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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

Shape Memory Characteristics of Ti(sub 49.5)Ni(sub 25)Pd(sub 25)Sc(sub 0.5) High-Temperature Shape Memory Alloy After Severe Plastic Deformation

A Ti(49.5)Ni25Pd25Sc(0.5) high-temperature shape memory alloy is thermomechanically processed to obtain enhanced shape-memory characteristics: in particular, dimensional stability upon repeated thermal cycles under constant loads. This is accomplished using severe plastic deformation via equal channel angular extrusion (ECAE) and post-processing annealing heat treatments. The results of the thermomechanical experiments reveal that the processed materials display enhanced shape memory response, exhibiting higher recoverable transformation and reduced irrecoverable strain levels upon thermal cycling compared with the unprocessed material. This improvement is attributed to the increased strength and resistance of the material against defect generation upon phase transformation as a result of the microstructural refinement due to the ECAE process, as supported by the electron microscopy observations.

Atli, K. C.↗

Fast Magnetoresistive Random-Access Memory

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Wu, Jiin-Chuan↗

Memory implications of the spin-value effect in soft multilayers

New multilayer permalloy materials with thin separation layers that have significantly increased M-R coefficients at room temperature have the potential for substantially increasing both the speed and density of M-R memories. An analysis in the following discussion shows that the bit density at a given performance level is related to the product of M-R response and sheet resistivity when operating at the current-density limit. With a doubling of both sheet resistivity and M-R response over existing materials, the bit area can be reduced by about a factor of 4. Alternatively, if the bit area is kept the same, signal output is increased by a factor of 4 and circuit time constants can be reduced by a factor of 16.

Pohm, A. V.↗

Applications of the conjugate gradient FFT method in scattering and radiation including simulations with impedance boundary conditions

The theoretical and computational aspects related to the application of the Conjugate Gradient FFT (CGFFT) method in computational electromagnetics are examined. The advantages of applying the CGFFT method to a class of large scale scattering and radiation problems are outlined. The main advantages of the method stem from its iterative nature which eliminates a need to form the system matrix (thus reducing the computer memory allocation requirements) and guarantees convergence to the true solution in a finite number of steps. Results are presented for various radiators and scatterers including thin cylindrical dipole antennas, thin conductive and resistive strips and plates, as well as dielectric cylinders. Solutions of integral equations derived on the basis of generalized impedance boundary conditions (GIBC) are also examined. The boundary conditions can be used to replace the profile of a material coating by an impedance sheet or insert, thus, eliminating the need to introduce unknown polarization currents within the volume of the layer. A general full wave analysis of 2-D and 3-D rectangular grooves and cavities is presented which will also serve as a reference for future work.

Barkeshli, Kasra↗

Compact, Low-Force, Low-Noise Linear Actuator

Actuators are critical to all the robotic and manipulation mechanisms that are used in current and future NASA missions, and are also needed for many other industrial, aeronautical, and space activities. There are many types of actuators that were designed to operate as linear or rotary motors, but there is still a need for low-force, low-noise linear actuators for specialized applications, and the disclosed mechanism addresses this need. A simpler implementation of a rotary actuator was developed where the end effector controls the motion of a brush for cleaning a thermal sensor. The mechanism uses a SMA (shape-memory alloy) wire for low force, and low noise. The linear implementation of the actuator incorporates a set of springs and mechanical hard-stops for resetting and fault tolerance to mechanical resistance. The actuator can be designed to work in a pull or push mode, or both. Depending on the volume envelope criteria, the actuator can be configured for scaling its volume down to 4 2 1 cm3. The actuator design has an inherent fault tolerance to mechanical resistance. The actuator has the flexibility of being designed for both linear and rotary motion. A specific configuration was designed and analyzed where fault-tolerant features have been implemented. In this configuration, an externally applied force larger than the design force does not damage the active components of the actuator. The actuator housing can be configured and produced using cost-effective methods such as injection molding, or alternatively, its components can be mounted directly on a small circuit board. The actuator is driven by a SMA -NiTi as a primary active element, and it requires energy on the order of 20 Ws(J) per cycle. Electrical connections to points A and B are used to apply electrical power in the resistive NiTi wire, causing a phase change that contracts the wire on the order of 5%. The actuation period is of the order of a second for generating the stroke, and 4 to 10 seconds for resetting. Thus, this design allows the actuator to work at a frequency of up to 0.1 Hz. The actuator does not make use of the whole range of motion of the SMA material, allowing for large margins on the mechanical parameters of the design. The efficiency of the actuator is of the order of 10%, including the margins. The average dissipated power while driving at full speed is of the order of 1 W, and can be scaled down linearly if the rate of cycling is reduced. This design produces an extremely quiet actuator; it can generate a force greater than 2 N and a stroke greater than 1 cm. The operational duration of SMA materials is of the order of millions of cycles with some reduced stroke over a wide temperature range up to 150 C.

Badescu, Mircea↗

Compact, Low-Force, Low-Noise Linear Actuator

Actuators are critical to all the robotic and manipulation mechanisms that are used in current and future NASA missions, and are also needed for many other industrial, aeronautical, and space activities. There are many types of actuators that were designed to operate as linear or rotary motors, but there is still a need for low-force, low-noise linear actuators for specialized applications, and the disclosed mechanism addresses this need. A simpler implementation of a rotary actuator was developed where the end effector controls the motion of a brush for cleaning a thermal sensor. The mechanism uses a SMA (shape-memory alloy) wire for low force, and low noise. The linear implementation of the actuator incorporates a set of springs and mechanical hard-stops for resetting and fault tolerance to mechanical resistance. The actuator can be designed to work in a pull or push mode, or both. Depending on the volume envelope criteria, the actuator can be configured for scaling its volume down to 4x2x1 cu cm. The actuator design has an inherent fault tolerance to mechanical resistance. The actuator has the flexibility of being designed for both linear and rotary motion. A specific configuration was designed and analyzed where fault-tolerant features have been implemented. In this configuration, an externally applied force larger than the design force does not damage the active components of the actuator. The actuator housing can be configured and produced using cost-effective methods such as injection molding, or alternatively, its components can be mounted directly on a small circuit board. The actuator is driven by a SMA -NiTi as a primary active element, and it requires energy on the order of 20 Ws(J) per cycle. Electrical connections to points A and B are used to apply electrical power in the resistive NiTi wire, causing a phase change that contracts the wire on the order of 5%. The actuation period is of the order of a second for generating the stroke, and 4 to 10 seconds for resetting. Thus, this design allows the actuator to work at a frequency of up to 0.1 Hz. The actuator does not make use of the whole range of motion of the SMA material, allowing for large margins on the mechanical parameters of the design. The efficiency of the actuator is of the order of 10%, including the margins. The average dissipated power while driving at full speed is of the order of 1 W, and can be scaled down linearly if the rate of cycling is reduced. This design produces an extremely quiet actuator; it can generate a force greater than 2 N and a stroke greater than 1 cm. The operational duration of SMA materials is of the order of millions of cycles with some reduced stroke over a wide temperature range up to 150 C.

Badescu, Mircea↗

Learning From Failure: Boosting Cycling Endurance of Optical Phase Change Materials

Chalcogenide phase change materials (PCMs) are a unique class of compounds whose switchable optical and electronic properties have fueled an explosion of emerging applications in microelectronics and microphotonics. Key to any application is the ability of PCMs to reliably switch between crystalline and amorphous states over a large number of cycles. While this issue has been extensively studied in the case of microelectronic memories, current PCM-based optical devices suffer from much inferior endurance. To understand the failure mechanisms limiting endurance of PCMs specifically in microphotonic devices, we have developed an on-chip resistive micro-heater platform and an automatic multi-modal characterization system to analyze cycling performance of optical PCMs. Reversible switching of large-area PCM devices over 50,000 cycles was demonstrated.

Optical phase change material↗

Retraction Assembly for Space Shuttle Extended Nose Landing Gear

As part of a project to encourage the use of shape memory alloy actuators for space actuators, this mechanism uses a nitinol ribbon to provide the necessary motion to help retract the proposed extended nose landing gear (ENLG) for the space shuttle. Initial proof-of-concept design of the ENLG did not include the ability to retract the gear automatically. One proposed actuator for this purpose was designed at Johnson Space Center and uses resistive heating to rotate the ribbon around a cylinder. This rotation then allows the assembly to pull down a wedge that is used to hold the landing gear strut in place, thus returning the landing gear to its previous height before extension. The presentation will follow the design of this assembly from working with the nitinol ribbon to providing mechanical connections and allowing minimal friction for motion of three wraps around a cylinder. Also to be presented is preliminary work on design of a shape memory alloy gripper, a design project to demonstrate uses of NiTi.

Files, Bradley S.↗

Transformation temperatures of martensite in beta phase nickel aluminide

Resistivity and thermal arrest measurements determined that the compositional dependence of Ms (martensite state) temperatures for NiAl martensite was linear between 60 and 69 atomic percent nickel, with Ms = 124 Ni - 7410 K. Resistivity and surface relief experiments indicated the presence of thermoelastic martensite for selected alloys. Some aspects of the transformation were studied by hot stage microscopy and related to the behavior observed for alloys exhibiting the shape-memory effect.

Smialek, J. L.↗

High density associative memory

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Moopenn, Alexander W.↗

Particle sensor array

A particle sensor array which in a preferred embodiment comprises a static random access memory having a plurality of ion-sensitive memory cells, each such cell comprising at least one pull-down field effect transistor having a sensitive drain surface area (such as by bloating) and at least one pull-up field effect transistor having a source connected to an offset voltage. The sensitive drain surface area and the offset voltage are selected for memory cell upset by incident ions such as alpha-particles. The static random access memory of the present invention provides a means for selectively biasing the memory cells into the same state in which each of the sensitive drain surface areas is reverse biased and then selectively reducing the reversed bias on these sensitive drain surface areas for increasing the upset sensitivity of the cells to ions. The resulting selectively sensitive memory cells can be used in a number of applications. By way of example, the present invention can be used for measuring the linear energy transfer of ion particles, as well as a device for assessing the resistance of CMOS latches to Cosmic Ray induced single event upsets. The sensor of the present invention can also be used to determine the uniformity of an ion beam.

Buehler, Martin G.↗

I-V Characteristics of a Static Random Access Memory Cell Utilizing Ferroelectric Transistors

I-V characteristics for FeFET different than that of MOSFET Ferroelectric layer features hysteresis trend whereas MOSFET behaves same for both increasing and decreasing VGS FeFET I-V characteristics doesn't show dependence on VDS A Transistor with different channel length and width as well as various resistance and input voltages give different results As resistance values increased, the magnitude of the drain current decreased.

Laws, Crystal↗

Transformation temperatures of martensite in beta-phase nickel aluminide.

Resistivity and thermal arrest measurements determined that the compositional dependence of M sub s temperatures for NiAl martensite was linear between 60 and 69 at. % Ni, with M sub s = (124 Ni - 7410)K. Resistivity and surface relief experiments for selected alloys indicated the presence of thermoelastic martensite. Some aspects of the transformation were studied by hot-stage microscopy and related to the behavior observed for alloys exhibiting the shape-memory effect.

Smialek, J. L.↗

Analyzing a 35-Year Hourly Data Record: Why So Difficult?

At the Goddard Distributed Active Archive Center, we have recently added a 35-Year record of output data from the North American Land Assimilation System (NLDAS) to the Giovanni web-based analysis and visualization tool. Giovanni (Geospatial Interactive Online Visualization ANd aNalysis Infrastructure) offers a variety of data summarization and visualization to users that operate at the data center, obviating the need for users to download and read the data themselves for exploratory data analysis. However, the NLDAS data has proven surprisingly resistant to application of the summarization algorithms. Algorithms that were perfectly happy analyzing 15 years of daily satellite data encountered limitations both at the algorithm and system level for 35 years of hourly data. Failures arose, sometimes unexpectedly, from command line overflows, memory overflows, internal buffer overflows, and time-outs, among others. These serve as an early warning sign for the problems likely to be encountered by the general user community as they try to scale up to Big Data analytics. Indeed, it is likely that more users will seek to perform remote web-based analysis precisely to avoid the issues, or the need to reprogram around them. We will discuss approaches to mitigating the limitations and the implications for data systems serving the user communities that try to scale up their current techniques to analyze Big Data.

computational performance↗

The Ranicon - A resistive anode image converter

A versatile photon and charged particle imaging system is described. The Ranicon employs a microchannel electron multiplier plate to convert each detected event into a charge signal. This charge pulse is proximity-focused onto a large-area resistive anode plate equipped with pickup electrodes on its edges. Each event is located electronically by the ratios of the charges collected at the edges or by the differences of the signals' risetimes. One- or two-dimensional pictures are built up by storing events digitally (e.g., a core memory) or in analog form (e.g., a storage oscilloscope). Compact laboratory models have been constructed and tested. Operating characteristics, applications, limitations, and advantages of the Ranicon are discussed.

Lampton, M.↗

Development of shape memory metal as the actuator of a fail safe mechanism

A small, compact, lightweight device was developed using shape memory alloy (SMA) in wire form to actuate a pin-puller that decouples the flanges of two shafts. When the SMA is heated it contracts producing a useful force and stroke. As it cools, it can be reset (elongated in this case) by applying a relatively small force. Resistive heating is accomplished by running a current through the SMA wire for a controlled length of time. The electronics to drive the device are not elaborate or complicated, consisting of a timed current source. The total available contraction is 3 percent of the length of the wire. This device, the engineering properties of the SMA, and the tests performed to verify the design concept are described.

Ford, V. G.↗

Intermetallic Nickel-Titanium Alloys for Oil-Lubricated Bearing Applications

An intermetallic nickel-titanium alloy, NITINOL 60 (60NiTi), containing 60 wt% nickel and 40 wt% titanium, is shown to be a promising candidate material for oil-lubricated rolling and sliding contact applications such as bearings and gears. NiTi alloys are well known and normally exploited for their shape memory behavior. When properly processed, however, NITINOL 60 exhibits excellent dimensional stability and useful structural properties. Processed via high temperature, high-pressure powder metallurgy techniques or other means, NITINOL 60 offers a broad combination of physical properties that make it unique among bearing materials. NITINOL 60 is hard, electrically conductive, highly corrosion resistant, less dense than steel, readily machined prior to final heat treatment, nongalling and nonmagnetic. No other bearing alloy, metallic or ceramic encompasses all of these attributes. Further, NITINOL 60 has shown remarkable tribological performance when compared to other aerospace bearing alloys under oil-lubricated conditions. Spiral orbit tribometer (SOT) tests were conducted in vacuum using NITINOL 60 balls loaded between rotating 440C stainless steel disks, lubricated with synthetic hydrocarbon oil. Under conditions considered representative of precision bearings, the performance (life and friction) equaled or exceeded that observed with silicon nitride or titanium carbide coated 440C bearing balls. Based upon this preliminary data, it appears that NITINOL 60, despite its high titanium content, is a promising candidate alloy for advanced mechanical systems requiring superior and intrinsic corrosion resistance, electrical conductivity and nonmagnetic behavior under lubricated contacting conditions.

DellaCorte, C.↗

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗