NASA NTRS · 19890000275
Stabilizing Semiconductor Devices With Hydrogen
Abstract
Damage by radiation healed rapidly. Feature provides continuous, rapid recovery of devices from degradation caused by hot electrons, photons, and ionizing radiation. Several candidate sites for palladium film catalysts, inserted during manufacture as integral parts of devices. Paladium films made by evaporation, sputtering, or chemical-vapor deposition. If additional storage required, thick layer of palladium plated on inside of package surrounding device. Hydrogen stored by exposing palladium to hydrogen gas just before package sealed hermetically.
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Overhauser, Albert W., Maserjian, Joseph. 1989-06-01. Stabilizing Semiconductor Devices With Hydrogen. https://ntrs.nasa.gov/citations/19890000275
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