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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Endurance testing of first generation (Block 1) commercial solar cell modules

To determine lifetimes of the first generation (Block 1) commercial solar cell modules used in solar cell arrays, a program was initiated to expose these modules to a range of environments. The conditions endured by these modules encompassed hot and dry, hot and humid, tropical rain forests, sea-air, urban industrial and urban clean. Exposures were for periods up to 1 year. The effect of outdoor exposure on the performance of the modules was determined using current-voltage curves. Short-circuit current (I sub sc) and maximum power (P sub max) were the parameters monitored. In all cases, there was a loss of performance of the modules with outdoor exposure.

Anagnostou, E.↗
NASA NTRS2015

ER-2 High Altitude Solar Cell Calibration Flights

The first flights of the ER-2 solar cell calibration demonstration were conducted during September-October of 2014. Three flights were performed that not only tested out the equipment and operational procedures, but also demonstrated the capability of this unique facility by conducting the first short-circuit measurements on a variety of test solar cells. Very preliminary results of these first flights were presented at the 2014 Space Photovoltaic Research and Technology (SPRAT) Conference in Cleveland, OH shortly following these first flights. At the 2015 Space Power Workshop, a more detailed description of these first ER-2 flights will be presented, along with the final flight data from some of the test cells that were flown and has now been reduced and corrected for ER-2 atmospheric flight conditions. Plans for ER-2 flights during the summer of 2015 will also be discussed.

solar cells↗
NASA NTRS2005

Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

Dhere, Neelkanth G.↗
DOE OSTI2023

Eco–Friendly Solvent Engineered CsPbI 2.77 Br 0.23 Ink for Large–Area and Scalable High Performance Perovskite Solar Cells

The performance of large-area perovskite solar cells (PSCs) has been assessed for typical compositions, such as methylammonium lead iodide (MAPbI 3 ), using a blade coater, slot-die coater, solution shearing, ink-jet printing, and thermal evaporation. However, the fabrication of large-area all-inorganic perovskite films is not well developed. This study develops, for the first time, an eco-friendly solvent engineered all-inorganic perovskite ink of dimethyl sulfoxide (DMSO) as a main solvent with the addition of acetonitrile (ACN), 2-methoxyethanol (2-ME), or a mixture of ACN and 2-ME to fabricate large-area CsPbI 2.77 Br 0.23 films with slot-die coater at low temperatures (40–50 °C). The perovskite phase, morphology, defect density, and optoelectrical properties of prepared with different solvent ratios are thoroughly examined and they are correlated with their respective colloidal size distribution and solar cell performance. Here, the optimized slot-die-coated CsPbI 2.77 Br 0.23 perovskite film, which is prepared from the eco-friendly binary solvents dimethyl sulfoxide:acetonitrile (0.8:0.2 v/v), demonstrates an impressive power conversion efficiency (PCE) of 19.05%. Moreover, the device maintains ≈91% of its original PCE after 1 month at 20% relative humidity in the dark. It is believed that this study will accelerate the reliable manufacturing of perovskite devices.

binary and ternary solvent↗
NASA NTRS1987

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Stupica, John↗
NASA NTRS1986

Space solar cell research: Problems and potential

The value of a passive, maintenance-free, renewable energy source was apparent in the early days of the space program, and the silicon solar cell was pressed into service. Efficiencies of those early space solar arrays were low, and lifetimes shorter than hoped for, but within a decade significant advances had been made in both areas. Better performance was achieved through improvements in silicon single crystal material, better device designs, and a better understanding of the factors that affect the performance of a solar cell in space. Chief among the latter, particularly for the mid-to-high altitude (HEO) and geosynchronous (GEO) orbits, are the effects of the naturally occurring particulate radiation environment. Although not as broadly important to the photovoltaic community at large as increased efficiency, the topic of radiation damage is critically important to use of solar cells in space, and is a major component of the NASA research program in space photovoltaics. A brief overview of some of the opportunities and challenges for space photovoltaic applications is given, and some of the current research directed at achieving high efficiency and controlling radiation damage in space solar cells is discussed.

Flood, D. J.↗
NASA NTRS1985

High-voltage solar-cell chip

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Kapoor, V. J.↗
NASA NTRS2004

High-Temperature Solar Cell Development

The vast majority of satellites and near-earth probes developed to date have relied upon photovoltaic power generation. If future missions to probe environments close to the sun will be able to use photovoltaic power, solar cells that can function at high temperatures, under high light intensity, and high radiation conditions must be developed. For example, the equilibrium temperature of a Mercury surface station will be about 450 C, and the temperature of solar arrays on the proposed "Solar Probe" mission will extend to temperatures as high as 2000 C (although it is likely that the craft will operate on stored power rather than solar energy during the closest approach to the sun). Advanced thermal design principles, such as replacing some of the solar array area with reflectors, off-pointing, and designing the cells to reflect rather than absorb light out of the band of peak response, can reduce these operating temperature somewhat. Nevertheless, it is desirable to develop approaches to high-temperature solar cell design that can operate under temperature extremes far greater than today's cells. Solar cells made from wide bandgap (WBG) compound semiconductors are an obvious choice for such an application. In order to aid in the experimental development of such solar cells, we have initiated a program studying the theoretical and experimental photovoltaic performance of wide bandgap materials. In particular, we have been investigating the use of GaP, SiC, and GaN materials for space solar cells. We will present theoretical results on the limitations on current cell technologies and the photovoltaic performance of these wide-bandgap solar cells in a variety of space conditions. We will also give an overview of some of NASA's cell developmental efforts in this area and discuss possible future mission applications.

Landis, Geoffrey A.↗
NASA NTRS1991

Tunnel junctions for InP-on-Si solar cells

Growing, by metalorganic chemical vapor deposition, a tunnel junction is described, which makes possible and ohmic back contact in an n-on-p InP solar cell on a silicon substrate. The junction between heavily doped layers of p-type InGaAs and n-type InP shows resistance low enough not to affect the performance of these cells. InP solar cells made on n-type Si substrates with this structure were measured with an efficiency of 9.9 percent. Controls using p-type GaAs substrates showed no significant difference in cell performance, indicating that the resistance associated with the tunnel junction is less than about 0.1 ohm/sq cm.

Keavney, C.↗
NASA NTRS1982

Work Station For Inverting Solar Cells

Final work station along walking-beam conveyor of solar-array assembly line turns each pretabbed solar cell over, depositing it back-side-up onto landing pad, which centers cell without engaging collector surface. Solar cell arrives at inverting work station collector-side-up with two interconnect tabs attached to collector side. Cells are inverted so that second soldering operation takes place in plain view of operator. Inversion protects collector from damage when handled at later stages of assembly.

Feder, H.↗
DOE OSTI2026

Incorporating a naphthalene diimide polymer into a fullerene electron-transport layer to improve the fracture energy of perovskite solar cells

By blending a naphthalene diimide polymer into C 60 , we made a solution-processed electron-transport layer (ETL) for perovskite solar cells with fracture energies of 1.25 J m −2 , over 3× higher than that of thermally evaporated C 60 . Fracture energies were measured in a double cantilever beam configuration, and fracture surface images showed a fracture location near the ETL/perovskite interface, indicating a toughening of the interface between the ETL and Ag. We show that this modification to the ETL has no adverse effect on solar cell performance, and highlight the additional benefit of reduced parasitic absorption; a finding relevant for tandem solar cells.

electron transport layer↗
NASA NTRS1997

Solar Cells for Lunar Application

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Freundlich, Alex↗
DOE OSTI2022

Bifacial CdTe Solar Cells with Copper Chromium Oxide Back-Buffer Layer

Bifacial solar cells have the potential to maintain energy output higher than monofacial devices under unfavorable weather conditions. A transparent back-buffer layer which can passivate the interface and improve the minority carrier lifetime is critical in CdTe-based bifacial devices. Herein, solution-processed Cu x Cr y O z as a promising back-buffer for CdTe/CdS solar cells is demonstrated. The carrier lifetimes measured at the front and back of the device are 31.2 and 3.1 ns, respectively, which correspond to an increase of ≈38% and 138%, respectively, compared to the reference device. This dramatic improvement in lifetime results in a 100% increase in short-circuit current measured with backside illumination. The best bifacial device has efficiencies 7.6% and 12.5%, respectively, from back and front illumination, yielding a bifaciality factor of 0.60.

14 SOLAR ENERGY↗
NASA NTRS1980

Solar-cell defect analyzer

Laser-Scanning System pinpoints imperfections in solar cells. Entire solar panels containing large numbers of cells can be scanned. Although technique is similar to use of scanning electron microscope (SEM) to locate microscopic imperfections, it differs in that large areas may be examined, including entire solar panels, and it is not necessary to remove cover glass or encapsulants.

Gauthier, M. K.↗
NASA NTRS1984

GaAs and 3-5 compound solar cells status and prospects for use in space

Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

Flood, D. J.↗
NASA NTRS1987

Recombination imaging of III-V solar cells

An imaging technique based on the radiative recombination of minority carriers in forward-biased solar cells has been developed for characterization of III-V solar cells. When used in mapping whole wafers, it has helped identify three independent loss mechanisms (broken grid lines, shorting defects, and direct-to-indirect bandgap transitions), all of which resulted in lower efficiencies. The imaging has also led to improvements in processing techniques to reduce the occurrence of broken gridlines as well as surface defects. The ability to visualize current mechanisms in solar cells is an intuitive tool which is powerful in its simplicity.

Virshup, G. F.↗
NASA NTRS1986

The voltage threshold for arcing for solar cells in LEO: Flight and ground test results

Ground and flight results of solar cell arcing in low Earth orbit (LEO) conditions are compared and interpreted. It is shown that an apparent voltage threshold for arcing may be produced by a strong power law dependence of arc rate on voltage, combined with a limited observation time. The change in this apparent threshold with plasma density is a reflection of the density dependence of the arc rate. A nearly linear dependence of arc rate on density is inferred from the data. A real voltage threshold for arcing for 2 by 2 cm solar cells may exist however, independent of plasma density, near -230 V relative to the plasma. Here, arc rates may change by more than an order of magnitude for a change of only 30 V in array potential. For 5.9 by 5.9 solar cells, the voltage dependence of the arc rate is steeper, and the data are insufficient to indicate the existence of an arcing increased by an atomic oxygen plasma, as is found in LEO, and by arcing from the backs of welded-through substrates.

Ferguson, D. C.↗
NASA NTRS1986

The voltage threshold for arcing for solar cells in Leo - Flight and ground test results

Ground and flight results of solar cell arcing in low earth orbit (LEO) conditions are compared and interpreted. It is shown that an apparent voltage threshold for arcing may be produced by a storage power law dependence of arc rate on voltage, combined with a limited observation time. The change in this apparent threshold with plasma density is a reflection of the density dependence of the arc rate. A nearly linear dependence of arc rate on density is inferred from the data. A real voltage threshold for arcing for 2 by 2 cm solar cells may exist however, independent of plasma density, near -230 V relative to the plasma. Here, arc rates may change by more than an order of magnitude for a change of only 30 V in array potential. For 5.9 by 5.9 solar cells, the voltage dependence of the arc rate is steeper, and the data are insufficient to indicate the existence of an arcing increased by an atomic oxygen plasma, as is found in LEO, and by arcing from the backs of welded-through substrates.

Ferguson, Dale C.↗