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At least 91 records · Page 5

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗

Introduction to Grid Forming Inverters: A Key to Transforming our Power Grid [Slides]

A grid-forming (GFM) inverter-based resource (IBR) controls maintain an internal voltage phasor that is constant or nearly constant in the sub-transient to transient time frame. This definition means that the GFM IBR will nearly immediately respond to changes in the external system and attempt to maintain IBR control during challenging network conditions to maintain grid stability. In GFM IBR, the voltage phasor is controlled to maintain synchronism with other devices in the grid while regulating the active and reactive power appropriately to support the grid. This contrasts with conventional GFL IBR controls wherein immediately after a disturbance (0-5 cycles), within the normal operating range of voltage, the output current phasor magnitude and angle remain unchanged, and the current phasor begins changing only within the transient time frame (tens of cycles) to strictly control the active and reactive power being injected into the network. This presentation gives an introduction to GFM IBR and presents the current state of the art in this area.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Power-Domain Impedance Theory for the Analysis and Mitigation of Interarea Oscillations: Preprint

This paper presents an impedance-based theory for the analysis and mitigation of interarea oscillations in power systems. Because low-frequency power system oscillations primarily manifest in phasor quantities, including active and reactive power flows, and the magnitude and frequency of bus voltages, a new-type of impedance, called power-domain impedance, is defined in terms of these phasor quantities. The power-domain impedance provides an intuitive framework for the analysis of interarea oscillations without requiring internal details of generators, and it is ideally suited for developing oscillation damping controls in inverter-based resources. The power-domain impedance theory is demonstrated in this paper using PSCAD simulations of a two-area system. The theory is also used for designing damping control in synchronous generators and a wind power plant in the two-area system.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS

Science & Technology - Other Topics↗

Magnon confinement in epitaxial antiferromagnetic oxide heterostructures.

Magnons, the quanta of spin waves, have been extensively studied in a range of materials for spintronics, particularly for non-volatile logic-in-memory devices. Controlling magnons in conventional antiferromagnets and harnessing them in practical applications, however, remains a challenge. Here, we demonstrate highly efficient magnon transport in a LaFeO3/ BiFeO3/ LaFeO3 all-antiferromagnetic system, which can be controlled electrically, making it highly desirable for energy-efficient computation. Leveraging spin-orbit-driven spin-charge transduction, we demonstrate that this material architecture permits magnon confinement in ultrathin antiferromagnets, enhancing the output voltage generated by magnon transport by several orders of magnitude, which provides a pathway to enable magnetoelectric memory and logic functionalities. Additionally, the non-volatility of output voltage enables ultralowpower logic-in-memory processing, where magnonic devices can be efficiently reconfigured via electrically controlled magnon spin currents within magnetoelectric channels.

Husain, Sajid↗

Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La 1– x Sr x CoO 3–δ Films

Much recent attention has focused on the voltage-driven reversible topotactic transformation between the ferromagnetic metallic perovskite (P) SrCoO 3-δ and oxygen-vacancy-ordered antiferromagnetic insulating brownmillerite (BM) SrCoO 2.5 . This is emerging as a paradigmatic example of the power of electrochemical gating (using, e.g., ionic liquids/gels), the wide modulation of electronic, magnetic, and optical properties generating clear application potential. SrCoO 3 films are challenging with respect to stability, however, and there has been little exploration of alternate compositions. Here, we present the first study of ion-gel-gating-induced P. BM transformations across almost the entire La 1-x SrxCoO 3 phase diagram (0 ≤ x ≤ 0.70), under both tensile and compressive epitaxial strain. Electronic transport, magnetometry, and operando synchrotron X-ray diffraction establish that voltage-induced P → BM transformations are possible at essentially all x, including x ≤ 0.50, where both P and BM phases are highly stable. Under small compressive strain, the transformation threshold voltage decreases from approximately +2.7 V at x = 0 to negligible at x = 0.70. Both larger compressive strain and tensile strain induce further threshold voltage lowering, particularly at low x. The P → BM threshold voltage is thus tunable, via both composition and strain. At x = 0.50, voltage-controlled ferromagnetism, transport, and optical transmittance are then demonstrated, achieving Curie temperature and resistivity modulations of similar to 220 K and at least 5 orders of magnitude, respectively, and enabling estimation of the voltage-dependent Co valence. The results are analyzed in the context of doping- and strain-dependent oxygen vacancy formation energies and diffusion coefficients, establishing that it is thermodynamic factors, not kinetics, that underpin the decrease in the threshold voltage with x, that is, with increasing formal Co valence. These findings substantially advance the practical and mechanistic understanding of this voltage-driven transformation, with fundamental and technological implications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗

Tunable tunnel barriers in a semiconductor via ionization of individual atoms

individual adatoms deposited on an InSb(110) surface. The adatoms can be reproducibly dropped off from the STM tip by voltage pulses, and impact tunneling into the surface by up to ~100×. The spatial extent and magnitude of the tunneling effect are widely tunable by imaging conditions such as bias voltage, set current and photoillumination. We attribute the effect to occupation of a (+/0) charge transition level, and switching of the associated adatom-induced band bending. The effect in STM topographic images is well reproduced by transport modeling of filling and emptying rates as a function of the tip position. STM atomic contrast and tunneling spectra are in good agreement with density functional theory calculations for In adatoms. The adatom ionization effect can extend to distances greater than 50 nm away, which we attribute to the low concentration and low binding energy of the residual donors in the undoped InSb crystal. These studies demonstrate how individual atoms can be used to sensitively control current flow in nanoscale devices.

Physics↗

High-Current Density Durability of Pt/C and PtCo/C Catalysts at Similar Particle Sizes in PEMFCs

The durability of carbon supported PtCo-alloy based nanoparticle catalysts play a key role in the longevity of proton-exchange membrane fuel cells (PEMFC) in electric vehicle applications. To improve its durability, it is important to understand and mitigate the various factors that cause PtCo-based cathode catalyst layers (CCL) to lose performance over time. These factors include i) electrochemical surface area (ECSA) loss, ii) specific activity loss, iii) H + /O 2 -transport changes and iv) Co 2+ contamination effects. We use a catalyst-specific accelerated stress test (AST) voltage cycling protocol to compare the durability of Pt and PtCo catalysts at similar average nanoparticle size and distribution. Our studies indicate that while Pt and PtCo nanoparticle catalysts suffer from similar magnitudes of electrochemical surface area (ECSA) losses, PtCo catalyst shows a significantly larger cell voltage loss at high current densities upon durability testing. The distinctive factor causing the large cell voltage loss of PtCo catalyst appears to be the secondary effects of the leached Co 2+ cations that contaminate the electrode ionomer. A 1D performance model has been used to quantify the cell voltage losses arising from various factors causing degradation of the membrane electrode assembly (MEA).

08 HYDROGEN↗

Effects of the Hydrophobic Block Length Ratio of Poly(vinylbenzyl N -methylpiperidinium carbonate)- b -polyethylene- b -poly(vinylbenzyl N -methylpiperidinium carbonate) Block Copolymers for Anion Exchange Membrane Electrolysis

Electrolysis of water to produce hydrogen from renewable electricity is an extremely attractive strategy to reduce energy dependence on fossil fuels. Development of membrane and ionomer materials that maintain high performance with long lifetimes is needed. We developed and investigated the performance and durability of a series of polyethylene-based ABA triblock copolymer anion exchange ionomer and membrane (AEI, AEM) materials for anion exchange membrane water electrolysis. Poly(vinylbenzyl N-methylpiperidinium carbonate)-b-polyethylene-b-poly(vinylbenzyl N-methylpiperidinium carbonate) was synthesized with different hydrophobic/hydrophilic block ratios (1.02:1, 2.58:1, and 4.46:1) resulting in a range of ion exchange capacities (1.1–1.8 meq g –1 ) and water swelling (23–154%) characteristics. All AEMs showed full anionic dissociation, as evidenced by linear Arrhenius correlations, and excellent carbonate conductivity of 8–94 mS cm –1 at 50 °C. Hydrophilic phase separation may offer superior chemical durability by only wetting the ion-conducting region of the polymer and avoiding attack at the nonwetted backbone. We evaluated the performance and durability of these AEMs as a function of hydrophobic polyethylene (PE) content. The AEM containing the least amount of PE displayed the highest performance of 1 A cm –2 at 2.3 V but degraded at 40 mV h –1 before catastrophically failing after <3 h at 0.5 A cm –2 . With greater PE-containing AEMs, the degradation rate was reduced by 3 orders of magnitude with only a 0.2 V increase in voltage. Constant current electrolysis for 50 h resulted in a voltage change of 0.3 mV h –1 in a single-cell water electrolyzer and 1 M potassium carbonate. In a 600 h test, the voltage change in the final 200 h was impressively low for an experimental film, 58 μV h –1 . Postmortem analysis indicated that the membrane did not thin and that water becomes more tightly hydrogen-bound in the polymer after electrolysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Nighttime electric power generation at a density of 50 mW/m 2 via radiative cooling of a photovoltaic cell

A large fraction of the world's population lacks access to the electric grid. Standard photovoltaic (PV) cells can provide a renewable off-grid source of electricity but only produce power from daytime solar irradiance and do not produce power at night. While there have been several theoretical proposals and experimental demonstrations of energy harvesting from the radiative cooling of a PV cell at night, the achieved power density is very low. Here, we construct a device, which incorporates a thermoelectric generator that harvests electricity from the temperature difference between the PV cell and the ambient surrounding. We achieve 50 mW/m 2 nighttime power generation with a clear night sky, with an open-circuit voltage of 100 mV, which is orders of magnitude higher as compared with previous demonstrations. During the daytime, the thermoelectric generator also provides additional power on top of the electric power generated directly from the PV cells. Our system can be used as a continuous renewable power source for both day- and nighttime in off-grid locations.

14 SOLAR ENERGY↗

A New Configuration of Paralleled Modular ANPC Multilevel Converter Controlled by an Improved Modulation Method for 1 MHz, 1 MW EV Charger

In this work, a new configuration of the modular multilevel converter (MLC) based on the parallel connection of three-level active-neutral-point-clamped (3L-ANPC) cells as well as its improved modulation method is proposed for 1 MHz, 1 MW electric vehicle (EV) megacharger. In the proposed paralleled modular ANPC-MLC, only six high-frequency silicon carbide (SiC) power switches operating at 333 kHz are required to generate 1 MHz switching frequency spectrum. Moreover, the operating voltage of all power devices is halved, the magnitude of the first switching frequency harmonic cluster is decreased by the factor of five, and the load current is equally distributed between the 3L-ANPC legs by employing the proposed improved modulation method. Hence, the modularity, efficiency, and power density of the proposed converter are notably increased, whereas the value of passive components and the overall switching loss are remarkably decreased. In addition, an optimized design of the one 3L-ANPC cell of the proposed paralleled modular ANPC-MLC for 1 MHz, 1MW EV megacharger using Ansys SIwave, Icepak, and Q3D finite element method platforms is presented and analyzed in detail. The provided experimental results of the down-scaled setup verify the feasibility and viability of the proposed configuration as well as its improved switching pattern.

42 ENGINEERING↗

Long-lasting strong electrostatic attraction and adhesion forces of dust particles on photovoltaic modules

Photovoltaic (PV) energy-yield loss due to solar module soiling has become increasingly important as solar module deployment is now at the hundreds of gigawatts scale and continues to grow rapidly. The electrostatic attraction and adhesion force (F es ) of dust particles by the high voltages from solar panels have been reported to be 1 to 2 orders of magnitude stronger than the van der Waals and water capillary forces, which has been corroborated by observing the increase in system voltage-induced soiling rate by setting up an outdoor test. Here, we report another characteristic of F es on soiling - long-lasting or slow decay after turning off the high voltage applied to solar panels. The F es decay time varies across a wide time range of 1 to 10 h, depending on two factors: 1) whether the cell, the particle, or both were charged with high voltage before the voltages were turned off; and 2) how the cell was connected to the ground after the voltage was turned off - either connected through the power-supply electronics, directly connected to the ground, or electrically floated. The Fes decay is understood in terms of 1) net electrical charge dissipations in both particle and cell, 2) thermal disordering of dipole polarization in the module glass dielectrics, and 3) charge redistribution by the electrostatic interaction of particle and module glass. This long-lasting F es for hours can affect the solar panel soiling after sunset, and it can have an even greater effect when combined with water condensation at night.

14 SOLAR ENERGY↗

Voltage-Dependent First-Principles Simulation of Insertion of Chloride Ions into Al/Al 2 O 3 Interfaces Using the Quantum Continuum Approximation

Experiments have shown that pitting corrosion can develop in aluminum surfaces at potentials > − 0.5 V relative to the standard hydrogen electrode (SHE). Until recently, the onset of pitting corrosion in aluminum has not been rigorously explored at an atomistic scale because of the difficulty of incorporating a voltage into density functional theory (DFT) calculations. We introduce the Quantum Continuum Approximation (QCA) which self-consistently couples explicit DFT calculations of the metal-insulator and insulator-solution interfaces to continuum Poisson-Boltzmann electrostatic distributions describing the bulk of the insulating region. By decreasing the number of atoms necessary to explicitly simulate with DFT by an order of magnitude, QCA makes the first-principles prediction of the voltage of realistic electrochemical interfaces feasible. After developing this technique, we apply QCA to predict the formation energy of chloride atoms inserting into oxygen vacancies in Al(111)/α-Al 2 O 3 (0001) interfaces as a function of applied voltage. We predict that chloride insertion is only favorable in systems with a grain boundary in the Al 2 O 3 for voltages > − 0.2 V (SHE). Here our results roughly agree with the experimentally demonstrated onset of corrosion, demonstrating QCA's utility in modeling realistic electrochemical systems at reasonable computational cost.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Detection of a multi–disease biomarker in saliva with graphene field effect transistors

Human carbonic anhydrase 1 (CA1) has been suggested as a biomarker for identification of several diseases including cancers, pancreatitis, diabetes, and Sjogren’s syndrome. However, the lack of a rapid, cheap, accurate, and easy-to-use quantification technique has prevented widespread utilization of CA1 for practical clinical applications. To this end, we present a label-free electronic biosensor for detection of CA1 utilizing highly sensitive graphene field effect transistors (G-FETs) as a transducer and specific RNA aptamers as a probe. The binding of CA1 with aptamers resulted in a positive shift in Dirac voltage V D of the G-FETs, the magnitude of which depended on target concentration. These aptameric G-FET biosensors showed the binding affinity (K D ) of ~2.3 ng/ml (70 pM), which is four orders lower than that reported using a gel shift assay. This lower value of K D enabled us to achieve a detection range (10 pg/ml - 100 ng/ml) which is well in line with the clinically relevant range. These highly sensitive devices allowed us to further prove their clinical relevance by successfully detecting the presence of CA1 in human saliva samples. In conclusion, the utilization of this label-free biosensor could facilitate the early stage identification of various diseases associated with changes in concentration of CAs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Dynamics of the water-plasma interface in various discharge modes of atmospheric-pressure plasmas

This paper presents an experimental study of the dynamics of the water-plasma interface during the interaction high-voltage (HV) atmospheric pressure discharge with the water surface. Under the influence of the voltage applied to the pin type electrode, discharges are formed at the air layer between the sharp-tip HV electrode and deionized water. Three discharge regimes were identified from synchronized electrical waveforms and imaging: (i) a weak linear regime at 3–10.6 kV, (ii) a branching streamer regime at the maximum applied voltage of 12.6 kV, and (iii) a continuous arc-like regime occurring during the transition to lower voltage and higher current (e.g., U ≈ 3.2 kV, I ≈ 4.07 mA). High-speed shadowgraph images showed a symmetric interfacial cavity whose depth increased nonlinearly with voltage from h 0 ≈ 0.1 mm at 3 kV to h 0 ≈ 2.7 mm at 10.6 kV, reaching a maximum depth of h 0 ≈ 5.9 mm at 12.6 kV, while the cavity disappeared in the continuous-channel regime and was replaced by outward-propagating wave-like motion. The deformation of the water surface during the discharge-water interaction is governed by the balance between electric field forces, surface tension, gravitational forces, and electrohydrodynamic forces, whose relative contributions vary with the applied voltage. This effect was explained by quantitatively estimating the magnitudes of the acting forces and establishing the force balance. Optical emission spectroscopy in the continuous-channel regime indicated air plasma signatures and yielded a gas temperature of approximately 400 K, while prolonged operation (≈ 20 min) increased the water temperature to ~ 70 °C, reduced the water-layer thickness from 6 mm to 3 mm, and decreased pH from 7 to 4. These regime-resolved, quantitative results clarify how the dominant interfacial forcing shifts with discharge mode and provide a mechanistic basis for controlling plasma-water interactions in atmospheric-pressure applications.

atmospheric pressure plasma↗