Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “domain texture”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H-SiC substrates using gallium (III) acetylacetonate or tris(2,2,6,6-tetramethyl-3,5-heptanedionato) gallium (III). Both gallium precursors produced the β phase, while only the use of the latter led to growth of κ-Ga2O3. Regardless of the used precursor, best results for β-Ga2O3 were achieved at a growth temperature of 700 °C and O2 flows in the range of 600–800 SCCM. A relatively narrow growth window was found for κ-Ga2O3, and best results were achieved for growth temperatures of 600 °C and the O2 flow of 800 SCCM. While phase-pure β-Ga2O3 was prepared, κ-Ga2O3 showed various degrees of parasitic β phase inclusions. X-ray diffraction and transmission electron microscopy confirmed a highly textured structure of β- and κ-Ga2O3 layers resulting from the presence of multiple in-plane domain orientations. Thermal conductivities of 53 nm-thick β-Ga2O3 (2.13 + 0.29/−0.51 W/m K) and 45 nm-thick κ-Ga2O3 (1.23 + 0.22/−0.26 W/m K) were determined by transient thermoreflectance and implications for device applications were assessed. Presented results suggest great potential of heterointegration of Ga2O3 and SiC for improved thermal management and reliability of future Ga2O3-based high power devices.

Materials Science↗

Topological spin texture in Janus monolayers of the chromium trihalides Cr(I, X ) 3

Topological magnetic states are promising for ultradense memory and logic devices. Recent progress in two-dimensional magnets encourages the idea to realize topological states, such as skyrmions and merons, in freestanding monolayers. However, monolayers such as CrI 3 lack Dzyaloshinskii-Moriya interactions (DMIs) and thus do not naturally exhibit skyrmions/merons but rather a ferromagnetic state. Here we propose the fabrication of Cr(I, $X)_3$ Janus monolayers, in which the Cr atoms are covalently bonded to the underlying I ions and top-layer Br or Cl atoms. By performing first-principles calculations and Monte Carlo simulations, we identify strong enough DMIs, which leads to not only helical cycloid phases, but also to topologically nontrivial states, such as the intrinsic domain wall skyrmions in Cr(I, Br) 3 and the magnetic-field-induced bimerons in Cr(I, Cl) 3 . Finally, microscopic origins of such spin textures are revealed as well.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Observation of a phase transition within the domain walls of ferromagnetic Co3Sn2S2

Abstract The ferromagnetic phase of Co 3 Sn 2 S 2 is widely considered to be a topological Weyl semimetal, with evidence for momentum-space monopoles of Berry curvature from transport and spectroscopic probes. As the bandstructure is highly sensitive to the magnetic order, attention has focused on anomalies in magnetization, susceptibility and transport measurements that are seen well below the Curie temperature, leading to speculation that a “hidden” phase coexists with ferromagnetism. Here we report spatially-resolved measurements by Kerr effect microscopy that identify this phase. We find that the anomalies coincide with a deep minimum in domain wall (DW) mobility, indicating a crossover between two regimes of DW propagation. We demonstrate that this crossover is a manifestation of a 2D phase transition that occurs within the DW, in which the magnetization texture changes from continuous rotation to unidirectional variation. We propose that the existence of this 2D transition deep within the ferromagnetic state of the bulk is a consequence of a giant quality factor for magnetocrystalline anisotropy unique to this compound. This work broadens the horizon of the conventional binary classification of DWs into Bloch and Néel walls, and suggests new strategies for manipulation of domain walls and their role in electron and spin transport.

36 MATERIALS SCIENCE↗

Concurrence of quantum anomalous Hall and topological Hall effects in magnetic topological insulator sandwich heterostructures

The quantum anomalous Hall (QAH) effect is a consequence of non-zero Berry curvature in momentum space. The QAH insulator harbours dissipation-free chiral edge states in the absence of an external magnetic field. Yet, the topological Hall (TH) effect, a hallmark of chiral spin textures, is a consequence of real-space Berry curvature. Herein, by inserting a topological insulator (TI) layer between two magnetic TI layers, we realized the concurrence of the TH effect and the QAH effect through electric-field gating. The TH effect is probed by bulk carriers, whereas the QAH effect is characterized by chiral edge states. The appearance of the TH effect in the QAH insulating regime is a consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii–Moriya interaction and occurs during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures provides a platform for proof-of-concept dis- sipationless spin-textured spintronic applications.

36 MATERIALS SCIENCE↗

Manipulation of the magnetic monopole injection for topological transition

Abstract Manipulating the topological properties of spin textures in magnetic materials is of great interest due to the rich physics and promising technological applications of these materials in advanced electronic devices. A spin texture with desired topological properties can be created by magnetic monopole injection, resulting in topological transitions involving changes in the topological charge. Therefore, controlling magnetic monopole injection has paramount importance for obtaining the desired spin textures but has not yet been reported. Here, we report the use of reliably manipulated magnetic monopole injection in the topological transition from stripe domains to skyrmions in an Fe/Gd multilayer. An easily tunable in-plane magnetic field applied to an Fe/Gd multilayer plays a key role in the magnetic monopole injection by modulating the local exchange energy. Our findings facilitate the efficient management of topological transitions by providing an important method for controlling magnetic monopole injection.

36 MATERIALS SCIENCE↗

Topological magneto-optical Kerr effect without spin-orbit coupling in spin-compensated antiferromagnet

The magneto-optical Kerr effect (MOKE), the differential reflection of oppositely circularly polarized light, has traditionally been associated with relativistic spin-orbit coupling (SOC), which links a particle’s spin with its orbital motion. In ferromagnets, large MOKE signals arise from the combination of magnetization and SOC, while in certain coplanar antiferromagnets, SOC-induced Berry curvature enables MOKE despite zero net magnetization. Theoretically, large MOKE can also arise in a broader class of magnetic materials with compensated spins, without relying on SOC - for example, in systems exhibiting real-space scalar spin chirality. The experimental verification has remained elusive. Here, we demonstrate such a SOC- and magnetization-free MOKE in the noncoplanar antiferromagnet Co 1/3 TaS 2 . Using a Sagnac interferometer microscope, we image domains of scalar spin chirality and their reversal. Our findings establish experimentally a new mechanism for generating large MOKE signals and position chiral spin textures in compensated magnets as a compelling platform for ultrafast, stray-field-immune opto-spintronic applications.

Magnetic properties and materials↗

Toroidal polar topology in strained ferroelectric polymer

Polar topological texture has become an emerging research field for exotic phenomena and potential applications in reconfigurable electronic devices. Here, we report toroidal topological texture self-organized in a ferroelectric polymer, poly(vinylidene fluoride-ran-trifluoroethylene) [P(VDF-TrFE)], that exhibits concentric topology with anticoupled chiral domains. The interplay among the elastic, electric, and gradient energies results in continuous rotation and toroidal assembly of the polarization perpendicular to polymer chains, whereas relaxor behavior is induced along polymer chains. Such toroidal polar topology gives rise to periodic absorption of polarized far-infrared (FIR) waves, enabling the manipulation of the terahertz wave on a mesoscopic scale. Our observations should inform design principles for flexible ferroic materials toward complex topologies and provide opportunities for multistimuli conversions in flexible electronics.

36 MATERIALS SCIENCE↗

Effect of Surface Oxidation and Crystal Thickness on the Magnetic Properties and Magnetic Domain Structures of Cr 2 Ge 2 Te 6

van der Waals (vdW) magnetic materials, such as Cr 2 Ge 2 Te 6 (CGT), show promise for memory and logic applications. This is due to their broadly tunable magnetic properties and the presence of topological magnetic features such as skyrmionic bubbles. A systematic study of thickness and oxidation effects on magnetic domain structures is important for designing devices and vdW heterostructures for practical applications. Here, we investigate thickness effects on magnetic properties, magnetic domains, and bubbles in oxidation-controlled CGT crystals. We find that CGT exposed to ambient conditions for 5 days forms an oxide layer approximately 5 nm thick. This oxidation leads to a significant increase in the oxidation state of the Cr ions, indicating a change in local magnetic properties. This is supported by real-space magnetic texture imaging through Lorentz transmission electron microscopy. By comparing the thickness-dependent saturation field of oxidized and pristine crystals, we find that oxidation leads to a nonmagnetic surface layer that is thicker than the oxide layer alone. We also find that the stripe domain width and skyrmionic bubble size are strongly affected by the crystal thickness in pristine crystals. Finally, these findings underscore the impact of thickness and surface oxidation on the properties of CGT, such as saturation field and domain/skyrmionic bubble size, and suggest a pathway for manipulating magnetic properties through a controlled oxidation process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dimensionality-Induced Change in Topological Order in Multiferroic Oxide Superlattices

We construct ferroelectric (LuFeO 3 ) m /(LuFe 2 O 4 ) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO 3 layers, the volume fraction of domain walls grows, lowering the symmetry from P6 3 cm to P3c1 before reaching the nonpolar P6 3 /mmc state, analogous to the group-subgroup sequence observed at the high-temperature ferroelectric to paraelectric transition. Our study shows how dimensional confinement stabilizes textures beyond those in bulk ferroelectric systems.

36 MATERIALS SCIENCE↗

Temperature effects in spin-dependent Hall currents in an ideal skyrmion gas

The quest of novel reliable and fast performing logic and memory elements in classical and quantum computing requires discoveries of new effects in novel quantum materials. Skyrmions are such magnetic textures where electron scattering can essentially change the shape and location of the skyrmion, which can be used as a memory element being more efficient than domain walls as memory device in classical computing. Because the skyrmion motion is sensitive even to very small currents, we study electron scattering by skyrmions in an ideal skyrmion gas in ferromagnetic environment. In such systems, the direct and Hall currents become spin-dependent. For applications it is important to consider a Hall effect in the whole range of temperatures under the assumption of the skyrmion existence. In this study we find the nonmonotonic temperature dependence of the direct spin-up conductivity, i. e., the conductivity for the current directed along the applied electric field due to the electrons with the spin parallel to the ferromagnetic moment. Such a behavior contradicts the traditional understanding where the temperature only increases the value of the conductivity. The spin-down Hall conductivity is found to be even more dramatic exhibiting the conductivity sign change (i.e., the change in the current direction) with temperature for small skyrmion sizes. The found effects strongly depend on Fermi energy. The most pronounced dependencies take place if the Fermi energy is slightly below and above the bottom of the upper (spin-down) energy band of an ideal 2D electron gas. In addition, we also find that the direct and Hall resistivities, ρ xx and ρ xy , are independent of the exchange integral J for 2J > ε F .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spatial Mapping of Riverbed Grain-Size Distribution Using Machine Learning

Recent alluvial sediments in riverbeds play a significant role in controlling hydrologic exchange flows (HEFs) in river systems. The alluvial layer is usually associated with strong heterogeneity in physical properties (e.g., permeability and hydraulic conductivity), which affects local HEFs and therefore biogeochemical processes. The spatial distribution of these physical properties needs to be determined to inform the numerical models used to reveal the realistic hydro-biogeochemical behaviors. Such information can be obtained based on the intrinsic link between sediment grain-size distribution and hydraulic properties where sediment texture information is available. However, grain-size measurements are usually spatially sparse and do not have adequate coverage and resolution, particularly for a relatively large domain such as the Hanford Reach of the Columbia River. In this paper, we adopted machine learning (ML) approaches for categorizing and mapping the spatial distributions of riverbed substrate grain size and filling in missing areas of substrate data using the ML models along the reach. Such ML models for substrate size mapping were trained at 13,372 locations using measured substrate sizes along with observed and simulated attributes, including bathymetric attributes (e.g., elevation, slope, and aspect ratio) from LIDAR and bathymetric surveys, and hydrodynamic properties (e.g., water depth, velocity, shear stress, and their statistical moments). An ensemble bagging-based ML technique, Random Forest, was adopted to identify the most influential factors as predictors to develop the predictive models with over-fitting issues addressed. The models were evaluated with respect to each individual substrate size class and the lumped group, and then used to generate the final substrate size maps covering all the grid cells in the numerical modeling domain.

54 ENVIRONMENTAL SCIENCES↗

Evolution of magnetic bubble domains in the uniaxial ferromaget CeRu 2 Ga 2 B inferred from the Hall effect and ac magnetic susceptibility

We study the Hall effect, AC magnetic susceptibility (χ ac ), and magnetic force microscopy of the uniaxial ferromagnet CeRu 2 Ga 2 B with a centrosymmetric crystal structure. We observe a finite topological Hall effect (THE) within the ordered phase, before the magnetization is polarized by applied field. By comparing the field dependences of the area fraction of the magnetic bubbles, the derivative of χ ac , and the THE signal, we deduce that the magnetic bubbles in CeRu 2 Ga 2 B evolve from the trivial to topological spin texture with field. Our findings enable the expansion of the search for magnetic materials hosting topological spin textures to include uniaxial ferromagnets and open a new possibility to tailor the topological spin texture.

AC magnetic susceptibility↗

Topological Hall-like behavior of multidomain ferromagnets

Here, we investigate the emergence of topological Hall-like signals in disordered multidomain ferromagnets. Nonmonotonic behavior in Hall resistivity, commonly attributed to topological spin textures such as skyrmions, is produced in a random resistor network model without any chirality. It arises from simple mechanisms of the anomalous Hall effect in combination with the domain wall scattering. By varying domain configurations and domain wall resistances, we explore the conditions under which the nonmonotonic resistivity can be enhanced. Our results emphasize the need for careful analysis in distinguishing between true topological Hall effects and artifacts caused by domain disorders.

anomalous Hall effect↗

Topological control of magnetic textures

Here, a micromagnetic study is carried out on the role of using topology to stabilize different magnetic textures, such as a vortex or an antivortex state, in a magnetic heterostructure consisting of a permalloy disk coupled to a set of nanomagnetic bars. The topological boundary condition is set by the stray field contributions of the nanomagnet bars and thus by their magnetization configuration, and can be described by a discretized winding number that will be matched by the winding number of the topological state set in the disk. The lowest number of nanomagnets that defines a suitable boundary is 4, and we identify a critical internanomagnet angle of 225 ° between two nanomagnets, at which the boundary fails because the winding number of the nanomagnet configuration no longer controls that of the disk magnetization. The boundary also fails when the disk-nanomagnets separation is >50 nm and for disk diameters >480 nm. Finally, we provide preliminary experimental evidence from magnetic force microscopy studies in which we demonstrate that an energetically unstable, antivortex-like structure can indeed be stabilized in a permalloy disk, provided that the appropriate topological conditions are set.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Superlattice reflection signatures of the insulator–metal transition in V 3 O 5 thin films

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V 3 O 5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO 2 and provides a unique high-temperature opportunity for these types of applications. Here, in this work, we track the structural evolution of V 3 O 5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below T IMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at T IMT , consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V 3 O 5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

25 ENERGY STORAGE↗

On the numerical sensitivity of cellular automata grain structure predictions to large thermal gradients and cooling rates

Cellular automata (CA) models of as-solidified grain structure, originally developed and applied to casting, have become a common means of predicting grain structure resulting from Additive Manufacturing (AM) processes. The majority of these models are based on the decentered octahedron approach, which attempts to correct for the effect of grid anisotropy on the prediction of competitive solidification of dendritic grains. However, AM solidification occurs under cooling rates ($\dot{T}$) and thermal gradients (G) that are orders of magnitude larger than those encountered in casting, and no systematic investigation on the effect of the CA model cell size (Δx) and time step (Δt) on AM microstructure predictions has been performed. Here, in this study, such an investigation is first performed via simulation of individual grains of various crystallographic orientations with a fixed, unidirectional G, showing that CA prediction of the steady-state undercooling matched the expected values based on the interfacial response function at small G and deviated from the expected values at large G. Simulation of competitive growth of multiple grains showed a weakening of the predicted texture as G and Δx became large. Simulation of solidification under AM conditions, where G and $\dot{T}$ vary spatially across the melt pools, showed that not only does grain selection weaken and deviate from expectations at large Δx, but grains with crystallographic $\langle$100$\rangle$ aligned with the grid directions are more adversely affected by the temperature field discontinuities than grains with other crystallographic orientations. Despite the fact that the exact grain competition results depended on Δt, the overall texture development was notably less sensitive to Δt than Δx, provided that a reasonable value of Δt is selected based on the ratio of Δx to the maximum local solidification velocity in the simulation domain. Finally, from the directional solidification and AM simulation results, an analysis of computational cost compared to simulation resolution is performed based on an equation derived to quantify the relatively inaccuracy in grain selection based on the model and temperature field inputs. From this analysis, it is concluded that there is a need for algorithmic improvements to improve CA grain competition accuracy for large G processing conditions as sufficiently small Δx to resolve the necessary competition is intractable for many AM processing conditions.

36 MATERIALS SCIENCE↗

Directed Self-Assembly of the Organic Semiconductor C8-BTBT-C8 in Anodic Aluminum Oxide Nanopores

Controlling the self-assembly of organic semiconductors at the nanoscale is critical for advancing high-performance electronic and photonic devices, yet it remains challenging due to their intrinsic anisotropic crystallization and sensitivity to processing conditions. Here, in this study, we demonstrate that cylindrical nanoconfinement within anodic aluminum oxide membranes provides a versatile platform to precisely tune the molecular orientation and phase behavior of the prototypical organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). Combining temperature-dependent high-resolution synchrotron X-ray scattering with optical birefringence measurements, we uncover that confinement geometries (pore diameters 25–180 nm) and surface chemistry govern the emergence of distinct smectic A textures, featuring molecular layers either parallel or perpendicular to the pore axis. The competition between axial and radial smectic layering is modulated by pore size, surface hydrophilicity, and thermal history, enabling reversible control over domain orientations and transitions between liquid crystalline and crystalline states. Notably, nanoconfinement stabilizes the smectic phase over an expanded temperature range compared to bulk, while inducing complex multidomain configurations owing to geometric constraints and anchoring conditions. Our results elucidate fundamental mechanisms by which anisotropic nanoscale confinement directs the self-organization of highly conjugated organic molecules, with implications for optimizing directional charge transport and anisotropic optical responses in organic–inorganic hybrid nanoarchitectures. This study establishes nanoconfinement as a powerful strategy to engineer morphology and functional properties in organic semiconducting materials with nanoscale precision.

36 MATERIALS SCIENCE↗