NASA NTRS ยท 19810010623
Float zone silicon for IR detectors
Abstract
An overview of the state of the art of processing silicon for use as infrared detectors is presented. Improvements in the process that could be obtained in a low-g environment were examined. The various requirements for the different types of Si detector materials are summarized.
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Kern, E. L.. 1980-12-01. Float zone silicon for IR detectors. https://ntrs.nasa.gov/citations/19810010623
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