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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Substrate decomposition in galvanic displacement reaction: Contrast between gold and silver nanoparticle formation

We have investigated substrate decomposition during formation of silver and gold nanoparticles in galvanic displacement reaction on germanium surfaces. Silver and gold nanoparticles were synthesized by electroless deposition on sputter coated germanium thin film (∼ 200 nm) grown initially on silicon substrate. The nanoparticles formation and the substrate corrosion were studied using scanning transmission electron microscopy (STEM) and the energy dispersive X-ray (EDX) spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic, structural, and substrate effect properties of single-layer covalent organic frameworks

Recently synthesized two-dimensional covalent organic frameworks (COFs) exhibit high surface area, large pore size, and unique structural architectures, making them promising materials for various energy applications. Here, a total of nine COFs structures, including two deposited on a hexagonal boron nitride substrate, are investigated using density functional theory, quasi-particle many-body theory within the GW approximation, and an image charge model. The structures considered belong to two major families (thiophene-based COF-n (T-COF-n) and tetrakis (4-aminophenyl) porphyrin-x (TAPP-x)) differing from the presence of B—O or C=N linkers. While T-COF-n structures are shown to constitute planar networks, TAPP-x systems can display non-negligible corrugation due to the out-of-plane rotation of phenyl rings. We find that the electronic properties do not differ significantly when altering the chain molecules within each family. Many-body effects are shown to lead to large band-gap increase while the presence of the substrate yields appreciable reductions of the gaps, due to substrate polarization effects.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A reference LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.

36 MATERIALS SCIENCE↗
DOE OSTI2015

In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

Nitride wide-band-gap semiconductors are used to make high power electronic devices or efficient light sources. The performance of GaN-based devices is directly linked to the initial AlN buffer layer. During the last twenty years of research on nitride growth, only few information on the AlN surface quality have been obtained, mainly by ex-situ characterization techniques. Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface of AlN(0001) thin films grown on Si(111) and 4H-SiC(0001) substrates has been characterized. These experiments give access to a quantitative determination of the density of screw and edge dislocations at the surface. The layers were also characterized by ex-situ SEM to observe the largest defects such as relaxation dislocations and hillocks. The influence of the growth parameters (substrate temperature, growth speed, III/V ratio) and of the initial substrate preparation on the dislocation density was also investigated. On Si(111), the large in-plane lattice mismatch with AlN(0001) (19%) induces a high dislocation density ranging from 6 to 12×10{sup 10}/cm{sup 2} depending on the growth conditions. On 4H-SiC(0001) (1% mismatch with AlN(0001)), the dislocation density decreases to less than 10{sup 10}/cm{sup 2}, but hillocks appear, depending on the initial SiC(0001) reconstruction. The use of a very low growth rate of 10 nm/h at the beginning of the growth process allows to decrease the dislocation density below 2 × 10{sup 9}/cm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Epitaxial Ni-Mn-Ga-Co thin films on PMN-PT substrates for multicaloric applications

Multicaloric stacks consisting of a magnetocaloric film on a piezoelectric substrate promise improved caloric properties as the transition temperature can be controlled by both magnetic and electric fields. We present epitaxially grown magnetocaloric Ni-Mn-Ga-Co thin films on ferroelectric Pb(Mg{sub 1/3}Nb{sub 2/3}){sub 0.72}Ti{sub 0.28}O{sub 3} substrates. Structure and microstructure of two samples, being in the austenitic and martensitic state at room temperature, are investigated by X-ray diffraction in two- and four-circle geometry and by atomic force microscopy. In addition, high temperature magnetometry was performed on the latter sample. The combination of these methods allows separating the influence of epitaxial growth and martensitic transformation. A preferential alignment of twin boundaries is observed already in the as-deposited state, which indicates the presence of prestress, without applying an electric field to the substrate. A temperature-magnetic field phase diagram is presented, which demonstrates the inverse magnetocaloric effect of the epitaxial Ni-Mn-Ga-Co film.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Highly reflective polymeric substrates functionalized utilizing atomic layer deposition

Reflective surfaces are one of the key elements of solar plants to concentrate energy in the receivers of solar thermal electricity plants. Polymeric substrates are being considered as an alternative to the widely used glass mirrors due to their intrinsic and processing advantages, but optimizing both the reflectance and the physical stability of polymeric mirrors still poses technological difficulties. In this work, polymeric surfaces have been functionalized with ceramic thin-films by atomic layer deposition. The characterization and optimization of the parameters involved in the process resulted in surfaces with a reflection index of 97%, turning polymers into a real alternative to glass substrates. The solution we present here can be easily applied in further technological areas where seemingly incompatible combinations of polymeric substrates and ceramic coatings occur.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tunable directional radiation of a dipole inside a cuboid slot on a dielectric substrate

Far-field directional radiation of a single dipole in a cuboid slot is investigated in the presence of a dielectric substrate. Due to strong near field coupling between the dipole source and the surfaces of the slot and the dielectric, the far-field radiation shows strongly anisotropic pattern depending on the dipole radiation energy. By tuning local resonances within the air-slot interface or the substrate-slot interface, highly directional radiation either to free space or to the substrate space can be obtained. In the visible spectrum ranging from 1.2 eV to 3.5 eV, up to 18 fold directivity can be obtained. The up-to-down ratio can be tuned from −7.5 dB to 10 dB. We identify induced eigenmodes responsible for highly unidirectional radiations as a function of the emitter spectrum and slot thickness to assess controllability of radiation power and direction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

The effect of spraying parameters on micro-structural properties of WC-12%Co coating deposited on copper substrate by HVOF process

High Velocity Oxy-Fuel (HVOF) thermal sprayed coatingmade from Tungsten Carbide (WC) isconsidered as one of the most durable materials as wear resistance for industrial applications at room temperature. WC coating offers high wear resistance due to its high hardness and tough matrix imparts. The coating properties strongly depend on thermal spray processing parameters, surface preparation and surface finish. In this investigation, the effect of variousHVOF process parameters was studied on WC coating properties. The WC-12%Co coating was produced on Copper substrate. Prior to coating, theCopper substrate surface was prepared by grit blasting. WC-12%Co coatings were deposited on Coppersubstrates with varying process parameters such as Oxygen gas pressure, Air pressure, and spraying distance. Microstructure of coating was examined using Scanning Electron Microscope (SEM) and characterization of phasespresentin the coating was examined by X-Ray Diffraction (XRD). Microhardness of all coatingswas measured by VickerMicrohardness tester. At low Oxygen Pressure(10.00 bar), high Air pressure (7bar) and short nozzle to substrate distance of 170mm, best coating adhesion and porosity less structure isachieved on Coppersubstrate.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Visibility of two-dimensional layered materials on various substrates

For the investigation of 2D layered materials such as graphene, transition-metal dichalcogenides, boron nitride, and their heterostructures, dedicated substrates are required to enable unambiguous identification through optical microscopy. A systematic study is conducted, focusing on various 2D layered materials and substrates. The simulated colors are displayed and compared with microscopy images. Additionally, the issue of defining an appropriate index for measuring the degree of visibility is discussed. For a wide range of substrate stacks, layer thicknesses for optimum visibility are given along with the resulting sRGB colors. Further simulations of customized stacks can be conducted using our simulation tool, which is available for download and contains a database featuring a wide range of materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Mechanisms of the micro-crack generation in an ultra-thin AlN/GaN superlattice structure grown on Si(110) substrates by metalorganic chemical vapor deposition

We investigate the generation mechanisms of micro-cracks (MCs) in an ultra-thin AlN/GaN superlattice (SL) structure grown on Si(110) substrates by metalorganic chemical vapor deposition. The SL is intended to be used as an interlayer (IL) for relaxing tensile stress and obtaining high-quality crack-free GaN grown on Si substrates. It is found that the MCs can be generated by two different mechanisms, where large mismatches of the lattice constant (LC) and the coefficient of thermal expansion (CTE) play key roles in the issue. Different MC configurations (low-density and high-density MCs) are observed, which are considered to be formed during the different growth stages (SL growth and cooling down processes) due to the LC and the CTE effects. In-situ and ex-situ experimental results support the mechanism interpretations of the MCs generation. The mechanism understanding makes it possible to optimize the SL IL structure for growing high-quality crack-free GaN films on Si substrates for optical and electronic device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A single-cell scraper based on an atomic force microscope for detaching a living cell from a substrate

We describe an atomic force microscope (AFM) manipulator that can detach a single, living adhesion cell from its substrate without compromising the cell's viability. The micrometer-scale cell scraper designed for this purpose was fabricated from an AFM micro cantilever using focused ion beam milling. The homemade AFM equipped with the scraper was compact and standalone and could be mounted on a sample stage of an inverted optical microscope. It was possible to move the scraper using selectable modes of operation, either a manual mode with a haptic device or a computer-controlled mode. The viability of the scraped single cells was evaluated using a fluorescence dye of calcein-acetoxymethl ester. Single cells detached from the substrate were collected by aspiration into a micropipette capillary glass using an electro-osmotic pump. As a demonstration, single HeLa cells were selectively detached from the substrate and collected by the micropipette. It was possible to recultivate HeLa cells from the single cells collected using the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Spreading dynamics of a partially wetting water film atop a MHz substrate vibration

A MHz vibration, or an acoustic wave, propagating in a solid substrate may support the convective spreading of a liquid film. Previous studies uncovered this ability for fully wetting silicon oil films under the excitation of a MHz Rayleigh surface acoustic wave (SAW), propagating in a lithium niobate substrate. Partially wetting de-ionized water films, however, appeared immune to this spreading mechanism. Here, we use both theory and experiment to reconsider this situation and show partially wetting water films may spread under the influence of a propagating MHz vibration. We demonstrate distinct capillary and convective (vibrational/acoustic) spreading regimes that are governed by a balance between convective and capillary mechanisms, manifested in the non-dimensional number θ{sup 3}/We, where θ is the three phase contact angle of the liquid with the solid substrate and We ≡ ρU{sup 2}H/γ; ρ, γ, H, and U are the liquid density, liquid/vapour surface tension, characteristic film thickness, and the characteristic velocity amplitude of the propagating vibration on the solid surface, respectively. Our main finding is that the vibration will support a continuous spreading motion of the liquid film out of a large reservoir if the convective mechanism prevails (θ{sup 3}/We < 1); otherwise (θ{sup 3}/We > 1), the dynamics of the film is governed by the capillary mechanism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Substrate doping: A strategy for enhancing reactivity on gold nanocatalysts by tuning sp bands

We suggest that the reactivity of Au nanocatalysts can be greatly increased by doping the oxide substrate on which they are placed with an electron donor. To demonstrate this, we perform density functional theory calculations on a model system consisting of a 20-atom gold cluster placed on a MgO substrate doped with Al atoms. We show that not only does such substrate doping switch the morphology of the nanoparticles from the three-dimensional tetrahedral form to the two-dimensional planar form, but it also significantly lowers the barrier for oxygen dissociation by an amount proportional to the dopant concentration. At a doping level of 2.78%, the dissociation barrier is reduced by more than half, which corresponds to a speeding up of the oxygen dissociation rate by five orders of magnitude at room temperature. This arises from a lowering in energy of the s and p states of Au. The d states are also lowered in energy, however, this by itself would have tended to reduce reactivity. We propose that a suitable measure of the reactivity of Au nanoparticles is the difference in energy of sp and d states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Transport properties and c/a ratio of V{sub 2}O{sub 3} thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition

We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratios were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗