a tape cell was 152mA h/g at 0.1C with a capacity retention of 81.8% after 20 cycles at 0.5C. The results demonstrate the excellent performance of LYBC as an electrolyte, and provide guidance for halide-based cathode design.

25 ENERGY STORAGE↗
NASA NTRS2020

High-Resistivity Measurement System for Spacecraft Dielectrics

- Volume resistivity is a key material property needed for assessing the risk of electrostatic discharge (ESD) due to spacecraft charging. We have developed a volume resistivity test system capable of measuring volume resistivity ≥1019 Ω·cm in vacuum and at cryogenic temperatures. Key components of this new setup include a custom test fixture and very low noise battery voltage supply.

Chave, Robert↗
DOE OSTI2021

Using Distributed Dynamic Voltage Restorers to Improve the Frequency Stability of Low-Inertia Networked Microgrids

This paper elucidates the novel concept of using distributed dynamic voltage restorers (DVRs), which are traditionally used to compensate for voltage sags, to improve the frequency stability of low-inertia networked microgrids. During frequency transients, the distributed DVRs rapidly regulate load voltages within an acceptable range, resulting in a fast change of load power consumption and helping improve frequency stability. To enable large-scale network simulation, a phasor-based model of DVRs is developed and validated against real data from a commercially available device. Finally, simulation results of a modified IEEE 123-node test feeder that comprises three microgrids and six DVRs verify the effectiveness of the proposed method.

Du, Wei↗
NASA NTRS1989

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Lichtenberger, A. W.↗
NASA NTRS2011

High-Tc Superconducting Bolometer Noise Measurement Using Low Noise Transformers - Theory and Optimization

Care must always be taken when performing noise measurements on high-Tc superconducting materials to ensure that the results are not from the measurement system itself. One situation likely to occur is with low noise transformers. One of the least understood devices, it provides voltage gain for low impedance inputs (< 100 ), e.g., YBaCuO and GdBaCuO thin films, with comparatively lower noise levels than other devices for instance field effect and bipolar junction transistors. An essential point made in this paper is that because of the complex relationships between the transformer ports, input impedance variance alters the transformer s transfer function in particular, the low frequency cutoff shift. The transfer of external and intrinsic transformer noise to the output along with optimization and precautions are treated; all the while, we will cohesively connect the transfer function shift, the load impedance, and the actual noise at the transformer output.

Aslam, Shahid↗
DOE OSTI2021

Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La 1– x Sr x CoO 3–δ Films

Much recent attention has focused on the voltage-driven reversible topotactic transformation between the ferromagnetic metallic perovskite (P) SrCoO 3-&delta; and oxygen-vacancy-ordered antiferromagnetic insulating brownmillerite (BM) SrCoO 2.5 . This is emerging as a paradigmatic example of the power of electrochemical gating (using, e.g., ionic liquids/gels), the wide modulation of electronic, magnetic, and optical properties generating clear application potential. SrCoO 3 films are challenging with respect to stability, however, and there has been little exploration of alternate compositions. Here, we present the first study of ion-gel-gating-induced P. BM transformations across almost the entire La 1-x SrxCoO 3 phase diagram (0 ≤ x ≤ 0.70), under both tensile and compressive epitaxial strain. Electronic transport, magnetometry, and operando synchrotron X-ray diffraction establish that voltage-induced P &rarr; BM transformations are possible at essentially all x, including x ≤ 0.50, where both P and BM phases are highly stable. Under small compressive strain, the transformation threshold voltage decreases from approximately +2.7 V at x = 0 to negligible at x = 0.70. Both larger compressive strain and tensile strain induce further threshold voltage lowering, particularly at low x. The P &rarr; BM threshold voltage is thus tunable, via both composition and strain. At x = 0.50, voltage-controlled ferromagnetism, transport, and optical transmittance are then demonstrated, achieving Curie temperature and resistivity modulations of similar to 220 K and at least 5 orders of magnitude, respectively, and enabling estimation of the voltage-dependent Co valence. The results are analyzed in the context of doping- and strain-dependent oxygen vacancy formation energies and diffusion coefficients, establishing that it is thermodynamic factors, not kinetics, that underpin the decrease in the threshold voltage with x, that is, with increasing formal Co valence. These findings substantially advance the practical and mechanistic understanding of this voltage-driven transformation, with fundamental and technological implications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1966

Dual-voltage power supply has increased efficiency

Simple circuit provides two different dc output voltages from an ac source. It employs a full-wave rectifier connected to two passive branches from which the separate dc voltages are taken. The outputs have low ripple and good voltage regulation.

Sturman, J. C.↗
NASA NTRS1985

Commutating Permanent-Magnet Motors At Low Speed

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

Dolland, C.↗
NASA NTRS1978

Pulse ignition characterization of mercury ion thruster hollow cathode using an improved pulse ignitor

An investigation of the high voltage pulse ignition characteristics of the 8-cm mercury ion thruster neutralizer cathode identified a low rate of voltage rise and long pulse duration as desirable factors for reliable cathode starting. Cathode starting breakdown voltages were measured over a range of mercury flow rates and tip heater powers for pulses with five different rates of voltage rise. Breakdown voltage requirements for the fastest rising pulse (2.5 to 3.0 kV/microsec) were substantially higher (2 kV or more) than for the slowest rising pulse (0.3 to 0.5 kV/microsec) for the same starting conditions. The paper also describes an improved, low impedance pulse ignitor circuit which reduces power losses and eliminates problems with control and packaging associated with earlier designs.

Wintucky, E. G.↗
NASA NTRS1978

Pulse ignition characterization of mercury ion thruster hollow cathode using an improved pulse ignitor

An investigation of the high voltage pulse ignition characteristics of the 8 cm mercury ion thruster neutralizer cathode identified a low rate of voltage rise and long pulse duration as desirable factors for reliable cathode starting. Cathode starting breakdown voltages were measured over a range of mercury flow rates and tip heater powers for pulses with five different rates of voltage rise. Breakdown voltage requirements for the fastest rising pulse (2.5 to 3.0 kV/micro sec) were substantially higher (2 kV or more) than for the slowest rising pulse (0.3 to 0.5 kV/micro sec) for the same starting conditions. Also described is an improved, low impedance pulse ignitor circuit which reduces power losses and eliminates problems with control and packaging associated with earlier designs.

Wintucky, E. G.↗
NASA NTRS1990

High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

Frankel, Michael Y.↗
NASA NTRS1988

A high voltage power converter for space astronomy applications

A dc-dc low-power, high-voltage converter for use in space is described which furnishes a commandable, low-noise dc output in the range of 0 to -7500 V. The converter is suitable for biasing of detectors commonly employed in space astronomy, microchannel plates, photomultipliers, and gas discharge detectors. The converter's reliability has been demonstrated by accelerated life testing under thermal vacuum. The electrical and mechanical design, packaging, layout and fabrication techniques, and tests employed are described.

Ray, David C.↗