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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Diode step stress program for JANTX1N5615

The effect of power/temperature step stress when applied to the switching diode JANTX1N5615 manufactured by Semtech and Micro semiconductor was examined. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are presented.

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NASA NTRS1972

Radiation damage effects on solid state detectors

Totally depleted silicon diodes are discussed which are used as nuclear particle detectors in investigations of galactic and solar cosmic radiation and trapped radiation. A study of radiation and chemical effects on the diodes was conducted. Work on electron and proton irradiation of surface barrier detectors with thicknesses up to 1 mm was completed, and work on lithium-drifted silicon devices with thicknesses of several millimeters was begun.

Trainor, J. H.↗
NASA NTRS1979

Diode step stress program for JANTX1N5622

The effect was studied of power/temperature step stress when applied to the diode JANTX1N5622 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are included.

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NASA NTRS1979

Diode step stress program for JANTX1N5619

The effect of power/temperature step stress was studied when applied to the Diode JANTX1N5619 manufactured by Semtech and Micro-Semiconductor. Test results, and failure analyses are presented.

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NASA NTRS1979

Diode step stress program for JANTX1N746A

The effect was studied of power/temperature step stress when applied to the diode JANTX1N746A manufactured by Siemens and Motorola. Test results and failure analyses are included.

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NASA NTRS1979

Diode step stress program for JANTX1N5417

The effect of power/temperature step stress was studied when applied to the diode JANTX1N5417 manufactured by Micro Semiconductor and Semtech. Test results and failure analyses are included.

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NASA NTRS1984

The integration of bypass diodes with terrestrial photovoltaic modules and arrays

Bypass diodes are often required to limit the potential for reverse voltage 'hot-spot' heating in high voltage arrays or in arrays that undergo periodic operation near the short-circuit point. In addition, when properly applied, bypass diodes can minimize the effect of shadowing and various internal module failures on the array energy output. This paper discusses the mechanical and electrical integration of bypass diodes beginning with the array-level considerations which influence the selection of an implementation approach. Concepts for the mounting of these diodes, both internally within the module encapsulant and externally to the exposed rear surface of the module, are described. Factors affecting the reliability of bypass diodes, including the control of junction temperature through adequate heat sinking and the derating of reverse voltage, are discussed.

Shepard, N. F., Jr.↗
NASA NTRS1998

Numerical Examination of Silicon Avalanche Photodiodes Operated in Charge Storage Mode

The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

Parks, Joseph W., Jr.↗
NASA NTRS1979

Diode step stress program for JANTX1N5623

The effect of power/temperature step stress was studied when applied to the switching diode JANTX1N5623 manufactured by Semtech and Micro Semiconductor. Test results and failure analyses are included.

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NASA NTRS2015

Schottky Diode Derating for Survivability in a Heavy Ion Environment

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.

Radiation effects↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 1

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

Price, W. E.↗
NASA NTRS1979

Diode step stress testing program for JANTX1N2989B

The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N3031B

The effect of power/temperature step stress when applied to the zener diode JANTX1N3031B manufactured by Siemens and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS1979

Diode step stress testing program for JANTX1N5618

The effect of power/temperature step stress when applied to the switching diode JANTX1N5618 manufactured by Semtech and Micro Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.

Source record↗
NASA NTRS2017

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.

Radiation effects↗
NASA NTRS1982

Total-dose radiation effects data for semiconductor devices, volume 3

Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

Price, W. E.↗
NASA NTRS1985

Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.

Martin, K. E.↗
NASA NTRS1986

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

Martin, K. E.↗