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At least 91 records · Page 5

Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments

With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors have been increasing the efficiency and reducing the footprint of modern power electronics, and the increased electron mobility of gallium nitride semiconductors have been increasing the switching frequencies of radio frequency circuits. In extreme temperature (>225°C) applications and high radiation environments such as low earth orbit, deep space, and terrestrial nuclear reactors, silicon-based semiconductors degrade rapidly. Wide bandgap semiconductors are poised to disrupt the market for sensing, instrumentation, and communication circuitry in these hazardous environments by increasing the lifetime, safety, and reliability. This report outlines the advantages of using wide bandgap semiconductor materials in extreme temperature and radiation environments.

36 MATERIALS SCIENCE↗

A High-Voltage High-Reliability Scalable Architecture for Electric Vehicle Power Electronics (Final Report)

This project developed and demonstrated new composite converter technologies that lead to high power density (> 20 kW/L) at power levels of 10s of kW, 100s of kW, or possibly higher, with fundamental advances in converter efficiency and Q that lead to substantial increases in mean time to failure (MTTF). These advantages were realized through development of new composite converter topologies that perform buck, boost, or other conversion functions and that are scalable to higher voltage and power levels through sharing of voltage and current stresses among multiple dissimilar partial-power converter modules. The project led to experimental demonstration of a125 kW multifunction electric vehicle power conversion system having in-creased dc bus voltage (950 V nominal, 1200 V peak) that interfaces a 200 V to 400 V battery pack, and that includes integrated level 2 wired charging and wireless charging functions. The project incorporated SiC MOSFET modules having switching frequencies in excess of 100 kHz, planar magnetics, a hierarchical control architecture that enables scaling to higher voltages and powers with additional converter modules, and a high-power density in excess of 20 kW/L. The research demonstrated how a more complex converter approach can increase mean-time-to-failure, even though the number of elements is increased. This is achieved through significant reduction of temperature rise through fundamentally superior converter circuit topologies. The research also demonstrated new high power planar magnetics that increase power density. The technology is appropriate to a variety of applications including EV power trains, EV charging, PV inverters, battery storage, and similar areas. These systems potentially can be manufactured in the U.S.

33 ADVANCED PROPULSION SYSTEMS↗

External Fast Electrically-Controlled Ferroelectric Tuners for SRF Cavities

Euclid Techlabs LLC, in collaboration with JLAB (R. Rimmer, C. Hovater) has been awarded the Phase I 2021 DOE SBIR DE-SC0021510 project to develop the first Fast Ferroelectric reactive tuner (FRT) for a SRF accelerator that is currently in operation – CEBAF at JLAB, and is studying the possibility of developing a tuner designs for various new applications: fast frequency switching, transient detuning, and microphonics compensation for the SRF accelerators.

43 PARTICLE ACCELERATORS↗

High Linearity RF Circuits in CMOS Platforms (CRADA Final Report)

The goal of this CRADA was to understand high linearity silicon-on-insulator (SOI) radio frequency switches. The first direction investigated was high linearity RF mixers as these components are composed of a network of switches. During the course of the investigation, it was determined that while the SOI RF switches were effective in the application in mixers and produced state of the art performance, the use of SOI for mixers is not economically feasible because the technology only worked with advanced CMOS nodes <65nm which can have an NRE cost (from lithography masks) in excess of $\$$500,000.

42 ENGINEERING↗

A Hot‐Swappable, Fault‐Tolerant, Modular Power Converter System for Solar Photovoltaic Plants

The performance metrics of the state-of-the-art commercial solar inverters, such as system cost, operation and maintenance (O&M) cost, service life, reliability, maintainability, and power density are much lower than the target metrics needed to achieve SunShot’s 2030 levelized cost of energy (LCOE) goals. To overcome the shortcomings of the existing solar inverters, this project proposed a novel Hot-Swappable, Fault-Tolerant, Modular Power Converter (HSFT-MPC) concept for solar photovoltaic (PV) plants and proved the concept through the design, fabrication, and laboratory test validation of a single-phase HSFT-MPC prototype. The HSFT-MPC has the following distinct advantages over the state-of-the-art: 1) elimination of harmonic/ electromagnetic interference (EMI) filter in the inverter stage due to the novel topology, 2) lower system cost and higher power density due to the modular design, elimination of harmonic/EMI filter, and lower cooling requirement, 3) higher efficiency due to lower switching frequencies, 4) higher reliability and longer (50 years) service life due to simpler cooling and fault tolerance capability, 5) easier installation, lower O&M cost, and improved maintainability due to the modular design and hot-swappable power electronic building blocks (PEBBs), and 6) improved manufacturability due to the modular design. This project developed a single-phase HSFT-MPC prototype with 25kW nominal output power, 2.4kV, 60Hz nominal AC output, lower than 5% AC output voltage total harmonic distortion, over 5 kW/L inverter power density, and 99.4% inverter peak efficiency, being tolerant to failure of single and multiple PEBBs, and capable of hot swapping of the failed PEBB(s). The HSFT-MPC enables uninterruptable operation of the solar PV plant when failure of single or multiple PEBBs or PV modules occurs. Compared with the existing solar inverters in the market, the HSFT-MPC is expected to reduce the inverter failure-caused downtime and energy losses of solar PV plants by more than 60% and 50%, respectively. Project findings have been presented at major conferences in the field and published in peer-reviewed papers, which added new knowledge to the field of power electronics for solar PV systems. A minicourse on Solar PV Systems was developed for outreach activities. The minicourse will help attract young individuals to the renewable energy profession which has a significant talent shortage. The HSFT-MPC is expected to overcome all of the shortcomings of the state-of-the-art solar inverters in terms of cost, efficiency, service life, reliability, maintainability, and manufacturability targets needed to achieve SunShot’s 2030 LCOE goals. Therefore, the proposed HSFT-MPC concept has the great potential to disrupt the current solar inverter market. This project created a pathway towards industry adoption of the HSFT-MPC to help achieve 50-year service life solar PV systems. Since the solar PV plants using the HSFT-MPC will feature with higher reliability, longer service life, and easier maintenance, they are particularly useful for the rural areas with underserved populations that demand reliable and affordable clean electricity. The outcomes of the project have the strong potential to address national needs in the field of renewable energy to reduce CO 2 emissions from the electricity sector, reduce imports of energy from foreign sources, and improve energy security, efficiency, and sustainability. Since electricity is used in almost all of society’s sectors, the outcomes of the project will benefit various sectors of society and economy.

14 SOLAR ENERGY↗

Electric Drive Technologies Research: ELT223 Component Modeling, Co-Optimization, and Trade-Space Evaluation Annual Report

This project is intended to support the development of new traction drive systems that meet the targets of 100 kW/L for power electronics and 50 kW/L for electric machines with reliable operation to 300,000 miles. To meet these goals, new designs must be identified that make use of state-of-the-art and next-generation electronic materials and design methods. Designs must exploit synergies between components, for example converters designed for high-frequency switching using wide band gap (WBG) devices and ceramic capacitors. This project included: (1) a survey of available technologies; (2) investigating new technologies, that for example, reduce volume of thermal management or magnetic components; (3) the development of computer aided design tools that consider the converter volume, reliability, and electrical performance; (4) exercising the design software to evaluate performance gaps and predict the impact of certain technologies and design approaches, i.e. GaN semiconductors, ceramic capacitors, ceramic thermal management components, and select topologies; (5) building and testing hardware prototypes to validate models and concepts. The design tools enable co-optimization of the power module and passive elements and provide some design guidance. At the end of the project, new advanced computing methods, such as machine learning approaches, were considered.

33 ADVANCED PROPULSION SYSTEMS↗

SMART SiC Power ICs: Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (Final Technical Report)

This collaborative project was initiated with the goal of developing Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits (SMART SiC Power ICs). In pursuit of this objective, innovative designs and fabrication processes were implemented, enabling the development of large-scale (>1 cm²) SiC Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuits and high-voltage (400–600 V) lateral power MOSFETs (HV-LDMOS) on 150 mm 4H-SiC substrates. The resulting SMART SiC Power ICs are tailored to support a wide range of applications requiring diverse voltage and power levels, including automotive systems, industrial equipment, electronic data processing, energy harvesting, and power conditioning. To achieve the proposed ‘SMART’ technology for SiC ICs, the team focused on 1) the Development of highly scalable CMOS (with high channel mobilities for n-type and p-type MOSFETs), LDMOS (~600V, 10A rated), and IC technologies, 2) Establishment of a manufacturable process baseline in a production-grade-, 150mm, SiC fabrication facility, and 3) Demonstration of SMART SiC ICs. The project initially comprised of fabricating 5 lots. In lot 1 monolithic integration using a single process was achieved. Here, we were able to successfully accomplish Integrated HV NMOSFET with LV CMOS on N-epi/N+ Substrate. The HV NMOS demonstrated a Breakdown Voltage (BV) more than 600V. Circuit demonstration of CMOS was also another achievement from this lot. In lot 2, priority was in place for isolation and integration. Here we addressed the isolation concerns and integrated the HV NMOS and LV CMOS using the N-epi/P-epi/N+ substrate. Similar to the lot 1, we were able to achieve a BV of 600 V for HV NMOS. Optimized gate oxide process with high channel mobilities, better gate oxide reliability, development of SPICE models, successful ohmic process development, novel wafer area saving design layouts, P+ isolation schemes with channeling implantations and high temperature operational circuits demonstrations are some of the key highlights from lot 1 and lot2. In lot 3, discrete device performances of HV NMOS with a BV ~700V and reliable LV CMOS performances were achieved. Also, novel architectural solutions were successfully implemented to suppress the electric field crowding at the gate oxide for reliable operations. In lot 4, half bridge power driver ICs with a conversion efficiency of (target 90% to 95%) in the 1-5MHz switching frequency range for output power between 25 W to 3 kW have been included in. However, due to the unfortunate events of sudden foundry shutdown (SiCamore Semi) the processing of lot 4 wafers came to a complete stop (January 2024). Arrangements have recently been made to shift the fabrication to another foundry, General Electric Aerospace. The fabrication process now on course (as of December 2024). Characterizations are delayed due to this unfortunate circumstance. The proposed trench architectural-based devices and ICs (lot 5) underwent modifications from the original project proposal. This change was necessitated by limitations in the availability of trench-based processes at commercial production-grade fabrication facilities in the US. Apart from above achievements, a Process Development Kit (PDK) was successfully developed for planar type SiC CMOS/LDMOS.

42 ENGINEERING↗

Modeling and Characterization of Surface Discharges in Insulating Material for Spacers: Electrode Shape, Discharge Mode, and Revision of the Creepage Concept

In the design of MV AC and DC spacers, the predominant factors are surface and interface conditions. Design is generally carried out on specifications and standards which are based on long-term experience and lab testing. However, the diffusion of power electronics with a trend to increase electric field, switching frequency, and rise time to achieve higher power density calls for an innovative, global approach to optimized insulation system design. A new methodology, based on field simulation, discharge modeling, and partial discharge inception measurements, called the three-leg approach, can form the basis to optimize insulation design for any type of supply voltage waveform. This paper focuses on the influence of the type of electrode on the inception and phenomenology of surface discharges and, as a consequence, on the interpretation of the results used for application of the three-leg approach. It is demonstrated that a typical electrode system used for insulating material testing can generate both gas and surface discharges at the triple point, when the electrodes have a smooth profile that is used to avoid corona or flashover. Hence, testing partial discharge may not provide a straightforward indication of the surface discharge inception and, thus, be partially misleading for insulation design. Another takeover is that such analysis must benefit from PD testing tools endowed with analytics able to provide automatic identification of the type of defect generating PD, i.e., internal, surface, and corona, since design and remedy actions can be taken, and adequate insulating materials developed, only knowing the type of source generating PD. Hence, testing partial discharge may not provide a straightforward indication of surface discharge inception and, thus, be partially misleading for insulation design. In addition to the importance of the three-leg approach to favor reliable and optimized design of insulation systems, there is a clear need to have a PD testing tool endowed with analytics. It should preferably be able to provide automatic identification of the type of defect generating PD, i.e., internal, surface, and corona.

36 MATERIALS SCIENCE↗

Wireless Pulse-Width Modulation Control of Power Converters Using Ultra-Wideband Technology for Distributed High-Voltage Systems: Preprint

In this study, we present a new approach for wireless pulse-width modulation (PWM) control of a power converter, applicable to numerous power converters within a complex electrical distribution system. This method eliminates the need for multiple physical connections of gating/PWM signals among distributed converter modules. By using ultra-wideband-based communication, the PWM control signals can be wirelessly transmitted from a central controller to multiple converters simultaneously and seamlessly. System stability is thoroughly analyzed, and experimental results validate the efficacy of the wireless control scheme for a buck converter operating at a 50-kHz switching frequency. The minimum latency obtained from this setup is 5.38 mus. This control concept offers easier implementation of distributed control in high-voltage power systems, especially in multilevel architectures, even under harsh conditions with ambient noise.

ADVANCED PROPULSION SYSTEMS↗

A Fully Decentralized Modulation Scheme for Modular Multilevel Converters

As the number of submodules rapidly increase, control architecture of Modular Multilevel Converters (MMCs) is transforming from centralized to distributed in order to address the challenges of tremendous computational burden and massive wiring. In this digest, we propose a modulation scheme for the MMCs with distributed controls, where each submodule is able to handle both controls and modulation in a decentralized manner. It enables the distributed controllers to synchronize in terms of fast-switching pulse width modulation (PWM). Aiming at this key technical challenge, this research develops a physics-informed PWM control strategy of mirroring the spontaneous synchronization feature of coupled oscillator’s behavior at switching frequency. Thanks to less reliance on wirings and communications, the proposed approach has the potential of i) improving reliability of MMC systems, and ii) reducing cost and space requirements for MMCs. The proposed approach has been preliminarily verified through a simulation tool for power electronics systems.

Lu, Minghui [BATTELLE (PACIFIC NW LAB)]↗

Optimal Hairpin Winding Configuration for EV Traction Motors to Enhance Active CMV Cancellation Capability of NPL.X Inverter

Active common-mode voltage (CMV) cancellation in neutral-point-less (NPL.X) inverter is an effective approach for reducing common-mode electromagnetic interference and alleviating voltage stress associated with high-speed switching in EV traction drives. However, the existing hairpin winding configuration often exhibits impedance imbalance due to slot leakage inductance and manufacturing constraints, limiting the effectiveness of active CMV cancellation. This paper investigates symmetric hairpin winding configurations for a dual-three-phase EV traction machine to improve impedance symmetry. Considering the manufacturing constraints of six-layer hairpin windings, four feasible symmetric winding configurations are analyzed. Two-dimensional finite-element analysis is performed to extract the impedance parameters of each configuration. The extracted impedance parameters are used to quantify the impedance mismatch between complementary phase pairs and evaluate its influence on active CMV cancellation. The results show that the fully interleaved winding configuration achieves perfectly balanced phase impedances with 0 % mismatch, whereas the mismatch in the other configurations ranges from approximately 2.4 % to 0.8 %. Consequently, the resulting total CMV overshoot is significantly suppressed to near zero voltage under high-voltage and high switching frequency operating conditions, demonstrating the importance of winding symmetry for maximizing the active CMV cancellation capability of the NPL.X inverter.

Lee, Kangbeen [Purdue Univ., West Lafayette, IN (U↗

Design of a Non-PLL Grid-Forming Inverter for Smooth Microgrid Transition Operation: Preprint

This paper develops a non-phase-locked loop (PLL) grid-connected inverter that can improve the microgrid’s transients during transition operation. By emulating the operation of a synchronous machine, the inverter generates its own voltage and frequency during startup, synchronizes and connects to the grid, then operates in reactive power mode (grid-feeding) with self-generated voltage and frequency, and switches to voltage-frequency mode to establish system voltage and frequency (grid-forming) when the microgrid disconnects from the main grid, and vice versa. To enable fast synchronization, active synchronization control is adopted both during inverter startup and microgrid reconnection operation. The simulation results show that the developed non-PLL grid-connected inverter works effectively to synchronize the inverter and microgrid to the grid and avoids a phase jump during microgrid transition operation. Thus, the microgrid’s transients are significantly improved with the proposed control technique.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

An LES study of secondary motion and wall shear stresses in a pipe bend

In this study, large-eddy simulations (LES) of a single-phase, turbulent flow in a 90 ° pipe bend are performed at three Reynolds numbers (5300, 27 000, and 45 000) to investigate the correlation between secondary flow motion and wall shear stresses, which is suspected to be a potential mechanism responsible for material erosion. The isothermal flows are validated against available experimental and numerical data first. The snapshot proper orthogonal decomposition (POD) is applied for the medium and high Reynolds number flows to identify the secondary flow motions and the oscillation of the Dean vortices that are found to cause swirl-switching. Distinguished frequencies of the POD time coefficients at Strouhal numbers of 0.25 and 0.28 are identified for Reynolds numbers at 27 000 and 45 000, respectively. Moreover, shear stress on the pipe wall and the associated power spectral density are obtained and shown to have the same oscillating frequency as the swirl-switching.

42 ENGINEERING↗

Secondary-Side Active Rectifier Synchronization and Control in LCC-LC Compensated Inductive Power Transfer Systems

This paper proposes a communication-less synchronization and output power control strategy for LCC-LC compensated inductive power transfer systems with a secondaryside active rectifier. By replacing the passive rectifier with an active bridge, the proposed architecture eliminates the need for a separate secondary-side DC-DC converter and enables direct regulation of battery power. The key challenge in such a system is achieving robust synchronization of the secondary active bridge with the primary inverter without access to primary-side signals. To address this issue, the secondary-side variables are analyzed and the current through the secondary series inductor is identified as a load-independent synchronization variable with a fixed phase relationship to the primary excitation. A fixed-frequency second order generalized (SOGI)-based phase locked loop (PLL) is used to estimate the switching phase and frequency, and a phase-shift-based output power controller is developed using a phasor-transformer model of the active bridges. A modified control formulation is further introduced to remove phase-dependent loop-gain variation and simplify controller design. Simulation results validate the proposed method under both fixed and varying switching-frequency conditions, demonstrating successful frequency tracking from 82 kHz to 88 kHz and accurate output power regulation over a wide operating range. The proposed method offers a compact and effective solution for high-power IPT systems by enabling secondary-side synchronization and control without wireless communication or an additional DC-DC conversion stage.

Fernandes, Arnold Anthony [ORNL] (ORCID:0009000631↗

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

Output capacitance (C OSS ) loss (E DISS ) is produced when the C OSS of a power device is charged and discharged, which ideally should be a lossless process. This loss was recently revealed to be a crucial concern for GaN high electron mobility transistors (HEMTs) in high-frequency soft-switching applications. Among various GaN devices, the composite-type, cascode GaN HEMT was reported to show the largest E DISS with a voltage dependence distinct from discrete GaN HEMTs. However, the physical origins of the EDISS in cascode GaN HEMTs remain unclear. This work fills this gap by identifying three loss components and, for the first time, experimentally quantifying them in the multi-MHz resonant switching. These loss components include a) the avalanche loss of Si MOSFET, b) the intrinsic E DISS of GaN HEMT, and c) the Si avalanche-induced GaN turn-ON loss. The last component was found to dominate E DISS at high voltage. By eliminating the Si avalanche and the associated loss components (a) and (c), the E DISS of cascode GaN HEMTs can be reduced by up to 75% at the price of an increase in output charge and switching transition time. Furthermore, these results provide new physical insights and practical guidelines to trim the soft-switching loss of cascode GaN HEMTs in high-frequency applications.

42 ENGINEERING↗

Frequency and time multiplexing for multiphoton state generation

One of the primary challenges with photonic quantum information processing is that single-photon states are created and heralded probabilistically, rather than being created on demand. One solution to this problem is multiplexing , which is attempting probabilistic generation of a single photon at multiple locations, times, or frequencies, and switching one successfully generated photon into an output mode. Motivated by the development of frequency-based photonic quantum information processing, we consider multiplexing using frequency and time as our options to use to get many photon generation opportunities. We devise an approach for generating multiphoton states, with photons populating multiple frequency modes in the same spatiotemporal mode. This method uses a variable-length optical delays to manipulate the temporal mode of the photons, and spaced fiber Bragg grating (FBG) reflectors to jointly manipulate the frequency and temporal modes of the photons. Experimental progress toward implementing this multiplexing scheme is proceeding along 2 fronts, each with different ways to achieve the variable-length optical delay. First, we will implement this scheme using a free-space optical quantum memory with multiple discretely adjustable free-space delays. For this implementation method, I calculate multiphoton generation rates, accounting for loss, that are realistically achievable with commercially available hardware. This work will appear in a theory paper, currently in preparation. Second, we will implement this multiplexing scheme in an integrated manner: the variable-length optical delay will happen on-chip using a long-lifetime Q-switchable Fabry-Perot cavity. The joint manipulation of the frequency and temporal modes of the photons will still happen off-chip in fiber with FBG reflectors. I report on experimental progress in constructing integrated Q-switchable Fabry-Perot cavities.

97 MATHEMATICS AND COMPUTING↗

Robust Biaxial Anisotropy and Switchable Néel Vectors in LaFeO 3 Epitaxial Films

Antiferromagnets with highly stable but switchable Néel vectors are desired for antiferromagnetic spintronics with ultrafast speed and terahertz frequencies. Electrical switching of antiferromagnetic insulators has been demonstrated using binary antiferromagnets, while large families of complex antiferromagnets such as perovskites are largely unexplored. Here, we show that epitaxial LaFeO 3 thin films on SrTiO 3 (001) exhibit clear, robust biaxial anisotropy with a spin-flop field of a few tesla. Angular-dependent spin-Hall magnetoresistance (SMR) characterizations of Pt/LaFeO 3 bilayers with the current channel along SrTiO 3 [100] and [110] reveal distinct, intriguing shapes and field dependence. Simulations using a macrospin model accurately describe the main behavior and fine features of the SMR data from which key antiferromagnetic parameters are extracted. Furthermore, remanent SMR measurement confirms the high fidelity of the Néel vector along either easy axis of the biaxial anisotropy, indicating that epitaxial films of LaFeO 3 and potentially other perovskite antiferromagnets offer an attractive platform for antiferromagnetic spintronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Optimal filtering and generation of entangled photons for quantum applications in the presence of noise

Filtering is commonly used in quantum optics to reject noise photons, and also to enable interference between independent photons. However, filtering the joint spectrum of photon pairs can reduce the inherent coincidence probability or loss-independent heralding efficiency. Here we investigate filtering for multiphoton applications based on entanglement and interference (e.g., quantum teleportation). We multiplex C-band entangled photons and C-band classical communications into the same long-distance fibers, which enables scalable low-loss quantum networking but requires filtering of spontaneous Raman scattering noise from classical light. Using tunable-bandwidth filters, low-jitter detectors, and polarization filters, we distribute wavelength-degenerate time-bin entangled photons in the C band (1536.5 nm) over 25 km/25 km standard fibers (50 km) each carrying 10 Gbit/s C-band classical data signals. Narrow filtering enables milliwatt-level C-band power, which exceeds the power achieved by comparable studies by roughly an order of magnitude and could feasibly support terabit per second classical rates. We evaluate how performance depends on pump and filter bandwidths, multipair emission, filter shapes, loss, phase matching, and how quantum information is measured. We find a trade-off between reducing noise impact and increasing single-mode purity, and discuss mitigation methods toward optimal multiphoton applications. Importantly, these results apply to noise in free space and in quantum devices (sources, frequency converters, switches, detectors, etc.) and provide insight into filter-induced degradation of single-photon purity and rates even in noise-free environments.

Thomas, Jordan M. [Fermilab; Northwestern U.]↗