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At least 919 records · Page 51

Optical communication with semiconductor laser diodes

Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

Davidson, F.↗

An advanced microcomputer design for processing of semiconductor materials

In the Get Away Special 330 payload two germanium samples doped with gallium will be processed. The aim of the experiments is to create a planar solid/liquid interface, and to study the breakdown of this interface as the crystal growth rate increases. For the experiments a gradient furnace was designed which is heated by resistive heaters. Cooling is provided by circulating gas from the atmosphere in the cannister through cooling channels in the furnace. The temperature along the sample are measured by platinum/rhodium thermocouples. The furnace is controlled by a microcomputer system, based upon the processor 80C88. A data acquisition system is integrated into the system. In order to synchronize the different actions in time, a multitask manager is used.

Bjoern, L.↗

Real time thermal imaging of high temperature semiconductor melts

A real time thermal imaging system with temperature resolution better than + or - 1 C and spatial resolution of better than 0.5 mm was developed and applied to the analysis of melt surface thermal field distributions in both Czochralski and liquid encapsulated Czochralski (LEC) growth configurations. The melt is viewed in near normal incidence by a high resolution charge coupled device camera to which is attached a very narrow bandpass filter. The resulting image is digitized and processed using a pipelined pixel processor operating at an effective 40 million operations per second thus permitting real time high frequency spatial and temporal filtering of the high temperature scene. A multi-pixel averaging algorithm was developed which permits localized, low noise sensing of temperature variations at any location in the hot zone as a function of time. This signial is used to implement initial elements of a feedforward growth control scheme which is aimed at reducing disturbances to the melt caused by the batch nature of the growth process. The effect of magnetic melt stabilization on radial melt temperature distributions was measured using this technique. Problems associated with residual internal reflections and non-optimized path geometry are discussed.

Wargo, Michael J.↗

Vacancy formation energies in II-VI semiconductors

Cation and anion vacancy formation energies are calculated for HgTe, ZnTe, CdTe, and their dilute alloys. Harrison's tight-bonding theory is extended to a cluster embedded in an extended crystal. Only neutral vacancies have been considered, and two final states for the removed atom have been addressed: a free atom in vacuum and an atom on an ideal (111) surface.

Berding, M. A.↗

Electrochemical studies of thin films of conducting polymers and conducting polymer composites deposited on metal and semiconductor electrodes

Electrochemical studies indicate that poly(Isothianaphthene) or PITN, can be p-doped only. Electrochemical properties of PITN and Nafion-PITN in acetonitrile solutions containing tetra-phenyl Phosphonium chloride as supporting electrolyte are compared. In both cases, the electrochemical behavior of thin films are different from that of thick films. In addition, Nafion does not seem to alter the electrochemical properties of PITN. Cyclic voltammetric and chronocoulometric measurements were made to compute the diffusion coefficient of the counter ions. Electrochemical behavior of both PITN and Nafion-PITN in acetonitrile solution containing different counter ions are described. PITN, when electrochemically deposited, apparently neither passivates surface states present nor forms ohmic contacts with p-Si or p(+)Si single-crystal electrodes.

Nagasubramanian, G.↗

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.↗

Ballistic transport in II-VI semiconductor compounds and alloys

Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.

Berding, M. A.↗

Internal temperature gradient of alloy semiconductor melts from interrupted growth experiments

Interrupted growth experiments on Hg(0.8)Cd(0.2)Se alloys were performed in an attempt to estimate the actual internal temperature gradient in the melt during directional solidification. The results have been analyzed in terms of a theoretical model which assumes an axial composition profile characteristic of diffusion controlled solute redistribution during growth. A comparison of the calculated and measured values suggests a reduction in the applied (empty furnace) temperature gradient by about a factor of three. Values of the interface segregation coefficient (k) determined from the phase diagram, predict values of solute concentration build up in the solid during growth interruptions which are inconsistent with measured results. It appears that the k values used tend to underestimate the actual k values for higher alloy compositions and overestimate k for the lower alloy compositions.

Andrews, R. N.↗

The use of molten salts as physical models for the study of solidification in metals and semiconductors

It is presently noted that molten salts possess attributes rendering them attractive as physical models of cast metals in solidification studies. Molten alkali halides have an approximately correct Prandtl number for this modeling of metallic melts, and are transparent to visible light. Attention is given to solidification in the LiCl-KCl system, in order to determine whether such phenomena as solute rejection can be observed and characterized through the application of laser schlieren imaging.

Koziol, Jurek K.↗

Diffusion length measurement in bulk and epitaxially grown III-V semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic technique used was charge collection microscopy, also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line-scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended-generation and point-generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗

Stabilizing Semiconductor Devices With Hydrogen

Damage by radiation healed rapidly. Feature provides continuous, rapid recovery of devices from degradation caused by hot electrons, photons, and ionizing radiation. Several candidate sites for palladium film catalysts, inserted during manufacture as integral parts of devices. Paladium films made by evaporation, sputtering, or chemical-vapor deposition. If additional storage required, thick layer of palladium plated on inside of package surrounding device. Hydrogen stored by exposing palladium to hydrogen gas just before package sealed hermetically.

Overhauser, Albert W.↗

Probes and monitors for the study of solidification of molten semiconductors

The purpose is to examine solidification in the LiCl-KCl system to determine if phenomena such as solute rejection can be obseved by laser schlieren imaging. Molten salts have attributes that make them attractive as physical models in solidification studies. With optical techniques of investigation such as schlieren imaging, it is possible to study fluid flow phenomena in molten salts and to watch the trajectory of the solid-liquid interface.

Sadoway, D. R.↗

Linear response theory for annealing of radiation damage in semiconductor devices

A theoretical study of the radiation/annealing response of MOS ICs is described. Although many experiments have been performed in this field, no comprehensive theory dealing with radiation/annealing response has been proposed. Many attempts have been made to apply linear response theory, but no theoretical foundation has been presented. The linear response theory outlined here is capable of describing a broad area of radiation/annealing response phenomena in MOS ICs, in particular, both simultaneous irradiation and annealing, as well as short- and long-term annealing, including the case when annealing is nearing completion. For the first time, a simple procedure is devised to determine the response function from experimental radiation/annealing data. In addition, this procedure enables us to study the effect of variable temperature and dose rate, effects which are of interest in spaceflight. In the past, the shift in threshold potential due to radiation/annealing has usually been assumed to depend on one variable: the time lapse between an impulse dose and the time of observation. While such a suggestion of uniformity in time is certainly true for a broad range of radiation annealing phenomena, it may not hold for some ranges of the variables of interest (temperature, dose rate, etc.). A response function is projected which is dependent on two variables: the time of observation and the time of the impulse dose. This dependence on two variables allows us to extend the theory to the treatment of a variable dose rate. Finally, the linear theory is generalized to the case in which the response is nonlinear with impulse dose, but is proportional to some impulse function of dose. A method to determine both the impulse and response functions is presented.

Litovchenko, Vitaly↗

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.

Nichols, Donald K.↗

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗

Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

Beheim, Glenn↗

Incoherent GaAlAs/GaAs semiconductor laser arrays

The fabrication of an incoherent laser array is reported. The main features of the arrays are low threshold index-guided laser elements, single-lobe far-field pattern, low astigmatism, low current operation, dense packing, and total electrical and optical isolation. With further development, this device should have applications in multihead optical-disk reading and writing, multifiber optical communications, and line-of-sight communications.

Hwang, C. J.↗

Monte Carlo studies of liquid semiconductor surfaces - Si and Ge

The liquid-vapor interface of Si and Ge, and of Si doped with impurities is studied using the empirical Stillinger-Weber two- and three-body potentials. The surface tension of the pure elements is calculated by use of a direct evaluation of the free energy required to create the surface. For Si, both the surface tension and its temperature derivative are in good agreement with experiment. To within numerical accuracy, the free surfaces of both Si and Ge have a monotonically decreasing density, with a 10-90 percent surface width of about 2.2 A in both cases. When large and small model impurities are introduced into pure liquid Si, they are found in the simulations to migrate, respectively, towards the surface and away from the surface. This behavior is consistent with the interpretation that impurities with atoms larger than Si tend to lower the surface tension.

Wang, Z. Q.↗