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New acid leaching process purifies silicon produced in reaction between silicon fluoride and sodium. Concentration of sodium fluoride and other impurities and byproducts remaining in silicon are within acceptable ranges for semi-conductor devices. Leaching process makes sodium reduction process more attractive for making large quantities of silicon for solar cells.
The web growth process, a silicon-sheet technology option, developed for the flat plate solar array (FSA) project, was examined. Base case data for the technical and cost parameters for the technical and commercial readiness phase of the FSA project are projected. The process add on price, using the base case data for cost parameters such as equipment, space, direct labor, materials and utilities, and the production parameters such as growth rate and run length, using a computer program developed specifically to do the sensitivity analysis with improved price estimation are analyzed. Silicon price, sheet thickness and cell efficiency are also discussed.
Waste reduced, and silicon production rate improved. In new process silicon formed by thermal decomposition of SiH4. Part of silicon formed on silicon seed particles as result of surface chemical reaction. However, silicon formed by homogeneous reaction in gas phase tends to form aggregates of silicon atoms, which appear as fine particles (like dust). Believed that scavenging action of seed particles enables large fraction fines to be incorporated onto seed surface. This mode of growth confirmed by electron microscopy photographs.
The design of a 128x128 staring short wave infrared (SWIR) HgCdTe focal plane incorporating charge integrating transimpedance input preamplifiers is presented. The preamplifiers improve device linearity and uniformity, and provide signal gain ahead of the miltiplexer and readout circuitry. Detector's with cutoff wavelength of 2.5 microns and operated at 80 K have demonstrated impedances in excess of 10(exp 16) ohms with 60 percent quantum efficiency. Focal plane performance using a smaller format device is presented which demonstrates the potential of this approach. Although the design is capable of achieving less than 30 rms electrons with todays technology, initial small format devices demonstrated a read noise of 100 rms electrons and were limited by the atypical high noise performance of the silicon process run. Luminescence from the active silicon circuitry in the multiplexer limits the minimum detector current to a few hundred electrons per second. Approaches to eliminate this excessive source of current is presented which should allow the focal plane to achieve detector background limited performance.
A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.
Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.
An overview of the state of the art of processing silicon for use as infrared detectors is presented. Improvements in the process that could be obtained in a low-g environment were examined. The various requirements for the different types of Si detector materials are summarized.
Elastomers enhance thermal and mechancial properties. Capable of performing in extreme thermal/oxidative environments and having molecular weights above 10 to the sixth power prepared and analyzed in laboratory experiments. Made of methylvinylsilphenylene-siloxane terpolymers, new materials amenable to conventional silicone-processing technology. Similarly formulated commercial methyl-vinyl silicones, vulcanized elastomers exhibit enhance thermal/oxidative stability and equivalent or superior mechanical properties.
An improved process for the fabrication of random arrays of silicon nanotips has been demonstrated to be feasible. Relative to other such processes, this process offers advantages of low cost and simplicity. Moreover, this process can readily be combined with other processes used to fabricate integrated circuits and other monolithic silicon structures. Arrays of silicon nanotips are subjects of research and development efforts directed toward utilizing them as field emitters in flat-panel displays, vacuum microelectronics, and microwave devices. Other silicon-nanotip-fabrication processes developed thus far predominantly include lithography, etching, and/or elaborate deposition steps followed by oxide sharpening steps and are both process intensive as well as expensive. In addition to being cheaper and simpler, the present process can efficiently produce silicon nanotips that range in height from a few microns to several tens of microns and are distributed over large areas. The process mentioned here can be summarized as consisting of (1) the growth of micro-etch masks on a silicon substrate, followed by (2) etching away of the masks, along with some of the substrate, to make an array of sharp tips. In the first step of the process, a cleaned silicon substrate is subjected to reactive ion etching (RIE) in a certain mixture of oxygen and carbon tetrafluoride under radio-frequency excitation. This process step results in the growth of fluorine based compounds in the form of stumps randomly distributed on the substrate. These stumps are known in the art as polymer RIE grass. The dimensions of these stumps are of the order of hundreds of nanometers, the exact values depending on process time and gas composition. The areal density of the stumps decreases with increasing process time as they grow and merge with neighboring stumps. These stumps constitute the micro-etch masks for the next step of the process. In the second step of the process, the substrate covered with the microetch masks is subjected to deep reactive ion etching (DRIE) process, which consists of cycles of reactive ion etching alternating with passivation (the Bosch process). The gas used in the etching substeps is sulfur hexafluoride (SF6); the gas used in the passivation substeps is octafluorocyclobutane (C4F8). The portions of the substrate directly under the RIE grass stubs are etched more slowly than are the portions between the stubs. Hence, what remains at the end of the process, after the stubs and parts of the substrate have been etched away, are silicon spikes where the stubs were (see figure). In a variation of the process, one starts with a silicon or silicon-on-insulator substrate with the intent to etch through the full thickness of the substrate. That is to say, one chooses the thickness so that the DRIE step releases individual nanotips. Such individual silicon nanotips may have utility as microscopic probes in biomedical applications.
Several process sequences are shown to be of potentially low cost and to perform effectively when applied to the high quality silicon crystals for which they were developed. The extent to which such process sequences can also perform effectively when applied to lower cost thin film solar cells formed by epitaxial deposition of Si on potentially inexpensive substrates of upgraded metallurgical grade Si was investigated.
New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.
Silicon carbide (SCS-6) fiber reinforced-reaction formed silicon carbide matrix composites were fabricated using NASA's reaction forming process. Silicon-2 at a percent of niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bi-modal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon and silicon. Fiber push-out tests on these composites determined a debond stress of approx. 67 MPa and a frictional stress of approx. 60 MPa. A typical four point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pull out.
Silicon carbide fiber (SCS-6) reinforced-reaction-formed silicon carbide matrix composites were fabricated using a reaction-forming process. Silicon-2 at.% niobium alloy was used as an infiltrant instead of pure silicon to reduce the amount of free silicon in the matrix after reaction forming. The matrix primarily consists of silicon carbide with a bimodal grain size distribution. Minority phases dispersed within the matrix are niobium disilicide (NbSi2), carbon, and silicon. Fiber pushout tests on these composites determined a debond stress of approximately 67 MPa and a frictional stress of approximately 60 MPa. A typical four-point flexural strength of the composite is 297 MPa (43.1 KSi). This composite shows tough behavior through fiber pullout.
Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.
Primitive meteorites contain a few parts per million (ppm) of pristine interstellar grains that provide information on nuclear and chemical processes in stars. Their interstellar origin is proven by highly anomalous isotopic ratios, varying more than 1000-fold for elements such as C and N. Most grains isolated thus far are stable only under highly reducing conditions (C/O greater than 1), and apparently are 'stardust' formed in stellar atmospheres. Microdiamonds, of median size about 10 A, are most abundant (about 400-1800 ppm) but least understood. They contain anomalous noble gases including Xe-HL, which shows the signature of the r- and p-processes. Silicon carbide, of grain size 0.2-10 microns and abundance about 6 ppm, shows the signature of the s-process and apparently comes mainly from red giant carbon (AGB) stars of 1-3 solar masses. Some grains appear to be not less than 10 exp 9 a older than the solar system. Graphite spherules of grain size 0.8-7 microns and abundance less than 2 ppm contain highly anomalous C and noble gases, as well as large amounts of fossil Mg-26 from the decay of extinct Al-26. They seem to come from at least three sources, probably AGB stars, novae, and Wolf-Rayet stars.
Solar cell fabrication processes, in particular junction formation and metallization, are evaluated in terms of cell efficiencies, process yields, module packing factors, and energy cost effectiveness. It is shown that for junction formation, the diffusion processes provide a relatively low-cost approach. The costs per unit cell area can be further reduced by increased wafer area and mechanized wafer handling. The costs for a large number of metallization processes, excluding the costs of the metal, are roughly comparable. However, their varying influence on cell performance leads to a significant spread in the allowable process costs.
The results for Task 3 of the Low Cost Solar Array Project are presented. Task 3 is directed toward the development of a cost effective encapsulating system for photovoltaic modules using silicon based materials. The technical approach of the contract effort is divided into four special tasks: (1) technology review; (2) generation of concepts for screening and processing silicon encapsulation systems; (3) assessment of encapsulation concepts; and (4) evaluation of encapsulation concepts. The candidate silicon materials are reviewed. The silicon and modified silicon resins were chosen on the basis of similarity to materials with known weatherability, cost, initial tangential modulus, accelerated dirt pick-up test results and the ratio of the content of organic phenyl substitution of methyl substitution on the backbone of the silicon resin.
Laser anneals silicon solar cells rapidly enough for use in production. Laser frequently doubled neoduyminum: yttrium-aluminum-garnet (Nd:YAG) device. 30-m-diameter spot formed by lasers covers enough area to process silicon wafers rapidly. Laser anealed cells have efficiencies greater than 15 percent.