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DOE OSTI · 2482429

High Linearity RF Circuits in CMOS Platforms (CRADA Final Report)

Sonsteng, Melanie [Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)]·Hill, Cameron [Lintrinsic Semiconductors Inc., Sommerville, MA (United States)]
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Abstract

The goal of this CRADA was to understand high linearity silicon-on-insulator (SOI) radio frequency switches. The first direction investigated was high linearity RF mixers as these components are composed of a network of switches. During the course of the investigation, it was determined that while the SOI RF switches were effective in the application in mixers and produced state of the art performance, the use of SOI for mixers is not economically feasible because the technology only worked with advanced CMOS nodes <65nm which can have an NRE cost (from lithography masks) in excess of $\$$500,000.

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BibTeXRIS

Sonsteng, Melanie [Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)], Hill, Cameron [Lintrinsic Semiconductors Inc., Sommerville, MA (United States)]. 2024-12-10. High Linearity RF Circuits in CMOS Platforms (CRADA Final Report). https://doi.org/10.2172/2482429

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